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TSM220NB06CR RLG

Power MOSFET, N Channel, 60 V, 35 A, 0.019 ohm, PDFN56, Surface Mount

  • Manufacturer: TAIWAN SEMICONDUCTOR
  • Product type: Single MOSFETs
  • Product variants: No other variants available. No other names.
  • No. of Pins: 8Pins
  • Channel Type: N Channel
  • Power Dissipation: 68W
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: N Channel
  • Power Dissipation Pd: 68W
  • Rds(on) Test Voltage: 10V
  • On Resistance Rds(on): 0.019ohm
  • Transistor Case Style: PDFN56
  • Drain Source Voltage Vds: 60V
  • Operating Temperature Max: 175°C
  • Continuous Drain Current Id: 35A
  • Drain Source On State Resistance: 0.019ohm
  • Gate Source Threshold Voltage Max: 3.3V
Delivery and price
Units per pack 500
Price 0.979 €
Current stock 1940
Lead time 7 days
PDF File icon Datasheet