TP0610T-G

_**Su ertex inc. p**_ 

**TP0610T** 

## **P-Channel Enhancement-Mode Vertical DMOS FET** 

## **Features** 

- High input impedance and high gain 

- Low power drive requirement 

- Ease of paralleling 

- Low CISS and fast switching speeds 

- Excellent thermal stability 

- Integral source-drain diode 

- Free from secondary breakdown 

## **Applications** 

- Logic level interfaces - ideal for TTL and CMOS 

- Solid state relays 

- Battery operated systems 

- Photo voltaic systems 

- Analog switches 

## **General Description** 

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. 

Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. 

- Power management 

- Telecom switches 

**Ordering Information Product Summary Part Number Package Option Packing BV /BV RDS(ON) ID(ON) DSS DGS (max) (min)** TP0610T-G TO-236AB (SOT-23) 3000/Reel _-G denotes a lead (Pb)-free / RoHS compliant package._ -60V 10Ω -50mA ~~eS~~ _Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant._ **Pin Configuration Absolute Maximum Ratings gs s DRAIN Parameter Value** Drain-to-source voltagegee BVDSSDSS Drain-to-gate voltagegate voltageate voltagegee BVDGS DGS **SOURCE** Gate-to-source voltagegee ±20V **GATE** ~~—~~ Operating and storage temperatureperating and storage temperatureerating and storage temperatureg and storage temperature and storage temperaturege temperaturee temperatureperatureerature -55[[O]] C to +150[[O]] C **TO-236AB (SOT-23)** 

**Absolute Maximum Ratings gs s Parameter Value** Drain-to-source voltagegee BVDSSDSS Drain-to-gate voltagegate voltageate voltagegee BVDGS DGS Gate-to-source voltagegee ±20V ~~—~~ Operating and storage temperatureperating and storage temperatureerating and storage temperatureg and storage temperature and storage temperaturege temperaturee temperatureperatureerature -55[[O]] C to +150[[O]] C _Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground._ 

## **Product Marking** 

## **Typical Thermal Resistance Package** _**θja**_ TO-236AB (SOT-23) 203[O] C/W ~~ee~~ 

W = Code for week sealed **T50W** = “Green” Packaging _Package may or may not include the following marks: Si or_ **TO-236AB (SOT-23)** ~~[I~~ o 

_**Supertex inc. www.supertex.com**_ 

_Doc.# DSFP-TP0610T C081313_ 

**TP0610T** 

## **Thermal Characteristics** 

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Package (continuous)ID [†] (pulsed)ID Power Dissipation@TA = 25 [O] C IDR † IDRM<br>TO-236AB (SOT-23) -120mA -400mA 0.36W -120mA -400mA<br>**----- End of picture text -----**<br>


_**Notes:** †  ID (continuous) is limited by max rated Tj ._ 

## **Electrical Characteristics** _(TA = 25°C unless otherwise specified)_ 

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Sym Parameter Min Typ Max Units Conditions<br>BVDSS Drain-to-source breakdown voltage -60 - - V VGS = 0V, ID = -10μA<br>VGS(th) Gate threshold voltage -1.0 - -2.4 V VGS = VDS, ID= -1.0mA<br>∆VGS(th) Change in VGS(th) with temperature - - 6.5 mV/ [O] C VGS = VDS, ID= -1.0mA<br>IGSS Gate body leakage - - ±10 nA VGS = ± 20V, VDS = 0V<br>- -1.0 VGS = 0V, VDS = Max Rating<br>IDSS Zero gate voltage drain current - - -200 μA VDS = 0.8 Max Rating,<br>VGS = 0V, TA = 125°C<br>ID(ON) On-state drain current -50 - - mA VGS = -4.5V, VDS = -10V<br>R Static drain-to-source on-state resistance - - 25 Ω VGS = -4.5V, ID = -25mA<br>DS(ON) - 10 VGS = -10V, ID = -200mA<br>∆RDS(ON) Change in RDS(ON) with temperature - - 1.0 %/ [O] C VGS = -10V, ID = -200mA<br>GFS Forward transconductance 60 - - mmho VDS = -10V, ID = -100mA<br>CISS Input capacitance - - 60 VGS = 0V,<br>COSS Common source output capacitance - - 30 pF VDS = -25V,<br>CRSS Reverse transfer capacitance - - 10 f = 1.0 MHz<br>td(ON) Turn-on delay time - - 10<br>t Rise time - - 15 VDD = -25V,<br>td(OFF)r Turn-off delay time - - 15 ns RID = -180mA,GEN = 25Ω<br>t Fall time - - 20<br>f<br>VSD Diode forward voltage drop - - -2.0 V VGS = 0V, ISD = -120mA<br>trr Reverse recovery time - 400 - ns VGS = 0V, ISD = -400mA<br>**----- End of picture text -----**<br>


_**Notes:**_ 

_1. All D.C. parameters 100% tested at 25[O] C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)_ 

_2. All A.C. parameters sample tested._ 

## **Switching Waveforms and Test Circuit** 

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0V Pulse<br>10%<br>Generator<br>INPUT<br>R<br>-10V 90% GEN<br>t t<br>(ON) (OFF)<br>D.U.T.<br>td(ON) tr td(OFF) tf INPUT<br>OUTPUT<br>0V<br>OUTPUT 90% 90% RL<br>10% 10%<br>VDD<br>VDD<br>**----- End of picture text -----**<br>


_**Supertex inc.**_ 

_Doc.# DSFP-TP0610T C081313_ 

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2 

**TP0610T** 

## **Typical Performance Curves** 

## **On-Resistance vs. Drain Current** 

## **BVDSS Variation with Temperature** 

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15<br>VGS = -5.0V<br>12<br>VGS = -10V<br>9.0<br>6.0<br>3.0<br>0<br>0              -0.8             -1.6             -2.4             -3.2             -4.0<br>ID (amperes)<br>V(th) and RDS Variation with Temperature(th) and RDS Variation with Temperatureand RDS Variation with TemperatureDS Variation with TemperatureVariation with Temperature<br>1.4<br>RDS(ON) @ -10V, -7.5A DS(ON) @ -10V, -7.5A @ -10V, -7.5A<br>1.2<br>1.0<br>V(th) @ -1.0mA (th) @ -1.0mA @ -1.0mA<br>0.8<br>0.6<br>-50                     0                     50                   100                  150<br>Tj (j (( [[O]] C)<br>Gate Drive Dynamic Characteristics<br>-10<br>VDS = -10V DS = -10V = -10V<br>-8.0<br>200 pF<br>-6.0<br>VDS = -40V DS = -40V = -40V<br>-4.0<br>-2.0<br>75 pF<br>0<br>0                0.5              1.0              1.5              2.0              2.5<br>QG (nanocoulombs)G (nanocoulombs)(nanocoulombs)<br>(ohms)<br>DS(ON)<br>R<br>(normalized)<br>GS(th)<br>V<br>(volts)<br>GS<br>V<br>**----- End of picture text -----**<br>


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1.1<br>1.0<br>0.9<br>-50                     0                     50                   100                  150<br>Tj ( [O] C)<br>(normalized)<br>DSS<br>BV<br>**----- End of picture text -----**<br>


## **Transfer Characteristics** 

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Transfer Characteristics V(th) and RDS Variation with Temperature(th) and RDS Variation with Temperatureand RDS Variation with TemperatureDS Variation with TemperatureVariation with Temperature<br>-5.0  2.0<br>VDS = -25V<br>1.4<br>-4.0  1.6<br>RDS(ON) @ -10V, -7.5A DS(ON) @ -10V, -7.5A @ -10V, -7.5A<br>1.2<br>-3.0  1.2<br>TA = -55 [O] C<br>1.0<br>-2.0  0.8<br>25 [O] C  V(th) @ -1.0mA (th) @ -1.0mA @ -1.0mA<br>0.8<br>-1.0  0.4<br>125 [O] C<br>0.6<br>0  0<br>0              -2.0             -4.0             -6.0             -8.0             -10  -50                     0                     50                   100                  150<br>VGS (volts) Tj (j (( [[O]] C)<br>Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics<br>200  -10<br>f = 1MHz<br>VDS = -10V DS = -10V = -10V<br>-8.0<br>150<br>200 pF<br>-6.0<br>100<br>CISS  -4.0  VDS = -40V DS = -40V = -40V<br>50<br>-2.0<br>CRSS  75 pF<br>0  0<br>0                   -10                   -20                   -30                   -40  0                0.5              1.0              1.5              2.0              2.5<br>VDS (volts) QG (nanocoulombs)G (nanocoulombs)(nanocoulombs)<br>COSS<br>(amperes) (normalized) (normalized)<br>ID<br>GS(th)  DS(ON)<br>V R<br>(volts)<br>GS<br>V<br>C (picofarads)<br>**----- End of picture text -----**<br>


_**Supertex inc.**_ 

_Doc.# DSFP-TP0610T C081313_ 

_**www.supertex.com**_ 

3 

**TP0610T** 

## **Typical Performance Curves** _**(cont.)**_ 

## **Output Characteristics** 

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-5.0<br>-4.0<br>-3.0<br>VGS = -10V<br>-9V<br>-2.0<br>-8V<br>-7V<br>-1.0<br>-6V<br>-5V<br>-4V<br>0 0                -10               -20               -30               -40               -50<br>VDS (volts)<br>(ampere)<br>ID<br>**----- End of picture text -----**<br>


## **Transconductance vs. Drain Current** 

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0.6<br>VDS = -25V<br>0.5  TA = -55 [O] C<br>0.4  TA = 25 [O] C<br>0.3<br>TA = -150 [O] C<br>0.2<br>0.1<br>0 0       -0.4       -0.8       -1.2      -1.6      -2.0       -2.4      -2.8       -3.2<br>ID (amperes)<br>(siemens)<br>FS<br>G<br>**----- End of picture text -----**<br>


## **Maximum Rated Safe Operating Area** 

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-10<br>TC = 25 [O] C<br>-1.0<br>TO-92 (DC)<br>-0.1<br>-0.01<br>-1.0                         -10                            -100                        -1000<br>VDS (volts)<br>(amperes)<br>ID<br>**----- End of picture text -----**<br>


## **Saturation Characteristics** 

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-5.0<br>-4.0<br>-3.0<br>VGS = -10V<br>-2.0  -9V<br>-8V<br>-7V<br>-1.0<br>-6V<br>-5V<br>-4V<br>0<br>0                -2.0              -4.0              -6.0              -8.0              -10<br>VDS (volts)<br>(amperes)<br>ID<br>**----- End of picture text -----**<br>


**Power Dissipation vs. Case Temperature** 

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2.0.<br>TO-92<br>1.0<br>0<br>0             25             50             75            100          125           150<br>TC ( [O] C)<br>Thermal Response Characteristics<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2  TO-92<br>PD = 1.0W<br>TC = 25 [O] C<br>0<br>0.001             0.01                   0.1                    1.0                     10<br>tp (seconds)<br>(watts)<br>D<br>P<br>Thermal Resistance (normalized)<br>**----- End of picture text -----**<br>


_**Supertex inc.**_ 

_Doc.# DSFP-TP0610T C081313_ 

_**www.supertex.com**_ 

4 

**TP0610T** 

## **3-Lead TO-236AB (SOT-23) Package Outline (T)** _**2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch**_ 

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D<br>3<br>E1 E<br>Gauge<br>0.25<br>Plane<br>1 2 L Seating<br>Plane<br>e b L1<br>e1<br>Top View View B<br>View B<br>A<br>A2<br>A<br>Seating<br>Plane<br>A1<br>Side View  A View A - A<br>**----- End of picture text -----**<br>


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Symbol A A1 A2 b D E E1 e e1 L L1 θ<br>MIN 0.89 0.01 0.88 0.30 2.80 2.10 1.20 0.20 [†] 0 [O]<br>Dimension 0.95 1.90 0.54<br>NOM - - 0.95 - 2.90 - 1.30 0.50 -<br>(mm) BSC BSC REF<br>MAX 1.12 0.10 1.02 0.50 3.04 2.64 1.40 0.60 8 [O]<br>**----- End of picture text -----**<br>


_JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999. † This dimension differs from the JEDEC drawing._ _**Drawings not to scale.**_ 

_**Supertex Doc.#:** DSPD-3TO236ABK1, Version C041309._ 

_(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.)_ 

_**Supertex inc.**_ does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” _**Supertex inc.**_ does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the _**Supertex inc.**_ (website: http//www.supertex.com) 

©2013 _**Supertex inc.**_ All rights reserved. Unauthorized use or reproduction is prohibited. 

_**Supertex inc.**_ 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 _**www.supertex.com**_ 

_Doc.# DSFP-TP0610T C081313_ 

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