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TSF30H60C
Schottky Rectifier, 60 V, 30 A, Dual Common Cathode, ITO-220AB, 3 Pins, 700 mV
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: TAIWAN SEMICONDUCTOR
- Product type: Schottky Rectifier Diodes
- SVHC: No SVHC (27-Jun-2018)
- No. of Pins: 3Pins
- Product Range: Trench Series
- Qualification: -
- Diode Mounting: Through Hole
- Diode Case Style: ITO-220AB
- Diode Configuration: Dual Common Cathode
- Forward Voltage Max: 700mV
- Forward Surge Current: 230A
- Average Forward Current: 30A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 60V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.573 € |
| Current stock | 1000+ |
| Lead time | 30 days |
**TSF30H60C** Taiwan Semiconductor ## **30A, 60V Trench Schottky Rectifier** ## FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low power loss, high efficiency - High forward surge capability - RoHS Compliant - Halogen-free according to IEC 61249-2-21 ## APPLICATIONS - Switching mode power supply (SMPS) - Adapters - Lighting application - On-board DC/DC converter |KEY PARAMETERS|KEY PARAMETERS|KEY PARAMETERS| |---|---|---| |PARAMETER|VALUE|UNIT| |IF|2 x 15|A| |VRRM|60|V| |IFSM|230|A| |TJ MAX|150|°C| |Package|ITO-220AB|| |Configuration|Dual dies|| **==> picture [130 x 34] intentionally omitted <==** **----- Start of picture text -----**<br> (Pd) ROHS HALOGEN<br>= COMPLIANT FREE<br>**----- End of picture text -----**<br> ## MECHANICAL DATA - Case: ITO-220AB - Molding compound meets UL 94V-0 flammability rating - Terminal: Matte tin plated leads, solderable per J-STD-002 - Meet JESD 201 class 2 whisker test - Mounting torque: 0.56 N ⋅ m maximum - Polarity: As marked - Weight: 1.75g (approximately) ## **ITO-220AB** |ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)| |---|---|---|---|---| |PARAMETER||SYMBOL|TSF30H60C|UNIT| |Marking code on the device|||TSF30H60C|| |Repetitive peak reverse voltage||VRRM|60|V| |Reverse voltage, total rms value||VR(RMS)|42|V| |Forward current|per device|per device<br>IF|30|A| ||per diode||15|A| |Surge peak forward current single half sine-<br>wave superimposed on rated load per diode|t = 8.3ms|IFSM|230|A| ||t = 1.0ms||620|A| |Junction temperature||TJ|-55 to +150|°C| |Storage temperature||TSTG|-55 to +150|°C| 1 Version: D2102 **TSF30H60C** (i Taiwan Semiconductor SEMICONDUCTOR(i |THERMAL PERFORMANCE|THERMAL PERFORMANCE|THERMAL PERFORMANCE|THERMAL PERFORMANCE| |---|---|---|---| |PARAMETER|SYMBOL|TYP|UNIT| |Junction-to-lead thermal resistance per diode|RӨJL|3.4|°C/W| |Junction-to-ambient thermal resistance per diode|RӨJA|14.8|°C/W| |Junction-to-case thermal resistance per diode|RӨJC|3.0|°C/W| **Thermal Performance Note:** Mounted on Heat sink with 2" x 3" x 0.25" Al-Plate. |ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)| |---|---|---|---|---|---| |PARAMETER|CONDITIONS|SYMBOL|TYP|MAX|UNIT| |Forward voltage per diode(1)|IF= 7.5A, TJ= 25°C|VF|0.47|-|V| ||IF= 15A, TJ= 25°C||0.55|0.70|V| ||IF= 7.5A, TJ= 125°C||0.38|-|V| ||IF= 15A, TJ= 125°C||0.50|0.67|V| |Reverse current @ rated VRper diode(2)|TJ= 25°C|IR|-|50|µA| ||TJ= 125°C||-|45|mA| |Junction capacitance per diode|1MHz, VR= 4.0V|CJ|1117|-|pF| ## **Notes:** 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ## ORDERING INFORMATION |ORDERING CODE|PACKAGE|PACKING| |---|---|---| |TSF30H60C|ITO-220AB|50 / Tube| 2 Version: D2102 **TSF30H60C** EEE Taiwan Semiconductor ## CHARACTERISTICS CURVES ## (TA = 25°C unless otherwise noted) ## **Fig.1 Forward Current Derating Curve** ## **Fig.2 Typical Junction Capacitance** **==> picture [214 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>25 50 75 100 125 150<br>CASE TEMPERATURE ( ° C)<br>AVERAGE FORWARD CURRENT (A)<br>**----- End of picture text -----**<br> ## **Fig.3 Typical Reverse Characteristics** **==> picture [227 x 178] intentionally omitted <==** **----- Start of picture text -----**<br> 100000<br>SS TJ=150 ° C SSS<br>10000 ———<— —————————————————— a —|<br>1000 i TJ=125 ° C<br>100<br>a a<br>SSS SSS<br>10 ft TJ=25 tf ° C<br>e e e<br>1 a<br>10 20 30 40 50 60 70 80 90 100<br>PERCENT OF RATED PEAK REVERSE VOLTAGE (%)<br>INSTANTANEOUS REVERSE CURRENT (μA)<br>**----- End of picture text -----**<br> **==> picture [227 x 407] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>Rs se ee Oe Oe GO OO<br>ee ee<br>1000 aSe<br>——_—_—a es ee ===>ee ee eeeeeet<br>100 to<br>Pi yyy,<br>f=1.0MHz<br>Vsig=50mVp-p<br>10 eRe mi<br>1 10 100<br>REVERSE VOLTAGE (V)<br> Fig.4 Typical Forward Characteristics<br>100<br>————<br>-—a GQ_ SS |<br>10 e TJ ° =150 ° C eaS =<br>TJ=125 C<br>TJ=25 ° C<br>1 ee| ff / Anft7fpae|<br>TJ=-55 ° C<br>—f fF<br>HF PF Pulse width 300μs —<br>1% duty cycle<br>0.1 o /sa a<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8<br>FORWARD VOLTAGE (V)<br>CAPACITANCE (pF)<br>INSTANTANEOUS FORWARD CURRENT (A)<br>**----- End of picture text -----**<br> **Fig.5 Typical Transient Thermal Impedance** **==> picture [396 x 198] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>ec |<br>1<br>PTI TIE TTIrNTIT<br>| TT ETART<br>0.1 BERZ<br>LT LT OALTT)<br>0.01 PATTIETIME TIE TTT TITIE TTT<br>0.001 1Zr A TTCCTCEMENTTTCCITT<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100<br>PULSE DURATION (s)<br>TRANSIENT THERMAL IMPEDANCE (°C/W)<br>**----- End of picture text -----**<br> 3 Version: D2102 **TSF30H60C** RR EEE——E Taiwan Semiconductor ## PACKAGE OUTLINE DIMENSIONS **==> picture [52 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> ITO-220AB<br>**----- End of picture text -----**<br> ## MARKING DIAGRAM P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code 4 Version: D2102 **TSF30H60C** (i Taiwan Semiconductor SEMICONDUCTOR(i ## Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5 Version: D2102
Updated at June 10, 2026
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