SZMMBZ47VTALT1G
Zener Array Diode, 47 V, Dual Common Anode, 225 mW, 150 °C, SOT-23, 3 Pin
- Manufacturer: ONSEMI
- Product type: Zener Array Diodes
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3 Pin
- Product Range: SZMMBZxxxALT1G Series
- Qualification: AEC-Q101
- Diode Mounting: Surface Mount
- Diode Case Style: SOT-23
- Power Dissipation: 225mW
- Zener Voltage Nom: 47V
- Diode Configuration: Dual Common Anode
- Operating Temperature Max: 150°C
| Delivery and price | |
|---|---|
| Units per pack | 9000 |
| Price | 0.045 € |
| Current stock | 10+ |
| Lead time | 30 days |
**Share Feedback DATA SHEET** Your Opinion Matters **www.onsemi.com** ~~ee~~ ## Zener Diodes, 24 and 40 Watt Peak Power ## **SOT−23 Dual Common Anode Zeners** MMBZxxxALT1G Series, SZMMBZxxxALT1G Series These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium. ## **Features** - SOT−23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration - Standard Zener Breakdown Voltage Range − 5.6 V to 47 V - Peak Power − 24 or 40 W @ 1.0 ms (Unidirectional), per Figure 6 Waveform ## **SOT−23 CASE 318** **STYLE 12** CATHODE 1 3 ANODE CATHODE 2 ~~oe~~ ## **MARKING DIAGRAM** **==> picture [108 x 68] intentionally omitted <==** **----- Start of picture text -----**<br> XXXM<br>1<br>XXX = Specific Device Code<br>M = Date Code<br>= Pb−Free Package<br>**----- End of picture text -----**<br> (Note: Microdot may be in either location) - ESD Rating: - Class 3B (> 16 kV) per the Human Body Model - Class C (> 400 V) per the Machine Model - ESD Rating of IEC61000−4−2 Level 4, ±30 kV Contact Discharge ## **ORDERING INFORMATION** See detailed ordering and shipping information on page 2 of this data sheet. - Maximum Clamping Voltage @ Peak Pulse Current - Low Leakage < 5.0 A - Flammability Rating UL 94 V−0 - SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable ## **DEVICE MARKING INFORMATION** See specific marking information in the device marking column of the table on page 3 of this data sheet. - These Devices are Pb−Free and are RoHS Compliant ## **Mechanical Characteristics** **CASE:** Void-free, transfer-molded, thermosetting plastic case **FINISH:** Corrosion resistant finish, easily solderable ## **MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:** ## 260°C for 10 Seconds Package designed for optimal automated board assembly Small package size for high density applications Available in 8 mm Tape and Reel Use the Device Number to order the 7 inch/3,000 unit reel. Replace the “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel. Publication Order Number: **MMBZ5V6ALT1/D** **1** © Semiconductor Components Industries, LLC, 2096 **August, 2024 − Rev. 21** **MMBZxxxALT1G Series, SZMMBZxxxALT1G Series** ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Peak Power Dissipation @ 1.0 ms (Note 1)MMBZ5V6ALT1G thru MMBZ9V1ALT1G<br>@ TL ≤25°C<br>MMBZ12VALT1G thru MMBZ47VALT1G|Ppk|24<br>40|W| |Total Power Dissipation on FR−5 Board (Note 2)<br>@ TA= 25°C<br>Derate above 25°C<br>Thermal Resistance Junction−to−Ambient|°PD°<br>R JA|225<br>1.8<br>556|mW°<br>mW/°C<br>°C/W| |Total Power Dissipation on Alumina Substrate (Note 3)<br>@ TA= 25°C<br>Derate above 25°C<br>Thermal Resistance Junction−to−Ambient|°PD°<br>R JA|300<br>2.4<br>417|°mW<br>mW/°C<br>°C/W| |Junction and Storage Temperature Range|TJ, Tstg|−55 to +150|°C| |Lead Solder Temperature − Maximum (10 Second Duration)|TL|260|°C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Non−repetitive current pulse per Figure 6 and derate above TA = 25 ° C per Figure 7. 2. FR−5 = 1.0 x 0.75 x 0.62 in. 3. Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina. *Other voltages may be available upon request. ## **ORDERING INFORMATION** |**ORDERING INFORMATION**||| |---|---|---| |**Device**|**Package**|**Shipping**†| |MMBZ5V6ALT1G|SOT−23<br>(Pb−Free)|3,000 / Tape & Reel| |SZMMBZ5V6ALT1G*|SOT−23<br>(Pb−Free)|3,000 / Tape & Reel| |MMBZ5V6ALT3G|SOT−23<br>(Pb−Free)|10,000 / Tape & Reel| |MMBZ6VxALT1G|SOT−23<br>(Pb−Free)|3,000 / Tape & Reel| |SZMMBZ6VxALT1G*|SOT−23<br>(Pb−Free)|3,000 / Tape & Reel| |MMBZ6VxALT3G|SOT−23<br>(Pb−Free)|10,000 / Tape & Reel| |MMBZ9V1ALT1G|SOT−23<br>(Pb−Free)|3,000 / Tape & Reel| |MMBZ9V1ALT13G|SOT−23<br>(Pb−Free)|10,000 / Tape & Reel| |MMBZxxVALT1G|SOT−23<br>(Pb−Free)|3,000 / Tape & Reel| |SZMMBZxxVALT1G*|SOT−23<br>(Pb−Free)|3,000 / Tape & Reel| |MMBZxxVALT3G|SOT−23<br>(Pb−Free)|10,000 / Tape & Reel| |SZMMBZxxVALT3G*|SOT−23<br>(Pb−Free)|10,000 / Tape & Reel| |SZMMBZxxVTALT1G*|SOT−23<br>(Pb−Free)|3,000 / Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable **www.onsemi.com** **Share Feedback** Your Opinion Matters **2** **MMBZxxxALT1G Series, SZMMBZxxxALT1G Series** ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**UNIDIRECTIONAL**(Circuit tied to Pins 1 and 3 or 2 and 3)<br>**Symbol**<br>**Parameter**<br>IPP<br>Maximum Reverse Peak Pulse Current<br>IF<br>**I**<br>~~eeee~~<br>~~a ee~~| |---| |VC<br>Clamping Voltage @ IPP<br>VRWM<br>Working Peak Reverse Voltage<br>IR<br>Maximum Reverse Leakage Current @ VRWM<br>VBR<br>Breakdown Voltage @ IT<br>IT<br>Test Current<br>VBR<br>Maximum Temperature Coefficient of VBR<br>IF<br>Forward Current<br>VF<br>Forward Voltage @ IF<br>ZZT<br>Maximum Zener Impedance @ IZT<br>IPP<br>**V**<br>IR<br>IT<br>VRWM<br>VC VBR<br>VF<br>~~a|~~<br>~~a|~~<br>~~a~~<br>~~a~~<br>~~==~~<br>~~a~~<br>~~ee~~<br>|<br>~~Se~~<br>|<br>~~a~~<br>|<br>~~a~~<br>~~ee~~<br>~~a~~<br>~~a~~| |IZK<br>Reverse Current<br>ZZK<br>Maximum Zener Impedance @ IZK<br>**Uni−Directional Zener**<br>~~a ee~~<br>~~a~~| **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) **UNIDIRECTIONAL** (Circuit tied to Pins 1 and 3 or Pins 2 and 3) (VF = 0.9 V Max @ IF = 10 mA) (5% Tolerance) **24 WATTS** |**Device***<br>**Device**<br>**Marking**<br>**VRWM**<br>**IR @**<br>**VRWM**<br>**Breakdown Voltage**<br>**Max Zener**<br>**Impedance**(Note 5)<br>**VC @ IPP**<br>(Note 6)<br>**VBR**<br>**VBR**(Note 4)**(V)**<br>**@ IT**<br>**ZZT**<br>**@ IZT**<br>**ZZK @ IZK**<br>**VC**<br>**IPP**<br>**Volts**<br>**A**<br>**Min**<br>**Nom**<br>**Max**<br>**mA**<br>**mA**<br>**V**<br>**A**<br>**mV/ C**<br>MMBZ5V6ALT1G/T3G<br>5A6<br>3.0<br>5.0<br>5.32<br>5.6<br>5.88<br>20<br>11<br>1600<br>0.25<br>8.0<br>3.0<br>1.26<br>MMBZ6V2ALT1G<br>6A2<br>3.0<br>0.5<br>5.89<br>6.2<br>6.51<br>1.0<br>−<br>−<br>−<br>8.7<br>2.76<br>2.80<br>MMBZ6V8ALT1G<br>6A8<br>4.5<br>0.5<br>6.46<br>6.8<br>7.14<br>1.0<br>−<br>−<br>−<br>9.6<br>2.5<br>3.4<br>MMBZ9V1ALT1G<br>9A1<br>6.0<br>0.3<br>8.65<br>9.1<br>9.56<br>1.0<br>−<br>−<br>−<br>14<br>1.7<br>7.5<br>~~es~~<br>~~ee ee~~<br>~~eee~~<br>~~a aee~~<br>~~eee~~<br>~~po~~<br>~~po~~<br>~~**p**o~~<br>~~o~~| |---| |(VF= 0.9 V Max @ IF= 10 mA) (5% Tolerance)<br>**40 WATTS**| |**Device***<br>**Device**<br>**Marking**<br>**VRWM**<br>**IR @**<br>**VRWM**<br>**Breakdown Voltage**<br>**VC @ IPP**(Note 6)<br>**VBR**<br>**VBR**(Note 4)**(V)**<br>**@ IT**<br>**VC**<br>**IPP**<br>**Volts**<br>**nA**<br>**Min**<br>**Nom**<br>**Max**<br>**mA**<br>**V**<br>**A**<br>**mV/ C**<br>MMBZ12VALT1G<br>12A<br>8.5<br>200<br>11.40<br>12<br>12.60<br>1.0<br>17<br>2.35<br>7.5<br>MMBZ15VALT1G<br>15A<br>12<br>50<br>14.25<br>15<br>15.75<br>1.0<br>21<br>1.9<br>12.3<br>MMBZ16VALT1G<br>16A<br>13<br>50<br>15.20<br>16<br>16.80<br>1.0<br>23<br>1.7<br>13.8<br>MMBZ18VALT1G<br>18A<br>14.5<br>50<br>17.10<br>18<br>18.90<br>1.0<br>25<br>1.6<br>15.3<br>MMBZ20VALT1G<br>20A<br>17<br>50<br>19.00<br>20<br>21.00<br>1.0<br>28<br>1.4<br>17.2<br>MMBZ27VALT1G/T3G<br>27A<br>22<br>50<br>25.65<br>27<br>28.35<br>1.0<br>40<br>1.0<br>24.3<br>MMBZ33VALT1G<br>33A<br>26<br>50<br>31.35<br>33<br>34.65<br>1.0<br>46<br>0.87<br>30.4<br>MMBZ47VALT1G<br>47A<br>38<br>50<br>44.65<br>47<br>49.35<br>1.0<br>54<br>0.74<br>43.1<br>(VF= 0.9 V Max @ IF= 10 mA) (2% Tolerance)<br>**40 WATTS**<br>**Device***<br>**Device**<br>**Marking**<br>**VRWM**<br>**IR @**<br>**VRWM**<br>**Breakdown Voltage**<br>**VC @ IPP**(Note 6)<br>**VBR**<br>**VBR**(Note 4)**(V)**<br>**@ IT**<br>**VC**<br>**IPP**<br>**Volts**<br>**nA**<br>**Min**<br>**Nom**<br>**Max**<br>**mA**<br>**V**<br>**A**<br>**mV/ C**<br>MMBZ16VTALT1G<br>16T<br>13<br>50<br>15.68<br>16<br>16.32<br>1.0<br>23<br>1.7<br>13.8<br>MMBZ47VTALT1G<br>47T<br>38<br>50<br>46.06<br>47<br>47.94<br>1.0<br>54<br>0.74<br>43.1<br>Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product<br>~~**p**e~~<br>~~aee~~<br>~~ee~~<br>~~o~~<br>~~po~~<br>~~po~~<br>~~po~~<br>~~po~~<br>~~pO~~<br>~~po~~<br>~~pooe~~<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~ee ee~~<br>~~po~~<br>~~po~~| |performance may not be indicated by the Electrical Characteristics if operated under different conditions.| 4. VBR measured at pulse test current IT at an ambient temperature of 25 ° C. 5. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC) = 0.1 IZ(DC), with the AC frequency = 1.0 kHz. 6. Surge current waveform per Figure 6 and derate per Figure 7 * Include SZ-prefix devices where applicable. **www.onsemi.com 3** ~~OO~~ **Share Feedback** Your Opinion Matters **MMBZxxxALT1G Series, SZMMBZxxxALT1G Series** ## **TYPICAL CHARACTERISTICS** **==> picture [490 x 618] intentionally omitted <==** **----- Start of picture text -----**<br> 18 1000<br>15<br>SJ 100 SS<br>12<br>SS 10 EES<br>9<br>So See<br>1<br>6 See<br>0.1<br>3<br>PTT TTT TT | pe<br>0 eee 0.01<br>−40 0 +50 +100 +150 −40 +25 +85 +125<br>TEMPERATURE ( ° C) TEMPERATURE ( ° C)<br>Figure 1. Typical Breakdown Voltage Figure 2. Typical Leakage Current<br>versus Temperature versus Temperature<br>(Upper curve for each voltage is bidirectional mode,<br>lower curve is unidirectional mode)<br>320280 ee 60<br>ee 50<br>240<br>STE RE ES<br>40<br>200 27 V<br>S 5.6 V e RS<br>160 30<br>120 H eeees Bs r _<br>15 V 20<br>80<br>a 10 —— 33 V<br>40<br>0 A 0<br>0 1 2 3 0 1 2 3<br>BIAS (V) BIAS (V)<br>Figure 3. Typical Capacitance versus Bias Voltage Figure 4. Typical Capacitance versus Bias Voltage<br>(Upper curve for each voltage is unidirectional mode, (Upper curve for each voltage is unidirectional mode,<br>lower curve is bidirectional mode) lower curve is bidirectional mode)<br>300<br>250<br>Nee ALUMINA SUBSTRATE<br>200<br>rN<br>150 SN<br>100 PtPNA<br>FR−5 BOARD<br>50 po<br>0 PN<br>0 25 50 75 100 125 150 175<br>TEMPERATURE ( ° C)<br>)T<br> @ I (nA)<br>BR IR<br>(V<br>BREAKDOWN VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF) C, CAPACITANCE (pF)<br>, POWER DISSIPATION (mW)<br>D<br>P<br>**----- End of picture text -----**<br> **Figure 5. Steady State Power Derating Curve** **www.onsemi.comonsemi.com 4** ~~———~~ **www.onsemi.comonsemi.com 4** **Share Feedback** Your Opinion Matters **MMBZxxxALT1G Series, SZMMBZxxxALT1G Series** ## **TYPICAL CHARACTERISTICS** **==> picture [490 x 380] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>PULSE WIDTH (tP) IS DEFINED 90<br>t r ≤ 10 s AS THAT POINT WHERE THE<br>a e ee| | PEAK CURRENT DECAYS TO 80 rNNN<br>100 50% OF IPP. 70<br>—— PEAK VALUE −I PP Nee<br>60<br>PN es pF | |N | | | ft<br>a IPP I 50 Pf | AE fT ft |<br>HALF VALUE −<br>2<br>aN tf 40 a ee NN<br>50<br>A 30 Pet | tf RE<br>t P PN 20 a ee NS<br>pfs ttf tt 10 a<br>0 a ee 0 Ff | | | | TN |<br>0 1 2 3 4 0 25 50 75 100 125 150 175 200<br>t, TIME (ms) TA, AMBIENT TEMPERATURE ( ° C)<br>Figure 6. Pulse Waveform Figure 7. Pulse Derating Curve<br>100 100<br>RECTANGULAR RECTANGULAR<br>WAVEFORM, TA = 25 ° C WAVEFORM, T A = 25 ° C<br>BIDIRECTIONAL<br>BIDIRECTIONAL<br>See Tl SR cin CUTICLE<br>IS ~~ it [Ch py’ Nay TA<br>10 10<br>UNIDIRECTIONAL<br>ra TLE UNIDIRECTIONAL<br>EHTS Pt oH<br>PEP ATE PEE IAT TT PT TT TT<br>1 Concmc cio $= ECHR 1<br>0.1 1 10 100 1000 0.1 1 10 100 1000<br>PW, PULSE WIDTH (ms) PW, PULSE WIDTH (ms)<br>C<br>°<br> = 25<br>A<br>VALUE (%)<br>POWER OR CURRENT @ T<br>PEAK PULSE DERATING IN % OF PEAK<br>, PEAK SURGE POWER (W) , PEAK SURGE POWER (W)<br>pk pk<br>P P<br>**----- End of picture text -----**<br> **Figure 8. Maximum Non−repetitive Surge Power, Ppk versus PW** Power is defined as VRSM x IZ(pk) where VRSM is the clamping voltage at IZ(pk). **Figure 9. Maximum Non−repetitive Surge Power, Ppk(NOM) versus PW** Power is defined as VZ(NOM) x IZ(pk) where VZ(NOM) is the nominal Zener voltage measured at the low test current used for voltage classification. **www.onsemi.com** **Share Feedback** Your Opinion Matters **5** **MMBZxxxALT1G Series, SZMMBZxxxALT1G Series** ## **TYPICAL COMMON ANODE APPLICATIONS** A dual junction common anode design in a SOT−23 package protects two separate lines using only one package. This adds flexibility and creativity to PCB design especially when board space is at a premium. Two simplified examples of ESD applications are illustrated below. **==> picture [441 x 501] intentionally omitted <==** **----- Start of picture text -----**<br> Computer Interface Protection<br>A<br>KEYBOARD B<br>TERMINAL FUNCTIONAL<br>I/O C<br>PRINTER DECODER<br>D<br>ETC.<br>GND<br>is<br>MMBZ5V6ALT1G<br>THRU<br>MMBZ47VALT1G<br>Microprocessor Protection<br>VDD<br>VGG<br>ADDRESS BUS<br>RAM ROM<br>DATA BUS<br>CPU<br>I/O MMBZ5V6ALT1G<br>THRU<br>CLOCK MMBZ47VALT1G<br>CONTROL BUS<br>GND<br>**----- End of picture text -----**<br> MMBZ5V6ALT1G THRU MMBZ47VALT1G **www.onsemi.com** **Share Feedback** Your Opinion Matters **6** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [326 x 39] intentionally omitted <==** **----- Start of picture text -----**<br> SOT−23 (TO−236) 2.90x1.30x1.00 1.90P<br>CASE 318<br>ISSUE AU<br>DATE 14 AUG 2024<br>**----- End of picture text -----**<br> **SCALE 4:1** **==> picture [102 x 112] intentionally omitted <==** **----- Start of picture text -----**<br> GENERIC<br>MARKING DIAGRAM*<br>XXXM �<br>�<br>1<br>XXX = Specific Device Code<br>M = Date Code<br>� = Pb−Free Package<br>**----- End of picture text -----**<br> *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. ## **STYLES ON PAGE 2** Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42226B** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: SOT−23 (TO−236) 2.90x1.30x1.00 1.90P PAGE 1 OF 2** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 DATE 14 AUG 2024 ## **SOT−23 (TO−236) 2.90x1.30x1.00 1.90P** CASE 318 ISSUE AU **==> picture [489 x 178] intentionally omitted <==** **----- Start of picture text -----**<br> STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8:<br>CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE<br>2. EMITTER 2. BASE 2. NO CONNECTION<br>3. COLLECTOR 3. COLLECTOR 3. CATHODE<br>STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14:<br>PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE<br>2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE<br>3. CATHODE 3. GATE 3. CATHODE−ANODE 3. ANODE 3. GATE 3. ANODE<br>STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:<br>PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE<br>2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE<br>3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE−ANODE 3. GATE<br>STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26:<br>PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE<br>2. SOURCE 2. OUTPUT 2. ANODE 2. DRAIN 2. CATHODE 2. ANODE<br>3. DRAIN 3. INPUT 3. CATHODE 3. SOURCE 3. GATE 3. NO CONNECTION<br>STYLE 27: STYLE 28:<br>PIN 1. CATHODE PIN 1. ANODE<br> 2. CATHODE 2. ANODE<br> 3. CATHODE 3. ANODE<br>**----- End of picture text -----**<br> **==> picture [493 x 37] intentionally omitted <==** **----- Start of picture text -----**<br> Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42226B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.<br>DESCRIPTION: SOT−23 (TO−236) 2.90x1.30x1.00 1.90P PAGE 2 OF 2<br>**----- End of picture text -----**<br> **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **ADDITIONAL INFORMATION** **TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales **==> picture [232 x 43] intentionally omitted <==**
Updated at March 24, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
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We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
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