SZMMBZ15VDLT3G

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## Zener Diodes, 40 Watt Peak Power 

## **SOT-23 Dual Common Cathode Zeners** MMBZxxVxL, SZMMBZxxVxL Series 

These dual monolithic silicon zener diodes are designed for applications requiring protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common cathode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium. 

## **Specification Features:** 

- SOT-23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration 

- Standard Zener Breakdown Voltage Range − 15 V, 27 V, 39 V 

- Peak Power − 40 W @ 1.0 ms (Bidirectional), per Figure 5 Waveform 

- ESD Rating of Class 3B (exceeding 16 kV) per the Human Body Model 

- ESD Rating of IEC61000-4-2 Level 4,  30 kV Contact Discharge 

- Low Leakage < 100 nA 

- Flammability Rating: UL 94 V-O 

- SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 

- These are Pb-Free Devices 

## **Mechanical Characteristics:** 

> **CASE:** Void-free, transfer-molded, thermosetting plastic case **FINISH:** Corrosion resistant finish, easily solderable **MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:** 

260  C for 10 Seconds 

**SOT-23 CASE 318 STYLE 9** 

ANODE 1 3 CATHODE ANODE 2 ~~at~~ **MARKING DIAGRAM** XXX M 1 a XXX = 15D, 27C or 39C M = Date Code = Pb-Free Package 

(Note: Microdot may be in either location) 

## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|MMBZ15VDLT1G,<br>SZMMBZ15VDLT1G|SOT-23<br>(Pb-Free)|3,000 /<br>Tape & Reel|
|MMBZ15VDLT3G,<br>SZMMBZ15VDLT3G|SOT-23<br>(Pb-Free)|10,000 /<br>Tape & Reel|
|MMBZxxVCLT1G,<br>SZMMBZxxVCLT1G|SOT-23<br>(Pb-Free)|3,000 /<br>Tape & Reel|
|MMBZxxVCLT3G,<br>SZMMBZxxVCLT3G|SOT-23<br>(Pb-Free)|10,000 /<br>Tape & Reel|



- For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

NOTE: Some of the devices on this data sheet have been **DISCONTINUED** . Please refer to the table on page 3. 

Publication Order Number: **MMBZ15VDLT1/D** 

**1** 

 Semiconductor Components Industries, LLC, 1994 **October, 2025 − Rev. 18** 

**MMBZxxVxL, SZMMBZxxVxL Series** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**|||||||||||
|---|---|---|---|---|---|---|---|---|---|---|
|**Rating**||||**Symbol**|||**Value**||**Unit**||
|Peak Power Dissipation @ 1.0 ms (Note 1) @ TL 25C||||Ppk|||40||Watts||
|Total Power Dissipation on FR-5 Board (Note 2)||||PD|||||||
|@ TA= 25C|||||||225||mW||
|Derate above 25C|||||||1.8||mW/C||
|Thermal Resistance Junction-to-Ambient||||R JA|||556||C/W||
|Total Power Dissipation on Alumina Substrate (Note 3)||||PD|||||||
|@ TA= 25C|||||||300||mW||
|Derate above 25C|||||||2.4||mW/C||
|Thermal Resistance Junction-to-Ambient<br>R JA<br>417<br>C/W<br>Junction and Storage Temperature Range<br>TJ, Tstg<br>−55 to +150<br>C<br>Lead Solder Temperature − Maximum (10 Second Duration)<br>TL<br>260<br>C<br>Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality<br>should not be assumed, damage may occur and reliability may be affected.<br>1. Nonrepetitive current pulse per Figure 5 and derate above TA= 25C per Figure 6.<br>2. FR-5 = 1.0 x 0.75 x 0.62 in.<br>3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina<br>**ELECTRICAL CHARACTERISTICS**<br>(TA= 25C unless otherwise noted)<br>**UNIDIRECTIONAL**(Circuit tied to Pins 1 and 3 or 2 and 3)<br>**Symbol**<br>**Parameter**<br>IPP<br>Maximum Reverse Peak Pulse Current<br>VC<br>Clamping Voltage @ IPP<br>VRWM<br>Working Peak Reverse Voltage<br>IR<br>Maximum Reverse Leakage Current @ VRWM<br>VBR<br>Breakdown Voltage @ IT<br>IT<br>Test Current<br>VBR<br>Maximum Temperature Coefficient of VBR<br>IF<br>Forward Current<br>VF<br>Forward Voltage @ IF<br>**Uni−Directional Zener**<br>IPP<br>IF<br>**V**<br>**I**<br>IR<br>IT<br>VRWM<br>VC VBR<br>VF<br>~~=7~~|||||||||||



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## **MMBZxxVxL, SZMMBZxxVxL Series** 

**ELECTRICAL CHARACTERISTICS** (TA = 25 C unless otherwise noted) **UNIDIRECTIONAL** (Circuit tied to Pins 1 and 3 or Pins 2 and 3) 

**(VF = 0.9 V Max @ IF = 10 mA) Breakdown Voltage VC @ IPP** (Note 6) **Device VRWM IR @ VRWM VBR** (Note 5) **(V) @ IT VC IPP VBR Device* Marking Volts nA Min Nom Max mA V A mV/ C** ~~aa ee——— ee ee po~~ MMBZ15VDLT1G/T3G 15D 12.8 100 14.3 15 15.8 1.0 21.2 1.9 12 **(VF = 1.1 V Max @ IF = 200 mA) Breakdown Voltage VC @ IPP** (Note 6) **Device VRWM IR @ VRWM VBR** (Note 5) **(V) @ IT VC IPP VBR Device* Marking Volts nA Min Nom Max mA V A mV/ C** ~~=a a ee ee pO~~ MMBZ27VCLT1G/T3G 27C 22 50 25.65 27 28.35 1.0 38 1.0 26 **DISCONTINUED** (Note 4) MMBZ39VCLT1G/T3G 39C 31.2 50 37.05 39 40.95 1.0 55 0.76 35.3 ~~Po~~ Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

- Include SZ-prefix devices where applicable. 

4. **DISCONTINUED:** These devices are not available. Please contact your **onsemi** representative for information. The most current information on these devices may be available on www.onsemi.com. 

5. VBR measured at pulse test current IT at an ambient temperature of 25 C. 

6. Surge current waveform per Figure 5 and derate per Figure 6 

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**MMBZxxVxL, SZMMBZxxVxL Series** 

## **TYPICAL CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
MMBZ15VDL, SZMMBZ15VDL MMBZ27VCL, SZMMBZ27VCL<br>17 29<br>BIDIRECTIONAL<br>BIDIRECTIONAL<br>16 28<br>15 Ss 27 BT<br>= |<br>14 TSTa 26 LK<br>UNIDIRECTIONAL<br>13 TK 25<br>TEMPERATURE (  C) TEMPERATURE (  C)<br>Figure 1. Typical Breakdown Voltage Figure 2. Typical Breakdown Voltage<br>versus Temperature versus Temperature<br>1000 300<br>250<br>100<br>SSSSS= (NII ALUMINA SUBSTRATE<br>200<br>10<br>150<br>SSS = NN<br>1<br>100<br>FR-5 BOARD<br>0.1<br>50<br>es ee re Ge<br>0.01 0<br>Se 0 LI 25  NN 50 75 100 125 150 175<br>TEMPERATURE (  C) TEMPERATURE (  C)<br>Figure 3. Typical Leakage Current Figure 4. Steady State Power Derating Curve<br>(VBR @ I T)<br>(VBR @ I T)<br>BREAKDOWN VOLTAGE (VOLTS)<br>BREAKDOWN VOLTAGE (VOLTS)<br>IR (nA)<br>PD , POWER DISSIPATION (mW)<br>**----- End of picture text -----**<br>


TEMPERATURE (  C) **Figure 3. Typical Leakage Current versus Temperature** 

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100<br>PULSE WIDTH (tP) IS DEFINED<br>Pt t r   10 s APEAK CURRENT DECAYS TOS THAT POINT WHERE THE 90 ON<br>80<br>100 PP 50% OF IPP.<br>70<br>“Eee<br>60<br>ee 7 6 ARSSEEEEE<br>=e IPP Fer 4 50 PoPot | ~N fT ff<br>2<br>40<br>50<br>Ngeea [SN] 30 PotEK| | UK<br>t P 20<br>= 10 p of | ft TN fT<br>0 a as a a ee<br>0 1 2 3 4 00 25 50 75 100 125 150 175 200<br>t, TIME (ms) TA, AMBIENT TEMPERATURE (  C)<br>Figure 5. Pulse Waveform Figure 6. Pulse Derating Curve<br>www.onsemi.com Share Feedback<br>a 4 , Your Opinion Matters ne<br>C<br><br>VALUE (%)<br>OR CURRENT @ TA = 25<br>PEAK PULSE DERATING IN % OF PEAK POWER<br>**----- End of picture text -----**<br>


**MMBZxxVxL, SZMMBZxxVxL Series** 

## **TYPICAL APPLICATIONS** 

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VBatt<br>| [|] —--—-—-——<br>| pom Single Wire s|<br>| | | CAN Transceiver<br>47 H " Bus | |<br>||<br>| | | Loss of |<br>| RLoad | Ground |<br>_ 9.09 k  1% Protection<br>| || | | | r| | aa * | | CLoad Q Load |L————|————4 Circuit |<br>220 pF 10% GND<br>Lo d Lote 4 d<br>| | | | |<br>ECU Connector<br>**----- End of picture text -----**<br>


- ESD Protection − MMBZ27VCL or equivalent. May be located in each ECU (CLoad needs to be reduced accordingly) or at a central point near the DLC. 

**Figure 7. Single Wire CAN Network** 

Figure  is the recommended solution for transient EMI/ESD protection. This circuit is shown in the Society of Automotive Engineers February, 2000 J2411 “Single Wire CAN Network for Vehicle Applications” specification (Figure 6). Note: the dual common anode zener configuration shown above is electrically equivalent to a dual common cathode zener configuration. 

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**5** 

**MMBZxxVxL, SZMMBZxxVxL Series** 

## **REVISION HISTORY** 

|**Revision**|**Description of Changes**|**Date**|
|---|---|---|
|18|Rebranded the Data Sheet to**onsemi**format.<br>MMBZ39VCLT3G, MMBZ39VCLT1G OPNs Marked as Discontinued.|10/15/2025|



This document has undergone updates prior to the inclusion of this revision history table. The changes tracked here only reflect updates made on the noted approval dates. 

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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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SOT−23 (TO−236) 2.90x1.30x1.00 1.90P<br>CASE 318<br>ISSUE AU<br>DATE 14 AUG 2024<br>**----- End of picture text -----**<br>


**SCALE 4:1** 

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GENERIC<br>MARKING DIAGRAM*<br>XXXM �<br>�<br>1<br>XXX = Specific Device Code<br>M = Date Code<br>� = Pb−Free Package<br>**----- End of picture text -----**<br>


*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. 

## **STYLES ON PAGE 2** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42226B** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: SOT−23 (TO−236) 2.90x1.30x1.00 1.90P PAGE 1 OF 2** 

**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

DATE 14 AUG 2024 

## **SOT−23 (TO−236) 2.90x1.30x1.00 1.90P** CASE 318 ISSUE AU 

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STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8:<br>CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE<br>2. EMITTER 2. BASE 2. NO CONNECTION<br>3. COLLECTOR 3. COLLECTOR 3. CATHODE<br>STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14:<br>PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE<br>2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE<br>3. CATHODE 3. GATE 3. CATHODE−ANODE 3. ANODE 3. GATE 3. ANODE<br>STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:<br>PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE<br>2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE<br>3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE−ANODE 3. GATE<br>STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26:<br>PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE<br>2. SOURCE 2. OUTPUT 2. ANODE  2. DRAIN  2. CATHODE  2. ANODE<br>3. DRAIN 3. INPUT 3. CATHODE  3. SOURCE  3. GATE  3. NO CONNECTION<br>STYLE 27: STYLE 28:<br>PIN 1. CATHODE PIN 1. ANODE<br> 2. CATHODE  2. ANODE<br> 3. CATHODE  3. ANODE<br>**----- End of picture text -----**<br>


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Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42226B Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: SOT−23 (TO−236) 2.90x1.30x1.00 1.90P PAGE 2 OF 2<br>**----- End of picture text -----**<br>


**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

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