TF414T5G
JFET Transistor, 40 V, 130 µA, 4 V, SOT-883, 3 Pin, 150 °C
- Manufacturer: ONSEMI
- Product type: JFETs
- Channel Type: N Channel
- Transistor Mounting: Surface Mount
- Gate Source Breakdown Voltage Max: 40V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 0.138 € |
| Current stock | 10+ |
| Lead time | 30 days |
Ordering number : ENA2259B ## **TF414** ## **N-Channel JFET 40V, 50 to 130** **A, 0.11mS, SOT-883** http://onsemi.com ## **Features** - Small IGSS : max 500pA (VGS= 20V, VDS=0V) ## **Electrical Connection** - Small Ciss : typ 0.7pF (VDS=10V, VGS=0V, f=1MHz) 3 - Ultrasmall package facilitates miniaturization in end products **==> picture [484 x 467] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |1 : Source| ||Halogen free compliance|2 : Drain| |3 : Gate| |Applications| ||Impedance conversion, infrared sensor applications|1|2|Top view| |Specifications| |Absolute Maximum Ratings|at Ta = 25||C|Marking| |Parameter|Symbol|Value|Unit| |Drain to Source Voltage|VDSS|40|V|3| |Gate to Drain Voltage|VGDS|40|V|1| |A4 M| |Gate Current|IG|10|mA| |Drain Current|ID|1|mA|2|M|= Date Code| |Power Dissipation|PD|100|mW|SOT-883| |Junction Temperature|Tj|150|C| |==>|Storage Temperature|Tstg|55 to +150|C|hae| |This product is designed to “ESD immunity < 200V*”,|Ordering & Package Information| |so please take care when handling. * Machine Model| |Device|Package ge e|Shippingppingingg| |TF414T5G| |8,000| |Pb-free and|SOT-883| |pcs. / reel| |Halogen Free gen Free en Free| |Stresses|exceeding Maximum|Ratings|may|damage|the|device.|Maximum Ratings|are|stress|ratings|only.|Functional operation|above|the|Recommended|Operating| |Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.| |ee| |Electrical Characteristics|at|Ta||25||C| |Value| |Parameter|Symbol|Conditions|Unit| |min|typ|max| |Gate to Drain Breakdown Voltage|V(BR)GDS|IG = 10μA, VDS=0V|40|V| |Gate to Source Leakage Current|IGSS|VGS = 20V, VDS=0V|500|pA| |Cutoff Voltage|VGS(off)|VDS = 10V, ID = 1μA|1.4|4.0|V| |——| |Drain Current|IDSS|VDS = 10V, VGS = 0V|50|130|A| |Forward Transfer Admittance|| yfs ||VDS = 10V, VGS=0V, f = 1kHz|0.05|0.11|mS| |Input Capacitance|Ciss|0.7|pF| |Reverse Transfer Capacitance|Crss|VDS = 10V, VGS = 0V, f = 1MHz|0.3|pF| **----- End of picture text -----**<br> ## **Ordering & Package Information** **==> picture [152 x 46] intentionally omitted <==** **----- Start of picture text -----**<br> |||| |---|---|---| |Device|Package ge e|Shippingppingingg| |TF414T5G| |8,000| |Pb-free and|SOT-883| |pcs. / reel| |Halogen Free gen Free en Free| **----- End of picture text -----**<br> Semiconductor Components Industries, LLC, 2014 **January, 2014** 12814HK TC-00003085/D1813HK/D1113HK GB No.A2259-1/3 **TF414** **==> picture [472 x 739] intentionally omitted <==** **----- Start of picture text -----**<br> ID -- VDS ID -- VDS<br>120 120<br>100 100<br>80 80<br>60 60<br>40 40<br>20 20<br>0 0<br>0 1 2 3 4 5 0 5 10 15 20 25 30<br>Drain-to-Source Voltage, VDS -- V IT16761 Drain-to-Source Voltage, VDS -- V IT16762<br>ID -- VGS VGS(off) -- IDSS<br>120 --2.2<br>VDS=10V<br>VDS=10V<br>100 --2.0 I D =1.0μA<br>--1.8<br>80<br>--1.6<br>60<br>--1.4<br>40<br>--1.0<br>20<br>--0.8<br>0 --0.4<br>--2.0 --1.5 --1.0 --0.5 0 40 60 80 100 120 140<br>Gate-to-Source Voltage, VGS -- V IT16764 Drain Current, IDSS -- μA HD131113<br>| yfs | -- IDSS Ciss -- VDS<br>0.14 1.0<br>VGS=0V<br>VDS=10V<br>f=1MHz<br>0.13 VGS=0V 7<br>f=1kHz<br>0.12<br>5<br>0.11<br>0.10 3<br>0.09<br>2<br>0.08<br>0.07<br>0.06 0.1<br>40 60 80 100 120 140 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100<br>Drain Current, IDSS -- μA HD131113 Drain-to-Source Voltage, VDS -- V IT16767<br>Crss -- VDS PD -- Ta<br>1.0 120<br>VGS=0V<br>f=1MHz<br>7<br>100<br>5<br>80<br>3 60<br>2 40<br>20<br>0.1 0<br>0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 0 20 40 60 80 100 120 140 160<br>Drain-to-Source Voltage, VDS -- V IT16768 Ambient Temperature, Ta -- °C HD131212<br>--0.6V<br>--0.2V<br>--0.8V<br>--1.0V<br>--0.8V<br>--1.0V<br>--0.2V<br>--0.4V<br>--0.6V<br>VGS=0V<br>--0.4V<br>VGS=0V<br>°C<br>75<br>25°C<br>Ta= --25°C<br>A A<br>μ μ<br>Drain Current, ID -- Drain Current, ID --<br>A<br>μ<br>Drain Current, ID --<br>Cutoff Voltage, VGS(off) -- V<br>| -- mS<br>fs<br>y<br>|<br>Input Capacitance, Ciss -- pF<br>Forward Transfer Admittance,<br>Reverse Transfer Capacitance, Crss -- pF Allowable Power Dissipation, PD -- mW<br>**----- End of picture text -----**<br> No.A2259-2/3 **TF414** ## **Package Dimensions** ## unit : mm **SOT-883 (XDFN3), 1.0x0.6, 0.35P** CASE 506CB ISSUE A **==> picture [187 x 265] intentionally omitted <==** **----- Start of picture text -----**<br> D A B<br>PIN ONE<br>REFERENCE ory<br>E<br>0.10 C<br>0.10 C<br>eT TOP VIEW<br>NOTE 3 A<br>0.10 C<br>; £mo<br>3X 0.10 C<br>A1<br>SIDE VIEW i t C [SEATING] PLANE<br>D2<br>t healseee E2<br>e/2<br>e 1<br>3X L<br>2X b<br>0.10 M C A B<br>0.05 M C<br>BOTTOM VIEW<br>| O]<br>**----- End of picture text -----**<br> **==> picture [165 x 235] intentionally omitted <==** **----- Start of picture text -----**<br> NOTES:<br>1. DIMENSIONING AND TOLERANCING PER<br>ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. EXPOSED COPPER ALLOWED AS SHOWN.<br>MILLIMETERS<br>DIM MIN MAX<br>A 0.340 0.440<br>A1 0.000 0.030<br>b 0.075 0.200<br>D 0.950 1.075<br>D2 0.620 BSC<br>e 0.350 BSC<br>E 0.550 0.675<br>E2 0.425 0.550<br>L 0.170 0.300<br>GENERIC<br>MARKING DIAGRAM*<br>XX M<br>XX = Specific Device Code<br>—<br>M = Date Code<br>*This information is generic. Please refer<br>to device data sheet for actual part<br>**----- End of picture text -----**<br> **==> picture [145 x 107] intentionally omitted <==** **----- Start of picture text -----**<br> RECOMMENDED<br>SOLDER FOOTPRINT*<br>1.10<br>0.41<br>2X 0.43<br>1 ce<br>0.55<br>2X 0.20 PACKAGE<br>OUTLINE<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitabilityof its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No.A2259-3/3
Updated at February 9, 2023
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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