TMBAT49FILM
Small Signal Schottky Diode, Single, 80 V, 500 mA, 1 V, 10 A, 125 °C
- Manufacturer: STMICROELECTRONICS
- Product type:
- Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:80V; Forward Current If(AV):500mA; Forward Voltage VF Max:1V; Forward Surge Cur; Available until stocks are exhausted Alternative available
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 2Pins
- Product Range: TMBAT
- Qualification: -
- Diode Mounting: Surface Mount
- Diode Case Style: MELF
- Diode Configuration: Single
- Forward Voltage Max: 1V
- Forward Surge Current: 10A
- Reverse Recovery Time: -
- Average Forward Current: 500mA
- Operating Temperature Max: 125°C
- Repetitive Peak Reverse Voltage: 80V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.148 € |
| Current stock | 1000+ |
| Lead time | 30 days |
**TMBAT49** Small si nal Schottk diode g y **==> picture [61 x 39] intentionally omitted <==** ## **Features** - very low turn-on voltage - fast switching ## **Description** The TMBAT49 is a general purpose metal to silicon diode. This device has integrated protection against excessive voltage such as electrostatic discharges. **==> picture [67 x 63] intentionally omitted <==** **==> picture [30 x 20] intentionally omitted <==** **----- Start of picture text -----**<br> MELF<br>(glass)<br>**----- End of picture text -----**<br> 1/6 November 2010 Doc ID 3484 Rev 2 _www.st.com_ **Characteristics** **TMBAT49** ## **1 Characteristics** ## **Table 1. Absolute ratings (limiting values)** |**Table 1.**|**Absolute ratings (limiting values)**|**Absolute ratings (limiting values)**||| |---|---|---|---|---| |**Symbol**|**Parameter**||**Value**|**Unit**| |VRRM|Repetitive peak reverse voltage||80|V| |IF|Forward continuous current|Tj= 70 °C|500|mA| |IFRM|Repetitive peak forward current|tp= 1 s<br>δ ≤0.5|3|A| |IFSM|Surge non repetitive forward current|tp= 10 ms|10|A| |Tstg|Storage temperature range||- 65 to +150|°C| |Tj|Operating junction temperature range||- 65 to +125|°C| |TL|Maximum lead soldering temperature during 15 s||260|°C| |**Table 2.**<br>**Thermalparameter**||||| |**Symbol**|**Parameter**||**Value**|**Unit**| |Rth(j-l)|Junction to lead||110|°C/W| ## **Table 3. Static electrical characteristics** |**Symbol**|**Parameter**|**Test conditions**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---|---| |IR<br>(1)|Reverse leakage current|Tj= 25 °C|VR= 80 V|-|-|200|µA| |VF<br>(1)|Forward voltage drop|Tj= 25 °C|IF= 10 mA|-|-|0.32|V| ||||IF= 100 mA|-|-|0.42|| ||||IF= 1 A|-|-|1|| |1.<br>Pulse test: tp ≤300 µs,δ< 2%<br>**Table 4.**<br>**Dynamic characteristics(Tj = 25 °C)**|1.<br>Pulse test: tp ≤300 µs,δ< 2%<br>**Table 4.**<br>**Dynamic characteristics(Tj = 25 °C)**|1.<br>Pulse test: tp ≤300 µs,δ< 2%<br>**Table 4.**<br>**Dynamic characteristics(Tj = 25 °C)**|1.<br>Pulse test: tp ≤300 µs,δ< 2%<br>**Table 4.**<br>**Dynamic characteristics(Tj = 25 °C)**|1.<br>Pulse test: tp ≤300 µs,δ< 2%<br>**Table 4.**<br>**Dynamic characteristics(Tj = 25 °C)**|1.<br>Pulse test: tp ≤300 µs,δ< 2%<br>**Table 4.**<br>**Dynamic characteristics(Tj = 25 °C)**|1.<br>Pulse test: tp ≤300 µs,δ< 2%<br>**Table 4.**<br>**Dynamic characteristics(Tj = 25 °C)**|1.<br>Pulse test: tp ≤300 µs,δ< 2%<br>**Table 4.**<br>**Dynamic characteristics(Tj = 25 °C)**| |---|---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test conditions**||**Min.**|**Typ.**|**Max.**|**Unit**| |C|Diode capacitance|F = 1 MHz|VR= 0 V|-|120|-|pF| ||||VR= 5 V|-|35|-|| 2/6 Doc ID 3484 Rev 2 **Characteristics** **TMBAT49** **Figure 1. Forward voltage drop versus forward current (typical values, low level)** **==> picture [215 x 139] intentionally omitted <==** **----- Start of picture text -----**<br> 1.E+03 IFM(mA)<br>1.E+02 Tj = 25 °C<br>1.E+01 Tj = 100 °C Tj = 55 °C<br>1.E+00<br>1.E-01<br>1.E-02 VFM(V)<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8<br>**----- End of picture text -----**<br> **Figure 2. Forward voltage drop versus forward current (typical values, high level)** **==> picture [216 x 140] intentionally omitted <==** **----- Start of picture text -----**<br> 10 IFM(A)<br>9<br>8<br>7<br>6<br>5<br>4 Tj = 25 °C<br>3<br>2<br>1<br>0 VFM(V)<br>0.00 0.25 0.50 0.75 1.00 1.25 1.50<br>**----- End of picture text -----**<br> ## **Figure 3. Reverse leakage current versus reverse voltage applied (typical values)** **Figure 4. Junction capacitance versus reverse voltage applied (typical values)** **==> picture [462 x 147] intentionally omitted <==** **----- Start of picture text -----**<br> 1.E+01 IR(mA) 100 C(pF)<br>F = 1 MHz<br>Tj = 125 °C VToscj = 25 °C= 30 mV<br>1.E+00 Tj = 100 °C<br>Tj = 75 °C<br>1.E-01<br>Tj = 50 °C<br>1.E-02 Tj = 25 °C<br>1.E-03 VR(V) 10 VR(V)<br>0 10 20 30 40 50 60 70 80 1 10 100<br>**----- End of picture text -----**<br> **Figure 5. Non-repetitive peak surge forward Figure 6. Non-repetitive peak surge forward current versus pulse duration current versus number of cycles (square waveform)** **==> picture [462 x 146] intentionally omitted <==** **----- Start of picture text -----**<br> 25 IFSM(A) 10 IFSM(A)<br>20 tp=10 ms<br>One cycle<br>15<br>10<br>5<br>0 tp(ms) 1 Number of cycles<br>0.1 1.0 10.0 1 10 100<br>**----- End of picture text -----**<br> 3/6 Doc ID 3484 Rev 2 **Package information** **TMBAT49** ## **2 Package information** In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. **Table 5. MELF package dimensions** |||||||**ØB**<br>**C**|**Ref.**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**| |---|---|---|---|---|---|---|---|---|---|---|---|---|---| |||**A**||||||**Millimeters**|||**Inches**||| ||||||||||||||| |||||||||**Min.**|**Typ.**|**Max.**|**Min.**|**Typ.**|**Max.**| ||||||||||||||| ||||||||A|4.80||5.20|0.189||0.205| |||**ØD**|||||||||||| ||||||||ø B|2.50||2.65|0.098||0.104| ||||||||||||||| ||||||||C|0.45||0.60|0.018||0.024| ||**C**||||||ø D||2.50|||0.098|| ||||||||||||||| ## **Figure 7. Footprint (dimensions in mm)** **==> picture [108 x 80] intentionally omitted <==** **----- Start of picture text -----**<br> 3<br>4<br>6.5<br>**----- End of picture text -----**<br> 4/6 Doc ID 3484 Rev 2 **Ordering information** **TMBAT49** ## **3** ## **Ordering information** ## **Table 6. Ordering information** |**Order code**|**Marking**|**Package**|**Weight**|**Base qty**|**Delivery mode**| |---|---|---|---|---|---| |TMBAT49FILM|Cathode ring|MELF (glass)|0.15 g|1500|Bulk| ## **4 Revision history** **Table 7. Document revision history** |**Date**|**Revision**|**Changes**| |---|---|---| |Aug-1999|1A|Previous release.| |12-Nov-2010|2|Added ECOPACK statement. Updated graphics in_Section 1_.| 5/6 Doc ID 3484 Rev 2 **TMBAT49** ## **Please Read Carefully:** Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. **UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.** **UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. 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All other names are the property of their respective owners. © 2010 STMicroelectronics - All rights reserved ## STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America **www.st.com** 6/6 Doc ID 3484 Rev 2
Updated at April 29, 2026
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