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TSAD35M60H
Schottky Rectifier, 60 V, 35 A, Single Dual Anode, ThinDPAK, 2 Pins, 750 mV
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: TAIWAN SEMICONDUCTOR
- Product type: Schottky Rectifier Diodes
- SVHC: No SVHC (04-Feb-2026)
- No. of Pins: 2Pins
- Product Range: -
- Qualification: AEC-Q101
- Diode Mounting: Surface Mount
- Diode Case Style: ThinDPAK
- Diode Configuration: Single Dual Anode
- Forward Voltage Max: 750mV
- Forward Surge Current: 470A
- Average Forward Current: 35A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 60V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.383 € |
| Current stock | 10+ |
| Lead time | 30 days |
% SEMICONDUCTOR[lpg **TSAD35M60H** Taiwan Semiconductor ## **35A, 60V Trench Schottky Surface Mount Rectifier** ## FEATURES - AEC-Q101 qualified - Low power loss, high efficiency - Ideal for automated placement - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020 - RoHS Compliant - Halogen-free ## APPLICATIONS - Low voltage, high frequency - DC/DC converter |KEY PARAMETERS|KEY PARAMETERS|KEY PARAMETERS| |---|---|---| |PARAMETER|VALUE|UNIT| |IF|35|A| |VRRM|60|V| |IFSM|470|A| |TJ MAX|175|°C| |Package|ThinDPAK|| |Configuration|Single die|| ## ) ROHS HALOGEN ThnDPAK® - Freewheeling diodes - Reverse battery protection - Car lighting ## MECHANICAL DATA - Case: ThinDPAK - Molding compound meets UL 94V-0 flammability rating - Terminal: Matte tin plated leads, solderable per J-STD-002 **==> picture [51 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> ThinDPAK<br>**----- End of picture text -----**<br> - Meet JESD 201 class 2 whisker test - Polarity: Indicated by cathode band - Weight: 0.20g (approximately) |ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)| |---|---|---|---| |PARAMETER|SYMBOL|VALUE|UNIT| |Repetitive peak reverse voltage|VRRM|60|V| |Reverse voltage, total rms value|VR(RMS)|42|V| |Forward current|IF|35|A| |Peak forward surge current, 8.3ms single half sine-<br>wave superimposed on rated load|IFSM|470|A| |Junction temperature|TJ|- 55 to +175|°C| |Storage temperature|TSTG|- 55 to +175|°C| 1 Version: A2601 **TSAD35M60H** TAIWANSEMICONDUCTOR(jig Taiwan Semiconductor **==> picture [499 x 47] intentionally omitted <==** **----- Start of picture text -----**<br> ||||| |---|---|---|---| |THERMAL PERFORMANCE| |PARAMETER|SYMBOL|TYP|UNIT| |Junction-to-mount thermal resistance|RӨJM|0.7|°C/W| **----- End of picture text -----**<br> **Thermal Performance Note:** With ideal heat sink ## ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) **==> picture [500 x 132] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||| |---|---|---|---|---|---| |PARAMETER|CONDITIONS|SYMBOL|TYP|MAX|UNIT| |IF = 17.5A, TJ = 25°C|0.57|-|V| |IF = 35A, TJ = 25°C|0.71|0.75|V| |Forward voltage|[(1)]|VF| |IF = 17.5A, TJ = 125°C|0.52|-|V| |IF = 35A, TJ = 125°C|0.65|0.69|V| |TJ = 25°C|-|200|μA| |Reverse current @ rated VR|[(2)]|IR| |TJ = 125°C|-|60|mA| |Junction capacitance|1MHz, VR = 4.0V|CJ|1170|-|pF| **----- End of picture text -----**<br> **Notes:** 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms **==> picture [473 x 46] intentionally omitted <==** **----- Start of picture text -----**<br> |||| |---|---|---| |ORDERING INFORMATION| |ORDERING CODE|PACKAGE|PACKING| |TSAD35M60H|ThinDPAK|4,500 / Tape & Reel| **----- End of picture text -----**<br> 2 Version: A2601 **TSAD35M60H** E————EExEoEws Taiwan Semiconductor GMD, E————EExEoEws ## CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) ## **Fig.1 Forward Current Derating Curve** **==> picture [220 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 40<br>a<br>353025 Poeee<br>20<br>15 ee eee 0<br>105 eeeee<br>0 PoPeee |<br>0 25 50 75 100 125 150 175<br>MOUNT TEMPERATURE (°C)<br>AVERAGE FORWARD CURRENT (A)<br>**----- End of picture text -----**<br> ## **Fig.3 Typical Reverse Characteristics** **==> picture [209 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 100000<br>TJ=175 ° C<br>10000<br>1000 TJ=125 ° C TJ=150 ° C<br>——S==== === ==<br>100<br>— Es a<br>es °<br>10 TJ=25 C<br>| —<br>e e<br>1 G<br>10 20 30 40 50 60 70 80 90 100<br>PERCENT OF RATED PEAK REVERSE VOLTAGE (%)<br>**----- End of picture text -----**<br> ## **Fig.2 Typical Junction Capacitance** **==> picture [226 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 10000 SS<br>Eo<br>a<br>EH<br>pe<br>OSH<br>1000 Seea es eereOO OseeO°eereeeOO OO<br>era<br>PT TESST<br>f=1.0MHz<br>Vsig=50mVp-p<br>100 anTANeneniLET<br>0.1 1 10 100<br>REVERSE VOLTAGE (V)<br>CAPACITANCE (pF)<br>**----- End of picture text -----**<br> ## **Fig.4 Typical Forward Characteristics** **==> picture [225 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>TJ=175 ° C<br>10 TJ=150 ° C<br>ae, TJ=125 ° C ara —— TJ=25 ° C<br>1 |__| 44 | f | ____f|__f ~<br>TJ=-55 ° C<br>— FTF Ff<br>J Pulse width 300μs<br>1% duty cycle<br>0.1 S/nA<br>a7 a<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8<br>FORWARD VOLTAGE (V)<br>INSTANTANEOUS FORWARD CURRENT (A)<br>**----- End of picture text -----**<br> **Fig.5 Typical Forward Power Dissipation vs. Forward Current** **==> picture [227 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 22<br>CoCo<br>20 EECCACoCo eee δ = 1 pd<br>18 CECE<br>CECE<br>16 CECE<br>CECE<br>14 SRRSSSSeS”<br>COC CoAA<br>12 COC δ = 0.5 COAL<br>COC wy. ° cI<br>108 CoCoCeCoeeCocco] δ = 0.2 CoBEDAATap" 4a TJ=175 T C cI<br>CoCo APT<br>6 δ = 0.1 CoA ooo<br>4 SOONEaoy<cattatatt>” .dcnneeeenen<br>2 COCOACoBerOegearCeCeCe & tpt tp<br>0 P_ saeneee eee<br>0 5 10 15 20 25 30 35<br>FORWARD CURRENT (A)<br>POWER DISSIPATION (W)<br>**----- End of picture text -----**<br> 3 Version: A2601 **TSAD35M60H** TAIWANSEMICONDUCTOR[lage Taiwan Semiconductor ## CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) ## **Fig.6 Typical Transient Thermal Characteristics** **==> picture [368 x 179] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>0.1<br>0.01<br>0.001<br>0.0001 PT TT PEEPPT<br>1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00<br>TRANSIENT THERMAL IMPEDANCE (°C/W)<br>**----- End of picture text -----**<br> PULSE DURATION (s) 4 Version: A2601 TAIWANGM O*VDAKR NR EE————EEEuwuw **TSAD35M60H** as Taiwan Semiconductor ## PACKAGE OUTLINE DIMENSIONS **==> picture [56 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> ThinDPAK<br>**----- End of picture text -----**<br> YWWF T3560 1 2 MARKING DIAGRAM YWW = DATE CODE F = FACTORY CODE 5 Version: A2601 **TSAD35M60H** (jig Taiwan Semiconductor SEMICONDUCTOR(jig ## Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: A2601
Updated at June 10, 2026
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