SURS8360T3G.
Fast / Ultrafast Diode, 600 V, 3 A, Single, 1.25 V, 75 ns, 100 A
- Manufacturer: ONSEMI
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.271 € |
| Current stock | 10+ |
| Lead time | 30 days |
## MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G Surface Mount Ultrafast Power Rectifiers **www.onsemi.com** This series employs the state−of−the−art epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for high **ULTRAFAST** voltage, high frequency rectification, or as free wheeling and **RECTIFIERS** protection diodes, in surface mount applications where compact size **3.0 AMPERES** and weight are critical to the system. **200−600 VOLTS Features** • Small Compact Surface Mountable Package with J−Bend Leads • Rectangular Package for Automated Handling • High Temperature Glass Passivated Junction **SMC** • Low Forward Voltage Drop **CASE 403** (0.71 to 1.05 Volts Max @ 3.0 A, TJ = 150°C) • SURS8 Prefix for Automotive and Other Applications Requiring **MARKING DIAGRAM** Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable AYWW • These are Pb−Free Devices U3x **Mechanical Characteristics** • Case: Epoxy, Molded U3 = Specific Device Code • Epoxy Meets UL 94 V−0 @ 0.125 in x = D (320T3) = G (340T3) • Weight: 217 mg (approximately) = J (360T3) • Finish: All External Surfaces Corrosion Resistant and Terminal A* = Assembly Location Leads are Readily Solderable Y = Year WW= Work Week • Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds *Assembly Location code can ~~[:]~~ be on top or bottom of unit **SMC CASE 403 MARKING DIAGRAM** AYWW U3x U3 = Specific Device Code x = D (320T3) = G (340T3) = J (360T3) A* = Assembly Location Y = Year WW= Work Week *Assembly Location code can - Shipped in 16 mm Tape and Reel, 2500 units per reel - Polarity: Notch in Plastic Body Indicates Cathode Lead - Device Meets MSL1 Requirements - ESD Ratings: - ♦ Machine Model, C (> 400 V) - ♦ Human Body Model, 3B (> 8 kV) ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**†| |---|---|---| |MURS320T3G|SMC<br>(Pb−Free)|2,500 /<br>Tape & Reel| |SURS8320T3G|SMC<br>(Pb−Free)|2,500 /<br>Tape & Reel| |MURS340T3G|SMC<br>(Pb−Free)|2,500 /<br>Tape & Reel| |SURS8340T3G|SMC<br>(Pb−Free)|2,500 /<br>Tape & Reel| |MURS360T3G|SMC<br>(Pb−Free)|2,500 /<br>Tape & Reel| |SURS8360T3G|SMC<br>(Pb−Free)|2,500 /<br>Tape & Reel| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2016 **November, 2016 − Rev. 14** **MURS320T3/D** ## **MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G** ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||||| |---|---|---|---|---|---| |**Rating**|**Symbol**|**MURS320T3G/**<br>**SURS8320T3G**|**MURS340T3G/**<br>**SURS8340T3G**|**MURS360T3G/**<br>**SURS8360T3G**|**Unit**| |Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|200|400|600|V| |Average Rectified Forward Current|IF(AV)|3.0 @ TL= 140°C<br>4.0 @ TL= 130°C|3.0 @ TL= 130°C<br>4.0 @ TL= 115°C|3.0 @ TL= 130°C<br>4.0 @ TL= 115°C|A| |Non−Repetitive Peak Surge Current<br>(Surge applied at rated load conditions halfwave,<br>single phase, 60 Hz)|IFSM|100|||A| |Operating Junction Temperature|TJ|�65 to +175|||°C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||||| |---|---|---|---|---|---| |Thermal Resistance, Junction−to−Lead|R�JL||11||°C/W| |**ELECTRICAL CHARACTERISTICS**|||||| |Maximum Instantaneous Forward Voltage (Note 1)<br>(iF= 3.0 A, TJ= 25°C)<br>(iF= 4.0 A, TJ= 25°C)<br>(iF= 3.0 A, TJ= 150°C)|vF|0.875<br>0.89<br>0.71|1.25<br>1.28<br>1.05|1.25<br>1.28<br>1.05|V| |Maximum Instantaneous Reverse Current (Note 1)<br>(Rated dc Voltage, TJ= 25°C)<br>(Rated dc Voltage, TJ= 150°C)|iR|5.0<br>150|10<br>250|10<br>250|�A| |Maximum Reverse Recovery Time<br>(iF= 1.0 A, di/dt = 50 A/�s)<br>(iF= 0.5 A, iR= 1.0 A, IRECto 0.25 A)|trr|35<br>25|75<br>50|75<br>50|ns| |Maximum Forward Recovery Time<br>(iF= 1.0 A, di/dt = 100 A/�s, Recovery to 1.0 V)|tfr|25|50|50|ns| |Typical Peak Reverse Recovery Current<br>(IF= 1.0 A, di/dt = 50 A/�s)|IRM|0.8|||A| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. **www.onsemi.com** **2** **MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G MURS320T3G/SURS8320T3G** **==> picture [492 x 612] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>40 TJ = 175°C<br>5.0 20<br>8.0<br>4.0<br>2.0 TJ = 100°C<br>0.8<br>3.0 0.4<br>TJ = 175°C 0.2<br>100°C 0.08<br>2.0 0.04 TJ = 25°C<br>0.02<br>0.008<br>0.004<br>25°C 0.002<br>0 20 40 60 80 100 120 140 160 180 200<br>1.0<br>VR, REVERSE VOLTAGE (VOLTS)<br>Figure 2. Typical Reverse Current*<br>0.7 * The curves shown are typical for the highest voltage device in the<br>voltage grouping. Typical reverse current for lower voltage selections<br>can be estimated from these same curves if VR is sufficiently below<br>0.5 rated VR.<br>10<br>9.0<br>8.0 I<br>0.3 (CAPACITIVE�LOAD) PK � 20 5.0<br>7.0 I<br>AV 10<br>6.0<br>0.2 5.0<br>4.0 dc<br>3.0<br>2.0 SQUARE WAVE<br>0.1 1.0<br>0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2<br>0<br>vF, INSTANTANEOUS VOLTAGE (VOLTS) 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>Figure 1. Typical Forward Voltage IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>Figure 3. Power Dissipation<br>10 200<br>RATED VOLTAGE APPLIED<br>9.0 R�JL = 11°C/W TYPICAL CAPACITANCE AT 0 V = 135 pF<br>8.0 TJ = 175 ° C 100<br>7.0 80<br>6.0 60<br>5.0<br>40<br>4.0<br>30<br>3.0 dc<br>20<br>2.0<br>1.0 SQUARE WAVE<br>0 10<br>90 100 110 120 130 140 150 160 170 180 190 0 10 20 30 40 50 60 70 80 90 100<br>TC, CASE TEMPERATURE (°C) VR, REVERSE VOLTAGE (VOLTS)<br>�<br>, REVERSE CURRENT ( A)<br>, INSTANTANEOUS FORWARD CURRENT (A) IR<br>iF<br>, AVERAGE POWER DISSIPATION (W))<br>F(AV)<br>P<br>C, CAPACITANCE (pF)<br>, AVERAGE FORWARD CURRENT (A)<br>IF(AV)<br>**----- End of picture text -----**<br> **Figure 4. Current Derating, Case** **Figure 5. Typical Capacitance** **www.onsemi.com** **3** **MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G** **==> picture [490 x 413] intentionally omitted <==** **----- Start of picture text -----**<br> 400<br>200<br>5.0 80 TJ = 175°C<br>40<br>20<br>3.0 8.0<br>TJ = 175°C 100°C 4.0 T J = 100°C<br>2.0<br>2.0<br>0.8<br>0.4<br>0.2<br>25°C 0.08 T J = 25°C<br>1.0 0.04<br>0.02<br>0.008<br>0.7<br>0.004<br>0 100 200 300 400 500 600 700<br>0.5 VR, REVERSE VOLTAGE (V)<br>Figure 7. Typical Reverse Current*<br>0.3 * The curves shown are typical for the highest voltage device in the<br>voltage grouping. Typical reverse current for lower voltage selections<br>can be estimated from these same curves if VR is sufficiently below<br>0.2 rated VR.<br>10<br>9.0<br>0.1<br>8.0<br>7.0<br>0.07 SQUARE WAVE<br>6.0<br>dc<br>0.05 5.0 (CAPACITIVE LOADS)<br>I<br>4.0 PK � 20 10 5.0<br>I<br>3.0 AV<br>0.03<br>2.0<br>0.02 1.0<br>0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3<br>0<br>vF, INSTANTANEOUS VOLTAGE (VOLTS) 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>Figure 6. Typical Forward Voltage IF(AV), AVERAGE FORWARD CURRENT (A)<br>�<br>, REVERSE CURRENT ( A)<br>, INSTANTANEOUS FORWARD CURRENT (A) IR<br>iF<br>, AVERAGE POWER DISSIPATION (WATTS)<br>F(AV)<br>P<br>**----- End of picture text -----**<br> **Figure 6. Typical Forward Voltage** **Figure 8. Power Dissipation** **==> picture [491 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 10 100<br>9.0 90<br>8.0 80 TYPICAL CAPACITANCE AT 0 V = 75 pF<br>7.0 70<br>6.0 60<br>5.0 50<br>4.0 40<br>dc<br>3.0 30<br>2.0 SQUARE WAVE 20<br>1.0 10<br>0 0<br>70 80 90 100 110 120 130 140 150 160 170 0 10 20 30 40 50 60 70 80 90 100<br>TC, CASE TEMPERATURE (°C) VR, REVERSE VOLTAGE (V)<br>C, CAPACITANCE (pF)<br>, AVERAGE FORWARD CURRENT (A)<br>IF(AV)<br>**----- End of picture text -----**<br> **Figure 9. Current Derating, Case** **Figure 10. Typical Capacitance** **www.onsemi.com** **4** **MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G** **MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G** **==> picture [272 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>1000<br>100<br>10<br>10 100 1,000 10,000<br>tp, SQUARE WAVE PULSE DURATION ( � s)<br>CURRENT (A)<br>, NON−REPETITIVE SURGE<br>IFSM<br>**----- End of picture text -----**<br> **Figure 11. Typical Non−Repetitive Surge Current** *Typical performance based on a limited sample size. ON Semiconductor does not guarantee ratings not listed in the Maximum Ratings table. **www.onsemi.com** **5** **MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G PACKAGE DIMENSIONS** **SMC** CASE 403−03 ISSUE E - NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. **==> picture [447 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> HE 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: INCH.<br>E 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.<br>4. 403-01 THRU -02 OBSOLETE, NEW STANDARD 403-03.<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>A 1.90 2.13 2.41 0.075 0.084 0.095<br>b D A1 0.05 0.10 0.15 0.002 0.004 0.006<br>b 2.92 3.00 3.07 0.115 0.118 0.121<br>c 0.15 0.23 0.30 0.006 0.009 0.012<br>D 5.59 5.84 6.10 0.220 0.230 0.240<br>E 6.60 6.86 7.11 0.260 0.270 0.280<br>H E 7.75 7.94 8.13 0.305 0.313 0.320<br>L 0.76 1.02 1.27 0.030 0.040 0.050<br>L1 0.51 REF 0.020 REF<br>2 d, 4 ——————————E<br>A<br>c A1<br>L L1<br>SOLDERING FOOTPRINT*<br>**----- End of picture text -----**<br> **==> picture [208 x 114] intentionally omitted <==** **----- Start of picture text -----**<br> 4.343<br>0.171<br>a<br>——<br>3.810<br>0.150<br>2.794<br>|_|<br>0.110<br>SCALE 4:1 mm<br>_ inches<br>**----- End of picture text -----**<br> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** ## **LITERATURE FULFILLMENT** : Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Email** : orderlit@onsemi.com ◊ **N. American Technical Support** : 800−282−9855 Toll Free USA/Canada **ON Semiconductor Website** : **www.onsemi.com** **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit Phone: 421 33 790 2910 **Japan Customer Focus Center** For additional information, please contact your local Phone: 81−3−5817−1050 Sales Representative **www.onsemi.com** **MURS320T3/D** **6**
Updated at February 9, 2023
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →