TN2510N8-G
Power MOSFET, N Channel, 100 V, 730 mA, 1 ohm, SOT-89, Surface Mount
- Manufacturer: MICROCHIP
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:730mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Powe
- MSL: -
- SVHC: No SVHC (04-Feb-2026)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 1.6W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: SOT-89
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 730mA
- Drain Source On State Resistance: 1ohm
- Gate Source Threshold Voltage Max: 2V
| Delivery and price | |
|---|---|
| Units per pack | 2000 |
| Price | 0.769 € |
| Current stock | 1000+ |
| Lead time | 30 days |
_**Su ertex inc. p**_ **TN2510** ## **N-Channel Enhancement-Mode** ~~oo~~ **Vertical DMOS FET** ## **Features** - Low threshold (2.0V max.) - High input impedance - Low input capacitance (125pF max.) - Fast switching speeds - Low on-resistance - Free from secondary breakdown - Low input and output leakage ## **Applications** - Logic level interfaces - ideal for TTL and CMOS - Solid state relays - Battery operated systems - Photo voltaic drives ## **General Description** This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. - Analog switches - General purpose line drivers - Telecom switches **Ordering Information Product Summary Part Number Package Option Packing R I V BV /BV DS(ON) D(ON) GS(th)** TN2510N8-G TO-243AA (SOT-89) 2000/Reel **DSS DGS (max) (min) (max)** _-G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity._ 100V 1.5Ω 3.0A 2.0V ~~———~~ _Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant._ **Absolute Maximum Ratings Pin Configuration** **Parameter Value** Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage ±20V ~~ee~~ Operating and storage temperature -55[O] C to +150[O] C _Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground._ **==> picture [124 x 92] intentionally omitted <==** **----- Start of picture text -----**<br> DRAIN<br>SOURCE<br>DRAIN<br>GATE<br>TO-243AA (SOT-89)<br>**----- End of picture text -----**<br> ## **Product Marking** **Typical Thermal Resistance TN5AW Package** _**θja**_ TO-243AA (SOT-89) 133[O] C/W ~~—=—<—_~~ _**Note:** Mounted on FR5 Board, 25mm x 25mm x 1.57mm_ W = Code for week sealed **TN5AW** = “Green” Packaging _Package may or may not include the following marks: Si or_ lt **TO-243AA (SOT-89)** _**Supertex inc. www.supertex.com**_ _Doc.# DSFP-TN2510 A062113_ **TN2510** ## **Thermal Characteristics** |**Package**|**ID**<br>**(continuous)****_†_**|**ID**<br>**(pulsed)**|**Power Dissipation**<br>**@TA = 25OC**|**IDR**<br>**_†_**|**IDRM**| |---|---|---|---|---|---| |TO-243AA (SOT-89)|730mA|5.0A|1.6W_‡_|730mA|5.0A| ## _**Notes:**_ - _ID (continuous) is limited by max rated Tj ._ - _Mounted on FR5 Board, 25mm x 25mm x 1.57mm._ ## **Electrical Characteristics** _(TA = 25[O] C unless otherwise specified)_ |**Sym**|**Parameter**|**Min**|**Typ**|**Max**|**Units**|**Conditions**| |---|---|---|---|---|---|---| |BVDSS|Drain-to-source breakdown voltage|100|-|-|V|VGS= 0V, ID= 2.0mA| |VGS(th)|Gate threshold voltage|0.6|-|2.0|V|VGS= VDS, ID= 1.0mA| |GS(th)<br>ΔVGS(th)|Change in VGS(th)with temperature|-|-|-4.5|mV/OC|VGS= VDS, ID= 1.0mA| |GS(th)<br>IGSS|GS(th)<br>Gate bodyleakage|-|-|100|nA|VGS= ± 20V, VDS= 0V| |IDSS|Zero gate voltage drain current|-|-|10|µA|VGS= 0V, VDS= Max Rating| |||-|-|1.0|mA|VDS= 0.8 Max Rating,<br>VGS= 0V, TA= 125°C| |ID(ON)|On-state drain current|1.2|2.0|-|A|VGS= 5.0V, VDS= 25V| |||3.0|6.0|-||VGS= 10V, VDS= 25V| |RDS(ON)|Static drain-to-source on-state resistance|-|-|15|Ω|VGS= 3.0V, ID= 250mA| |||-|1.5|2.0||VGS= 4.5V, ID= 750mA| |||-|1.0|||VGS= 10V, ID= 750mA| |ΔRDS(ON)|Change in RDS(ON)with temperature|-||||VGS= 10V, ID= 750mA| |DS(ON)<br>GFS|DS(ON)<br>Forward transductance|400|800||mmho V|mmho VDS= 25V, ID= 1.0A| |CISS|Input capacitance|-|70|125|pF|VGS= 0V,<br>VDS= 25V,<br>f = 1.0MHz| |COSS|Common source output capacitance|-|30|70||| |CRSS|Reverse transfer capacitance|-|15|25||| |td(ON)|Turn-on delaytime|-|-|10|ns|VDD= 25V,<br>ID= 1.5A,<br>RGEN= 25Ω| |d(ON)<br>tr|Rise time|-|-|10||| |td(OFF)|Turn-off delaytime|-|-|20||| |d(OFF)<br>tf|Fall time|-|-|10||| |VSD|Diode forward voltage drop|-|-|1.8|V|VGS= 0V, ISD= 1.5A| |trr|Reverse recoverytime|-|300|-|ns|VGS= 0V, ISD= 1.5A| ## _**Notes:**_ _1. All D.C. parameters 100% tested at 25[O] C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)_ _2. All A.C. parameters sample tested._ ## **Switching Waveforms and Test Circuit** **==> picture [469 x 119] intentionally omitted <==** **----- Start of picture text -----**<br> 10V 90% VDD<br>INPUT Pulse R<br>10% Generator L<br>0V OUTPUT<br>t t<br>(ON) (OFF) R<br>GEN<br>td(ON) tr td(OFF) tf<br>VDD INPUT D.U.T.<br>10% 10%<br>OUTPUT<br>0V 90% 90%<br>**----- End of picture text -----**<br> _**Supertex inc.**_ _Doc.# DSFP-TN2510 A062113_ _**www.supertex.com**_ 2 **TN2510** ## **Typical Performance Curves** **==> picture [109 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> Output Characteristics<br>**----- End of picture text -----**<br> **==> picture [199 x 191] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>8.0<br>VGS = 10V<br>6.0<br>8V<br>4.0<br>6V<br>2.0<br>4V<br>3V<br>0<br>0 10 20 30 40 50<br>VDS (volts)<br>(amperes)<br>ID<br>**----- End of picture text -----**<br> **==> picture [212 x 423] intentionally omitted <==** **----- Start of picture text -----**<br> Transconductance vs. Drain Current<br>2.0<br>VDS = 25V<br>1.6<br> TA = -55 [O] C<br>1.2<br> TA = 25 [O] C<br>0.8<br> TA = 125 [O] C<br>0.4<br>0<br>0 1.0 2.0 3.0 4.0 5.0<br>ID (amperes)<br>Maximum Rated Safe Operating Area<br>10<br>TO-243AA (pulsed)<br>1.0<br>0.1<br>0.01 TO-243AA (DC)<br> TC = 25 [O] C<br>0.001<br>0 10 100 1000<br>VDS (volts)<br> (siemens)<br>FS<br>G<br>(amperes)<br>ID<br>**----- End of picture text -----**<br> **==> picture [216 x 647] intentionally omitted <==** **----- Start of picture text -----**<br> Saturation Characteristics<br>10<br>8.0<br>6.0 VGS = 10V<br>8V<br>4.0<br>6V<br>2.0<br>4V<br>3V<br>0<br>0 2 4 6 8 10<br>VDS (volts)<br>Power Dissipation vs. Ambient Temperature<br>2.0<br>TO-243AA<br>1.0<br>0<br>0 25 50 75 100 125 150<br>TA ( [O] C)<br>Thermal Response Characteristics<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2 TO-92<br>TC = 25 [O] C<br>PD = 0.55W<br>0<br>0.001 0.01 0.1 1.0 10<br>tP (seconds)<br>(amperes)<br>ID<br>(watts)<br>D<br>P<br>Thermal Resistance (normalized)<br>**----- End of picture text -----**<br> _**Supertex inc.**_ _Doc.# DSFP-TN2510 A062113_ _**www.supertex.com**_ 3 **TN2510** ## **Typical Performance Curves** _**(cont.)**_ **==> picture [158 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> BVDSS Variation with Temperature<br>**----- End of picture text -----**<br> **==> picture [192 x 187] intentionally omitted <==** **----- Start of picture text -----**<br> 1.1<br>1.0<br>0.9<br>-50 0 50 100 150<br>TJ ( [O] C)<br>(normalized)<br>DSS<br>BV<br>**----- End of picture text -----**<br> **==> picture [189 x 194] intentionally omitted <==** **----- Start of picture text -----**<br> Transfer Characteristics<br>10<br>VGS = 25V<br>8<br>6<br>4<br>2<br>0<br>0 2 4 6 8 10<br>VGS (volts)<br>TA = -55OC<br>25OC<br>125OC<br>(amperes)<br>ID<br>**----- End of picture text -----**<br> **==> picture [205 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> Capacitance vs. Drain-to-Source Voltage<br>100<br>f = 1MHz<br>75<br>CISS<br>50<br>25<br>CRSS<br>0<br>0 10 20 30 40<br>VDS (volts)<br>COSS<br>C (picofarads)<br>**----- End of picture text -----**<br> **==> picture [217 x 618] intentionally omitted <==** **----- Start of picture text -----**<br> On-Resistance vs. Drain Current<br>10<br>VGS = 5.0V<br>8<br>6<br>VGS = 10V<br>4<br>2<br>0<br>0 2 4 6 8 10<br>ID (amperes)<br>V(th) and RDS Variation with Temperature<br>1.2 2.0<br>RDS(ON) @5.0V, 0.75A<br>1.1 1.6<br>1.0 1.2<br>0.9 V(th) @ 1.0mA 0.8<br>0.8 0.4<br>-50 0 50 100 150<br>TJ ( [O] C)<br>Gate Drive Dynamic Characteristics<br>10<br>VDS = 10V<br>8<br>6<br>VDS = 40V<br>4<br>190pF<br>2<br>70pF<br>0<br>0 0.5 1.0 1.5 2.0 2.5<br>QG (nanocoulombs)<br>(Ω)<br>DS(ON)<br>R<br>(normalized) (normalized)<br>GS(th) DS(ON)<br>V R<br>(volts)<br>GS<br>V<br>**----- End of picture text -----**<br> _**Supertex inc.**_ _Doc.# DSFP-TN2510 A062113_ _**www.supertex.com**_ 4 **TN2510** ## **3-Lead TO-243AA (SOT-89) Package Outline (N8)** **==> picture [217 x 195] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>D1<br>E H<br>1 2 3<br>L<br>b b1<br>e<br>e1<br>**----- End of picture text -----**<br> ## **Top View** **==> picture [85 x 162] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>E1<br>A<br>**----- End of picture text -----**<br> ## **Side View** **==> picture [542 x 73] intentionally omitted <==** **----- Start of picture text -----**<br> Symbol A b b1 C D D1 E E1 e e1 H L<br>MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.00 [†] 3.94 0.73 [†]<br>Dimensions 1.50 3.00<br>NOM - - - - - - - - - -<br>(mm) BSC BSC<br>MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 4.25 1.20<br>**----- End of picture text -----**<br> _JEDEC Registration TO-243, Variation AA, Issue C, July 1986._ _**†** This dimension differs from the JEDEC drawing_ _**Drawings not to scale** ._ _**Supertex Doc. #:** DSPD-3TO243AAN8, Version F111010._ _(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.)_ _**Supertex inc.**_ does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” _**Supertex inc.**_ does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the _**Supertex inc.**_ (website: http//www.supertex.com) > ©2013 _**Supertex inc.**_ All rights reserved. Unauthorized use or reproduction is prohibited. _**Supertex inc.**_ 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 _**www.supertex.com**_ _Doc.# DSFP-TN2510 A062113_ 5
Updated at April 29, 2026
Microchip Technology Inc. is a leading global provider of smart, connected, and secure embedded control solutions. Known for enabling engineers to design with confidence, the company delivers a comprehensive product portfolio that reduces total system costs and accelerates time to market across the industrial, automotive, communications, and computing sectors. Our extensive selection of Microchip components highlights the manufacturer's strength in both discrete semiconductors and advanced wireless connectivity. We carry a robust lineup of highly efficient single MOSFETs and Schottky diodes tailored for demanding power management and switching applications. Alongside these essential discretes, engineers can source a wide array of ready-to-use networking modules, prominently featuring Bluetooth and WLAN adapters that streamline the development of modern IoT and connected devices. Rounding out the offering is a diverse range of Microchip integrated circuits and specialized components. This includes versatile I/O expanders for simplified system integration, precision timing solutions such as MEMS oscillators and pulse generators, as well as AC/DC LED driver ICs and sub-2.4GHz RF transceivers. Backed by Microchip's renowned commitment to exceptional quality and reliable performance, these components provide scalable, dependable building blocks for complex electronic designs.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →