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TN0106N3-G
Power MOSFET, N Channel, 60 V, 350 mA, 1.6 ohm, TO-92, Through Hole
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- Manufacturer: MICROCHIP
- Product type: Single MOSFETs
- SVHC: No SVHC (04-Feb-2026)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: TN0106
- Qualification: -
- Power Dissipation: 1W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-92
- Drain Source Voltage Vds: 60V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 350mA
- Drain Source On State Resistance: 1.6ohm
- Gate Source Threshold Voltage Max: 2V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.551 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
_**Su ertex inc. p**_ **TN0106** ## **N-Channel Enhancement-Mode** ~~oo~~ **Vertical DMOS FET** ## **Features** - Low threshold - 2.0V max. - High input impedance - Low input capacitance - 50pF typical - Fast switching speeds - Low on-resistance - Free from secondary breakdown - Low input and output leakage ## **General Description** This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. ## **Applications** - Logic level interfaces – ideal for TTL and CMOS - Solid state relays - Battery operated systems - Photo voltaic drives - Analog switches Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. - General purpose line drivers - Telecom switches **Ordering Information Product Summary Part Number Package Option Packing BV /BV RDS(ON) ID(ON) VGS(th) DSS DGS** TN0106N3-G TO-92 1000/Bag **(max) (min) (max)** 60V 3.0Ω 2.0A 2.0V TN0106N3-G P002 TN0106N3-G P003 TN0106N3-G P005 TO-92 2000/Reel **Pin Configuration** TN0106N3-G P013 TN0106N3-G P014 _-G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity._ **DRAIN** _Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant._ **SOURCE** ~~=[1][.]~~ _Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant._ **Absolute Maximum Ratings** **GATE Parameter Value TO-92** Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS **Product Marking** Gate-to-source voltage ±20V Operating and storage temperature -55[O] C to +150[O] C **SiTN** YY = Year Sealed **0 1 0 6** _Absolute Maximum Ratings are those values beyond which damage to the device_ WW = Week Sealed _may occur. Functional operation under these conditions is not implied. Continuous_ **Y Y W W** = “Green” Packaging _operation of the device at the absolute rating level may affect device reliability. All_ ~~el~~ _voltages are referenced to device ground. Package may or may not include the following marks: Si or_ | **Typical Thermal Resistance TO-92 Package** _**θja**_ TO-92 132[O] C/W ~~—~~ _**Supertex inc. www.supertex.com**_ _Doc.# DSFP-TN0106 C080813_ **TN0106** ## **Thermal Characteristics** |**Package**|**ID**<br>**(continuous)****_†_**|**ID**<br>**(pulsed)**|**Power Dissipation**<br>**@TC = 25OC**|**IDR**<br>**_†_**|**IDRM**| |---|---|---|---|---|---| |TO-92|350mA|2.0A|1.0W|350mA|2.0A| _**Notes:**_ _† ID (continuous) is limited by max rated Tj ._ ## **Electrical Characteristics** _(TA = 25[O] C unless otherwise specified)_ |**Sym**|**Parameter**|**Min**|**Typ**|**Max**|**Units**|**Conditions**| |---|---|---|---|---|---|---| |BVDSS|Drain-to-source breakdown voltage|60|-|-|V|VGS= 0V, ID= 1.0mA| |VGS(th)|Gate threshold voltage|0.6|-|2.0|V|VGS= VDS, ID= 0.5mA| |ΔVGS(th)|Change in VGS(th)with temperature|-|-3.2|-5.0|mV/OC|VGS= VDS, ID= 1.0mA| |IGSS|Gate body leakage|-|-|100|nA|VGS= ± 20V, VDS= 0V| |IDSS|Zero Gate voltage drain current|-|-|10|µA|VGS= 0V, VDS= Max Rating| |||-|-|500||VDS= 0.8 Max Rating,<br>VGS= 0V,TA= 125°C| |ID(ON)|On-state drain current|0.75|1.4|-|A|VGS= 5.0V, VDS= 25V| |||2.0|3.4|-||VGS= 10V, VDS= 25V| |RDS(ON)|Static drain-to-source on-state resistance|-|2.0|4.5|Ω|VGS= 4.5V, ID= 250mA| |||-|1.6|||VGS= 10V, ID= 500mA| |ΔRDS(ON)|Change in RDS(ON)with temperature|-||||VGS= 10V, ID= 500mA| |GFS|Forward transductance|225|400||mmho V|mmho VDS= 25V, ID= 500mA| |CISS|Input capacitance|-|50|60|pF|VGS= 0V,<br>VDS= 25V,<br>f = 1.0MHz| |COSS|Common source output capacitance|-|25|35||| |CRSS|Reverse transfer capacitance|-|4.0|8.0||| |td(ON)|Turn-on delay time|-|2.0|5.0|ns|VDD= 25V,<br>ID= 1.0A,<br>RGEN= 25Ω| |tr|Rise time|-|3.0|5.0||| |td(OFF)|Turn-off delay time|-|6.0|7.0||| |tf|Fall time|-|3.0|6.0||| |VSD|Diode forward voltage drop||1.0|1.5|V|VGS= 0V, ISD= 500mA| |trr|Reverse recovery time|-|400|-|ns|VGS= 0V, ISD= 500mA| _**Notes:**_ _1. All D.C. parameters 100% tested at 25[O] C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)_ _2. All A.C. parameters sample tested._ ## **Switching Waveforms and Test Circuit** **==> picture [509 x 159] intentionally omitted <==** **----- Start of picture text -----**<br> 10V 90% VDD<br>INPUT Pulse R<br>10% Generator L<br>0V OUTPUT<br>t t<br>(ON) (OFF) R<br>GEN<br>td(ON) tr td(OFF) tf<br>VDD INPUT D.U.T.<br>10% 10%<br>OUTPUT<br>0V , 90% 90%<br>Doc.# DSFP-TN0106<br>C080813 2<br>**----- End of picture text -----**<br> _**Supertex inc. www.supertex.com**_ **TN0106** ## **Typical Performance Curves** **==> picture [197 x 200] intentionally omitted <==** **----- Start of picture text -----**<br> 5.0 Output Characteristics<br>4.0<br>VGS = 10V<br>3.0<br>8V<br>2.0<br>6V<br>1.0<br>4V<br>2V<br>0<br>0 10 20 30 40 50<br>VDS (volts)<br>(amperes)<br>ID<br>**----- End of picture text -----**<br> **==> picture [202 x 200] intentionally omitted <==** **----- Start of picture text -----**<br> Transconductance vs. Drain Current<br>0.5<br>TA = -55 [O] C<br>0.4<br>TA = 25 [O] C<br>0.3 TA = 150 [O] C<br>0.2<br>0.1<br>VDS = 25V<br>0<br>0 0.6 1.2 1.8 2.4 3.0<br>ID (amperes)<br>(siemens)<br>FS<br>G<br>**----- End of picture text -----**<br> **==> picture [203 x 200] intentionally omitted <==** **----- Start of picture text -----**<br> Maximum Rated Safe Operating Area<br>10<br>TC = 25 [O] C<br>TO-92 (pulsed)<br>1.0<br>TO-92 (DC)<br>0.1<br>0.01<br>1.0 10 100 1000<br>VDS (volts)<br>(amperes)<br>ID<br>**----- End of picture text -----**<br> **==> picture [209 x 657] intentionally omitted <==** **----- Start of picture text -----**<br> Saturation Characteristics<br>5.0<br>4.0<br>VGS = 10V<br>3.0<br>8V<br>2.0<br>6V<br>1.0<br>4V<br>2V<br>0<br>0 2.0 4.0 6.0 8.0 10<br>VDS (volts)<br>Power Dissipation vs. Case Temperature<br>2.0<br>TO-92<br>1.0<br>0<br>0 25 50 75 100 125 150<br>TC ( [O] C)<br>Thermal Response Characteristics<br>1.0<br>0.8<br>0.6<br>0.4<br>TO-92<br>0.2 TC = 25 [O] C<br>PD = 1W<br>0<br>0.001 0.01 0.1 1.0 10<br>tp (seconds)<br>(amperes)<br>ID<br>(watts)<br>D<br>P<br>Thermal Resistance (normalized)<br>**----- End of picture text -----**<br> _**Supertex inc.**_ _Doc.# DSFP-TN0106 C080813_ _**www.supertex.com**_ 3 **TN0106** ## **Typical Performance Curves** _**(cont.)**_ **==> picture [158 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> BVDSS Variation with Temperature<br>**----- End of picture text -----**<br> **==> picture [194 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> 1.3<br>1.2<br>1.1<br>1.0<br>0.9<br>0.8<br>-50 0 50 100 150<br>Tj ( [O] C)<br>(normalized)<br>DSS<br>BV<br>**----- End of picture text -----**<br> **==> picture [194 x 194] intentionally omitted <==** **----- Start of picture text -----**<br> Transfer Characteristics<br>3.0<br>VDS = 25V<br>TA = -55 [O] C<br>2.4<br>25 [O] C<br>1.8<br>150 [O] C<br>1.2<br>0.6<br>0<br>0 2.0 4.0 6.0 8.0 10<br>VGS (volts)<br>(amperes)<br>ID<br>**----- End of picture text -----**<br> **==> picture [203 x 194] intentionally omitted <==** **----- Start of picture text -----**<br> Capacitance vs. Drain-to-Source Voltage<br>100<br>f = 1.0MHz<br>75<br>CISS<br>50<br>COSS<br>25<br>CRSS<br>0<br>0 10 20 30 40<br>VDS (volts)<br>C (picofarads)<br>**----- End of picture text -----**<br> **==> picture [214 x 626] intentionally omitted <==** **----- Start of picture text -----**<br> On-Resistance vs. Drain Current<br>5.0<br>4.0 VGS = 5.0V VGS = 10V<br>3.0<br>2.0<br>1.0<br>0<br>0 1.0 2.0 3.0 4.0 5.0<br>ID (amperes)<br>V(th) and RDS Variation with Temperature<br>1.4 1.4<br>1.2 V(th) @ 0.5mA 1.2<br>1.0 1.0<br>RDS(ON) @ 10V, 0.5A<br>0.8 0.8<br>0.6 0.6<br>0.4 0.4<br>-50 0 50 100 150<br>Tj ( [O] C)<br>Gate Drive Dynamic Characteristics<br>10<br>VDS = 10V<br>8.0<br>VDS = 40V<br>6.0<br>4.0<br>2.0<br>50pF<br>0<br>0 1.0 2.0 3.0 4.0 5.0<br>QG (nanocoulombs)<br>55pF<br>(ohms)<br>DS(ON)<br>R<br>(normalized) (normalized)<br>VGS(th) RDS(ON)<br>(volts)<br>GS<br>V<br>**----- End of picture text -----**<br> _**Supertex inc.**_ _Doc.# DSFP-TN0106 C080813_ _**www.supertex.com**_ 4 **TN0106** ## **3-Lead TO-92 Package Outline (N3)** **==> picture [295 x 219] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>A<br>Seating<br>Plane 1 2 3<br>L<br>b c<br>e1<br>e<br>**----- End of picture text -----**<br> **==> picture [71 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> Front View<br>**----- End of picture text -----**<br> **==> picture [62 x 11] intentionally omitted <==** **----- Start of picture text -----**<br> Side View<br>**----- End of picture text -----**<br> **==> picture [132 x 67] intentionally omitted <==** **----- Start of picture text -----**<br> E<br>E1<br>1 3<br>2<br>**----- End of picture text -----**<br> **==> picture [80 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> Bottom View<br>**----- End of picture text -----**<br> **==> picture [541 x 74] intentionally omitted <==** **----- Start of picture text -----**<br> Symbol A b c D E E1 e e1 L<br>MIN .170 .014 [†] .014 [†] .175 .125 .080 .095 .045 .500<br>Dimensions<br>NOM - - - - - - - - -<br>(inches)<br>MAX .210 .022 [†] .022 [†] .205 .165 .105 .105 .055 .610*<br>**----- End of picture text -----**<br> _JEDEC Registration TO-92._ - _This dimension is not specified in the JEDEC drawing._ _† This dimension differs from the JEDEC drawing._ _**Drawings not to scale.**_ _**Supertex Doc.#:** DSPD-3TO92N3, Version E041009._ _(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.)_ _**Supertex inc.**_ does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” _**Supertex inc.**_ does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the _**Supertex inc.**_ (website: http//www.supertex.com) > ©2013 _**Supertex inc.**_ All rights reserved. Unauthorized use or reproduction is prohibited. _**Supertex inc.**_ 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 _**www.supertex.com**_ _Doc.# DSFP-TN0106 C080813_ 5
Updated at April 29, 2026
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