SZMMBZH18VALT1G

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## Zener Diodes, 24 and 40 Watt Peak Power 

## **SOT-23 Dual Common Anode Zeners** MMBZHxxxALT1G Series, SZMMBZHxxxALT1G Series 

These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage ESD protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium. 

## **Features** 

- SOT-23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration 

- Standard Zener Breakdown Voltage Range − 5.6 V to 47 V 

- Peak Power − 24 or 40 W @ 1.0 ms (Unidirectional), per Figure 6 Waveform 

**SOT-23 CASE 318 STYLE 12** 

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CATHODE 1<br>3 ANODE<br>CATHODE 2<br>ee<br>MARKING DIAGRAM<br>XXXM<br>1<br>XXX = Specific Device Code<br>M = Date Code<br>= Pb-Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


- ESD Rating: 

   - Class 3B (> 16 kV) per the Human Body Model 

   - Class C (> 400 V) per the Machine Model 

   - IEC61000-4-2 Level 4,  30 kV Contact Discharge 

- Low Leakage < 5.0 A 

- Flammability Rating UL 94 V-0 

- 175  C TJ(MAX) − Rated for High Temperature, Mission Critical Applications 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 2 of this data sheet. 

## **DEVICE MARKING INFORMATION** 

See specific marking information in the device marking column of the table on page 3 of this data sheet. 

- SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 

- These Devices are Pb-Free and are RoHS Compliant 

## **Mechanical Characteristics** 

**CASE:** Void-free, transfer-molded, thermosetting plastic case **FINISH:** Corrosion resistant finish, easily solderable 

## **MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:** 

## 260  C for 10 Seconds 

Package designed for optimal automated board assembly Small package size for high density applications Available in 8 mm Tape and Reel 

Use the Device Number to order the 7 inch/3,000 unit reel. Replace the “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel. 

Publication Order Number: **MMBZH5V6ALT1/D** 

**1** 

 Semiconductor Components Industries, LLC, 2019 **February, 2026 − Rev. 1** 

**MMBZHxxxALT1G Series, SZMMBZHxxxALT1G Series** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Power Dissipation @ 1.0 ms (Note 1)MMBZH5V6ALT1G thru MMBZH9V1ALT1G<br>@ TL 25C<br>MMBZH12VALT1G thru MMBZH47VALT1G|Ppk|24<br>40|W|
|Total Power Dissipation on FR-5 Board (Note 2)<br>@ TA= 25C<br>Derate above 25C<br>Thermal Resistance Junction-to-Ambient|PD<br>R JA|225<br>1.5<br>540|mW<br>mW/C<br>C/W|
|Junction and Storage Temperature Range|TJ, Tstg|−55 to +175|C|
|Lead Solder Temperature − Maximum (10 Second Duration)|TL|260|C|



|**Device**<br>~~===~~|**Package**<br>~~===~~|**Shipping**†<br>~~===~~|
|---|---|---|
|MMBZHxVxALT1G<br>~~===~~|SOT-23<br>(Pb-Free)<br>~~===~~|3,000 / Tape & Reel<br>~~===~~|
|SZMMBZHxVxALT1G*<br>~~===~~|SOT-23<br>(Pb-Free)<br>~~===~~|3,000 / Tape & Reel<br>~~===~~|
|MMBZHxVxALT3G<br>~~===~~|SOT-23<br>(Pb-Free)<br>~~===~~|10,000 / Tape & Reel<br>~~===~~|
|SZMMBZHxVxALT3G*<br>~~===~~|SOT-23<br>(Pb-Free)<br>~~===~~|10,000 / Tape & Reel<br>~~===~~|
|MMBZHxxVALT1G<br>~~===~~|SOT-23<br>(Pb-Free)<br>~~===~~|3,000 / Tape & Reel<br>~~===~~|
|SZMMBZHxxVALT1G*<br>~~===~~|SOT-23<br>(Pb-Free)<br>~~===~~|3,000 / Tape & Reel<br>~~===~~|
|MMBZHxxVALT3G<br>~~===~~|SOT-23<br>(Pb-Free)<br>~~===~~|10,000 / Tape & Reel<br>~~===~~|
|SZMMBZHxxVALT3G*<br>~~===~~|SOT-23<br>(Pb-Free)<br>~~===~~|10,000 / Tape & Reel<br>~~===~~|



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**MMBZHxxxALT1G Series, SZMMBZHxxxALT1G Series** 

## **ELECTRICAL CHARACTERISTICS** 

(TA = 25 C unless otherwise noted) 

**UNIDIRECTIONAL** (Circuit tied to Pins 1 and 3 or 2 and 3) 

|**UNIDIRECTIONAL**<br>~~re~~|**UNIDIRECTIONAL**(Circuit tied to Pins 1 and 3 or 2 and 3)<br>~~ee~~|
|---|---|
|**Symbol**<br>~~re~~<br>~~ae~~|**Parameter**<br>~~ee~~<br>~~ee~~|
|IPP<br>~~re~~<br>~~ae~~|Maximum Reverse Peak Pulse Current<br>~~ee~~<br>~~ee~~|
|VC<br>~~ae~~<br>~~re~~<br>~~ee~~|Clamping Voltage @ IPP<br>~~ee~~<br>~~ee~~|
|VRWM<br>~~re~~<br>~~ee~~<br>~~re~~|Working Peak Reverse Voltage<br>~~ee~~<br>~~**ee**~~<br>|
|IR<br>~~re~~<br>~~ee~~<br>~~re~~|Maximum Reverse Leakage Current @ VRWM<br>~~ee~~<br>~~**ee**~~<br>|
|VBR<br>~~ee~~<br>~~reee~~|Breakdown Voltage @ IT<br>~~ee~~<br>~~**ee**~~<br>~~ee~~|
|IT<br>~~reee~~<br>~~ee~~|Test Current<br>~~**ee**~~<br>~~ee~~<br>~~ee~~|
|VBR<br>~~ee~~<br>~~ee~~<br>~~re~~|Maximum Temperature Coefficient of VBR<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|IF<br>~~ee~~<br>~~re~~<br>~~ee~~|Forward Current<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|VF<br>~~re~~<br>~~ee~~<br>~~re~~|Forward Voltage @ IF<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|ZZT<br>~~ee~~<br>~~re~~<br>~~ee~~|Maximum Zener Impedance @ IZT<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|IZK<br>~~re~~<br>~~ee~~|Reverse Current<br>~~ee~~<br>~~ee~~|
|ZZK<br>~~ee~~<br>~~a~~|Maximum Zener Impedance @ IZK<br>~~ee~~|



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I<br>IF<br>|<br>|<br>VC VBR VRWM<br>V<br>IR VF<br>IT<br>| __<br>|<br>IPP<br>oe<br>Uni−Directional Zener<br>**----- End of picture text -----**<br>


**ELECTRICAL CHARACTERISTICS** (TA = 25 C unless otherwise noted) **UNIDIRECTIONAL** (Circuit tied to Pins 1 and 3 or Pins 2 and 3) 

**24 WATTS** 

(VF = 0.9 V Max @ IF = 10 mA) (5% Tolerance) 

|**Breakdown Voltage**<br>**Max Zener**<br>**Impedance**(Note 4)<br>**VC @ IPP**<br>(Note 5)<br>~~rs~~|
|---|
|**IR @**<br>**ZZT**|
|**Device***<br>**Device**<br>**Marking**<br>**VRWM**<br>**VRWM**<br>**VBR**<br>**VBR**(Note 3)**(V)**<br>**@ IT**<br>**@ IZT**<br>**ZZK @ IZK**<br>**VC**<br>**IPP**<br>**Volts**<br>**A**<br>**Min**<br>**Nom**<br>**Max**<br>**mA**<br>**mA**<br>**V**<br>**A**<br>**mV/ C**<br>MMBZH5V6ALT1G**<br>5A6<br>3.0<br>5.0<br>5.32<br>5.6<br>5.88<br>20<br>11<br>1600<br>0.25<br>8.0<br>3.0<br>1.26<br>MMBZH6V2ALT1G**<br>6A2<br>3.0<br>0.5<br>5.89<br>6.2<br>6.51<br>1.0<br>−<br>−<br>−<br>8.7<br>2.76<br>2.80<br>MMBZH6V8ALT1G**<br>6A8<br>4.5<br>0.5<br>6.46<br>6.8<br>7.14<br>1.0<br>−<br>−<br>−<br>9.6<br>2.5<br>3.4<br>MMBZH9V1ALT1G**<br>9A1<br>6.0<br>0.3<br>8.65<br>9.1<br>9.56<br>1.0<br>−<br>−<br>−<br>14<br>1.7<br>7.5<br>(VF= 0.9 V Max @ IF= 10 mA) (5% Tolerance)<br>**40 WATTS**<br>**Device***<br>**Device**<br>**Marking**<br>**VRWM**<br>**IR @**<br>**VRWM**<br>**Breakdown Voltage**<br>**VC @ IPP**(Note 5)<br>**VBR**<br>**VBR**(Note 3)**(V)**<br>**@ IT**<br>**VC**<br>**IPP**<br>**Volts**<br>**nA**<br>**Min**<br>**Nom**<br>**Max**<br>**mA**<br>**V**<br>**A**<br>**mV/ C**<br>MMBZH12VALT1G**<br>12A<br>8.5<br>200<br>11.40<br>12<br>12.60<br>1.0<br>17<br>2.35<br>7.5<br>MMBZH15VALT1G**<br>15A<br>12<br>50<br>14.25<br>15<br>15.75<br>1.0<br>21<br>1.9<br>12.3<br>MMBZH16VALT1G**<br>16A<br>13<br>50<br>15.20<br>16<br>16.80<br>1.0<br>23<br>1.7<br>13.8<br>MMBZH18VALT1G<br>ACJ<br>14.5<br>50<br>17.10<br>18<br>18.90<br>1.0<br>25<br>1.6<br>15.3<br>MMBZH20VALT1G**<br>20A<br>17<br>50<br>19.00<br>20<br>21.00<br>1.0<br>28<br>1.4<br>17.2<br>MMBZH27VALT1G**<br>27A<br>22<br>50<br>25.65<br>27<br>28.35<br>1.0<br>40<br>1.0<br>24.3<br>MMBZH33VALT1G**<br>33A<br>26<br>50<br>31.35<br>33<br>34.65<br>1.0<br>46<br>0.87<br>30.4<br>MMBZH47VALT1G**<br>47A<br>38<br>50<br>44.65<br>47<br>49.35<br>1.0<br>54<br>0.74<br>43.1<br>Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product<br>~~aee~~<br>~~eee~~<br>~~po~~<br>~~po~~<br>~~po~~<br>~~poa~~<br>~~a a ee~~<br>~~ee ee~~<br>~~Re Gs ss~~<br>~~OO~~<br>~~po~~<br>~~Ve~~<br>~~esGs esQs~~<br>~~Re a~~<br>~~es ssdG~~<br>~~es ee~~<br>~~es~~<br>~~es~~<br>~~Vs~~<br>~~es GG~~<br>~~Re Gsss~~<br>~~po~~|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

3. VBR measured at pulse test current IT at an ambient temperature of 25C. 

4. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC) = 0.1 IZ(DC), with the AC frequency = 1.0 kHz. 

5. Surge current waveform per Figure 6 and derate per Figure 7. 

- Includes SZ-prefix devices where applicable. 

- ** AEC-Q release available upon request. 

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## **TYPICAL CHARACTERISTICS** 

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18 1000<br>15 [i 100 ELLESEs==<br>12<br>LS 10 ESS SSS—_<br>9 ess<br>1<br>6 EE<br>0.1<br>3<br>nn ———<br>0 a 0.01<br>−40 0 +50 +100 +150 −40 +25 +85 +125<br>TEMPERATURE (C) TEMPERATURE (C)<br>Figure 1. Typical Breakdown Voltage Figure 2. Typical Leakage Current<br>versus Temperature versus Temperature<br>(Upper curve for each voltage is bidirectional mode,<br>lower curve is unidirectional mode)<br>320 60<br>280<br>50<br>240<br>SSeS] EE<br>40<br>200 Ne 27 V<br>5.6 V<br>160 30<br>120 o me S h e<br>15 V 20<br>80<br>10 33 V<br>40<br>0 esSS ——— 0 a nn<br>0 1 2 3 0 1 2 3<br>BIAS (V) BIAS (V)<br>Figure 3. Typical Capacitance versus Bias Voltage Figure 4. Typical Capacitance versus Bias Voltage<br>(Upper curve for each voltage is unidirectional mode, (Upper curve for each voltage is unidirectional mode,<br>lower curve is bidirectional mode) lower curve is bidirectional mode)<br>300<br>250<br>pf tT | tt<br>200<br>ce ee<br>150<br>Pi [NEE] ET<br>PEN<br>100<br>FR−5 BOARD<br>50 Pf<br>0<br>0 Pt 25 50 tT 75 | 100 PNA TE 125 [NI] 150 175 200<br>TEMPERATURE (C)<br>)T<br> @ I  (nA)<br>BR IR<br>(V<br>BREAKDOWN VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF) C, CAPACITANCE (pF)<br>, POWER DISSIPATION (mW)<br>D<br>P<br>**----- End of picture text -----**<br>


**Figure 5. Steady State Power Derating Curve** 

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**MMBZHxxxALT1G Series, SZMMBZHxxxALT1G Series** 

## **TYPICAL CHARACTERISTICS** 

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100<br>PULSE WIDTH (tP) IS DEFINED 90<br>|_{ tr  10 s | |_| AS THAT POINT WHERE THE NN ee<br>4 PEAK CURRENT DECAYS TO 80 NOT rd<br>100 50% OF IPP. 70<br>RK PEAK VALUE −I | O PP Ne eee<br>60<br>rN ee | f| | Kt tf} tt<br>aa IPP I 50 Pot | ~N fT tt<br>HALF VALUE −<br>2<br>| IN | | | | | 40 a eeNe<br>50<br>HSP| Wet ft tT ——}— 30 OsOGN<br>tP NE eee 20 a ee eeee<br>-ESNSEE<br>10<br>Pot | Ee<br>0 a PT Wwe Tt 0 a Ne IN<br>0 1 2 3 4 0 25 50 75 100 125 150 175 200<br>t, TIME (ms) TA, AMBIENT TEMPERATURE (C)<br>Figure 6. Pulse Waveform Figure 7. Pulse Derating Curve<br>100 100<br>Pe RECTANGULAR H ees eed | ee ee adee RECTANGULAR<br>WAVEFORM, TA = 25  C WAVEFORM, TA = 25C<br>BIDIRECTIONAL<br>BIDIRECTIONAL<br>SS SR cn UIT<br>10 PS UNIDIRECTIONAL SCOTT)Ce 10 ai; (SECT <aTTT O01<br>TTA ~ ne<br>UNIDIRECTIONAL<br>PT TTT TTT TTT QA TTT ooo SSS<br>a el a |<br>1 CoC« =  CECI 1<br>0.1 1 10 100 1000 0.1 1 10 100 1000<br>PW, PULSE WIDTH (ms) PW, PULSE WIDTH (ms)<br>C<br><br> = 25<br>A<br>VALUE (%)<br>POWER OR CURRENT @ T<br>PEAK PULSE DERATING IN % OF PEAK<br>, PEAK SURGE POWER (W) , PEAK SURGE POWER (W)<br>pk pk<br>P P<br>**----- End of picture text -----**<br>


**Figure 8. Maximum Non-repetitive Surge Power, Ppk versus PW** 

Power is defined as VRSM x IZ(pk) where VRSM is the clamping voltage at IZ(pk). 

**Figure 9. Maximum Non-repetitive Surge Power, Ppk(NOM) versus PW** 

Power is defined as VZ(NOM) x IZ(pk) where VZ(NOM) is the nominal Zener voltage measured at the low test current used for voltage classification. 

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## **TYPICAL COMMON ANODE APPLICATIONS** 

A dual junction common anode design in a SOT-23 package protects two separate lines using only one package. This adds flexibility and creativity to PCB design especially 

when board space is at a premium. Two simplified examples of ESD applications are illustrated below. 

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Computer Interface Protection<br>A<br>KEYBOARD B<br>TERMINAL FUNCTIONAL<br>I/O C<br>PRINTER DECODER<br>D<br>ETC.<br>GND<br>Tie<br>MMBZH5V6ALT1G<br>THRU<br>MMBZH47VALT1G<br>Microprocessor Protection<br>VDD<br>VGG<br>ADDRESS BUS<br>RAM ROM<br>DATA BUS<br>CPU<br>I/O MM-<br>BZH5V6ALT1G<br>CLOCK THRU<br>MM-<br>CONTROL BUS<br>BZH47VALT1G<br>GND<br>**----- End of picture text -----**<br>


MMBZH5V6ALT1G THRU MMBZH47VALT1G 

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## **REVISION HISTORY** 

|**Revision**<br>**Description of Changes**<br>**Date**<br>1<br>Rebranded the Data Sheet to**onsemi**format.<br>2/25/2025<br>This document has undergone updates prior to the inclusion of this revision history table. The changes tracked here only reflect updates made<br>~~—~~|
|---|
|on the noted approval dates.|



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