TSC497CX RFG

Bipolar (BJT) Single Transistor, NPN, 300 V, 500 mA, 500 mW, TO-236AB (SOT-23), Surface Mount

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Manufacturer: TAIWAN SEMICONDUCTOR
Product type:
MSL: MSL 1 - Unlimited
SVHC: No SVHC (27-Jun-2018)
No. of Pins: 3Pins
Product Range: -
Qualification: -
Power Dissipation: 500mW
Transistor Mounting: Surface Mount
Transistor Polarity: NPN
Transition Frequency: 75MHz
Transistor Case Style: TO-236AB (SOT-23)
DC Current Gain hFE Min: 20hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 500mA
Collector Emitter Voltage Max: 300V

Delivery and price
Units per pack	5000
Price	0.101 €
Current stock	1000+
Lead time	30 days

Datasheet

**TSC497CX** Taiwan Semiconductor 

SEMICONDUCTOR(yg 

## **300V High Performance NPN Transistor** 

## FEATURES 

- Epitaxial Planar Type 

- NPN Silicon Transistor 

- Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC 

- Halogen-free according to IEC 61249-2-21 

## APPLICATION 

## KEY PERFORMANCE PARAMETERS 

|KEY PERFORMANCE PARAMETERS|KEY PERFORMANCE PARAMETERS|KEY PERFORMANCE PARAMETERS|KEY PERFORMANCE PARAMETERS|
|---|---|---|---|
|PARAMETER||VALUE|UNIT|
|BVCBO||300|V|
|BVCEO||300|V|
|IC||500|mA|
|VCE(SAT)|IC=100mA, IB=10mA|0.2|V|



- Consumer electronics 

- High voltage switching 

- High voltage driver 

## **SOT-23** 

**Notes:** MSL 1 (Moisture Sensitivity Level) per J-STD-020 

|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|
|---|---|---|---|
|PARAMETER|SYMBOL|LIMIT|UNIT|
|Collector-Base Voltage|VCBO|300|V|
|Collector-Emitter Voltage|VCEO|300|V|
|Emitter-Base Voltage|VEBO|5|V|
|Collector Current(DC)|IC|500|mA|
|Collector Peak Current(Pulse) Note|ICM|1|A|
|Base Current|IB|200|mA|
|Power Total Dissipation@TA=25ºC|PD|0.5|W|
|Maximum OperatingJunction Temperature|TJ|+150|oC|
|Storage Temperature Range|TSTG|-55 to +150|oC|



**Note:** Single pulse, Pw ≤ 380µs, Duty ≤ 2% 

|THERMAL PERFORMANCE|THERMAL PERFORMANCE|THERMAL PERFORMANCE|THERMAL PERFORMANCE|
|---|---|---|---|
|PARAMETER|SYMBOL|TYP|UNIT|
|Junction to Ambient Thermal Resistance|RӨJA|420|oC/W|
|Junction to Case Thermal Resistance|RӨJC|155|oC/W|



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**TSC497CX** Taiwan Semiconductor 

|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|
|---|---|---|---|---|---|---|
|PARAMETER<br>~~GO~~|CONDITIONS<br>~~GO~~|SYMBOL<br>~~GO~~|MIN<br>~~GO~~|TYP<br>~~GO~~|MAX<br>~~GO~~|UNIT<br>~~GO~~|
|**Static(Note 1)**<br>~~pC~~|||||||
|Collector-Base Breakdown Voltage<br>~~pC~~<br>~~GG~~|IC= 100µA<br>~~pC~~<br>~~GG~~|BVCBO<br>~~pC~~<br>~~GG~~|300<br>~~pC~~<br>~~GG~~|--<br>~~pC~~<br>~~GG~~|--<br>~~pC~~<br>~~GG~~|V<br>~~pC~~<br>~~GG~~|
|Collector-Emitter Breakdown Voltage<br>~~GG~~|IC= 10mA<br>~~GG~~|BVCEO<br>~~GG~~|300<br>~~GG~~|--<br>~~GG~~|--<br>~~GG~~|V<br>~~GG~~|
|Emitter-Base Breakdown Voltage<br>~~GG~~|IE= 100µA<br>~~GG~~|BVEBO<br>~~GG~~|5<br>~~GG~~|--<br>~~GG~~|--<br>~~GG~~|V<br>~~GG~~|
|Collector Cutoff Current<br>~~GG~~|VCB= 250V<br>~~GG~~|ICBO<br>~~GG~~|--<br>~~GG~~|--<br>~~GG~~|100<br>~~GG~~|nA<br>~~GG~~|
|Collector Cutoff Current<br>~~GG~~|VCES= 250V<br>~~GG~~|ICES<br>~~GG~~|--<br>~~GG~~|--<br>~~GG~~|100<br>~~GG~~|nA<br>~~GG~~|
|Emitter Cutoff Current<br>~~GG~~<br>~~ee~~|VEB= 4V<br>~~GG~~<br>~~ee~~|IEBO<br>~~GG~~<br>~~ee~~|--<br>~~GG~~<br>~~ee~~|--<br>~~GG~~<br>~~ee~~|100<br>~~GG~~<br>~~ee~~|nA<br>~~GG~~<br>~~ee~~|
|Collector-Emitter Saturation Voltage<br>~~ee~~|IC=100mA, IB=10mA<br>~~ee~~|VCE(SAT)<br>1<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~|--<br>~~ee~~|0.2<br>~~ee~~|V<br>~~ee~~|
||IC=250mA, IB=25mA<br>~~ee~~<br>~~es~~|VCE(SAT)<br>2<br>~~ee~~<br>~~es~~<br>~~ee~~|--<br>~~ee~~<br>~~es~~<br>~~ee~~|--<br>~~ee~~<br>~~es~~|0.3<br>~~ee~~<br>~~es~~|V<br>~~ee~~<br>~~es~~|
|Base-Emitter Saturation Voltage<br>~~ee~~<br>~~GG~~|IC=250mA,IB=25mA<br>~~ee~~<br>~~GG~~|VBE(SAT)<br>~~ee~~<br>~~ee~~<br>~~GG~~|--<br>~~ee~~<br>~~ee~~<br>~~GG~~|--<br>~~ee~~<br>~~GG~~|1<br>~~ee~~<br>~~GG~~|V<br>~~ee~~<br>~~GG~~|
|Base-Emitter Turn-on Voltage<br>~~GG~~|IC=250mA,VCE=10V<br>~~GG~~|VBE(ON)<br>~~GG~~|--<br>~~GG~~|--<br>~~GG~~|1<br>~~GG~~|V<br>~~GG~~|
|DC Current Transfer Ratio|VCE=10V,IC=1mA,<br>~~es~~|hFE<br>1<br>~~es~~|100<br>~~es~~|--<br>~~es~~|--<br>~~es~~|~~es~~|
||VCE=10V, IC=100mA,<br>~~es~~|hFE<br>2<br>~~es~~|80<br>~~es~~|--<br>~~es~~|300<br>~~es~~|~~es~~|
||VCE=10V, IC=250mA,<br>~~es~~|hFE<br>3<br>~~es~~|20<br>~~es~~|--<br>~~es~~|--<br>~~es~~|~~es~~|
|**Dynamic(Note 2)**<br>~~pn~~|||||||
|Transition Frequency|VCE=-10V, IC=-30mA,<br>f=100MHz|fT|75|--|--|MHz|
|Collector Output Capacitance<br>~~pO~~|VCB=-10V, IE=0A,<br>f=100MHz<br>~~—~~|Cob<br>~~—~~<br>~~|~~|--<br>~~|~~|--<br>~~ff~~|5<br>~~ff~~|pF<br>~~ff~~|
|DelayTime<br>~~pO~~<br>~~pO~~<br>~~pO~~|VCC=100V, IC=100mA,<br>IB1=-IB2=10mA<br>~~—~~<br>~~—~~|td<br>~~—~~<br>~~|~~<br>~~ft~~|--<br>~~|~~<br>~~ft~~<br>~~|~~|53<br>~~ff~~<br>~~ft~~<br>~~|~~|--<br>~~ff~~<br>~~ft~~|ns<br>~~ff~~<br>~~ft~~|
|Rise Time<br>~~pO~~<br>~~pO~~<br>~~pO~~<br>~~pe~~||tr<br>~~—~~<br>~~|~~<br>~~ft~~<br>~~—|~~|--<br>~~|~~<br>~~ft~~<br>~~|~~<br>~~|~~|126<br>~~ff~~<br>~~ft~~<br>~~|~~<br>~~ft~~|--<br>~~ff~~<br>~~ft~~<br>~~ft~~|ns<br>~~ff~~<br>~~ft~~<br>~~ft~~|
|Storage Time<br>~~pO~~<br>~~pO~~<br>~~pe~~||ts<br>~~ft~~<br>~~—|~~<br>~~ee~~|--<br>~~ft~~<br>~~|~~<br>~~|~~<br>~~ee~~|2580<br>~~ft~~<br>~~|~~<br>~~ft~~<br>~~ee~~|--<br>~~ft~~<br>~~ft~~<br>~~ee~~|ns<br>~~ft~~<br>~~ft~~<br>~~ee~~|
|Fall Time<br>~~pO~~<br>~~pe~~||tf<br>~~—|~~<br>~~ee~~|--<br>~~|~~<br>~~|~~<br>~~ee~~|228<br>~~|~~<br>~~ft~~<br>~~ee~~|--<br>~~ft~~<br>~~ee~~|ns<br>~~ft~~<br>~~ee~~|



**Note:** 

1. Pulse test: ≤380µs, duty cycle ≤2% 

2. For DESIGN AID ONLY, not subject to production testing 

## ORDERING INFORMATION 

|ORDERING CODE|PACKAGE|PACKING|
|---|---|---|
|TSC497CX RFG|SOT-23|3,000pcs / 7” Reel|



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SEMICONDUCTOR [pg 

## ELECTRICAL CHARACTERICS CURVES (TA=25[o] C, unless otherwise noted) 

**Figure 1. VCE(sat) vs. Collector Current** 

**Figure 2. DC Current Gain** 

**Figure 3. VBE(sat) vs. Collector Current** 

**Figure 4. VBE(on) vs. Collector Current** 

**Figure 5. Safe Operating Area** 

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**TSC497CX** Taiwan Semiconductor 

SEMICONDUCTORgp 

## PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) 

## **SOT-23** 

## SUGGESTED PAD LAYOUT (Unit: Millimeters) 

## MARKING DIAGRAM 

**C9** = Device Code **Y** = Year Code **M** = Month Code for Halogen Free Product 

**O** =Jan **P** =Feb **Q** =Mar **R** =Apr **S** =May **T** =Jun **U** =Jul **V** =Aug **W** =Sep **X** =Oct **Y** =Nov **Z** =Dec **L** = Lot Code (1~9, A~Z) 

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**TSC497CX** Taiwan Semiconductor 

SEMICONDUCTOR(i 

## **Notice** 

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. 

Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. 

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 

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Updated at June 1, 2026

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