TC6320TG-G

## **TC6320** 

## **N-Channel and P-Channel Enhancement-Mode MOSFET Pair** 

## **Features** 

- Integrated Gate-to-source Resistor 

- Integrated Gate-to-source Zener Diode 

- Low Threshold 

- Low On-resistance 

- Low Input Capacitance 

- Fast Switching Speeds 

- Free from Secondary Breakdown 

- Low Input and Output Leakage 

- Independent Electrically Isolated N-channel and P-channel 

## **Applications** 

- High-voltage Pulsers 

- Amplifiers 

- Buffers 

- Piezoelectric Transducer Drivers 

- General Purpose Line Drivers 

- Logic-level Interfaces 

## **General Description** 

The TC6320 consists of high-voltage, low-threshold N-channel and P-channel MOSFETs in 8-lead SOIC and DFN packages. Both MOSFETs have integrated gate-to-source resistors and gate-to-source Zener diode clamps which are desired for high-voltage pulser applications. It is a complimentary, high-speed, high-voltage, gate-clamped N-channel and P-channel MOSFET pair, which utilizes an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. 

Microchip’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired. 

## **Package Types** 

**==> picture [313 x 129] intentionally omitted <==**

**----- Start of picture text -----**<br>
8-lead SOIC 5-lead DFN<br>(Top view) (Top view)<br>SN 1 8 DN<br>SN 1 8 DN<br>DN<br>GN 2 7 DN  GN 2 7 DN<br>SP 3 6 DP  GP 3 6 DP<br>DP |<br>GP 4 5 DP  SP 4 | 5 DP<br>See Table 2-1 and Table 2-2 for pin information.<br>**----- End of picture text -----**<br>


DS20005697A-page  1 

 2017 Microchip Technology Inc. 

**TC6320** 

## **Functional Block Diagram** 

**==> picture [176 x 193] intentionally omitted <==**

**----- Start of picture text -----**<br>
SN DN<br>GN DN<br>N-Channel<br>P-Channel<br>GP DP<br>SP DP<br>**----- End of picture text -----**<br>


DS20005697A-page  2 

 2017 Microchip Technology Inc. 

**TC6320** 

## **Typical Application Circuit** 

**==> picture [468 x 161] intentionally omitted <==**

**----- Start of picture text -----**<br>
+100V<br>VDD VH<br>OE<br>10nF<br>INA<br>INB<br>10nF<br>-100V<br>VSS VL<br>MD12xx, MD17xx, or MD18xx TC6320<br>**----- End of picture text -----**<br>


DS20005697A-page  3 

 2017 Microchip Technology Inc. 

**TC6320** 

## **1.0 ELECTRICAL CHARACTERISTICS** 

## **Absolute Maximum Ratings†** 

Drain-to-source Voltage ........................................................................................................................................ BVDSS Drain-to-gate Voltage ........................................................................................................................................... BVDGS Operating Ambient Temperature, TA ................................................................................................... –55°C to +150°C Storage Temperature, TS .....................................................................................................................  –55°C to +150°C 

**† Notice:** Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. 

## **N-CHANNEL ELECTRICAL CHARACTERISTICS** 

|**N-CHANNEL ELECTRICAL CHARACTERISTICS**|**N-CHANNEL ELECTRICAL CHARACTERISTICS**|**N-CHANNEL ELECTRICAL CHARACTERISTICS**|**N-CHANNEL ELECTRICAL CHARACTERISTICS**|**N-CHANNEL ELECTRICAL CHARACTERISTICS**|**N-CHANNEL ELECTRICAL CHARACTERISTICS**|**N-CHANNEL ELECTRICAL CHARACTERISTICS**|
|---|---|---|---|---|---|---|
||||||||
|**Electrical Specifications**: TA= TJ= 25°C unless otherwise specified.|||||||
|**Parameter**|**Sym.**|**Min.**|**Typ.**|**Max.**|**Unit**|**Conditions**|
|**DC PARAMETER(Note 1** **unless otherwise specified)**|||||||
|Drain-to-source Breakdown Voltage|BVDSS|200|—|—|V|VGS= 0V, ID= 2 mA|
|Gate Threshold Voltage|VGS(th)|1|—|2|V|VGS= VDS, ID= 1 mA|
|Change in VGS(th)with Temperature|∆VGS(th)|—|—|–4.5|mV/°C|VGS= VDS, ID= 1 mA(**Note 2**)|
|Gate-to-source Shunt Resistor|RGS|10|—|50|kΩ|IGS= 100µA|
|Gate-to-Source Zener Voltage|VZGS|13.2|—|25|V|IGS= 2 mA|
|Zero-gate Voltage Drain Current|IDSS|—|—|10|µA|VDS= Maximum rating,<br>VGS= 0V|
|||—|—|1|mA|VDS= 0.8 Maximum rating,<br>VGS= 0V, TA= 125°C(**Note 2**)|
|On-state Drain Current|ID(ON)|1|—|—|A|VGS= 4.5V, VDS= 25V|
|||2|—|—||VGS= 10V, VDS= 25V|
|Static Drain-to-source On-state<br>Resistance|RDS(ON)|—|—|8|Ω|VGS= 4.5V, ID= 150 mA|
|||—|—|7||VGS= 10V, ID= 1A|
|Change in RDS(ON)with Temperature|∆RDS(ON)|—|—|1|%/°C|VGS= 4.5V, ID= 150 mA(**Note 2**)|
|**AC PARAMETER(Note 2)**|||||||
|Forward Transconductance|GFS|400|—|—|mmho|VDS= 25V, ID= 500 mA|
|Input Capacitance|CISS|—|—|110|pF|VGS= 0V,<br>VDS= 25V,<br>f = 1 MHz|
|Common Source Output Capacitance|COSS|—|—|60|pF||
|Reverse Transfer Capacitance|CRSS|—|—|23|pF||
|Turn-on DelayTime|td(ON)|—|—|10|ns|VDD= 25V,<br>ID= 1A,<br>RGEN= 25Ω|
|Rise Time|tr|—|—|15|ns||
|Turn-off DelayTime|td(OFF)|—|—|20|ns||
|Fall Time|tf|—|—|15|ns||
|**DIODE PARAMETER**|||||||
|Diode Forward Voltage Drop|VSD|—|—|1.8|V|VGS= 0V, ISD= 500 mA(**Note 1**)|
|Reverse RecoveryTime|trr|—|300|—|ns|VGS= 0V, ISD= 500 mA(**Note 2**)|



**Note 1:** All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle. 

**2:** Specification is obtained by characterization and is not 100% tested. 

DS20005697A-page  4 

 2017 Microchip Technology Inc. 

**TC6320** 

## **P-CHANNEL ELECTRICAL CHARACTERISTICS** 

|**P-CHANNEL ELECTRICAL CHARACTERISTICS**|**P-CHANNEL ELECTRICAL CHARACTERISTICS**|**P-CHANNEL ELECTRICAL CHARACTERISTICS**|**P-CHANNEL ELECTRICAL CHARACTERISTICS**|**P-CHANNEL ELECTRICAL CHARACTERISTICS**|**P-CHANNEL ELECTRICAL CHARACTERISTICS**|**P-CHANNEL ELECTRICAL CHARACTERISTICS**|
|---|---|---|---|---|---|---|
||||||||
|**Electrical Specifications**: TA= TJ= 25°C unless otherwise specified.|||||||
|**Parameter**|**Sym.**|**Min.**|**Typ.**|**Max.**|**Unit**|**Conditions**|
|**DC PARAMETER(Note 1** **unless otherwise specified)**|||||||
|Drain-to-source Breakdown Voltage|BVDSS|–200|—|—|V|VGS= 0V, ID= –2 mA|
|Gate Threshold Voltage|VGS(th)|–1|—|–2.4|V|VGS= VDS, ID= –1 mA|
|Change in VGS(th)with Temperature|∆VGS(th)|—|—|4.5|mV/°C|VGS= VDS, ID= –1 mA(**Note 2**)|
|Gate-to-source Shunt Resistor|RGS|10|—|50|kΩ|IGS= 100µA|
|Gate-to-Source Zener Voltage|VZGS|13.2|—|25|V|IGS= –2 mA|
|Zero-gate Voltage Drain Current|IDSS|—|—|–10|µA|VDS= Maximum rating,<br>VGS= 0V|
|||—|—|–1|mA|VDS= 0.8 Maximum rating,<br>VGS= 0V, TA= 125°C(**Note 2**)|
|On-state Drain Current|ID(ON)|–1|—|—|A|VGS= –4.5V, VDS= –25V|
|||–2|—|—||VGS= –10V, VDS= –25V|
|Static Drain-to-source On-state<br>Resistance|RDS(ON)|—|—|10|Ω|VGS= –4.5V, ID= –150 mA|
|||—|—|8||VGS= –10V, ID= –1A|
|Change in RDS(ON)with Temperature|∆RDS(ON)|—|—|1|%/°C|VGS= –10V, ID= –200 mA(**Note 2**)|
|**AC PARAMETER(Note 2)**|||||||
|Forward Transconductance|GFS|400|—|—|mmho|VDS= –25V, ID= –500 mA|
|Input Capacitance|CISS|—|—|200|pF|VGS= 0V,<br>VDS= –25V,<br>f = 1 MHz|
|Common Source Output<br>Capacitance|COSS|—|—|55|pF||
|Reverse Transfer Capacitance|CRSS|—|—|30|pF||
|Turn-on DelayTime|td(ON)|—|—|10|ns|VDD= –25V,<br>ID= –1A,<br>RGEN= 25Ω|
|Rise Time|tr|—|—|15|ns||
|Turn-off DelayTime|td(OFF)|—|—|20|ns||
|Fall Time|tf|—|—|15|ns||
|**DIODE PARAMETER**|||||||
|Diode Forward Voltage Drop|VSD|—|—|–1.8|V|VGS= 0V, ISD= –500 mA(**Note 1**)|
|Reverse RecoveryTime|trr|—|300|—|ns|VGS= 0V, ISD= –500 mA(**Note 2**)|



**Note 1:** All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle. 

**2:** Specification is obtained by characterization and is not 100% tested. 

## **TEMPERATURE SPECIFICATIONS** 

|**TEMPERATURE SPECIFICATIONS**|**TEMPERATURE SPECIFICATIONS**|**TEMPERATURE SPECIFICATIONS**|**TEMPERATURE SPECIFICATIONS**|**TEMPERATURE SPECIFICATIONS**|**TEMPERATURE SPECIFICATIONS**|**TEMPERATURE SPECIFICATIONS**|
|---|---|---|---|---|---|---|
|**Electrical Characteristics:**Unless otherwise specified, for all specifications TA=TJ= +25°C.|||||||
|**Parameter**|**Sym.**|**Min.**|**Typ.**|**Max.**|**Unit**|**Conditions**|
|**TEMPERATURE RANGE**|||||||
|OperatingAmbient Temperature|TA|–55°C|—|+150|°C||
|Storage Temperature|TS|–55°C|—|+150|°C||
|**PACKAGE THERMAL RESISTANCE**|||||||
|8-lead DFN|JA|—|44|—|°C/W|**Note 1**|
|8-lead SOIC|JA|—|101|—|°C/W|**Note 1**|
|**Note 1:**<br>1 oz., four-layer, 3” x 4” PCB|||||||



DS20005697A-page  5 

 2017 Microchip Technology Inc. 

**TC6320** 

## **2.0 PIN DESCRIPTION** 

Table 2-1 and Table 2-2 show the description of pins in TC6320 8-lead DFN and 8-lead SOIC, respectively. Refer to **Package Types** for the location of pins. 

**TABLE 2-1: 8-LEAD DFN PIN FUNCTION TABLE** 

|**Pin Number**|**Pin Name**|**Description**|
|---|---|---|
|1|SN|Source N-channel|
|2|GN|Gate N-channel|
|3|GP|Gate P-channel|
|4|SP|Source P-channel|
|5|DP|Drain P-channel|
|6|DP|Drain P-channel|
|7|DN|Drain N-channel|
|8|DN|Drain N-channel|



**TABLE 2-2: 8-LEAD SOIC FUNCTION TABLE** 

|**Pin Number**|**Pin Name**|**Description**|
|---|---|---|
|1|SN|Source N-channel|
|2|GN|Gate N-channel|
|3|SP|Source P-channel|
|4|GP|Gate P-channel|
|5|DP|Drain P-channel|
|6|DP|Drain P-channel|
|7|DN|Drain N-channel|
|8|DN|Drain N-channel|



DS20005697A-page  6 

 2017 Microchip Technology Inc. 

**TC6320** 

## **3.0 FUNCTIONAL DESCRIPTION** 

Figure 3-1 and Figure 3-2 illustrate the switching waveforms and test circuits for TC6320. 

**==> picture [468 x 298] intentionally omitted <==**

**----- Start of picture text -----**<br>
10V<br>90%  VDD<br>Input<br>10% Pulse  RL<br>  0V<br>t t Generator  OUTPUT<br>(ON)  (OFF)<br>td(ON) tr td(OFF) tf RGEN<br>D.U.T<br>VDD<br>10% 10%  Input<br>Output<br>0V  90% 90%<br>FIGURE 3-1: N-Channel Switching Waveforms and Test Circuit.<br>0V  10%  Pulse<br>Generator<br>Input<br>90%<br>-10V  RGEN<br>t t D.U.T<br>(ON) (OFF)<br>td(ON) tr td(OFF)  tf Input<br>OUTPUT<br>0V<br>90%  90%<br>Output  RL<br>VDD 10%  10% VDD<br>**----- End of picture text -----**<br>


_**FIGURE 3-2:** P-Channel Switching Waveforms and Test Circuit._ 

## **PRODUCT SUMMARY** 

|**BVDSS/BVDGS**<br>**(V)**|**BVDSS/BVDGS**<br>**(V)**|**RDS(ON)**<br>**(Maximum)**<br>**(Ω)**|**RDS(ON)**<br>**(Maximum)**<br>**(Ω)**|
|---|---|---|---|
|**N-Channel**|**P-Channel**|**N-Channel**|**P-Channel**|
|200|–200|7|8|



DS20005697A-page  7 

 2017 Microchip Technology Inc. 

**TC6320** 

## **4.0 PACKAGING INFORMATION** 

## **4.1 Package Marking Information** 

**==> picture [248 x 268] intentionally omitted <==**

**----- Start of picture text -----**<br>
8-lead DFN  Example<br>XXXXXXX TC6320<br>XXXXXXX K6<br>e3 YYWW e3 1715<br>NNN 222<br>8-lead SOIC Example<br>XXXXXXX TC6320TG<br>e3 YYWW e3 1727<br>NNN 555<br>**----- End of picture text -----**<br>


**Legend:** XX...X Product Code or Customer-specific information Y Year code (last digit of calendar year) YY Year code (last 2 digits of calendar year) WW Week code (week of January 1 is week ‘01’) NNN Alphanumeric traceability code e3 Pb-free JEDEC[®] designator for Matte Tin (Sn) ***** This package is Pb-free. The Pb-free JEDEC designator (     ) e3 can be found on the outer packaging for this package. **Note** : In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for product code or customer-specific information. Package may or not include the corporate logo. 

DS20005697A-page  8 

 2017 Microchip Technology Inc. 

**TC6320** 

Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging. 

DS20005697A-page  9 

 2017 Microchip Technology Inc. 

**TC6320** 

Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging. 

DS20005697A-page  10 

 2017 Microchip Technology Inc. 

**TC6320** 

## **APPENDIX A: REVISION HISTORY** 

## **Revision A (October 2017)** 

- Converted Supertex Doc# DSFP-TC6320 to Microchip DS20005697A 

- Changed the package marking format 

- Changed the quantity of the 8-lead DFN K6 package from 3000/Reel to 3300/Reel 

- Changed the quantity of the 8-lead SOIC TG package from 2000/Reel to 3300/Reel 

- Made minor text changes throughout the document 

DS20005697A-page  11 

 2017 Microchip Technology Inc. 

**TC6320** 

## **PRODUCT IDENTIFICATION SYSTEM** 

To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office. 

||**PART NO.**|**XX**|**XX**||**-X**<br> **-**|**X**||**Examples:**||
|---|---|---|---|---|---|---|---|---|---|
||**Device**<br> <br>|**Package**<br> <br>**Options**|||**Environmental**<br>|**Media Type**||a) TC6320K6-G:|N-Channel and P-Channel<br>Enhancement-Mode MOSFET Pair,|
||||||||||8‐lead (4x4) VDFN, 3300/Reel|
||Device:|TC6320||=|N-Channel and P-Channel<br>Mode MOSFET Pair|Enhancement-||b) TC6320TG-G:|N-Channel and P-Channel<br>Enhancement-Mode MOSFET Pair,|
||||||||||8-lead SOIC, 3300/Reel|
||Packages:|K6||=|8-lead (4x4) VDFN|||||
|||TG||=|8-lead SOIC|||||
||Environmental:|G||=|Lead (Pb)-free/RoHS-compliant Package|||||
||Media Type:|(blank)||=|3300/Reel for a K6 Package|||||
|||||=|3300/Reel for a TG Package|||||
|||||||||||



DS20005697A-page  12 

 2017 Microchip Technology Inc. 

## **Note the following details of the code protection feature on Microchip devices:** 

- Microchip products meet the specification contained in their particular Microchip Data Sheet. 

- Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. 

- There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. 

- Microchip is willing to work with the customer who is concerned about the integrity of their code. 

- Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” 

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. 

Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE **.** Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights unless otherwise stated. 

_Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC[®] MCUs and dsPIC[®] DSCs, KEELOQ[®] code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified._ 

## **QUALITY MANAGEMENT  SYSTEM** 

## **CERTIFIED BY DNV** 

## **Trademarks** 

The Microchip name and logo, the Microchip logo, AnyRate, AVR, AVR logo, AVR Freaks, BeaconThings, BitCloud, CryptoMemory, CryptoRF, dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KEELOQ, KEELOQ logo, Kleer, LANCheck, LINK MD, maXStylus, maXTouch, MediaLB, megaAVR, MOST, MOST logo, MPLAB, OptoLyzer, PIC, picoPower, PICSTART, PIC32 logo, Prochip Designer, QTouch, RightTouch, SAM-BA, SpyNIC, SST, SST Logo, SuperFlash, tinyAVR, UNI/O, and XMEGA are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. 

ClockWorks, The Embedded Control Solutions Company, EtherSynch, Hyper Speed Control, HyperLight Load, IntelliMOS, mTouch, Precision Edge, and Quiet-Wire are registered trademarks of Microchip Technology Incorporated in the U.S.A. 

Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, BodyCom, chipKIT, chipKIT logo, CodeGuard, CryptoAuthentication, CryptoCompanion, CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial Programming, ICSP, Inter-Chip Connectivity, JitterBlocker, KleerNet, KleerNet logo, Mindi, MiWi, motorBench, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, PureSilicon, QMatrix, RightTouch logo, REAL ICE, Ripple Blocker, SAM-ICE, Serial Quad I/O, SMART-I.S., SQI, SuperSwitcher, SuperSwitcher II, Total Endurance, TSHARC, USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. 

- SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. 

Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. 

GestIC is a registered trademark of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. 

All other trademarks mentioned herein are property of their respective companies. 

- © 2017, Microchip Technology Incorporated, All Rights Reserved. ISBN: 978-1-5224-2207-5 

## == == **ISO/TS 16949** 

DS20005697A-page  13 

 2017 Microchip Technology Inc. 

## **Worldwide Sales and Service** 

## **AMERICAS** 

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**Thailand - Bangkok** Tel: 66-2-694-1351 

## **EUROPE** 

**Austria - Wels** Tel: 43-7242-2244-39 Fax: 43-7242-2244-393 

**Denmark - Copenhagen** Tel: 45-4450-2828 Fax: 45-4485-2829 

**Finland - Espoo** Tel: 358-9-4520-820 

**France - Paris** Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 

**France - Saint Cloud** Tel: 33-1-30-60-70-00 

**Germany - Garching** Tel: 49-8931-9700 **Germany - Haan** Tel: 49-2129-3766400 

**Germany - Heilbronn** Tel: 49-7131-67-3636 

**Germany - Karlsruhe** Tel: 49-721-625370 

**Germany - Munich** Tel: 49-89-627-144-0 Fax: 49-89-627-144-44 

**Germany - Rosenheim** Tel: 49-8031-354-560 

**Israel - Ra’anana** Tel: 972-9-744-7705 

**Italy - Milan** Tel: 39-0331-742611 Fax: 39-0331-466781 

**Italy - Padova** Tel: 39-049-7625286 

**Netherlands - Drunen** Tel: 31-416-690399 Fax: 31-416-690340 

**Norway - Trondheim** Tel: 47-7289-7561 

**Poland - Warsaw** Tel: 48-22-3325737 

**Romania - Bucharest** Tel: 40-21-407-87-50 

**Spain - Madrid** Tel: 34-91-708-08-90 Fax: 34-91-708-08-91 

**Sweden - Gothenberg** Tel: 46-31-704-60-40 

**Sweden - Stockholm** Tel: 46-8-5090-4654 

**UK - Wokingham** Tel: 44-118-921-5800 

Fax: 44-118-921-5820 

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 2017 Microchip Technology Inc. 11/07/16