TQM250NB06DCR RLG

**TQM250NB06DCR** TAIWANSEMICONDUCTOR[ig Taiwan Semiconductor 

## **AUTOMOTIVE Dual N-Channel 60V 175°C MOSFET** 

## FEATURES 

- AEC-Q101 Qualified 

- 100% UIS and Rg Tested 

- 175°C Operating Junction Temperature 

- Wettable Flank Package 

- RoHS Compliant 

- Halogen-free according to IEC 61249-2-21 

|PRODUCT SUMMARY|PRODUCT SUMMARY|PRODUCT SUMMARY|PRODUCT SUMMARY|
|---|---|---|---|
|PARAMETER||VALUE|UNIT|
|VDS||60|V|
|RDS(on)(max)|VGS= 10V|25|mΩ|
||VGS= 7V|31.6||
|Qg||24|nC|



## APPLICATIONS 

- 12V Automotive Systems 

- Solenoid and Motor Control 

- Automotive Transmission Control 

- DC-DC Converters 

## **PDFN56U Dual** 

**Note:** MSL 1 (Moisture Sensitivity Level) per J-STD-020 

|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|
|---|---|---|---|---|
|PARAMETER||SYMBOL|LIMIT|UNIT|
|Drain-Source Voltage||VDS|60|V|
|Gate-Source Voltage||VGS|±20|V|
|Continuous Drain Current**(Note 1)**|TC= 25°C|ID|30|A|
||TA= 25°C||6||
|Pulsed Drain Current||IDM|120|A|
|Single Pulse Avalanche Current **(Note 2)**||IAS|15|A|
|Single Pulse Avalanche Energy **(Note 2)**||EAS|34|mJ|
|Total Power Dissipation|TC= 25°C|PD|58|W|
||TC= 125°C||19||
|Total Power Dissipation|TA= 25°C|PD|2.5|W|
||TA= 125°C||0.8||
|OperatingJunction and Storage Temperature Range||TJ, TSTG|- 55 to +175|°C|



|THERMAL RESISTANCE|THERMAL RESISTANCE|THERMAL RESISTANCE|THERMAL RESISTANCE|
|---|---|---|---|
|PARAMETER|SYMBOL|MAXIMUM|UNIT|
|Thermal Resistance – Junction to Case|RӨJC|2.6|°C/W|
|Thermal Resistance – Junction to Ambient|RӨJA|61|°C/W|



**Thermal Performance Note:** RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. RӨJC is guaranteed by design while RӨCA is determined by the user’s board design. The RӨJA limit presented here is based on mounting on a 1 in[2] pad of 2 oz copper. 

1 Version: A2006 

% SEMICONDUCTOR(i **TQM250NB06DCR** Taiwan Semiconductor 

|ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted)<br>~~a~~|
|---|---|---|---|---|---|---|
|PARAMETER<br>~~po~~|CONDITIONS<br>~~po~~|SYMBOL<br>~~po~~|MIN<br>~~po~~|TYP<br>~~po~~|MAX<br>~~po~~|UNIT<br>~~po~~|
|**Static**<br>~~a~~<br>~~po~~|||||||
|Drain-Source Breakdown Voltage<br>~~po~~<br>~~po~~|VGS= 0V, ID= 250µA|BVDSS|60|--|--|V|
|Gate Threshold Voltage<br>~~po~~<br>~~po~~<br>~~po~~|VGS= VDS, ID= 250µA|VGS(TH)|1.8|2.6|3.8|V|
|Gate-Source Leakage Current<br>~~po~~<br>~~po~~|VGS= ±20V, VDS= 0V|IGSS|--|--|±100|nA|
|Drain-Source Leakage Current<br>~~po~~|VGS= 0V, VDS= 60V|IDSS|--|--|1|µA|
||VGS= 0V, VDS= 60V<br>TJ = 125°C||--|--|100||
||VGS= 0V, VDS= 60V<br>TJ = 175°C||--|--|500||
|Drain-Source On-State Resistance <br>**(Note 3)**|VGS= 10V, ID= 6A|RDS(on)<br>~~|~~|--|21|25|mΩ|
||VGS= 10V, ID= 6A,<br>TJ= 125°C||--|42|50||
||VGS= 10V, ID= 6A,<br>TJ= 175°C<br>~~|~~||--<br>~~|~~|55<br>|65<br>||
||VGS= 7V, ID= 5A<br>~~|~~||--<br>~~|fT~~|22<br>~~fT~~|31.6<br>~~fT~~||
|Forward Transconductance**(Note 3)**<br>~~po~~|VDS= 10V, ID= 6A<br>~~|~~<br>~~po~~|gfs<br>~~|~~<br>~~po~~|--<br>~~|~~<br>~~po~~|27<br><br>~~po~~|--<br><br>~~po~~|S<br>~~po~~|
|**Dynamic (Note 4)**<br>~~a~~|||||||
|Total Gate Charge<br>~~a~~|VGS= 10V, VDS= 30V,<br>ID= 6A|Qg<br>~~**e**e~~|--<br>~~**e**~~|24<br>~~**e**e~~|--<br>~~e~~|nC|
|Total Gate Charge<br>~~a~~|VGS= 7V, VDS= 30V,<br>ID= 5A|Qg<br>~~**e**e~~|--<br>~~**e**~~|18<br>~~**e**e~~|--<br>~~e~~||
|Gate-Source Charge<br>~~a~~||Qgs<br>~~**e**e ~~|--<br> ~~**e**~~|6<br>~~**e**e~~|--<br>~~e~~||
|Gate-Drain Charge<br>~~a~~||Qgd<br>~~ee~~|--<br>~~ee~~|6<br>~~ee~~|--<br>~~ee~~||
|Input Capacitance<br>~~a~~|VGS= 0V, VDS= 30V,<br>f = 1.0MHz|Ciss<br>~~ee~~|--<br>~~ee~~|1398<br>~~ee~~|--<br>~~ee~~|pF|
|Output Capacitance<br>~~a~~||Coss<br>~~ee~~|--<br>~~ee~~|89<br>~~ee~~|--<br>~~ee~~||
|Reverse Transfer Capacitance<br>~~a~~||Crss<br>~~ee~~|--<br>~~ee~~|26<br>~~ee~~|--<br>~~ee~~||
|Gate Resistance<br>~~GD~~|f = 1.0MHz<br>~~GD~~|Rg<br>~~GD~~|0.7<br>~~GD~~|2.3<br>~~GD~~|4.6<br>~~GD~~|Ω<br>~~GD~~|
|**Switching (Note 4)**<br>~~eeeeeeeeeeepDRDUNDnn'—__~~<br>~~ee~~<br>~~ee~~<br>~~eeee~~<br>~~oo~~|||||||
|Turn-On Delay Time<br>~~ee~~<br>~~oo~~<br>~~ee~~|VGS= 10V, VDS= 30V,<br>ID= 6A, RG= 2Ω<br>~~ee~~<br>~~ee~~<br>~~oT~~|td(on)<br>~~ee~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~|4<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~|ns|
|Rise Time<br>~~ee~~<br>~~oo~~<br>~~ee~~<br>~~oT~~||tr<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|20<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|Turn-Off Delay Time<br>~~oo~~<br>~~ee~~<br>~~oT~~||td(off)<br>~~ee~~|--<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|14<br> ~~ee~~<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|Fall Time<br>~~ee~~<br>~~oT~~||tf<br>~~pT~~|--<br>~~ee~~<br>~~ee~~<br>~~pT~~|19<br>~~ee~~<br>~~pT~~|--<br>~~ee~~<br>~~pT~~||
|**Source-Drain Diode **<br>~~ee ee~~<br>~~oT~~<br>~~a~~|||||||
|Diode Forward Voltage**(Note 3)**<br>~~po~~<br>~~eee~~|VGS = 0V,IS = 6A<br>~~po~~<br>~~ee~~|VSD<br>~~po~~<br>~~ee~~|--<br>~~po~~<br>~~ee~~|--<br>~~po~~<br>~~ee~~|1.2<br>~~po~~<br>~~ee~~|V<br>~~po~~|
|Reverse Recovery Time<br>~~ee~~<br>~~eee~~|IS= 6A,<br>di/dt = 100A/μs<br>~~ee~~<br>~~ee~~|trr<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~|18<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~|
|Reverse Recovery Charge<br>~~ee~~<br>~~eee~~||Qrr<br>~~ee~~<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~|14<br>~~ee~~<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~|nC<br>~~ee~~<br>~~ee~~|



## 1. Silicon limited current only. 

2. L = 0.3mH, VGS = 10V, VDD = 30V, RG = 50Ω, IAS = 15A, Starting TJ = 25°C 

3. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%. 

4. Switching time is essentially independent of operating temperature. 

2 Version: A2006 

**TQM250NB06DCR** TAIWANSEMICONDUCTOR(i Taiwan Semiconductor 

## ORDERING INFORMATION 

|ORDERING CODE|PACKAGE|PACKING|
|---|---|---|
|TQM250NB06DCR RLG|PDFN56U Dual|2,500pcs / 13” Reel|



3 Version: A2006 

comm **TQM250NB06DCR** Taiwan Semiconductor 

## CHARACTERISTICS CURVES 

(TA = 25°C unless otherwise noted) 

**Output Characteristics** 

**Transfer Characteristics** 

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40<br>32<br>eee<br>24<br>25 ℃<br>16 SoeCOWCOW<br>175 ℃ -55 ℃<br>8<br>eee<br>Oo<br>0<br>0 1 2 3 4 5 6<br>VGS, Gate to Source Voltage (V) GS, Gate to Source Voltage (V) , Gate to Source Voltage (V)<br>, Drain Current (A)<br>IDD<br>**----- End of picture text -----**<br>


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40 40<br>32 32<br>7/4 eee<br>VGS=10V<br>VGS=7V<br>24 VGS=6V  24<br>VGS=5V<br>VGS=4.5V  25 ℃<br>16 faTx 16 SoeCOWCOW<br>175 ℃ -55 ℃<br>8 VGS=4V  8<br>( A eee<br>b P Oo<br>0 0<br>0 1 2 3 4 0 1 2 3 4 5<br>VDS, Drain to Source Voltage (V)  VGS, Gate to Source Voltage (V) GS, Gate to Source Voltage (V) , Gate to Source Voltage (V)<br>            On-Resistance vs. Drain Current          Gate-Source Voltage  vs. Gate Charge<br>0.04 10<br>VDS=30V DS=30V =30V<br>0.035 TTTT] 8 Cory ID=6A D=6A =6A<br>0.03<br>6<br>0.025 Pee VGS=7V<br>4<br>0.02 e S<br>VGS=10V<br>2<br>0.015 =e, too) 6LALL<br>0.01 fF | | 0 Jiii | tl<br>0 8 16 24 32 40 0 5 10 15 20<br>ID, Drain Current (A)  Qg, Gate Charge (nC) g, Gate Charge (nC) , Gate Charge (nC)<br>, Drain Current (A)  , Drain Current (A)<br>ID IDD<br>)<br>, Gate to Source Voltage (V)<br>, Drain-Source On-Resistance (Ω<br>GS<br>V<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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10<br>VDS=30V DS=30V =30V<br>ID=6A D=6A =6A<br>8 Cory<br>6<br>4<br>2<br>6LALL<br>0 Jiii | tl<br>0 5 10 15 20 25<br>Qg, Gate Charge (nC) g, Gate Charge (nC) , Gate Charge (nC)<br>  On-Resistance vs. Gate-Source Voltage<br>0.06<br>0.05<br>0.04<br>0.03<br>0.02<br>ID=6A D=6A =6A<br>0.01<br>0<br>4 5 6 7 8 9 10<br>, Gate to Source Voltage (V)<br>GS<br>V<br>, Drain-Source On-Resistance (Ω)<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


## **On-Resistance vs. Junction Temperature** 

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3<br>VGS=10V<br>2.5 ID=6A<br>2 SAJEEEEEEDTo<br>CCE<br>1.5<br>1 CCE<br>CCRT<br>0.5<br>PCC<br>0<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ, Junction Temperature (°C)<br>(Normalized)<br>, Drain-Source On-Resistance<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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0.06<br>0.05<br>0.04<br>0.03<br>0.02<br>ID=6A D=6A =6A<br>0.01<br>0<br>4 5 6 7 8 9 10<br>VGS, Gate to Source Voltage (V)<br>**----- End of picture text -----**<br>


4 Version: A2006 

**TQM250NB06DCR** TAIWANSEMICONDUCTOR (ygppeeeee Taiwan Semiconductor 

## CHARACTERISTICS CURVES 

(TA = 25°C unless otherwise noted) 

## **Capacitance vs. Drain-Source Voltage** 

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2000<br>1800<br>1600<br>A | [| | fl |<br>1400 pt Ciss<br>TT |<br>1200 FS<br>1000 Pot tT ET<br>800<br>600<br>400 | | Crss  | CTT<br>fo} |<br>200 KF ft [tT] Coss<br>SS<br>0<br>0 10 20 30 40 50 60<br>VDS, Drain to Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


## **BVDSS vs. Junction Temperature** 

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1.2<br>ID=2mA<br>1.1 UT<br>|<br>ra<br>1 AO<br>0.9 |<br>0.8<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ, Junction Temperature (°C)<br> (Normalized)<br>DSS<br>BV<br>Drain-Source Breakdown Voltage<br>**----- End of picture text -----**<br>


## **Maximum Safe Operating Area, Junction-to-Case** 

**Source-Drain Diode Forward Current vs. Voltage** 

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**----- Start of picture text -----**<br>
1000 100<br>100<br>R<br>EE DS(on) | 10 S$SAA<br>10 | ENO, LU FFEfEf<br>175 ℃ 25 ℃ -55 ℃<br>1<br>SE ee SOT if|<br>1 SINGLE PULSE RӨJC=2.6 ° C/W  tl | SS | /if<br>TC=25 ° C  YT TTT tT TTT ]<br>0.1 CA EE 0.1 a<br>0.1 1 10 100 0.2 0.4 0.6 0.8 1<br>VDS, Drain to Source Voltage (V)   VSD, Body Diode Forward Voltage (V) SD, Body Diode Forward Voltage (V) , Body Diode Forward Voltage (V)<br>Normalized Thermal Transient Impedance, Junction-to-Case<br>10<br>SINGLE PULSE<br>RӨJC=2.6 ° C/W<br>SSF<br>Po | [|]<br>1 ee<br>—ee > — 2 Duty=0.5 Duty=0.2  LTT 7 ||<br>0.1 Duty=0.1<br>PT Duty=0.05  afr<br>Duty=0.02  Notes:<br>Duty=0.01  Duty = t1 / t2<br>a ee ee eee Single  TTT TJ = TC + PDM x ZӨJC x RӨJC ||<br>0.01 | ET ETT LLL |<br>0.0001 0.001 0.01 0.1<br>t, Square Wave Pulse Duration (sec)<br>, Drain Current (A)<br>ID<br>, Reverse Drain Current (A)<br>ISS<br>ӨJC<br>Thermal Impedance, Z<br>Normalized Effective Transient<br>**----- End of picture text -----**<br>


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100<br>10 S$SAA<br>FFEfEf<br>175 ℃ 25 ℃ -55 ℃<br>1<br>if| /if |__|<br>SS<br>]<br>0.1 a<br>0.2 0.4 0.6 0.8 1 1.2<br>, Reverse Drain Current (A)<br>ISS<br>**----- End of picture text -----**<br>


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VSD, Body Diode Forward Voltage (V) SD, Body Diode Forward Voltage (V) , Body Diode Forward Voltage (V)<br>**----- End of picture text -----**<br>


5 Version: A2006 

**TQM250NB06DCR** TAIWANSEMICONDUCTOR[pgp Taiwan Semiconductor 

## PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) 

**PDFN56U Dual** 

## SUGGESTED PAD LAYOUT (Unit: Millimeters) 

## MARKING DIAGRAM 

TSC 250NB06D YWWLF 

**Y** = Year Code **WW** = Week Code (01~52) **L** = Lot Code (1~9,A~Z) **F** = Factory Code 

= AEC-Q101 Qualified 

**_** 

6 Version: A2006 

**TQM250NB06DCR** TAIWANSEMICONDUCTOR(i Taiwan Semiconductor 

## Notice 

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. 

Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. 

Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. 

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 

7 Version: A2006