T15B43AHM3/I

**T15B12A thru T15B51A** 

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www.vishay.com<br>**----- End of picture text -----**<br>


Vishay General Semiconductor 

## **Surface-Mount PAR[®] Transient Voltage Suppressors** 

High Temperature Stability and High Reliability Conditions 

## **FEATURES** 

- Junction passivation optimized design passivated anisotropic rectifier technology 

- TJ = 185 °C capability suitable for high reliability and automotive requirement 

- 1500 W peak pulse power capability with a 10/1000 μs waveform 

Available 

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SMB (DO-214AA)<br>**----- End of picture text -----**<br>


- Unidirectional 

- Excellent clamping capability 

Cathode Anode 

## **PRIMARY CHARACTERISTICS** 

|VBR<br>VWM|12 V to 51 V<br>10.2 V to 43.6 V|
|---|---|
|PPPM|1500 W|
|TJmax.|185 °C|
|Polarity|Unidirectional|
|Package|SMB (DO-214AA)|



## **TYPICAL APPLICATIONS** 

Use in sensitive electronics protection against voltage transients induced by inductive load switching and lightning on ICs, MOSFET, signal lines of sensor units for automotive. 

- Very fast response time 

- Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C 

- AEC-Q101 qualified 

- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 

## **MECHANICAL DATA** 

**Case:** SMB (DO-214AA) 

Molding compound meets UL 94 V-0 flammability rating 

Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified 

**Terminals:** matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 

HM3 suffix meets JESD 201 class 2 whisker test 

**Polarity:** color band denotes cathode end 

|**MAXIMUM RATINGS**(TA= 25 °C, unless otherwise noted)|**MAXIMUM RATINGS**(TA= 25 °C, unless otherwise noted)|**MAXIMUM RATINGS**(TA= 25 °C, unless otherwise noted)|**MAXIMUM RATINGS**(TA= 25 °C, unless otherwise noted)|
|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**VALUE**|**UNIT**|
|Peak pulse power dissipation with a 10/1000 μs waveform (fig.1)(1)|PPPM|1500|W|
|Peak pulse current with a 10/1000 μs waveform (fig.3)(1)|IPPM|See table next page|A|
|Operatingjunction and storage temperature range|TJ, TSTG|-65 to +185|°C|



## **Note** 

> (1) Non-repetitive current pulse, per fig.3 and derated above TA = 25 °C per fig.2 

Revision: 19-Jan-2024 

Document Number: 98360 

**1** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**T15B12A thru T15B51A** 

www.vishay.com 

Vishay General Semiconductor 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 °C, unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C,unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C,unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C,unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C,unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C,unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C,unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C,unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C,unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C,unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C,unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C,unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C,unless otherwise noted)|
|---|---|---|---|---|---|---|---|---|---|---|---|
|**DEVICE**<br>**TYPE**|**DEVICE**<br>**MARKING**<br>**CODE**|**BREAKDOWN**<br>**VOLTAGE**<br>**VBR (1) AT IT **<br>**(V)**|||**TEST**<br>**CURRENT**<br>**IT **<br>**(mA)**|**STAND-OFF**<br>**VOLTAGE**<br>**VWM**<br>**(V)**|**MAXIMUM**<br>**REVERSE**<br>**LEAKAGE**<br>**AT VWM**<br>**IR **<br>**(μA)**|**MAXIMUM**<br>**REVERSE**<br>**LEAKAGE**<br>**AT VWM**<br>**TJ = 150 °C**<br>**ID**<br>**(μA)**|**MAXIMUM**<br>**PEAK PULSE**<br>**SURGE**<br>**CURRENT**<br>**IPPM**<br>**(A)**|**MAXIMUM**<br>**CLAMPING**<br>**VOLTAGE**<br>**AT IPPM**<br> **VC **<br>**(V)**|**TYPICAL**<br>**TEMP.**<br>**COEFFICIENT**<br>**OF VBR (2)**<br>α**T**<br>**(%/°C)**|
|||**MIN.**|**NOM.**|**MAX.**||||||||
|T15B12A|KX5|11.4|12.0|12.6|1.0|10.2|2.0|12.0|91.2|17.0|0.070|
|T15B13A|KZ5|12.4|13.0|13.7|1.0|11.1|2.0|10.0|83.8|18.5|0.072|
|T15B15A|LG5|14.3|15.0|15.8|1.0|12.8|1.0|10.0|73.1|21.2|0.076|
|T15B16A|LK5|15.2|16.0|16.8|1.0|13.6|1.0|10.0|68.9|22.5|0.078|
|T15B18A|LM5|17.1|18.0|18.9|1.0|15.3|1.0|10.0|60.8|25.5|0.080|
|T15B20A|LR5|19.0|20.0|21.0|1.0|17.1|1.0|10.0|56.0|27.7|0.082|
|T15B22A|LS5|20.9|22.0|23.1|1.0|18.8|1.0|10.0|50.7|30.6|0.084|
|T15B24A|LV5|22.8|24.0|25.2|1.0|20.5|1.0|10.0|46.7|33.2|0.085|
|T15B27A|LW5|25.7|27.0|28.4|1.0|23.1|1.0|10.0|41.3|37.5|0.087|
|T15B30A|ME5|28.5|30.0|31.5|1.0|25.6|1.0|10.0|37.4|41.4|0.088|
|T15B33A|MG5|31.4|33.0|34.7|1.0|28.2|1.0|10.0|33.9|45.7|0.089|
|T15B36A|MJ5|34.2|36.0|37.8|1.0|30.8|1.0|15.0|31.1|49.9|0.090|
|T15B39A|MM5|37.1|39.0|41.0|1.0|33.3|1.0|15.0|28.8|53.9|0.091|
|T15B43A|MN5|40.9|43.0|45.2|1.0|36.8|1.0|20.0|26.1|59.3|0.092|
|T15B47A|MR5|44.7|47.0|49.4|1.0|40.2|1.0|20.0|23.9|64.8|0.092|
|T15B51A|MT5|48.5|51.0|53.6|1.0|43.6|1.0|20.0|22.1|70.1|0.093|



## **Notes** 

> (1) VBR measured after IT applied for 300 μs, IT = square wave pulse or equivalent 

> (2) To calculate VBR vs. junction temperature, use the following formula: VBR at TJ = VBR at 25 °C x (1 + αT x (TJ - 25)) 

> (3) All terms and symbols are consistent with ANSI/IEEE C62.35 

|**IMMUNITY TO STATIC ELECTRICAL DISCHARGE TO THE FOLLOWING STANDARDS**<br>(TA= 25 °C unless otherwise noted)|**IMMUNITY TO STATIC ELECTRICAL DISCHARGE TO THE FOLLOWING STANDARDS**<br>(TA= 25 °C unless otherwise noted)|**IMMUNITY TO STATIC ELECTRICAL DISCHARGE TO THE FOLLOWING STANDARDS**<br>(TA= 25 °C unless otherwise noted)|**IMMUNITY TO STATIC ELECTRICAL DISCHARGE TO THE FOLLOWING STANDARDS**<br>(TA= 25 °C unless otherwise noted)|**IMMUNITY TO STATIC ELECTRICAL DISCHARGE TO THE FOLLOWING STANDARDS**<br>(TA= 25 °C unless otherwise noted)|
|---|---|---|---|---|
|**STANDARD**|**TEST TYPE**|**TEST CONDITIONS**|**SYMBOL**|**VALUE**|
|IEC 61000-4-2|Contact discharge<br>Air discharge|C = 150 pF, R = 330Ω|ESD|30 kV|
|||||30 kV|



## **ORDERING INFORMATION** (Example) 

|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|
|---|---|---|---|---|
|**PREFERRED P/N**|**UNIT WEIGHT (g)**|**PREFERRED PACKAGE CODE**|**BASE QUANTITY**|**DELIVERY MODE**|
|T15B12AHM3/H(1)|0.107|H|750|7" diameter plastic tape and reel|
|T15B12AHM3/I(1)|0.107|I|3200|13" diameter plastic tape and reel|



## **Note** 

- (1) AEC-Q101 qualified 

Revision: 19-Jan-2024 

Document Number: 98360 

**2** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**T15B12A thru T15B51A** 

www.vishay.com 

## Vishay General Semiconductor 

## **RATINGS AND CHARACTERISTICS CURVES** (TA = 25 °C, unless otherwise noted) 

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100 10000<br>10 1000<br>1 100<br>0.1 10<br>10 100 1000 10000<br>td - Pulse Width (µs)<br>Fig. 1 - Peak Pulse Power Rating Curve<br>Axis Title<br>100 10000<br>Typical<br>80<br>1000<br>60<br>40<br>100<br>Safety Operation<br>Area<br>20<br>0 10<br>0 25 50 75 100 125 150 175 200<br>TJ - Initial Temperature (°C)<br>Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature<br>2nd line 1st line 2nd line<br> - Peak Pulse Power (kW)<br>PPM<br>P<br>)PP<br>) or Current (I<br>PP<br>Derating in Percentage (%)<br>Peak Pulse Power (P<br>**----- End of picture text -----**<br>


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150<br>t r  = 10 µs TJ = 25  ° C<br>Pulse width (t d ) is defined<br>as the point where the peak<br>current decays to 50 % of IPPM<br>100<br>Peak value I PPM<br>Half value IPPM - IPPM/2<br>50<br>10/1000 µs waveform<br>t d<br>0<br>0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>tp - Time (ms)<br>Fig. 3 - Pulse Waveform<br>Axis Title<br>10 000<br>Measured at zero bias<br>1000<br>Measured at stand-off<br>voltage, V WM<br>T J = 25 °C<br>f = 1.0 MHz<br>Vsig = 50 mVp-p<br>100<br>10 20 30 40 50 60<br>VBR - Breakdown Voltage (V)<br>Fig. 4 - Typical Junction Capacitance<br>RSM<br>- Peak Pulse Current, % I<br>IPPM<br>C - Junction Capacitance (pF)J<br>**----- End of picture text -----**<br>


## **Note** 

- Fig.1, power calculations is based on IPPM times defined maximum clamping voltage by pulse width 

Revision: 19-Jan-2024 

Document Number: 98360 

**3** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**T15B12A thru T15B51A** 

www.vishay.com 

## Vishay General Semiconductor 

## **PACKAGE OUTLINE DIMENSIONS** in inches (millimeters) 

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SMB (DO-214AA)<br>Cathode Band<br>0.086 (2.20) 0.155 (3.94)<br>0.077 (1.95) 0.130 (3.30)<br>0.180 (4.57)<br>0.160 (4.06)<br>0.012 (0.305)<br>0.006 (0.152)<br>0.096 (2.44)<br>0.084 (2.13)<br>0.060 (1.52) 0.008 (0.2)<br>0.030 (0.76) 0 (0)<br>0.220 (5.59)<br>0.205 (5.21)<br>**----- End of picture text -----**<br>


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Mounting Pad Layout<br>0.085 (2.159) MAX.<br>0.086 (2.18) MIN.<br>0.060 (1.52) MIN.<br>0.220 (5.59) REF.<br>**----- End of picture text -----**<br>


Revision: 19-Jan-2024 

Document Number: 98360 

**4** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

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## **Disclaimer** 

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Revision: 01-Jan-2024 

Document Number: 91000 

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