SVD5867NLT4G

## NVD5867NL Power MOSFET **60 V, 22 A, 39 m Single N−Channel** | 

## **Features** 

- Low R to Minimize Conduction Losses DS(on) 

- High Current Capability 

- Avalanche Energy Specified 

- AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **www.onsemi.com** 

**==> picture [190 x 33] intentionally omitted <==**

**----- Start of picture text -----**<br>
ee V(BR)DSS ee RDS(on) ee ID<br>39 m  @ 10 V<br>60 V 22 A<br>**----- End of picture text -----**<br>


50 m @ 4.5 V 

**MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) 

|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise noted)|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise noted)||||
|---|---|---|---|---|
|**Parameter**<br>**Symbol**<br>**Value**<br>**Unit**<br>Drain−to−Source Voltage<br>VDSS<br>60<br>V<br>Gate−to−Source Voltage<br>VGS<br>20<br>V<br>Continuous Drain Cur-<br>rent R JC(Notes 1 & 3)<br>Steady<br>State<br>TC= 25°C<br>ID<br>22<br>A<br>TC= 100°C<br>16<br>Power Dissipation R JC<br>(Note 1)<br>TC= 25°C<br>PD<br>43<br>W<br>TC= 100°C<br>21<br>Continuous Drain Cur-<br>rent R JA(Notes 1, 2 &<br>3)<br>Steady<br>State<br>TA= 25°C<br>ID<br>6.0<br>A<br>TA= 100°C<br>4.0<br>Power Dissipation R JA<br>(Notes 1 & 2)<br>TA= 25°C<br>PD<br>3.3<br>W<br>TA= 100°C<br>1.7<br>Pulsed Drain Current<br>TA= 25°C, tp= 10 s<br>IDM<br>85<br>A<br>Current Limited by<br>Package (Note 3)<br>TA= 25°C<br>IDmaxpkg<br>30<br>A<br>~~es~~<br>~~en Ge~~<br>~~Ge~~<br>~~es~~<br>~~es Ge~~<br>~~es~~<br>~~Ge ec~~<br>~~pf~~<br>~~a~~<br>~~——)~~<br>~~Po~~<br>~~UESO~~<br>~~ee~~<br>~~er oe~~<br>~~es~~<br>~~ee Ge~~<br>~~a~~||G|**DPAK**<br>**CASE 369AA**<br>**STYLE 2**<br>1 2<br>3<br>4<br>S<br>**N−CHANNEL MOSFET**<br>D<br>~~2~~<br>~~2~~||
|Operating Junction and Storage Temperature<br>TJ, Tstg<br>−55 to<br>175<br>°C<br>Source Current (Body Diode)<br>IS<br>36<br>A<br>Single Pulse Drain−to−Source Avalanche<br>Energy (TJ= 25°C, VDD= 50 V, VGS= 10 V,<br>IL(pk)= 19 A, L = 0.1 mH, RG= 25 )<br>EAS<br>18<br>mJ<br>Lead Temperature for Soldering Purposes<br>(1/8″from case for 10 s)<br>TL<br>260<br>°C<br>~~pt~~<br>~~**P**e TE~~<br>~~o~~||**MARKING DIAGRAM**<br>**& PIN ASSIGNMENT**<br>2<br>4<br>Drain<br>AYWW<br>V58<br>67LG<br>~~=~~|||
|Stresses exceeding those listed in the Maximum Ratings table may damage the|||1<br>Drain 3||
|device. If any of these limits are exceeded, device functionality should not be|||Gate<br>Source||
|assumed, damage may occur and reliability may be affected.||A|= Assembly Location*|= Assembly Location*|



**==> picture [107 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
MARKING DIAGRAM<br>& PIN ASSIGNMENT<br>4<br>Drain<br>= 2<br>1 Drain 3<br>Gate Source<br>A = Assembly Location*<br>Y = Year<br>WW = Work Week<br>V5867L = Device Code<br>G = Pb−Free Package<br>AYWW V58 67LG<br>**----- End of picture text -----**<br>


## **THERMAL RESISTANCE MAXIMUM RATINGS** 

|**Parameter**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|
|Junction−to−Case (Drain) (Note 1)|R JC|3.5|°C/W|
|Junction−to−Ambient − SteadyState(Note 2)|R JA|45||



* The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. 

1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 

2. Surface−mounted on FR4 board using a 650 mm[2] , 2 oz. Cu pad. 

3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. 

Publication Order Number: **NVD5867NL/D** 

**1** 

© Semiconductor Components Industries, LLC, 2016 **August, 2016 − Rev. 4** 

**NVD5867NL** 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS **(TJ|= 25°C unless|otherwise noted)|otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID=|250�A|60|||V|
|Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/TJ||||60||mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,<br>VDS= 60 V|TJ= 25°C|||1.0|�A|
||||TJ= 125°C|||100||
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=±20 V||||±100|nA|
|**ON CHARACTERISTICS**(Note 4)||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 250�A||1.5|1.8|2.5|V|
|Negative Threshold Temperature Coefficient|VGS(TH)/TJ||||5.2||mV/°C|
|Drain−to−Source On Resistance|RDS(on)|VGS= 10 V, ID= 11 A|||26|39|m�|
|||VGS= 4.5 V, ID= 11 A|||33|50||
|Forward Transconductance|gFS|VDS= 15 V, ID= 11 A|||8.0||S|
|**CHARGES, CAPACITANCES AND GATE RESISTANCES**||||||||
|Input Capacitance|Ciss|VGS= 0 V, f = 1.0 MHz,<br>VDS= 25 V|||675||pF|
|Output Capacitance|Coss||||68|||
|Reverse Transfer Capacitance|Crss||||47|||
|Total Gate Charge|QG(TOT)|VGS= 10 V, VDS= 48 V,<br>ID= 22 A|||15||nC|
|Threshold Gate Charge|QG(TH)||||1.0|||
|Gate−to−Source Charge|QGS||||2.2|||
|Gate−to−Drain Charge|QGD||||4.3|||
|Total Gate Charge|QG(TOT)|VGS= 4.5 V, VDS= 48 V,<br>ID= 22 A|||7.6||nC|
|Gate Resistance|RG||||1.3||�|
|**SWITCHING CHARACTERISTICS**(Note 5)||||||||
|Turn−On Delay Time|td(on)|VGS= 10 V, VDD= 48 V,<br>ID= 22 A, RG= 2.5�|||6.5||ns|
|Rise Time|tr||||12.6|||
|Turn−Off Delay Time|td(off)||||18.2|||
|Fall Time|tf||||2.4|||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|VGS= 0 V,<br>IS= 10 A|TJ= 25°C||0.87|1.2|V|
||||TJ= 125°C||0.78|||
|Reverse Recovery Time|tRR|VGS= 0 V, dIs/dt<br>IS= 22|= 100 A/�s,<br>A||17||ns|
|Charge Time|ta||||13|||
|Discharge Time|tb||||4.0|||
|Reverse Recovery Charge|QRR||||12||nC|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2%. 

5. Switching characteristics are independent of operating junction temperatures. 

**www.onsemi.com** 

**2** 

**NVD5867NL** 

## **TYPICAL PERFORMANCE CURVES** 

**==> picture [490 x 633] intentionally omitted <==**

**----- Start of picture text -----**<br>
40 40<br>10V 4.5 V TJ = 25 ° C VDS ≥  10 V<br>35 35<br>4 V<br>30 30<br>3.8 V<br>25 25<br>3.6 V<br>20 20<br>3.4 V<br>15 15 TJ = 125 ° C<br>3.2 V<br>10 3.0 V 10 TJ = 25 ° C<br>5 5<br>2.8 V TJ = −55 ° C<br>0 0<br>0 1 2 3 4 5 2 3 4 5<br>VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>0.060 0.040<br>ID = 22 A TJ = 25 ° C<br>TJ = 25 ° C<br>0.050 0.035 VGS = 4.5 V<br>0.040 0.030<br>VGS = 10 V<br>0.030 0.025<br>0.020 0.020<br>3 4 5 6 7 8 9 10 5 10 15 20<br>VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS)<br>Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and<br>Voltage Gate Voltage<br>2.4 10000<br>2.2 ID = 22 A VGS = 0 V<br>VGS = 10 V<br>2.0 TJ = 150 ° C<br>1.8 1000<br>1.6<br>1.4<br>1.2 100 TJ = 125 ° C<br>1.0<br>0.8<br>0.6 10<br>−50 −25 0 25 50 75 100 125 150 175 10 20 30 40 50 60<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)<br>Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current<br>Temperature vs. Drain Voltage<br>, DRAIN CURRENT (AMPS) , DRAIN CURRENT (AMPS)<br>ID ID<br>) � ) �<br>, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (<br>DS(on) DS(on)<br>R R<br>, LEAKAGE (nA)<br>(NORMALIZED) IDSS<br>, DRAIN−TO−SOURCE RESISTANCE<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**www.onsemi.com** 

**3** 

**NVD5867NL** 

## **TYPICAL PERFORMANCE CURVES** 

**==> picture [491 x 606] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 10<br>900 VGS = 0 V Q T<br>TJ = 25 ° C<br>800 8<br>700 Ciss VGS<br>600 6<br>500<br>400 4 Qgs Qgd<br>300<br>200100 Coss 2 VIDDS = 22 A = 48 V<br>0 Crss 0 TJ = 25 ° C<br>0 10 20 30 40 50 60 0 5 10 15<br>DRAIN−TO−SOURCE VOLTAGE (VOLTS) QG, TOTAL GATE CHARGE (nC)<br>Figure 7. Capacitance Variation Figure 8. Gate−To−Source Voltage vs.<br>Total Charge<br>1000 20<br>VDD = 48 V VGS = 0 V<br>VIDGS = 22 A = 10 V TJ = 25 ° C<br>15<br>100<br>tf td(off)<br>tr 10<br>10 td(on)<br>5<br>1 0<br>1 10 100 0.5 0.6 0.7 0.8 0.9 1.0<br>RG, GATE RESISTANCE (OHMS) VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)<br>Figure 9. Resistive Switching Time Figure 10. Diode Forward Voltage vs. Current<br>Variation vs. Gate Resistance<br>100 20<br>ID = 19 A<br>10  � s<br>15<br>10 100  � s<br>1 ms<br>10<br>VGS = 10 V  10 ms<br>1 SINGLE PULSE<br>TC = 25 ° C dc<br>5<br>RDS(on) LIMIT<br>THERMAL LIMIT<br>PACKAGE LIMIT<br>0.1 0<br>1 10 100 25 50 75 100 125 150 175<br>VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE ( ° C)<br>C, CAPACITANCE (pF)<br>VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)<br>t, TIME (ns)<br>IS, SOURCE CURRENT (AMPS)<br>ID, DRAIN CURRENT (AMPS)<br>AVALANCHE ENERGY (mJ)<br>EAS, SINGLE PULSE DRAIN−TO−SOURCE<br>**----- End of picture text -----**<br>


**Figure 11. Maximum Rated Forward Biased Safe Operating Area** 

**Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature** 

**www.onsemi.com** 

**4** 

**NVD5867NL** 

## **TYPICAL PERFORMANCE CURVES** 

**==> picture [493 x 166] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>D = 0.5<br>1.0 0.2<br>0.1<br>0.05<br>0.02<br>0.1<br>0.01<br>SINGLE PULSE<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1<br>t, PULSE TIME (s)<br>C/W) EFFECTIVE TRANSIENT<br> ( ° THERMAL RESISTANCE<br>JC(t)<br>�<br>R<br>**----- End of picture text -----**<br>


**Figure 13. Thermal Response** 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**|||
|---|---|---|
|**Order Number**|**Package**|**Shipping**†|
|NVD5867NLT4G|DPAK<br>(Pb−Free)|2500 / Tape & Reel|
|SVD5867NLT4G|DPAK<br>(Pb−Free)|2500 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

**www.onsemi.com** 

**5** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**==> picture [480 x 513] intentionally omitted <==**

**----- Start of picture text -----**<br>
4 DPAK (SINGLE GUAGE)<br>CASE 369AA−01<br>ISSUE B<br>1 > [2]<br>DATE 03 JUN 2010<br>3<br>SCALE 1:1 NOTES:<br>C 1. DIMENSIONING AND TOLERANCING PER ASME<br>A Y14.5M, 1994.<br>E A 2.3. CONTROLLING DIMENSION: INCHES.THERMAL PAD CONTOUR OPTIONAL WITHIN DI-<br>MENSIONS b3, L3 and Z.<br>b3 B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD<br>FLASH, PROTRUSIONS, OR BURRS. MOLD<br>FLASH, PROTRUSIONS, OR GATE BURRS SHALL<br>NOT EXCEED 0.006 INCHES PER SIDE.<br>L3 i 4 Z 5. DIMENSIONS D AND E ARE DETERMINED AT THEOUTERMOST EXTREMES OF THE PLASTIC BODY.<br>1 2 3 D DETAIL A H 6. DATUMS A AND B ARE DETERMINED AT DATUMPLANE H.<br>INCHES MILLIMETERS<br>DIM MIN MAX MIN MAX<br>L4 A 0.086 0.094 2.18 2.38<br>b2 A1 0.000 0.005 0.00 0.13<br>b c b 0.025 0.035 0.63 0.89<br>b2 0.030 0.045 0.76 1.14<br>e e 0.005 (0.13) y M C H ee b3 0.180 0.215 4.57 5.46<br>c 0.018 0.024 0.46 0.61<br>L2 [GAUGE] PLANE C SEATINGPLANE c2D 0.0180.235 0.0240.245 0.465.97 0.616.22<br>E 0.250 0.265 6.35 6.73<br>e 0.090 BSC 2.29 BSC<br>H 0.370 0.410 9.40 10.41<br>L A1 L 0.055 0.070 1.40 1.78<br>L1 L1 0.108 REF 2.74 REF<br>L2 0.020 BSC 0.51 BSC<br>DETAIL A L3 0.035 0.050 0.89 1.27<br>ROTATED 9  CW L4 −−− 0.040 −−− 1.01<br>Z 0.155 −−− 3.93 −−−<br>STYLE 1: STYLE 2: STYLE 3: STYLE 4:<br>PIN 1.2. COLLECTORBASE PIN 1.2. DRAINGATE PIN 1.2. CATHODEANODE PIN 1.2. ANODECATHODE GENERIC<br>3. EMITTER 3. SOURCE 3. ANODE 3. GATE MARKING DIAGRAM*<br>4. COLLECTOR 4. DRAIN 4. CATHODE 4. ANODE<br>STYLE 5: STYLE 6: STYLE 7:<br>PIN 1. GATE PIN 1. MT1 PIN 1. GATE XXXXXXG YWW<br>2. ANODE 2. MT2 2. COLLECTOR<br>3. CATHODE 3. GATE 3. EMITTER ALYWW XXX<br>4. ANODE 4. MT2 4. COLLECTOR XXXXXG<br>SOLDERING FOOTPRINT* AD<br>IC Discrete<br>6.20 3.00<br>0.244 0.118 XXXXXX = Device Code<br>2.58 A = Assembly Location<br>0.102 L = Wafer Lot<br>Y =  Year<br>5.80 WW = Work Week<br>1.60 6.17<br>0.228 0.063 0.243 G = Pb−Free Package<br>*This information is generic. Please refer<br>jae<br>to device data sheet for actual part<br>marking.<br>SCALE 3:1 mm<br>inches<br>**----- End of picture text -----**<br>


- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON13126D** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: DPAK (SINGLE GAUGE) PAGE 1 OF 1** ~~ee~~ ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi’s** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative 

◊ 

**==> picture [232 x 43] intentionally omitted <==**