TQM110NB04CR RLG

**TQM110NB04CR** = SenconoueronSEMICONDUCTOR(lau Taiwan Semiconductor 

## **AUTOMOTIVE N-Channel 40V 175°C MOSFET** 

## FEATURES 

- AEC-Q101 Qualified 

- 100% UIS and Rg Tested 

- 175°C Operating Junction Temperature 

- Wettable Flank Package 

- RoHS Compliant 

- Halogen-free according to IEC 61249-2-21 

|PRODUCT SUMMARY|PRODUCT SUMMARY|PRODUCT SUMMARY|PRODUCT SUMMARY|
|---|---|---|---|
|PARAMETER||VALUE|UNIT|
|VDS||40|V|
|RDS(on)(max)|VGS= 10V|11|mΩ|
||VGS= 7V|17.2||
|Qg||25|nC|



## APPLICATIONS 

- 12V Automotive Systems 

- Solenoid and Motor Control 

- Automotive Transmission Control 

- DC-DC Converters 

## **PDFN56U** 

**==> picture [56 x 38] intentionally omitted <==**

**----- Start of picture text -----**<br>
:<br><><br>**----- End of picture text -----**<br>


**Note:** MSL 1 (Moisture Sensitivity Level) per J-STD-020 

|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|
|---|---|---|---|---|
|PARAMETER||SYMBOL|LIMIT|UNIT|
|Drain-Source Voltage||VDS|40|V|
|Gate-Source Voltage||VGS|±20|V|
|Continuous Drain Current**(Note 1)**|TC= 25°C|ID|54|A|
||TA= 25°C||12||
|Pulsed Drain Current||IDM|216|A|
|Single Pulse Avalanche Current **(Note 2)**||IAS|17|A|
|Single Pulse Avalanche Energy **(Note 2)**<br>~~en~~<br>~~|~~||EAS<br>~~Oe~~|43<br>~~ee~~|mJ|
|Total Power Dissipation<br>~~ee~~<br>~~|~~|TC= 25°C<br>~~ee~~<br>~~en~~<br>~~|~~|PD<br>~~ee~~<br>~~Oe~~<br>~~|~~<br>~~ee~~|68<br>~~ee~~<br>~~ee~~<br>~~|~~|W<br>~~ee~~|
||TC= 125°C<br>~~ee~~<br>~~en~~<br>~~|~~<br>~~es~~||23<br>~~ee~~<br>~~ee~~<br>~~|~~<br>~~eee~~||
|Total Power Dissipation<br>~~|~~<br>~~ee~~|TA= 25°C<br>~~en ~~<br>~~|~~<br>~~ee~~<br>~~es~~|PD<br> ~~Oe ~~<br>~~|~~<br>~~ee~~<br>~~ee~~|3.1<br> ~~ee~~<br>~~|~~<br>~~ee~~<br>~~eee~~|W<br>~~ee~~|
||TA= 125°C<br>~~ee~~<br>~~es~~||1<br>~~ee~~<br>~~eee~~||
|OperatingJunction and Storage Temperature Range<br>~~es ~~<br>~~a~~||TJ, TSTG<br> ~~ee ~~<br>~~a~~|- 55 to +175<br> ~~eee~~<br>~~a~~|°C<br>~~a~~|



|THERMAL RESISTANCE|THERMAL RESISTANCE|THERMAL RESISTANCE|THERMAL RESISTANCE|
|---|---|---|---|
|PARAMETER|SYMBOL|MAXIMUM|UNIT|
|Thermal Resistance – Junction to Case|RӨJC|2.2|°C/W|
|Thermal Resistance – Junction to Ambient|RӨJA|48|°C/W|



**Thermal Performance Note:** RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. RӨJC is guaranteed by design while RӨCA is determined by the user’s board design. The RӨJA limit presented here is based on mounting on a 1 in[2] pad of 2 oz copper. 

1 Version: A2006 

% SEMICONDUCTOR(i **TQM110NB04CR** Taiwan Semiconductor 

|ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted)<br>~~a~~|
|---|---|---|---|---|---|---|
|PARAMETER<br>~~po~~|CONDITIONS<br>~~po~~|SYMBOL<br>~~po~~|MIN<br>~~po~~|TYP<br>~~po~~|MAX<br>~~po~~|UNIT<br>~~po~~|
|**Static**<br>~~a~~<br>~~po~~|||||||
|Drain-Source Breakdown Voltage<br>~~po~~<br>~~po~~|VGS= 0V, ID= 250µA|BVDSS|40|--|--|V|
|Gate Threshold Voltage<br>~~po~~<br>~~po~~<br>~~po~~|VGS= VDS, ID= 250µA|VGS(TH)|1.8|2.4|3.8|V|
|Gate-Source Leakage Current<br>~~po~~<br>~~po~~|VGS= ±20V, VDS= 0V|IGSS|--|--|±100|nA|
|Drain-Source Leakage Current<br>~~po~~|VGS= 0V, VDS= 40V|IDSS|--|--|1|µA|
||VGS= 0V, VDS= 40V<br>TJ = 125°C||--|--|100||
||VGS= 0V, VDS= 40V<br>TJ = 175°C||--|--|500||
|Drain-Source On-State Resistance <br>**(Note 3)**|VGS= 10V, ID= 12A|RDS(on)<br>~~|~~|--|7.2|11|mΩ|
||VGS= 10V, ID= 12A,<br>TJ= 125°C||--|12.2|18.7||
||VGS= 10V, ID= 12A,<br>TJ= 175°C<br>~~|~~||--<br>~~|~~|15.1<br>|23.1<br>||
||VGS= 7V, ID= 9A<br>~~|~~||--<br>~~|fT~~|9<br>~~fT~~|17.2<br>~~fT~~||
|Forward Transconductance**(Note 3)**<br>~~po~~|VDS= 10V, ID= 12A<br>~~|~~<br>~~po~~|gfs<br>~~|~~<br>~~po~~|--<br>~~|~~<br>~~po~~|39<br><br>~~po~~|--<br><br>~~po~~|S<br>~~po~~|
|**Dynamic (Note 4)**<br>~~a~~|||||||
|Total Gate Charge<br>~~a~~|VGS= 10V, VDS= 20V,<br>ID= 12A|Qg<br>~~**e**e~~|--<br>~~**e**~~|25<br>~~**e**e~~|--<br>~~e~~|nC|
|Total Gate Charge<br>~~a~~|VGS= 7V, VDS= 20V,<br>ID= 9A|Qg<br>~~**e**e~~|--<br>~~**e**~~|18<br>~~**e**e~~|--<br>~~e~~||
|Gate-Source Charge<br>~~a~~||Qgs<br>~~**e**e ~~|--<br> ~~**e**~~|5<br>~~**e**e~~|--<br>~~e~~||
|Gate-Drain Charge<br>~~a~~||Qgd<br>~~ee~~|--<br>~~ee~~|7<br>~~ee~~|--<br>~~ee~~||
|Input Capacitance<br>~~a~~|VGS= 0V, VDS= 20V,<br>f = 1.0MHz|Ciss<br>~~ee~~|--<br>~~ee~~|1352<br>~~ee~~|--<br>~~ee~~|pF|
|Output Capacitance<br>~~a~~||Coss<br>~~ee~~|--<br>~~ee~~|154<br>~~ee~~|--<br>~~ee~~||
|Reverse Transfer Capacitance<br>~~a~~||Crss<br>~~ee~~|--<br>~~ee~~|94<br>~~ee~~|--<br>~~ee~~||
|Gate Resistance<br>~~GD~~|f = 1.0MHz<br>~~GD~~|Rg<br>~~GD~~|0.7<br>~~GD~~|2.2<br>~~GD~~|4.4<br>~~GD~~|Ω<br>~~GD~~|
|**Switching (Note 4)**<br>~~eeeeeeeeeeepDRDUNDnn'—__~~<br>~~ee~~<br>~~ee~~<br>~~eeee~~<br>~~oo~~|||||||
|Turn-On Delay Time<br>~~ee~~<br>~~oo~~<br>~~ee~~|VGS= 10V, VDS= 20V,<br>ID= 12A, RG= 2Ω<br>~~ee~~<br>~~ee~~<br>~~oT~~|td(on)<br>~~ee~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~|4<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~|ns|
|Rise Time<br>~~ee~~<br>~~oo~~<br>~~ee~~<br>~~oT~~||tr<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|22<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|Turn-Off Delay Time<br>~~oo~~<br>~~ee~~<br>~~oT~~||td(off)<br>~~ee~~|--<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|15<br> ~~ee~~<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|Fall Time<br>~~ee~~<br>~~oT~~||tf<br>~~pT~~|--<br>~~ee~~<br>~~ee~~<br>~~pT~~|19<br>~~ee~~<br>~~pT~~|--<br>~~ee~~<br>~~pT~~||
|**Source-Drain Diode **<br>~~ee ee~~<br>~~oT~~<br>~~a~~|||||||
|Diode Forward Voltage**(Note 3)**<br>~~po~~<br>~~eee~~|VGS = 0V,IS = 12A<br>~~po~~<br>~~ee~~|VSD<br>~~po~~<br>~~ee~~|--<br>~~po~~<br>~~ee~~|--<br>~~po~~<br>~~ee~~|1.2<br>~~po~~<br>~~ee~~|V<br>~~po~~|
|Reverse Recovery Time<br>~~ee~~<br>~~eee~~|IS= 12A,<br>di/dt = 100A/μs<br>~~ee~~<br>~~ee~~|trr<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~|16<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~|
|Reverse Recovery Charge<br>~~ee~~<br>~~eee~~||Qrr<br>~~ee~~<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~|8<br>~~ee~~<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~|nC<br>~~ee~~<br>~~ee~~|



1. Silicon limited current only. 

2. L = 0.3mH, VGS = 10V, VDD = 25V, RG = 50Ω, IAS = 17A, Starting TJ = 25°C 

3. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%. 

4. Switching time is essentially independent of operating temperature. 

2 Version: A2006 

**TQM110NB04CR** TAIWANSEMICONDUCTOR(i Taiwan Semiconductor 

## ORDERING INFORMATION 

|ORDERING CODE|PACKAGE|PACKING|
|---|---|---|
|TQM110NB04CR RLG|PDFN56U|2,500pcs / 13” Reel|



3 Version: A2006 

**TQM110NB04CR** a4[—272_____________] Taiwan Semiconductor 

## CHARACTERISTICS CURVES 

(TA = 25°C unless otherwise noted) 

**==> picture [492 x 635] intentionally omitted <==**

**----- Start of picture text -----**<br>
        Output Characteristics         Transfer Characteristics<br>50 50<br>40 40<br>VLA VGS=10V  mn<br>VGS=7V<br>30 [EZ VVGSGS=6V =5V  30 aae/2<br>VGS=4.5V  25 ℃<br>20 Va 20 es<br>-55 ℃<br>10 10<br>Ve TE<br>175 ℃<br>0 Peet 0 EELEE<br>0 1 2 3 4 0 1 2 3 4 5<br>VDS, Drain to Source Voltage (V)  VGS, Gate to Source Voltage (V)<br>            On-Resistance vs. Drain Current          Gate-Source Voltage  vs. Gate Charge<br>0.015 10<br>VDS=20V<br>0.012 8 ID=12A<br>VGS=7V<br>r e<br>0.009 6<br>aa<br>0.006 VGS=10V  4 naa<br>0.003 2 a<br>0 0 Anna<br>0 10 20 30 40 50 0 5 10 15 20 25<br>ID, Drain Current (A)  Qg, Gate Charge (nC)<br>On-Resistance vs. Junction Temperature     On-Resistance vs. Gate-Source Voltage<br>2.5 0.04<br>VGS=10V  0.035<br>2 ID=12A  Ly yy td {Tt | | | |<br>0.03<br>PEE 0.025 HEE EEE<br>1.5<br>0.02<br>1<br>EATTA, 0.015 RARER<br>ID=12A<br>0.01<br>0.5<br>eT )=—r 0.005<br>0 PAPA) 0 EERE HEE<br>-75 -50 -25 0 25 50 75 100 125 150 175 4 5 6 7 8 9 10<br>TJ, Junction Temperature (°C)  VGS, Gate to Source Voltage (V)<br>, Drain Current (A)  , Drain Current (A)<br>ID ID<br>)<br>, Gate to Source Voltage (V)<br>, Drain-Source On-Resistance (Ω<br>GS<br>V<br>DS(on)<br>R<br>(Normalized)<br>, Drain-Source On-Resistance<br>DS(on) , Drain-Source On-Resistance (Ω)<br>R DS(on)<br>R<br>**----- End of picture text -----**<br>


4 Version: A2006 

= SEMICONDUCTOR (ygppeeeee **TQM110NB04CR** Taiwan Semiconductor 

## CHARACTERISTICS CURVES 

(TA = 25°C unless otherwise noted) 

**==> picture [493 x 627] intentionally omitted <==**

**----- Start of picture text -----**<br>
       Capacitance vs. Drain-Source Voltage          BVDSS vs. Junction Temperature<br>2000 1.2<br>1800 ID=2mA<br>1600<br>1400 a a ee Ciss  1.1 —<br>I wa —<br>1200<br>1000 Oee ee ee ee e 1 A<br>800<br>600<br>ae ee ee 0.9 a<br>400 A a es ee<br>200 Coss<br>0 _———————Se Crss  0.8 ee<br>0 10 20 30 40 -75 -50 -25 0 25 50 75 100 125 150 175<br>VDS, Drain to Source Voltage (V)   TJ, Junction Temperature (°C)<br>  Maximum Safe Operating Area, Junction-to-Case  Source-Drain Diode Forward Current vs. Voltage<br>1000 100<br>ee rs ee ee ee oe ee<br>R<br>100 DS(on) 10<br>Magy 7A A ey ae<br>|JA<br>175 ℃ 25 ℃ -55 ℃<br>10 Ze INSSss TT 1 rreeee 0 e e e ee 2 e ee eee<br>SINGLE PULSE<br>RӨJC=2.2 ° C/W<br>TC=25 ° C  CT INT ee ee 2 ee 2 | ee ee<br>1 ELUNE LUI 0.1 ee ee<br>0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2<br>VDS, Drain to Source Voltage (V)   VSD, Body Diode Forward Voltage (V)<br>Normalized Thermal Transient Impedance, Junction-to-Case<br>10<br>SINGLE PULSE<br>a ee ee ee ee ee ee eee RӨJC=2.2 ° C/W |<br>S S<br>1 a<br>pT<br>—ee ee 2S Duty=0.5 Duty=0.2  Lt tt |<br>0.1 Duty=0.1<br>Se Duty=0.05  Se oar<br>Duty=0.02  Notes:<br>Duty=0.01  Duty = t1 / t2<br>Single  TJ = TC + PDM x ZӨJC x RӨJC<br>0.01 a ee el | LLL i<br>0.0001 0.001 0.01 0.1<br>t, Square Wave Pulse Duration (sec)<br> (Normalized)<br>DSS<br>C, Capacitance (pF)   BV<br>Drain-Source Breakdown Voltage<br>, Drain Current (A)<br>ID<br>, Reverse Drain Current (A)<br>IS<br>ӨJC<br>Thermal Impedance, Z<br>Normalized Effective Transient<br>**----- End of picture text -----**<br>


## **Source-Drain Diode Forward Current vs. Voltage** 

5 Version: A2006 

**TQM110NB04CR** TTT Taiwan Semiconductor 

## PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) 

**PDFN56U** 

## SUGGESTED PAD LAYOUT (Unit: Millimeters) 

## MARKING DIAGRAM 

TSC 110NB04 YWWLF 

**Y** = Year Code **WW** = Week Code (01~52) **L** = Lot Code (1~9,A~Z) **F** = Factory Code 

- **_** = AEC-Q101 Qualified 

6 Version: A2006 

**TQM110NB04CR** TAIWANSEMICONDUCTOR(i Taiwan Semiconductor 

## Notice 

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. 

Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. 

Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. 

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 

7 Version: A2006