TSAD35H120H

% SEMICONDUCTOR[lpg **TSAD35H120H** Taiwan Semiconductor 

## **35A, 120V Trench Schottky Surface Mount Rectifier** 

## FEATURES 

- AEC-Q101 qualified 

- Low power loss, high efficiency 

- Ideal for automated placement 

- High surge current capability 

- Moisture sensitivity level: level 1, per J-STD-020 

- RoHS Compliant 

- Halogen-free 

## APPLICATIONS 

- Low voltage, high frequency 

- DC/DC converter 

|KEY PARAMETERS|KEY PARAMETERS|KEY PARAMETERS|
|---|---|---|
|PARAMETER|VALUE|UNIT|
|IF|35|A|
|VRRM|120|V|
|IFSM|420|A|
|TJ MAX|175|°C|
|Package|ThinDPAK||
|Configuration|Single die||



## ) ROHS HALOGEN ThnDPAK® 

- Freewheeling diodes 

- Reverse battery protection 

- Car lighting 

## MECHANICAL DATA 

- Case: ThinDPAK 

- Molding compound meets UL 94V-0 flammability rating 

- Terminal: Matte tin plated leads, solderable per J-STD-002 

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- Meet JESD 201 class 2 whisker test 

- Polarity: Indicated by cathode band 

- Weight: 0.20g (approximately) 

|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|
|---|---|---|---|
|PARAMETER|SYMBOL|VALUE|UNIT|
|Repetitive peak reverse voltage|VRRM|120|V|
|Reverse voltage, total rms value|VR(RMS)|84|V|
|Forward current|IF|35|A|
|Peak forward surge current, 8.3ms single half sine-<br>wave superimposed on rated load|IFSM|420|A|
|Junction temperature|TJ|- 55 to +175|°C|
|Storage temperature|TSTG|- 55 to +175|°C|



1 Version: A2601 

**TSAD35H120H** TAIWANSEMICONDUCTOR(jig Taiwan Semiconductor 

|THERMAL PERFORMANCE|THERMAL PERFORMANCE|THERMAL PERFORMANCE|THERMAL PERFORMANCE|
|---|---|---|---|
|PARAMETER|SYMBOL|TYP|UNIT|
|Junction-to-mount thermal resistance|RӨJM|0.7|°C/W|



**Thermal Performance Note:** With ideal heat sink 

## ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) 

|ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)|
|---|---|---|---|---|---|
|PARAMETER|CONDITIONS|SYMBOL|TYP|MAX|UNIT|
|Forward voltage(1)|IF= 17.5A, TJ= 25°C|VF|0.75|-|V|
||IF= 35A, TJ= 25°C||0.82|0.89|V|
||IF= 17.5A, TJ= 125°C||0.62|-|V|
||IF= 35A, TJ= 125°C||0.73|0.79|V|
|Reverse current @ rated VR(2)|TJ= 25°C|IR|-|30|μA|
||TJ= 125°C||-|8|mA|
|Junction capacitance|1MHz, VR= 4.0V|CJ|982|-|pF|



**Notes:** 

1. Pulse test with PW = 0.3ms 

2. Pulse test with PW = 30ms 

|ORDERING INFORMATION|ORDERING INFORMATION|ORDERING INFORMATION|
|---|---|---|
|ORDERING CODE|PACKAGE|PACKING|
|TSAD35H120H|ThinDPAK|4,500 / Tape & Reel|



2 Version: A2601 

**TSAD35H120H** Tn Taiwan Semiconductor 

## CHARACTERISTICS CURVES 

(TA = 25°C unless otherwise noted) 

## **Fig.1 Forward Current Derating Curve** 

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40<br>35<br>30 Pot PP \<br>25<br>ee en<br>20<br>| fof of tt<br>15 Po YS<br>10 P| | | YT<br>5 a<br>0 ee eee<br>0 25 50 75 100 125 150 175<br>MOUNT TEMPERATURE (°C)<br>AVERAGE FORWARD CURRENT (A)<br>**----- End of picture text -----**<br>


## **Fig.3 Typical Reverse Characteristics** 

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100000<br>TJ=175 ° C<br>10000<br>ee<br>1000<br>100 TJ=125 ° C TJ=150 ° C<br>==s5r Sane<br>10<br>==<br>1 ee<br>0.1 Ln TJ=25 ° C |_|——<br>0.01<br>10 20 30 40 50 60 70 80 90 100<br>**----- End of picture text -----**<br>


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PERCENT OF RATED PEAK REVERSE VOLTAGE (%)<br>**----- End of picture text -----**<br>


## **Fig.2 Typical Junction Capacitance** 

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10000<br>EEEPt TAee eee<br>et<br>1000<br>he<br>=eeee<br>eePtee EA TNE<br>f=1.0MHz Ct SSS<br>100 Vsig=50mVp-p a Ml<br>0.1 1 10 100<br>REVERSE VOLTAGE (V)<br>CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


## **Fig.4 Typical Forward Characteristics** 

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100<br>TJ=175 ° C<br>a TJ=150 ° C Nt. a Aa<br>10<br>TJ=125 ° C<br>S G TJ=25 ° C<br>1<br>D/L [R |<br>| Sff sf £ TJ=-55 ° C<br>Pulse width 300μs<br>s/o ae 1% duty cycle<br>0.1<br>0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9<br>FORWARD VOLTAGE (V)<br>INSTANTANEOUS FORWARD CURRENT (A)<br>**----- End of picture text -----**<br>


**Fig.5 Typical Forward Power Dissipation vs.** 

**Forward Current** 

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24<br>SER,<br>22 SERRE δ = 1 LLct<br>20 S ERUUSEEEUSEEEUSEEEESEEEORERMEESERRE J||||<br>SERREee<br>1816 DeeBERRSERREPPP RRRRee”AneeeeeeAeAe<br>14 Po δ = 0.5 TTT ELA<br>Piet A<br>1210 PPEPtPittyTTTeT TTT TTT δ = 0.2 Ty eettySanny 40”et26?4608a00a”|4G TJ=175 ° C |[|[||<br>8 Dneeeeeenney?000nnnHin dil T<br>6 [|A δ = 0.1 Dp”Annan<br>4 SERED<br>ERaED ~4g> Annee<br>2 ap”geosen tp/T tp<br>0 Mii titi titi titi ti tt<br>0 5 10 15 20 25 30 35<br>FORWARD CURRENT (A)<br>POWER DISSIPATION (W)<br>**----- End of picture text -----**<br>


3 Version: A2601 

**TSAD35H120H** TAIWANSEMICONDUCTOR[lage Taiwan Semiconductor 

## CHARACTERISTICS CURVES 

(TA = 25°C unless otherwise noted) 

## **Fig.6 Typical Transient Thermal Characteristics** 

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10<br>1<br>0.1<br>0.01<br>0.001<br>0.0001 PT TT PEEPPT<br>1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00<br>TRANSIENT THERMAL IMPEDANCE (°C/W)<br>**----- End of picture text -----**<br>


PULSE DURATION (s) 

4 Version: A2601 

TAIWANGM O*VDAKR NR EE————EEEuwuw **TSAD35H120H** as Taiwan Semiconductor 

## PACKAGE OUTLINE DIMENSIONS 

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ThinDPAK<br>**----- End of picture text -----**<br>


YWWF T35120 1 2 MARKING DIAGRAM YWW = DATE CODE F = FACTORY CODE 

5 Version: A2601 

**TSAD35H120H** (jig Taiwan Semiconductor 

SEMICONDUCTOR(jig 

## Notice 

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. 

Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. 

Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. 

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 

6 Version: A2601