TF412ST5G

## N-Channel JFET 30 V, 1.2 to 3.0 mA, 5.0 mS, SOT-883 

## TF412S 

## **Features** 

- Small IGSS: Max −1.0 nA (VGS = −20 V, VDS = 0 V) 

- Small Ciss: Typ 4 pF (VDS = 10 V, VGS = 0 V, f = 1 MHz) 

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- Ultrasmall Package Facilitates Miniaturization in End Products 

• This is a Pb−Free and Halogen Free Device **ELETRICAL CONNECTION** 3 **Applications** 1: Source • Low−Frequency General−purpose Amplifier, Impedance Conversion, 2: Drain 3: Gate Infrared Sensor Applications ~~A~~ 1 2 Top View **Specifications** 3 **ABSOLUTE MAXIMUM RATINGS** (at Ta = 25 ° C) 1 **Symbol Parameter Value Unit** ~~S~~ VDSX Drain−to−Source Voltage 30 V 2 VGDS Gate−to−Drain Voltage −30 V **SOT−883 (XDFN3)CASE 506CB** IG Gate Current 10 mA ID Drain Current 10 mA **MARKING DIAGRAM** PD Power Dissipation 100 mW Tj Junction Temperature 150 ° C A2 M Tstg Storage Temperature −55 to +150 ° C ~~==~~ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be A2 = Specific Device Code assumed, damage may occur and reliability may be affected. M = Date Code NOTE: This product is designed to “ESD immunity < 200 V*”, so please take care when handling. * Machine Model **ORDERING INFORMATION Device Package Shipping**[†] ~~———~~ TF412ST5G SOT−883 8.000 Tape / Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2014 **April, 2021 − Rev. 2** 

**TF412S/D** 

**TF412S** 

## **ELECTRICAL CHARACTERISTICS** (at TA = 25 ° C) 

|**ELECTRIC**|**AL CHARACTERISTICS**(at TA= 2|5°C)|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|V(BR)GDS|Gate−to−Drain Breakdown Voltage|IG= −10�A, VDS= 0 V|−30|||V|
|IGSS|Gate−to−Source Leakage Current|VGS= −20 V, VDS= 0 V|||−1.0|nA|
|VGS(off)|Cutoff Voltage|VDS= 10 V, ID= 1�A|−0.18|−0.80|−1.5|V|
|IDSS|Drain Current|VDS= 10 V, VGS= 0 V|1.2||3.0|mA|
|| yfs ||Forward Transfer Admittance|VDS= 10 V, VGS= 0 V, f = 1 kHz|3.0|5.0||mS|
|Ciss|Input Capacitance|VDS= 10 V, VGS= 0 V, f = 1 MHz||4||pF|
|Crss|Reverse Transfer Capacitance|||1.1||pF|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

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**2** 

**TF412S** 

## **TYPICAL CHARACTERISTICS** 

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3.0<br>2.5<br>2.0 V GS  = 0 V<br>1.5 −0.1 V<br>1.0 −0.2 V<br>−0.3 V<br>0.5<br>−0.4 V<br>0<br>0 1 2 3 4 5<br>VDS, Drain−to−Source Voltage (V)<br>Figure 1. ID − VDS<br>3.5<br>VDS = 10 V<br>3.0<br>2.5<br>IDSS = 3.0 mA<br>2.0<br>1.5<br>1.0<br>2.0 mA<br>0.5<br>0<br>−1.0 −0.8 −0.6 −0.4 −0.2 0<br>VGS, Gate−to−Source Voltage (V)<br>Figure 3. ID − VGS<br>−1.4<br>VDS = 10 V<br>−1.2 ID = 1.0  � A<br>−1.0<br>−0.8<br>−0.6<br>−0.4<br>−0.2<br>0<br>0 0.5 1.0 1.5 2.0 2.5 3.0 3.5<br>IDSS, Drain Current (mA)<br>, Drain Current (mA)<br>ID<br>, Drain Current (mA)<br>ID<br>(off), Cutoff Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**Figure 5. VGS(off) − IDSS** 

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3.0<br>2.5 VGS = 0 V<br>2.0 −0.1 V<br>1.5 −0.2 V<br>−0.3 V<br>1.0<br>−0.4 V<br>0.5<br>0<br>0 5 10 15 20 25 30<br>VDS, Drain−to−Source Voltage (V)<br>, Drain Current (mA)<br>ID<br>**----- End of picture text -----**<br>


**Figure 2. ID − VDS** 

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3.5<br>VDS = 10 V<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0 Ta = 75 ° C<br>0.5 25 ° C<br>−25 ° C<br>0<br>−1.0 −0.8 −0.6 −0.4 −0.2 0<br>VGS, Gate−to−Source Voltage (V)<br>, Drain Current (mA)<br>ID<br>**----- End of picture text -----**<br>


**Figure 4. ID − VGS** 

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7<br>VDS = 10 V<br>VGS = 0 V<br>6 f = 1 kHz<br>5<br>4<br>3<br>2<br>1<br>0<br>0 0.5 1.0 1.5 2.0 2.5 3.0 3.5<br>IDSS, Drain Current (mA)<br>, Forward Transfer Admittance (mS)<br>⎪<br>yfs<br>⎪<br>**----- End of picture text -----**<br>


**Figure 6.** � **yfs** � **− IDSS** 

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**3** 

**TF412S** 

## **TYPICAL CHARACTERISTICS** (continued) 

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10<br>VGS = 0 V<br>f = 1 MHz<br>7<br>5 BHUtat<br>aint<br>32 CUA,CTT TTT<br>1.0 CUICIAIU<br>0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100<br>VDS, Drain−to−Source Voltage (V)<br>Figure 7. Ciss − VDS<br>120<br>100<br>Pp} [tte]<br>80<br>ERNE<br>60 EERNEEEE<br>40<br>PL EEN EL<br>20<br>Pi t_E<br>0<br>PEE EELEINEINS<br>0 20 40 60 80 100 120 140 160<br>Ta, Ambient Temperature ( ° C)<br>Ciss, Input Capacitance (pF)<br>, Allowable Power Dissipation (mW)<br>D<br>P<br>**----- End of picture text -----**<br>


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10<br>VGS = 0 V<br>7 f = 1 MHz<br>5<br>3<br>PFmsasiigitiiatett ttt Tt ty<br>1.02 CET<a<br>7<br>5<br>REEF EEE<br>3 Pett TT [TEE]<br>2 Pe ET<br>0.1  ERSHERERESAETt Tt} ty yyy et ty<br>0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100<br>VDS, Drain−to−Source Voltage (V)<br>Crss, Reverse Transfer Capacitance (pF)<br>**----- End of picture text -----**<br>


**Figure 8. Crss − VDS** 

**Figure 9. PD − Ta** 

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**4** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**SOT−883 (XDFN3), 1.0x0.6, 0.35P** CASE 506CB ISSUE A 

DATE 30 MAR 2012 

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SCALE 8:1<br>**----- End of picture text -----**<br>


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D A B NOTES:<br>1. DIMENSIONING AND TOLERANCING PER<br>REFERENCEPIN ONE o r es 2. ASME Y14.5M, 1994.CONTROLLING DIMENSION: MILLIMETERS.<br>ÉÉ 3. EXPOSED COPPER ALLOWED AS SHOWN.<br>E MILLIMETERS<br>0.10 C ÉÉ<br>ont DIM MIN MAX<br>A 0.340 0.440<br>0.10 C t A1 0.000 0.030<br>TOP VIEW b 0.075 0.200<br>D 0.950 1.075<br>NOTE 3 A D2 0.620 BSC<br>0.10 C e 0.350 BSC<br>_¢<br>E 0.550 0.675<br>E2 0.425 0.550<br>L 0.170 0.300<br>3X 0.10 C<br>A1 GENERIC<br>SIDE VIEW C [SEATING] PLANE MARKING DIAGRAM*<br>D2 XX M<br>E2 XX = Specific Device Code<br>ve nia M = Date Code —<br>e/2<br>e 1 3X L *This information is generic. Please refer<br>2X b to device data sheet for actual part<br>0.10 M C A B marking. Pb−Free indicator, “G”, may<br>0.05 M C or not be present.<br>BOTTOM VIEW<br>RECOMMENDED<br>SOLDER FOOTPRINT*<br>1.10<br>0.41<br>2X 0.43<br>1<br>cs. st 0.55<br>2X 0.20 PACKAGE<br>‘EQ. OUTLINE<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON65407E** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: SOT−883 (XDFN3), 1.0X0.6, 0.35P PAGE 1 OF 1** ~~[1—_~~ ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

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