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TN2106N3-G
Power MOSFET, N Channel, 100 V, 500 mA, 2.5 ohm, TO-92, Through Hole
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- Manufacturer: MICROCHIP
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:300mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):2.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Pow
- MSL: -
- SVHC: No SVHC (04-Feb-2026)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: TN2106
- Qualification: -
- Power Dissipation: 740mW
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-92
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 500mA
- Drain Source On State Resistance: 2.5ohm
- Gate Source Threshold Voltage Max: 2.4V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.385 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
## **TN2106** ## **N-Channel Enhancement-Mode Vertical DMOS FET** ## **Features** - Free from Secondary Breakdown - Low Power Drive Requirement - Ease of Paralleling - Low CISS and Fast Switching Speeds - Excellent Thermal Stability - Integral Source-Drain Diode - High Input Impedance and High Gain ## **Applications** - Logic-Level Interfaces (Ideal for TTL and CMOS) - Solid-State Relays - Battery-Operated Systems ## **General Description** The TN2106 low-threshold Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Microchip’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. - Photovoltaic Drives - Analog Switches - General Purpose Line Drivers - Telecommunication Switches ## **Package Types** **==> picture [242 x 133] intentionally omitted <==** **----- Start of picture text -----**<br> 3-lead SOT-23 3-lead TO-92<br>(Top view) (Top view)<br>DRAIN<br>SOURCE<br>DRAIN<br>GATE SOURCE<br>GATE<br>**----- End of picture text -----**<br> See Table 3-1 and Table 3-2 for pin information. DS20005942A-page 1 2020 Microchip Technology Inc. **TN2106** ## **1.0 ELECTRICAL CHARACTERISTICS** ## **Absolute Maximum Ratings†** Drain-to-Source Voltage ...................................................................................................................................... BVDSS Drain-to-Gate Voltage ......................................................................................................................................... BVDGS Gate-to-Source Voltage ......................................................................................................................................... ±20V Operating Ambient Temperature, TA ................................................................................................... –55°C to +150°C Storage Temperature, TS ..................................................................................................................... –55°C to +150°C **† Notice:** Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. ## **DC ELECTRICAL CHARACTERISTICS** **Electrical Specifications:** TA = 25°C unless otherwise specified. All DC parameters are 100% tested at 25°C unless otherwise stated. (Pulse test: 300 µs pulse, 2% duty cycle) |**DC ELECTRICAL CHARACTERISTICS**|**DC ELECTRICAL CHARACTERISTICS**|**DC ELECTRICAL CHARACTERISTICS**|**DC ELECTRICAL CHARACTERISTICS**|**DC ELECTRICAL CHARACTERISTICS**|**DC ELECTRICAL CHARACTERISTICS**|**DC ELECTRICAL CHARACTERISTICS**| |---|---|---|---|---|---|---| |**Electrical Specifications:**TA= 25°C unless otherwise specified. All DC parameters are 100% tested at 25°C unless<br>otherwise stated. (Pulse test: 300 µs pulse, 2% duty cycle)||||||| |**Parameter**|**Sym.**|**Min.**|**Typ.**|**Max.**|**Unit**|**Conditions**| |Drain-to-Source Breakdown Voltage|BVDSS|60|—|—|V|VGS= 0V, ID= 1 mA| |Gate Threshold Voltage|VGS(th)|0.6|—|2|V|VGS= VDS, ID= 1 mA| |Change in VGS(th)with Temperature|ΔVGS(th)|—|–3.8|–5.5|mV/°C|VGS= VDS, ID= 1 mA<br>(**Note 1**)| |Gate Body Leakage Current|IGSS|—|0.1|100|nA|VGS= ± 20V, VDS= 0V| |Zero-Gate Voltage Drain Current|IDSS|—|—|1|µA|VGS= 0V,<br>VDS= Maximum rating| |||—|—|100|µA|VDS= 0.8 Maximum rating,<br>VGS= 0V, TA= 125°C<br>(**Note 1**)| |On-State Drain Current|ID(ON)|0.6|—|—|A|VGS= 10V, VDS= 25V| |Static Drain-to-Source On-State Resistance|RDS(ON)|—|—|5|Ω|VGS= 4.5V, ID= 200 mA| |||—|—|2.5|Ω|VGS= 10V, ID= 500 mA| |Change in RDS(ON)with Temperature|ΔRDS(ON)|—|0.7|1|%/°C|VGS= 10V, ID= 500 mA<br>(**Note 1**)| **Note 1:** Specification is obtained by characterization and is not 100% tested. DS20005942A-page 2 2020 Microchip Technology Inc. **TN2106** ## **AC ELECTRICAL CHARACTERISTICS** |**AC ELECTRICAL CHARACTERISTICS**|**AC ELECTRICAL CHARACTERISTICS**|**AC ELECTRICAL CHARACTERISTICS**|**AC ELECTRICAL CHARACTERISTICS**|**AC ELECTRICAL CHARACTERISTICS**|**AC ELECTRICAL CHARACTERISTICS**|**AC ELECTRICAL CHARACTERISTICS**| |---|---|---|---|---|---|---| |**Electrical Specifications:**TA= 25°C unless otherwise specified. All AC parameters are sample tested.||||||| |**Parameter**|**Sym.**|**Min.**|**Typ.**|**Max.**|**Unit**|**Conditions**| |Forward Transconductance|GFS|150|400|—|mmho|VDS= 25V, ID= 500 mA| |Input Capacitance|CISS|—|35|50|pF|VGS= 0V,<br>VDS= 25V,<br>f = 1 MHz| |Common-Source Output Capacitance|COSS|—|17|25|pF|| |Reverse Transfer Capacitance|CRSS|—|7|8|pF|| |Turn-On Delay Time|td(ON)|—|3|5|ns|VDD= 25V,<br>ID= 0.5A,<br>RGEN= 25Ω| |Rise Time|tr|—|5|8|ns|| |Turn-Off Delay Time|td(OFF)|—|6|9|ns|| |Fall Time|tf|—|5|8|ns|| |**DIODE PARAMETER**||||||| |Diode Forward Voltage Drop|VSD|—|1.2|1.8|V|VGS= 0V, ISD= 500 mA (**Note 1**)| |Reverse Recovery Time|trr|—|400|—|ns|VGS= 0V, ISD= 500 mA| **Note 1:** All DC parameters are 100% tested at 25°C unless otherwise stated. (Pulse test: 300 µs pulse, 2% duty cycle) ## **TEMPERATURE SPECIFICATIONS** |**Parameter**|**Sym.**|**Min.**|**Typ.**|**Max.**|**Unit**|**Conditions**| |---|---|---|---|---|---|---| |**TEMPERATURE RANGE**||||||| |Operating Ambient Temperature|TA|–55|—|+150|°C|| |Storage Temperature|TS|–55|—|+150|°C|| |**PACKAGE THERMAL RESISTANCE**||||||| |3-lead SOT-23|JA|—|203|—|°C/W|| |3-lead TO-92|JA|—|132|—|°C/W|| ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||||| |---|---|---|---|---|---| |**Package**|**ID (Note 1)**<br>**(Continuous)**<br>**(mA)**|**ID**<br>**(Pulsed)**<br>**(A)**|**Power Dissipation**<br>**at TA = 25°C**<br>**(W)**|**IDR(Note 1)**<br>**(mA)**|**IDRM**<br>**(A)**| |3-lead SOT-23|280|0.8|0.36|280|0.8| |3-lead TO-92|300|1|0.74|300|1| **Note 1:** ID (continuous) is limited by maximum rated TJ. DS20005942A-page 3 2020 Microchip Technology Inc. **TN2106** ## **2.0 TYPICAL PERFORMANCE CURVES** **Note:** The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g. outside specified power supply range) and therefore outside the warranted range. **==> picture [185 x 156] intentionally omitted <==** **----- Start of picture text -----**<br> 2.5<br>VGS = 10V<br>2.0<br>1.5 8V<br>1.0<br>6V<br>0.5<br>4V<br>3V<br>0<br>0 10 20 30 40 50<br>VDS (volts)<br>(amperes)<br>ID<br>**----- End of picture text -----**<br> _**FIGURE 2-1:** Output Characteristics._ **==> picture [164 x 157] intentionally omitted <==** **----- Start of picture text -----**<br> 0.5<br>VDS = 25V<br>0.4<br> TA = -55 [O] C<br>0.3<br>25 [O] C<br>0.2<br>125 [O] C<br>0.1<br>0 0 0.2 0.4 0.6 0.8 1.0<br>ID (amperes)<br>(siemens)<br>FS<br>G<br>**----- End of picture text -----**<br> _**FIGURE 2-2:** Transconductance vs. Drain Current._ **==> picture [161 x 156] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0<br>SOT-23 (pulsed)<br>SOT-23 (DC)<br>0.1<br>0.01<br>0.001 TA = 25 [O] C<br>0.1100 1 10<br>VDS (volts)<br>(amperes)<br>ID<br>**----- End of picture text -----**<br> _**FIGURE 2-3:** Maximum Rated Safe Operating Area._ **==> picture [188 x 156] intentionally omitted <==** **----- Start of picture text -----**<br> 2.5<br>VGS = 10V<br>2.0<br>1.5 8V<br>1.0<br>6V<br>0.5<br>4V<br>3V<br>0<br>0 2.0 4.0 6.0 8.0 10<br>VDS (volts)<br>(amperes)<br>ID<br>**----- End of picture text -----**<br> _**FIGURE 2-4:** Saturation Characteristics._ **==> picture [163 x 159] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0<br>0.8<br>TO-92<br>0.6<br>0.4<br>SOT-23<br>0.2<br>0 0 25 50 75 100 125 150<br>TA ( [O] C)<br>(watts)<br>D<br>P<br>**----- End of picture text -----**<br> _**FIGURE 2-5:** Power Dissipation vs. Case Temperature._ **==> picture [158 x 157] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0<br>0.8<br>0.6<br>TO-236AB<br>0.4 PD T= 0.36WA = 25 [O] C<br>0.2 TO-92<br>PTC D = 25= 1.0W [O] C<br>00.001 0.01 0.1 1.0 10<br>tP (seconds)<br>Thermal Resistance (normalized)<br>**----- End of picture text -----**<br> _**FIGURE 2-6:** Thermal Response Characteristics._ DS20005942A-page 4 2020 Microchip Technology Inc. **TN2106** **==> picture [161 x 156] intentionally omitted <==** **----- Start of picture text -----**<br> 1.1<br>1.0<br>0.9<br>-50 0 50 100 150<br>Tj ( [O] C)<br>(normalized)<br>DSS<br>BV<br>**----- End of picture text -----**<br> _**FIGURE 2-7:** BVDSS Variation with Temperature._ **==> picture [216 x 361] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0<br>VDS = 25V<br>0.8<br>0.6<br>0.4<br>0.2<br>0<br>0 2.0 4.0 6.0 8.0 10<br>VGS (volts)<br>FIGURE 2-8: Transfer Characteristics.<br>100<br>f = 1.0MHz<br>75<br>50<br>CISS<br>25<br>CRSS<br>0<br>0 10 20 30 40<br>VDS (volts)<br>COSS<br>TA = -55OC<br>25OC<br>125OC<br>(amperes)<br>ID<br>C (picofarads)<br>**----- End of picture text -----**<br> _**FIGURE 2-8:** Transfer Characteristics._ _**FIGURE 2-9:** Capacitance vs. Drain-to-Source Voltage._ **==> picture [159 x 154] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>VGS = 4.5V<br>8.0<br>VGS = 10V<br>6.0<br>4.0<br>2.0<br>0<br>0 0.5 1.0 1.5 2.0 2.5<br> ID (amperes)<br>(ohms)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br> _**FIGURE 2-10:** On-Resistance vs. Drain Current._ **==> picture [181 x 156] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0<br>1.2<br>RDS(ON) @ 10V, 0.5A<br>1.6<br>1.0<br>1.2<br>0.8<br>0.8<br>VGS(th) @ 1.0mA<br>0.6<br>0.4<br>0.4<br>0<br>-50 0 50 100 150<br>Tj ( [O] C)<br>(normalized) (normalized)<br>GS(th) DS(ON)<br>V R<br>**----- End of picture text -----**<br> _**FIGURE 2-11:** VGS(th) and RDS Variation with Temperature._ **==> picture [163 x 156] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>8.0<br>6.0<br>VDS = 10V<br>4.0 VDS = 20V<br>92 pF<br>2.0<br>38 pF<br>0 0 0.2 0.4 0.6 0.8 1.0<br>QG (nanocoulombs)<br>(volts)<br>GS<br>V<br>**----- End of picture text -----**<br> _**FIGURE 2-12:** Gate Drive Dynamic Characteristics._ DS20005942A-page 5 2020 Microchip Technology Inc. **TN2106** ## **3.0 PIN DESCRIPTION** The details on the pins of TN2106 are listed in Table 3-1 and Table 3-2. Refer to **Package Types** for the location of the pins. ## **TABLE 3-1: SOT-23 PIN FUNCTION TABLE** |**Pin Number**|**Pin Name**|**Description**| |---|---|---| |1|Gate|Gate| |2|Source|Source| |3|Drain|Drain| ## **TABLE 3-2: TO-92 PIN FUNCTION TABLE** |**Pin Number**|**Pin Name**|**Description**| |---|---|---| |1|Source|Source| |2|Gate|Gate| |3|Drain|Drain| DS20005942A-page 6 2020 Microchip Technology Inc. **TN2106** ## **4.0 FUNCTIONAL DESCRIPTION** Figure 4-1 illustrates the switching waveforms and test circuit for TN2106. **==> picture [416 x 106] intentionally omitted <==** **----- Start of picture text -----**<br> 10V 90% VDD<br>INPUT 10% GeneratorPulse RL<br>0V OUTPUT<br>t t<br>(ON) (OFF) RGEN<br>td(ON) tr td(OFF) tf<br>VDD INPUT D.U.T.<br>10% 10%<br>OUTPUT<br>0V 90% 90%<br>**----- End of picture text -----**<br> _**FIGURE 4-1:** Switching Waveforms and Test Circuit._ **TABLE 4-1: PRODUCT SUMMARY** |**BVDSS/BVDGS**<br>**(V)**|**RDS(ON)**<br>**(Maximum)**<br>**(Ω)**|**VGS(th)**<br>**(Maximum)**<br>**(V)**| |---|---|---| |60|2.5|2| DS20005942A-page 7 2020 Microchip Technology Inc. **TN2106** ## **5.0 PACKAGING INFORMATION** ## **5.1 Package Marking Information** **==> picture [186 x 241] intentionally omitted <==** **----- Start of picture text -----**<br> 3-lead SOT-23 Example<br>XXXNNN N1T333<br>3-lead TO-92 Example<br>XXXXXX TN2106<br>XX [e] 3 N3 [e] 3<br>YWWNNN 026913<br>**----- End of picture text -----**<br> **Legend:** XX...X Product Code or Customer-specific information Y Year code (last digit of calendar year) YY Year code (last 2 digits of calendar year) WW Week code (week of January 1 is week ‘01’) NNN Alphanumeric traceability code e3 Pb-free JEDEC[®] designator for Matte Tin (Sn) ***** This package is Pb-free. The Pb-free JEDEC designator ( ) e3 can be found on the outer packaging for this package. **Note** : In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for product code or customer-specific information. Package may or not include the corporate logo. DS20005942A-page 8 2020 Microchip Technology Inc. **TN2106** ## **3-Lead TO-236AB (SOT-23) Package Outline (K1/T)** ## _**2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch**_ **==> picture [363 x 244] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>3<br>E1 E<br>0.25 Gauge<br>Plane<br>1 2 L Seating<br>Plane<br>L1<br>e b<br>e1<br>Top View View B<br>A View B<br>A2<br>A<br>Seating<br>Plane<br>A1<br>Side View A View A - A<br>**----- End of picture text -----**<br> **Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.** **==> picture [412 x 47] intentionally omitted <==** **----- Start of picture text -----**<br> Symbol A A1 A2 b D E E1 e e1 L L1 �<br>MIN 0.89 0.01 0.88 0.30 2.80 2.10 1.20 0.20 [†] 0 [O]<br>Dimension NOM - - 0.95 - 2.90 - 1.30 0.95 1.90 0.50 0.54 -<br>(mm) BSC BSC REF<br>MAX 1.12 0.10 1.02 0.50 3.04 2.64 1.40 0.60 8 [O]<br>**----- End of picture text -----**<br> _JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999. † This dimension differs from the JEDEC drawing._ _**Drawings not to scale.**_ DS20005942A-page 9 2020 Microchip Technology Inc. **TN2106** Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging. DS20005942A-page 10 2020 Microchip Technology Inc. **TN2106** ## **APPENDIX A: REVISION HISTORY** ## **Revision A (October 2020)** - Converted Supertex Doc# DSFP-TN2106 to Microchip DS20005942A - Changed the package marking format - Removed the 3-lead TO-92 N3 P002, P003, - P005, P013, and P014 media types - Made minor text changes throughout the document DS20005942A-page 11 2020 Microchip Technology Inc. **TN2106** ## **PRODUCT IDENTIFICATION SYSTEM** To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office. ||**PART NO.**|**XX**|**XX**||**-X**<br>|**-X**<br>|**-**|**X**||**Examples:**|| |---|---|---|---|---|---|---|---|---|---|---|---| ||**Device**<br> <br>|**Package**<br> <br>**Options**|||**Environmental**<br>|||**Media Type**||a) TN2106K1-G:|N-Channel Enhance-<br>ment-Mode, Vertical| ||||||||||||DMOS FET, 3-lead| ||||||||||||SOT-23,3000/Reel| ||Device:|TN2106||=|N-Channel Enhancement-Mode Vertical||||||| ||||||DMOS FET|||||b) TN2106N3-G:|N-Channel Enhance-| ||||||||||||ment-Mode, Vertical| ||||||||||||DMOS FET, 3-lead| ||Packages:|K1||=|3-lead SOT-23||||||TO-92,1000/Bag| |||N3||=|3-lead TO-92||||||| ||Environmental:|G||=|Lead (Pb)-free/RoHS-compliant Package||||||| ||Media Types:|(blank)||=|3000/Reel|for a K1 Package|||||| |||(blank)||=|1000/Bag for an N3 Package||||||| ||||||||||||| DS20005942A-page 12 2020 Microchip Technology Inc. - **Note the following details of the code protection feature on Microchip devices:** - Microchip products meet the specifications contained in their particular Microchip Data Sheet. - Microchip believes that its family of products is secure when used in the intended manner and under normal conditions. - There are dishonest and possibly illegal methods being used in attempts to breach the code protection features of the Microchip devices. We believe that these methods require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data Sheets. Attempts to breach these code protection features, most likely, cannot be accomplished without violating Microchip's intellectual property rights. - Microchip is willing to work with any customer who is concerned about the integrity of its code. - Neither Microchip nor any other semiconductor manufacturer can guarantee the security of its code. Code protection does not mean that we are guaranteeing the product is "unbreakable." Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip's code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. 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Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, Augmented Switching, BlueSky, BodyCom, CodeGuard, CryptoAuthentication, CryptoAutomotive, CryptoCompanion, CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, Espresso T1S, EtherGREEN, IdealBridge, In-Circuit Serial Programming, ICSP, INICnet, Intelligent Paralleling, Inter-Chip Connectivity, JitterBlocker, maxCrypto, maxView, memBrain, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, PowerSmart, PureSilicon, QMatrix, REAL ICE, Ripple Blocker, RTAX, RTG4, SAM-ICE, Serial Quad I/O, simpleMAP, SimpliPHY, SmartBuffer, SMART-I.S., storClad, SQI, SuperSwitcher, SuperSwitcher II, Switchtec, SynchroPHY, Total Endurance, TSHARC, USBCheck, VariSense, VectorBlox, VeriPHY, ViewSpan, WiperLock, XpressConnect, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. The Adaptec logo, Frequency on Demand, Silicon Storage Technology, and Symmcom are registered trademarks of Microchip Technology Inc. in other countries. GestIC is a registered trademark of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2020, Microchip Technology Incorporated, All Rights Reserved. _For information regarding Microchip’s Quality Management Systems, please visit www.microchip.com/quality._ ISBN: 978-1-5224-7027-4 DS20005942A-page 13 2020 Microchip Technology Inc. ## **Worldwide Sales and Service** ## **AMERICAS** **Corporate Office** 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: http://www.microchip.com/support Web Address: www.microchip.com **Atlanta** Duluth, GA Tel: 678-957-9614 Fax: 678-957-1455 **Austin, TX** Tel: 512-257-3370 **Boston** Westborough, MA Tel: 774-760-0087 Fax: 774-760-0088 **Chicago** Itasca, IL Tel: 630-285-0071 Fax: 630-285-0075 **Dallas** Addison, TX Tel: 972-818-7423 Fax: 972-818-2924 **Detroit** Novi, MI Tel: 248-848-4000 **Houston, TX** Tel: 281-894-5983 **Indianapolis** Noblesville, IN Tel: 317-773-8323 Fax: 317-773-5453 Tel: 317-536-2380 **Los Angeles** Mission Viejo, CA Tel: 949-462-9523 Fax: 949-462-9608 Tel: 951-273-7800 **Raleigh, NC** Tel: 919-844-7510 **New York, NY** Tel: 631-435-6000 **San Jose, CA** Tel: 408-735-9110 Tel: 408-436-4270 **Canada - Toronto** Tel: 905-695-1980 Fax: 905-695-2078 ## **ASIA/PACIFIC** **Australia - Sydney** Tel: 61-2-9868-6733 **China - Beijing** Tel: 86-10-8569-7000 **China - Chengdu** Tel: 86-28-8665-5511 **China - Chongqing** Tel: 86-23-8980-9588 **China - Dongguan** Tel: 86-769-8702-9880 **China - Guangzhou** Tel: 86-20-8755-8029 **China - Hangzhou** Tel: 86-571-8792-8115 **China - Hong Kong SAR** Tel: 852-2943-5100 **China - Nanjing** Tel: 86-25-8473-2460 **China - Qingdao** Tel: 86-532-8502-7355 **China - Shanghai** Tel: 86-21-3326-8000 **China - Shenyang** Tel: 86-24-2334-2829 **China - Shenzhen** Tel: 86-755-8864-2200 **China - Suzhou** Tel: 86-186-6233-1526 **China - Wuhan** Tel: 86-27-5980-5300 **China - Xian** Tel: 86-29-8833-7252 **China - Xiamen** Tel: 86-592-2388138 **China - Zhuhai** Tel: 86-756-3210040 ## **ASIA/PACIFIC** **India - Bangalore** Tel: 91-80-3090-4444 **India - New Delhi** Tel: 91-11-4160-8631 **India - Pune** Tel: 91-20-4121-0141 **Japan - Osaka** Tel: 81-6-6152-7160 **Japan - Tokyo** Tel: 81-3-6880- 3770 **Korea - Daegu** Tel: 82-53-744-4301 **Korea - Seoul** Tel: 82-2-554-7200 **Malaysia - Kuala Lumpur** Tel: 60-3-7651-7906 **Malaysia - Penang** Tel: 60-4-227-8870 **Philippines - Manila** Tel: 63-2-634-9065 **Singapore** Tel: 65-6334-8870 **Taiwan - Hsin Chu** Tel: 886-3-577-8366 **Taiwan - Kaohsiung** Tel: 886-7-213-7830 **Taiwan - Taipei** Tel: 886-2-2508-8600 **Thailand - Bangkok** Tel: 66-2-694-1351 **Vietnam - Ho Chi Minh** Tel: 84-28-5448-2100 ## **EUROPE** **Austria - Wels** Tel: 43-7242-2244-39 Fax: 43-7242-2244-393 **Denmark - Copenhagen** Tel: 45-4485-5910 Fax: 45-4485-2829 **Finland - Espoo** Tel: 358-9-4520-820 **France - Paris** Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 **Germany - Garching** Tel: 49-8931-9700 **Germany - Haan** Tel: 49-2129-3766400 **Germany - Heilbronn** Tel: 49-7131-72400 **Germany - Karlsruhe** Tel: 49-721-625370 **Germany - Munich** Tel: 49-89-627-144-0 Fax: 49-89-627-144-44 **Germany - Rosenheim** Tel: 49-8031-354-560 **Israel - Ra’anana** Tel: 972-9-744-7705 **Italy - Milan** Tel: 39-0331-742611 Fax: 39-0331-466781 **Italy - Padova** Tel: 39-049-7625286 **Netherlands - Drunen** Tel: 31-416-690399 Fax: 31-416-690340 **Norway - Trondheim** Tel: 47-7288-4388 **Poland - Warsaw** Tel: 48-22-3325737 **Romania - Bucharest** Tel: 40-21-407-87-50 **Spain - Madrid** Tel: 34-91-708-08-90 Fax: 34-91-708-08-91 **Sweden - Gothenberg** Tel: 46-31-704-60-40 **Sweden - Stockholm** Tel: 46-8-5090-4654 **UK - Wokingham** Tel: 44-118-921-5800 Fax: 44-118-921-5820 DS20005942A-page 14 2020 Microchip Technology Inc. 02/28/20
Updated at April 29, 2026
Microchip Technology Inc. is a leading global provider of smart, connected, and secure embedded control solutions. Known for enabling engineers to design with confidence, the company delivers a comprehensive product portfolio that reduces total system costs and accelerates time to market across the industrial, automotive, communications, and computing sectors. Our extensive selection of Microchip components highlights the manufacturer's strength in both discrete semiconductors and advanced wireless connectivity. We carry a robust lineup of highly efficient single MOSFETs and Schottky diodes tailored for demanding power management and switching applications. Alongside these essential discretes, engineers can source a wide array of ready-to-use networking modules, prominently featuring Bluetooth and WLAN adapters that streamline the development of modern IoT and connected devices. Rounding out the offering is a diverse range of Microchip integrated circuits and specialized components. This includes versatile I/O expanders for simplified system integration, precision timing solutions such as MEMS oscillators and pulse generators, as well as AC/DC LED driver ICs and sub-2.4GHz RF transceivers. Backed by Microchip's renowned commitment to exceptional quality and reliable performance, these components provide scalable, dependable building blocks for complex electronic designs.
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