TSM1NB60CP ROG

S SEMICONDUCTOR|g **TSM1NB60** Taiwan Semiconductor 

## **N-Channel Power MOSFET** 

600V, 1A, 10Ω 

## FEATURES 

- Advanced planar process 

- 100% avalanche tested 

- Low RDS(ON) 8Ω (Typ.) 

- Low gate charge typical @ 6.1 nC (Typ.) 

- Low Crss typical @4.2pF (Typ.) 

|KEY PERFORMANCE PARAMETERS|KEY PERFORMANCE PARAMETERS|KEY PERFORMANCE PARAMETERS|
|---|---|---|
|PARAMETER|VALUE|UNIT|
|VDS|600|V|
|RDS(on) (max)|10|Ω|
|Qg|6.1|nC|



## APPLICATION 

- Power Supply 

- Lighting 

- Charger 

**SOT-223 TO-251 (IPAK) TO-252 (DPAK)** %8 D~ 3° “ bo 

**Notes:** MSL 3 (Moisture Sensitivity Level) for TO-252 (D-PAK), SOT-223 per J-STD-020 

~~|~~ ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL IPAK/DPAK SOT-223 UNIT ~~a es~~ Drain-Source Voltage ~~rs~~ VDS 600 V ~~es~~ Gate-Source Voltage ~~er~~ VGS ±30 V TC = 25°C 1 Continuous Drain Current[(Note 1)] ID A ~~ee|~~ TC = 100°C ~~ee~~ 0.7 ~~ces ee ee es~~ Pulsed Drain Current[(Note 2)] IDM 4 A ~~es~~ Total Power Dissipation @ TC = 25°C PDTOT 39 2.1 W ~~es~~ Single Pulsed Avalanche Energy[(Note 3)] EAS 5 mJ ~~es~~ Single Pulsed Avalanche Current[(Note 3)] IAS 1 A ~~Ge~~ Peak Diode Recovery dv/dt[(Note 4)] dv/dt 4.5 V/ns ~~rs~~ Operating Junction and Storage Temperature Range ~~rs~~ TJ, TSTG - 55 to +150 °C 

## THERMAL PERFORMANCE 

|THERMAL PERFORMANCE|||||
|---|---|---|---|---|
|PARAMETER|SYMBOL IPAK/DPAK|SYMBOL IPAK/DPAK|SOT-223|UNIT|
|Junction to Case Thermal Resistance|RӨJC|2.87|--|°C/W|
|Junction to Ambient Thermal Resistance|RӨJA|110|60|°C/W|



**Notes:** RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air. 

Document Number: DS_P0000038 

1                                                                 Version: D1706 

SEMICONDUCTOR$$ **TSM1NB60** Taiwan Semiconductor $5 Eteeee§ 

|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)<br>~~a~~|
|---|---|---|---|---|---|---|
|PARAMETER<br>~~GG~~|CONDITIONS<br>~~GG~~|SYMBOL<br>~~GG~~|MIN<br>~~GG~~|TYP<br>~~GG~~|MAX<br>~~GG~~|UNIT<br>~~GG~~|
|**Static (Note 5)**<br>~~a~~|||||||
|Drain-Source Breakdown Voltage<br>~~GG~~<br>~~po~~|VGS= 0V, ID= 250µA<br>~~GG~~|BVDSS<br>~~GG~~|600<br>~~GG~~|--<br>~~GG~~|--<br>~~GG~~|V<br>~~GG~~|
|Drain-Source On-State Resistance<br>~~po~~<br>~~po~~|VGS= 10V, ID= 0.5A|RDS(ON)|--|8|10|Ω|
|Gate Threshold Voltage<br>~~po~~<br>~~po~~<br>~~po~~|VDS= VGS, ID= 250µA|VGS(TH)|2.5|3.5|4.5|V|
|Zero Gate Voltage Drain Current<br>~~po~~<br>~~po~~<br>~~pe~~|VDS= 600V, VGS= 0V|IDSS|--|--|10|µA|
|Gate Body Leakage<br>~~po~~<br>~~pe~~|VGS= ±30V, VDS= 0V|IGSS|--|--|±100|nA|
|Forward Transfer Conductance<br>~~pe~~<br>~~GG~~|VDS= 10V, ID= 0.5A<br>~~GG~~|gfs<br>~~GG~~|--<br>~~GG~~|0.8<br>~~GG~~|--<br>~~GG~~|S<br>~~GG~~|
|**Dynamic (Note 6)**<br>~~GG~~<br>~~a~~<br>~~eeee~~<br>~~oo~~|||||||
|Total Gate Charge<br>~~a~~<br>~~a~~<br>~~oo~~<br>~~oo~~|VDS= 480V, ID= 1A,<br>VGS= 10V<br>~~a~~<br>~~a~~|Qg<br>~~a~~<br>~~a~~<br>~~ee~~|--<br>~~a~~<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|6.1<br>~~a~~<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|--<br>~~a~~<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|nC<br>~~a~~<br>~~a~~|
|Gate-Source Charge<br>~~a~~<br>~~oo~~<br>~~oo~~<br>~~co~~||Qgs<br>~~a~~<br>~~ee~~<br>~~ee~~|--<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|1.4<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|--<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|Gate-Drain Charge<br>~~oo~~<br>~~oo~~<br>~~co~~||Qgd<br>~~ee~~<br>~~ee~~|--<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|3.3<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|Input Capacitance<br>~~oo~~<br>~~co~~|VDS= 25V, VGS= 0V,<br>f = 1.0MHz|Ciss<br>~~ee~~<br>~~ee~~|--<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|138<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|pF<br>~~ee~~|
|Output Capacitance<br>~~co~~<br>~~eee~~||Coss<br>~~**e**~~<br>~~e~~|--<br>~~ee~~<br>~~**e**e~~|17.1<br>~~ee~~<br>~~e~~<br>~~ee~~|--<br>~~ee~~<br>~~e~~<br>~~ee~~||
|Reverse Transfer Capacitance<br>~~eee~~||Crss<br>~~**e**~~<br>~~e~~|--<br>~~**e**e~~|4.2<br>~~e~~<br>~~ee~~|--<br>~~e~~<br>~~ee~~||
|Gate Resistance<br>~~eee~~<br>~~po~~|F = 1MHz, open drain<br>~~po~~|Rg<br>~~**e**~~<br>~~e~~<br>~~po~~|--<br>~~**e**e~~<br>~~po~~|12.5<br>~~e~~<br>~~ee~~<br>~~po~~|--<br>~~e~~<br>~~ee~~<br>~~po~~|Ω<br>~~ee~~<br>~~po~~|
|**Switching (Note 7)**<br>~~eee~~<br>~~eee~~<br>~~ee~~|||||||
|Turn-On Delay Time<br>~~eee~~<br>~~eee~~|VDD= 300V, RG=25Ω<br>ID= 1A, VGS= 10V<br>~~eee~~<br>~~eee~~|td(on)<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~|7.7<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~|ns|
|Turn-On Rise Time<br>~~eee~~<br>~~eee~~<br>~~a~~||tr<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~<br>~~e~~~~**e**~~|6.8<br>~~ee~~<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|Turn-Off Delay Time<br>~~eee~~<br>~~a~~<br>~~a~~<br>~~Ce~~||td(off)<br>~~ee~~<br>~~ee~~<br>|--<br>~~ee~~<br>~~ee~~<br>~~e~~~~**e**~~<br>~~ee~~|15.3<br>~~ee~~<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|Turn-Off Fall Time<br>~~a~~<br>~~Ce~~||tf<br>~~e~~|--<br>~~e~~~~**e** ~~<br>~~eee~~|14.9<br> ~~ee~~|--<br>~~ee~~||
|**Source-Drain Diode (Note 5)**<br>~~ee~~<br>~~Ce~~<br>~~eeeeeeeeeeepDRERANDUDn——_—_|~~|||||||
|Diode Forward Voltage<br>~~Ce~~<br>~~Ge~~<br>~~eo~~|IS= 1A, VGS= 0V<br>~~Ge~~|VSD<br><br>~~Ge~~|--<br>~~ee~~<br>~~Ge~~<br>~~ee~~|0.9<br>~~Ge~~<br>~~ee~~|1.4<br>~~Ge~~<br>~~ee~~|V<br>~~Ge~~|
|Source Current<br>~~eee~~<br>~~eo~~|Integral reverse diode<br>In the MOSFET<br>~~eee~~|IS<br>~~eee~~<br>~~ee~~|--<br>~~eee~~<br>~~ee~~|--<br>~~eee~~<br>~~ee~~<br>~~ee~~|1<br>~~eee~~<br>~~ee~~<br>~~ee~~|A<br>~~eee~~<br>~~ee~~|
|Source Current (Pulse)<br>~~eee~~<br>~~eo~~||ISM<br>~~eee~~<br>~~ee~~|--<br>~~eee~~<br>~~ee~~|--<br>~~eee~~<br>~~ee~~<br>~~ee~~|4<br>~~eee~~<br>~~ee~~<br>~~ee~~||



2. Pulse width limited by the maximum junction temperature. 

3. L = 10mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25[o] C. 

4. ISD≤1A , VDD≤BVDSS , di/dt≤200A/us , Starting TJ = 25[o] C. 

5. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%. 

6. For DESIGN AID ONLY, not subject to production testing. 

7. Switching time is essentially independent of operating temperature. 

Document Number: DS_P0000038 

2                                                                 Version: D1706 

**TSM1NB60** (i Taiwan Semiconductor 

SEMICONDUCTOR(i 

## ORDERING INFORMATION 

|PART NO.|PACKAGE|PACKING|
|---|---|---|
|TSM1NB60CH C5G|TO-251|75pcs / Tube|
|TSM1NB60CP ROG|TO-252|2,500pcs / 13” Reel|
|TSM1NB60CW RPG|SOT-223|2,500pcs / 13” Reel|



## **Note:** 

1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC 

2. Halogen-free according to IEC 61249-2-21 definition 

Document Number: DS_P0000038 

3                                                                 Version: D1706 

TAIWANLeche erica **TSM1NB60** Taiwan Semiconductor 

## PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) 

## **TO-251** 

## MARKING DIAGRAM 

**Y** = Year Code 

**M** = Month Code for Halogen Free Product 

1NB60 YML 

**O** =Jan **P** =Feb **Q** =Mar **R** =Apr **S** =May **T** =Jun **U** =Jul **V** =Aug **W** =Sep **X** =Oct **Y** =Nov **Z** =Dec **L** = Lot Code (1~9, A~Z) 

Document Number: DS_P0000038 

4                                                                 Version: D1706 

**TSM1NB60** TAIWANSEMICONDUCTOR(jap Taiwan Semiconductor 

## PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) 

## **TO-252** 

## SUGGESTED PAD LAYOUT 

## MARKING DIAGRAM 

**Y** = Year Code 

**M** = Month Code for Halogen Free Product 

1NB60 YML 

**O** =Jan **P** =Feb **Q** =Mar **R** =Apr **S** =May **T** =Jun **U** =Jul **V** =Aug **W** =Sep **X** =Oct **Y** =Nov **Z** =Dec **L** = Lot Code (1~9, A~Z) 

Document Number: DS_P0000038 

5                                                                 Version: D1706 

**TSM1NB60** (pg Taiwan Semiconductor 

SEMICONDUCTOR(pg 

## PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) 

## **TO-252** 

## SUGGESTED PAD LAYOUT (Unit: Millimeters) 

## MARKING DIAGRAM 

**Y** = Year Code 

**M** = Month Code for Halogen Free Product 1NB60 YML **O** =Jan **P** =Feb **Q** =Mar **R** =Apr **S** =May **T** =Jun **U** =Jul **V** =Aug **W** =Sep **X** =Oct **Y** =Nov **Z** =Dec ial **L** = Lot Code (1~9, A~Z) 

Document Number: DS_P0000038 

6                                                                 Version: D1706 

**TSM1NB60** (ig Taiwan Semiconductor 

SEMICONDUCTOR(ig 

## PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) 

**==> picture [44 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
SOT-223<br>**----- End of picture text -----**<br>


## SUGGESTED PAD LAYOUT 

## MARKING DIAGRAM 

**Y** = Year Code 

**M** = Month Code for Halogen Free Product **O** =Jan **P** =Feb **Q** =Mar **R** =Apr **S** =May **T** =Jun **U** =Jul **V** =Aug **W** =Sep **X** =Oct **Y** =Nov **Z** =Dec **L** = Lot Code (1~9, A~Z) 

Document Number: DS_P0000038 

7                                                                 Version: D1706 

**TSM1NB60** (i Taiwan Semiconductor 

SEMICONDUCTOR(i 

## **Notice** 

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. 

Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. 

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 

Document Number: DS_P0000038 

8                                                                 Version: D1706