TSM220NB06CR RLG

5 SEMICONDUCTOR[ypu **TSM220NB06CR** Taiwan Semiconductor 

## **N-Channel Power MOSFET** 

60V, 35A, 22mΩ 

## FEATURES 

- Low RDS(ON) to minimize conductive losses 

- Low gate charge for fast power switching 

- 100% UIS and Rg tested. 

- 175°C Operating Junction Temperature 

- Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC 

|KEY PERFORMANCE PARAMETERS|KEY PERFORMANCE PARAMETERS|KEY PERFORMANCE PARAMETERS|KEY PERFORMANCE PARAMETERS|
|---|---|---|---|
|PARAMETER||VALUE|UNIT|
|VDS||60|V|
|RDS(on) (max)|VGS= 10V|22|mΩ|
|Qg||23|nC|



- Halogen-free according to IEC 61249-2-21 

## APPLICATIONS 

- BLDC Motor Control 

- Battery Power Management 

- DC-DC converter 

- Secondary Synchronous Rectification 

**PDFN56** 

**Note:** MSL 1 (Moisture Sensitivity Level) per J-STD-020 

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) ~~Cn GOO~~ PARAMETER SYMBOL LIMIT UNIT ~~eG~~ Drain-Source Voltage VDS 60 V ~~Gf~~ Gate-Source Voltage VGS ±20 V TC = 25°C 35 Continuous Drain Current **[(Note 1)]** ID A TA = 25°C 8 ~~ee | | a~~ Pulsed Drain Current ~~(~~ IDM 140 A Single Pulse Avalanche Current **[(Note 2)]** IAS 15 A ~~Ge~~ Single Pulse Avalanche Energy **[(Note 2)]** EAS 33.8 mJ TC = 25°C 68 Total Power Dissipation PD W ~~=~~ TC = 125°C 23 ~~| |[isd]~~ TA = 25°C 3.1 Total Power Dissipation PD W ~~oe~~ TA = 125°C 1 ~~| | eG~~ Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +175 °C 

|THERMAL PERFORMANCE|THERMAL PERFORMANCE|THERMAL PERFORMANCE|THERMAL PERFORMANCE|
|---|---|---|---|
|PARAMETER|SYMBOL|LIMIT|UNIT|
|Junction to Case Thermal Resistance|RӨJC|2.2|°C/W|
|Junction to Ambient Thermal Resistance|RӨJA|48|°C/W|



**Thermal Performance Note:** RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. The RӨJA limit presented here is based on mounting on a 1 in[2] pad of 2 oz copper. 

1 Version: B1804 

(i **TSM220NB06CR** Taiwan Semiconductor 

% SEMICONDUCTOR(i 

|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)<br>~~a~~<br>~~oo~~|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)<br>~~a~~<br>~~oo~~|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)<br>~~a~~<br>~~oo~~|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)<br>~~a~~<br>~~oo~~|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)<br>~~a~~<br>~~oo~~|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)<br>~~a~~<br>~~oo~~|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)<br>~~a~~<br>~~oo~~|
|---|---|---|---|---|---|---|
|PARAMETER<br>~~oo~~|CONDITIONS|SYMBOL|MIN|TYP|MAX|UNIT|
|**Static **<br>~~oo~~<br>~~es~~|||||||
|Drain-Source Breakdown Voltage<br>~~es~~<br>~~Ge~~|VGS= 0V, ID= 250µA<br>~~es~~<br>~~Ge~~|BVDSS<br>~~es~~<br>~~Ge~~|60<br>~~es~~<br>~~Ge~~|--<br>~~es~~<br>~~Ge~~|--<br>~~es~~<br>~~Ge~~|V<br>~~es~~<br>~~Ge~~|
|Gate Threshold Voltage<br>~~Ge~~|VGS= VDS, ID= 250µA<br>~~Ge~~|VGS(TH)<br>~~Ge~~|2<br>~~Ge~~|3.3<br>~~Ge~~|4<br>~~Ge~~|V<br>~~Ge~~|
|Gate-Source Leakage Current<br>~~Ge~~|VGS= ±20V, VDS= 0V<br>~~Ge~~|IGSS<br>~~Ge~~|--<br>~~Ge~~|--<br>~~Ge~~|±100<br>~~Ge~~|nA<br>~~Ge~~|
|Drain-Source Leakage Current|VGS= 0V, VDS= 60V|IDSS|--|--|1|µA|
||VGS= 0V, VDS= 60V<br>TJ= 125°C||--|--|100||
|Drain-Source On-State Resistance<br>**(Note 3)**<br>~~oo~~|VGS= 10V, ID= 8A|RDS(on)|--|19|22|mΩ|
|Forward Transconductance**(Note 3)**<br>~~oo~~|VDS= 10V, ID= 8A|gfs|--|35|--|S|
|**Dynamic (Note 4)**<br>~~oo~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|||||||
|Total Gate Charge<br>~~ee~~<br>~~ee~~<br>~~eo~~|VGS= 10V, VDS= 30V,<br>ID= 8A<br>~~ee~~|Qg<br>~~ee~~<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~|23<br>~~ee~~<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~<br>~~ee~~|nC<br>~~ee~~|
|Gate-Source Charge<br>~~ee~~<br>~~eo~~<br>~~ee~~<br>~~ee~~||Qgs<br>~~ee~~<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|6.5<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|Gate-Drain Charge<br>~~eo~~<br>~~ee~~<br>~~ee~~<br>~~eo~~||Qgd<br>~~ee~~<br>~~ee~~<br>~~ee ee~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|5.4<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|Input Capacitance<br>~~ee~~<br>~~ee~~<br>~~eo~~<br>~~ee~~|VGS= 0V, VDS= 30V<br>f = 1.0MHz|Ciss<br>~~ee~~<br>~~ee ee~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|1454<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|pF|
|Output Capacitance<br>~~ee~~<br>~~eo~~<br>~~ee~~||Coss<br>~~ee ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|90<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|Reverse Transfer Capacitance<br>~~eo~~<br>~~ee~~||Crss<br>~~ee ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|24<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|Gate Resistance<br>~~ee~~<br>~~Ce~~|f = 1.0MHz<br>~~Ce~~|Rg<br>~~Ce~~|0.6<br>~~ee~~<br>~~ee ~~<br>~~Ce~~|2<br>~~ee~~<br> ~~ee~~<br>~~Ce~~|4<br>~~ee~~<br>~~ee~~<br>~~Ce~~|Ω<br>~~Ce~~|
|**Switching (Note 4)**<br>~~eee~~|||||||
|Turn-On Delay Time<br>~~a~~<br>~~eee~~|VGS= 10V, VDS= 30V,<br>ID= 8A, RG= 2Ω<br>~~a~~<br>~~eee~~<br>~~eee~~<br>~~eee~~|td(on)<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~|3<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~|ns|
|Turn-On Rise Time<br>~~eee~~<br>~~eee~~||= 30V,<br>tr<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~|19<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~||
|Turn-Off Delay Time<br>~~eee~~<br>~~eee~~<br>~~eee~~||td(off)<br>~~ee~~<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~|10<br>~~ee~~<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|Turn-Off Fall Time<br>~~eee~~<br>~~eee~~||tf<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~|18<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~||
|**Source-Drain Diode **<br>~~eee~~<br>~~ee~~<br>~~eee~~|||||||
|Forward Voltage**(Note 3)**<br>~~GG~~<br>~~SS~~|VGS = 0V,IS = 8A<br>~~GG~~|VSD<br>~~GG~~<br>~~ee~~|--<br>~~GG~~<br>~~ee~~|--<br>~~GG~~<br>~~ee~~|1.2<br>~~GG~~<br>~~ee~~|V<br>~~GG~~<br>~~ee~~|
|Reverse Recovery Time<br>~~SS~~<br>~~eo~~|IS= 8A,<br>dI/dt = 100A/μs|trr<br>~~ee~~<br>~~po~~|--<br>~~ee~~<br>~~po~~|16<br>~~ee~~<br>~~po~~|--<br>~~ee~~<br>~~po~~|ns<br>~~ee~~<br>~~po~~|
|Reverse Recovery Charge<br>~~SS~~<br>~~eo~~||Qrr<br>~~ee~~<br>~~po~~|--<br>~~ee~~<br>~~po~~|11<br>~~ee~~<br>~~po~~|--<br>~~ee~~<br>~~po~~|nC<br>~~ee~~<br>~~po~~|



1. Silicon limited current only. 

2. L = 0.3mH, VGS = 10V, VDD = 30V, RG = 25Ω, IAS = 15A, Starting TJ = 25°C 

3. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%. 

4. Switching time is essentially independent of operating temperature. 

## ORDERING INFORMATION 

|PART NO.|PACKAGE|PACKING|
|---|---|---|
|TSM220NB06CR RLG|PDFN56|2,500pcs / 13” Reel|



2 Version: B1804 

$ _e—$§$£@$§£@—_—_——— **TSM220NB06CR** Taiwan Semiconductor 

## CHARACTERISTICS CURVES 

(TA = 25°C unless otherwise noted) 

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        Output Characteristics         Transfer Characteristics<br>40 40<br>VGS=10V<br>35 Wz VGS=8V  ee 35 ese/a<br>VGS=7V<br>30 VGS=6V  30<br>VGS=5.5V<br>25 qaiy/ an ee= 25 e/a|<br>20 Ae ee 20<br>VGS=5V  25 ℃<br>15 5 ae e e ee 15 ee<br>10 5 10<br>175 ℃<br>5 5 -55 ℃<br>2<br>0 a ee 0 a),<br>0 1 2 3 4 5 0 1 2 3 4 5 6<br>VDS, Drain to Source Voltage (V)  VGS, Gate to Source Voltage (V)<br>            On-Resistance vs. Drain Current          Gate-Source Voltage  vs. Gate Charge<br>0.05 10<br>0.04 P|P|ff 8 VIDDS=8A =30V IDDS=8A =30V DDS=8A =30V DS=8A =30V =8A =30V<br>0.03 | ft 6<br>0.02 || | 4<br>VGS=10V<br>Tf<br>0.01 2<br>P|<br>0 | ft 0<br>0 10 20 30 40 0 5 10 15 20<br>ID, Drain Current (A)  Qg, Gate Charge (nC) g, Gate Charge (nC) , Gate Charge (nC)<br>, Drain Current (A) ID , Drain Current (A) ID<br>Ω)<br>, Gate to Source Voltage (V)<br>, Drain-Source On-Resistance (<br>GS<br>V<br> DS(on)<br>R<br>**----- End of picture text -----**<br>


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10<br>=30V<br>8 VIDDS=8A =30V IDDS=8A =30V DDS=8A =30V DS=8A =30V =8A =30V<br>6<br>4<br>2<br>0<br>0 5 10 15 20 25<br>Qg, Gate Charge (nC) g, Gate Charge (nC) , Gate Charge (nC)<br>, Gate to Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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On-Resistance vs. Junction Temperature     On-Resistance vs. Gate-Source Voltage<br>2.5 0.08<br>VGS=10V  7 0.07 Tl ht<br>2 ID=8A<br>0.06<br>niece 0.05 TT<br>1.5<br>0.04<br>1 TEL Al ae<br>0.03<br>ID=8A<br>Ba LAL LL 4<br>0.02<br>Pe CEF}<br>0.5<br>0.01<br>0 TELL ELE 0 e ae<br>-75 -50 -25 0 25 50 75 100 125 150 175 4 5 6 7 8 9 10<br>TJ, Junction Temperature (°C)  VGS, Gate to Source Voltage (V)<br>(Normalized)<br>, Drain-Source On-Resistance DS(on) , Drain-Source On-Resistance (Ω)<br>R<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


3 Version: B1804 

**TSM220NB06CR** lie Taiwan Semiconductor 

SEMICONDUCTORlie 

## CHARACTERISTICS CURVES 

(TA = 25°C unless otherwise noted) 

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        BVDSS vs. Junction Temperature<br>1.2<br>ID=5mA D=5mA =5mA  py<br>1.1 ea<br>1 LTaa<br>0.9 va<br>0.8<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ, Junction Temperature (°C)  J, Junction Temperature (°C)  , Junction Temperature (°C)<br> (Normalized)<br>DSS<br>BV<br>Drain-Source Breakdown Voltage<br>**----- End of picture text -----**<br>


## **Capacitance vs. Drain-Source Voltage** 

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2000 1.2<br>1800<br>ee ID=5mA D=5mA =5mA  py<br>1600<br>ee CISS  ee 1.1 ea<br>1400<br>1200<br>1000 SOLre ee ee ee ee 1 LTaa<br>800<br>600<br>a CRSS  0.9 va<br>400 poi, | | | |<br>200 ee COSS<br>0 a 0.8<br>0 10 20 30 40 50 60 -75 -50 -25 0 25 50 75 100 125 150 175<br>VDS, Drain to Source Voltage (V)   TJ, Junction Temperature (°C)  J, Junction Temperature (°C)  , Junction Temperature (°C)<br>  Maximum Safe Operating Area, Junction-to-Case  Source-Drain Diode Forward Current vs. Voltage<br>1000 100<br>KA ee ee ee ee A 2<br>175 ℃<br>100 10<br>R<br>DS(ON)<br>n n censnll ff<br>pt aN MSHI es ey ee 25 ee ℃ 2 es -55 ee ℃<br>10 1<br>rl ee tft<br>SINGLE PULSE<br>RӨJC=2.2 ° C/W<br>TC=25 ° C<br>1 cSa NS ll 0.1 eyre| ee eefdee | ft eeee<br>0.1 1 10 100 0.2 0.4 0.6 0.8 1 1.2<br>VDS, Drain to Source Voltage (V)   VSD, Body Diode Forward Voltage (V)<br>Normalized Thermal Transient Impedance, Junction-to-Case<br>10<br>SINGLE PULSE<br>a ee ee ee ee eee RӨJC=2.2C/W ||<br>1 ee ee<br>Tee<br>— ee ee ee Duty=0.5  |_| |<br>Duty=0.2<br>0.1 Duty=0.1<br>Duty=0.05<br>Duty=0.02  Notes:<br>Duty=0.01  Duty = t1 / t2<br>re ee eee Single  na TJ = TC + PDM x ZӨJC x RӨJC |<br>0.01 Ft TE ETE il i<br>0.0001 0.001 0.01 0.1<br>t, Square Wave Pulse Duration (sec)<br> (Normalized)<br>DSS<br>C, Capacitance (pF)   BV<br>Drain-Source Breakdown Voltage<br>, Drain Current (A)<br>ID<br>, Reverse Drain Current (A)<br>IS<br>ӨJC<br>Thermal Impedance, Z<br>Normalized Effective Transient<br>**----- End of picture text -----**<br>


## **Source-Drain Diode Forward Current vs. Voltage** 

4 Version: B1804 

**TSM220NB06CR** [ypu Taiwan Semiconductor 

SEMICONDUCTOR[ypu 

## PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) 

**PDFN56** 

## SUGGESTED PAD LAYOUT (Unit: Millimeters) 

## MARKING DIAGRAM 

TSC TSC 220NB06 GYWWF 220NB06 GYWWF **G** = Halogen Free **Y** eo oO = Year Code OU oO ps **WW** = Week Code (01~52) **F** = Factory Code 

5 Version: B1804 

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## **Notice** 

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. 

Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. 

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 

6 Version: B1804