SURS8320T3G
Fast / Ultrafast Diode, 200 V, 4 A, 890 mV, 35 ns, 100 A
- Manufacturer: ONSEMI
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):4A; Diode Configuration:-; Forward Voltage VF Max:890mV; Reverse Recovery Time trr Max:35ns; Forward Surge Current
- SVHC: Lead (17-Jan-2022)
- No. of Pins: 2 Pin
- Product Range: -
- Qualification: AEC-Q101
- Diode Case Style: DO-214AB (SMC)
- Diode Configuration: -
- Forward Voltage Max: 890mV
- Forward Surge Current: 100A
- Reverse Recovery Time: 35ns
- Average Forward Current: 4A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 200V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 0.466 € |
| Current stock | 10+ |
| Lead time | 30 days |
**DATA SHEET www.onsemi.com** ## Surface Mount Ultrafast Power Rectifiers ## MURS320T3G, SURS8320T3G, SURS8320T3G-VF01, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G, SURS8360T3G-VF01 ## **ULTRAFAST RECTIFIERS 3.0 AMPERES 200−600 VOLTS** **==> picture [54 x 17] intentionally omitted <==** **----- Start of picture text -----**<br> SMC 2−LEAD<br>CASE 403AC<br>**----- End of picture text -----**<br> ## **MARKING DIAGRAM** This series employs the state−of−the−art epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes, in surface mount applications where compact size and weight are critical to the system. ## **Features** - Small Compact Surface Mountable Package with J−Bend Leads - Rectangular Package for Automated Handling - High Temperature Glass Passivated Junction - Low Forward Voltage Drop - (0.71 to 1.05 Volts Max @ 3.0 A, TJ = 150°C) - SURS8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **Mechanical Characteristics** - Case: Epoxy, Molded - Epoxy Meets UL 94 V−0 @ 0.125 in - Weight: 217 mg (approximately) - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds - Shipped in 16 mm Tape and Reel, 2500 units per reel - Polarity: Polarity Band on Plastic Body Indicates Cathode Lead - Device Meets MSL1 Requirements - ESD Ratings: - ♦ Human Body Model, 3B (> 8 kV) **==> picture [26 x 23] intentionally omitted <==** **----- Start of picture text -----**<br> AYWW<br>U3x �<br>�<br>**----- End of picture text -----**<br> - U3 = Specific Device Code x = D (320T3) = G (340T3) - = J (360T3) - A = Assembly Location** Y = Year WW= Work Week - **The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**†| |---|---|---| |MURS320T3G|SMC<br>(Pb−Free)|2,500 /<br>Tape & Reel| |MURS340T3G|SMC<br>(Pb−Free)|2,500 /<br>Tape & Reel| |MURS360T3G|SMC<br>(Pb−Free)|2,500 /<br>Tape & Reel| |SURS8320T3G*,<br>SURS8320T3G−VF01*|SMC<br>(Pb−Free)|2,500 /<br>Tape & Reel| |SURS8340T3G*|SMC<br>(Pb−Free)|2,500 /<br>Tape & Reel| |SURS8360T3G,<br>SURS8360T3G−VF01*|SMC<br>(Pb−Free)|2,500 /<br>Tape & Reel| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. - ♦ Charged Device Model, > 1000 V (Class C5) Publication Order Number: **MURS320T3/D** **1** © Semiconductor Components Industries, LLC, 2016 **January, 2022 − Rev. 19** ## **MURS320T3G, SURS8320T3G, SURS8320T3G−VF01, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G, SURS8360T3G−VF01** ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||||| |---|---|---|---|---|---| |**Rating**|**Symbol**|**MURS320T3G/**<br>**SURS8320T3G/**<br>**SURS8320T3G−VF01**|**MURS340T3G/**<br>**SURS8340T3G**|**MURS360T3G/**<br>**SURS8360T3G/**<br>**SURS8360T3G−VF01**|**Unit**| |Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|200|400|600|V| |Average Rectified Forward Current|IF(AV)|3.0 @ TL= 140°C<br>4.0 @ TL= 130°C|3.0 @ TL= 130°C<br>4.0 @ TL= 115°C|3.0 @ TL= 130°C<br>4.0 @ TL= 115°C|A| |Non−Repetitive Peak Surge Current<br>(Surge applied at rated load conditions<br>halfwave,<br>single phase, 60 Hz)|IFSM|100|||A| |Operating Junction Temperature|TJ|�65 to +175|||°C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||||| |---|---|---|---|---|---| |Thermal Resistance, Junction−to−Lead|R�JL||11||°C/W| |**ELECTRICAL CHARACTERISTICS**|||||| |Maximum Instantaneous Forward Voltage (Note 1)<br>(iF= 3.0 A, TJ= 25°C)<br>(iF= 4.0 A, TJ= 25°C)<br>(iF= 3.0 A, TJ= 150°C)|vF|0.875<br>0.89<br>0.71|1.25<br>1.28<br>1.05|1.25<br>1.28<br>1.05|V| |Maximum Instantaneous Reverse Current (Note 1)<br>(Rated dc Voltage, TJ= 25°C)<br>(Rated dc Voltage, TJ= 150°C)|iR|5.0<br>150|10<br>250|10<br>250|�A| |Maximum Reverse Recovery Time<br>(iF= 1.0 A, di/dt = 50 A/�s)<br>(iF= 0.5 A, iR= 1.0 A, IRECto 0.25 A)|trr|35<br>25|75<br>50|75<br>50|ns| |Maximum Forward Recovery Time<br>(iF= 1.0 A, di/dt = 100 A/�s, Recovery to 1.0 V)|tfr|25|50|50|ns| |Typical Peak Reverse Recovery Current<br>(IF= 1.0 A, di/dt = 50 A/�s)|IRM|0.8|||A| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. **www.onsemi.com** **2** **MURS320T3G, SURS8320T3G, SURS8320T3G−VF01, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G, SURS8360T3G−VF01** ## **MURS320T3G/SURS8320T3G/SURS8320T3G−VF01** **==> picture [491 x 411] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>40 TJ = 175°C<br>5.0 20<br>8.0<br>4.0<br>2.0 TJ = 100°C<br>0.8<br>3.0 0.4<br>TJ = 175°C 0.2<br>100°C 0.08<br>2.0 0.04 TJ = 25°C<br>0.02<br>0.008<br>0.004<br>25°C 0.002<br>0 20 40 60 80 100 120 140 160 180 200<br>1.0<br>VR, REVERSE VOLTAGE (VOLTS)<br>Figure 2. Typical Reverse Current*<br>0.7 * The curves shown are typical for the highest voltage device in the<br>voltage grouping. Typical reverse current for lower voltage selections<br>can be estimated from these same curves if VR is sufficiently below<br>0.5 rated VR.<br>10<br>9.0<br>8.0 I<br>0.3 (CAPACITIVE�LOAD) PK � 20 5.0<br>7.0 I<br>AV 10<br>6.0<br>0.2 5.0<br>4.0 dc<br>3.0<br>2.0 SQUARE WAVE<br>0.1 1.0<br>0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2<br>0<br>vF, INSTANTANEOUS VOLTAGE (VOLTS) 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>Figure 1. Typical Forward Voltage IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>�<br>, REVERSE CURRENT ( A)<br>, INSTANTANEOUS FORWARD CURRENT (A) IR<br>iF<br>, AVERAGE POWER DISSIPATION (W))<br>F(AV)<br>P<br>**----- End of picture text -----**<br> **Figure 1. Typical Forward Voltage** **Figure 3. Power Dissipation** **==> picture [492 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 10 200<br>RATED VOLTAGE APPLIED<br>9.0 R�JL = 11°C/W TYPICAL CAPACITANCE AT 0 V = 135 pF<br>8.0 TJ = 175 ° C 100<br>7.0 80<br>6.0 60<br>5.0<br>40<br>4.0<br>30<br>3.0 dc<br>20<br>2.0<br>1.0 SQUARE WAVE<br>0 10<br>90 100 110 120 130 140 150 160 170 180 190 0 10 20 30 40 50 60 70 80 90 100<br>TC, CASE TEMPERATURE (°C) VR, REVERSE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>, AVERAGE FORWARD CURRENT (A)<br>IF(AV)<br>**----- End of picture text -----**<br> **Figure 4. Current Derating, Case** **Figure 5. Typical Capacitance** **www.onsemi.com** **3** **MURS320T3G, SURS8320T3G, SURS8320T3G−VF01, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G, SURS8360T3G−VF01 TYPICAL CHARACTERISTICS** **==> picture [490 x 413] intentionally omitted <==** **----- Start of picture text -----**<br> 400<br>200<br>5.0 80 TJ = 175°C<br>40<br>20<br>3.0 8.0<br>TJ = 175°C 100°C 4.0 T J = 100°C<br>2.0<br>2.0<br>0.8<br>0.4<br>0.2<br>25°C 0.08 T J = 25°C<br>1.0 0.04<br>0.02<br>0.008<br>0.7<br>0.004<br>0 100 200 300 400 500 600 700<br>0.5 VR, REVERSE VOLTAGE (V)<br>Figure 7. Typical Reverse Current*<br>0.3 * The curves shown are typical for the highest voltage device in the<br>voltage grouping. Typical reverse current for lower voltage selections<br>can be estimated from these same curves if VR is sufficiently below<br>0.2 rated VR.<br>10<br>9.0<br>0.1<br>8.0<br>7.0<br>0.07 SQUARE WAVE<br>6.0<br>dc<br>0.05 5.0 (CAPACITIVE LOADS)<br>I<br>4.0 PK � 20 10 5.0<br>I<br>3.0 AV<br>0.03<br>2.0<br>0.02 1.0<br>0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3<br>0<br>vF, INSTANTANEOUS VOLTAGE (VOLTS) 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>Figure 6. Typical Forward Voltage IF(AV), AVERAGE FORWARD CURRENT (A)<br>�<br>, REVERSE CURRENT ( A)<br>, INSTANTANEOUS FORWARD CURRENT (A) IR<br>iF<br>, AVERAGE POWER DISSIPATION (WATTS)<br>F(AV)<br>P<br>**----- End of picture text -----**<br> **Figure 6. Typical Forward Voltage** **Figure 8. Power Dissipation** **==> picture [491 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 10 100<br>9.0 90<br>8.0 80 TYPICAL CAPACITANCE AT 0 V = 75 pF<br>7.0 70<br>6.0 60<br>5.0 50<br>4.0 40<br>dc<br>3.0 30<br>2.0 SQUARE WAVE 20<br>1.0 10<br>0 0<br>70 80 90 100 110 120 130 140 150 160 170 0 10 20 30 40 50 60 70 80 90 100<br>TC, CASE TEMPERATURE (°C) VR, REVERSE VOLTAGE (V)<br>C, CAPACITANCE (pF)<br>, AVERAGE FORWARD CURRENT (A)<br>IF(AV)<br>**----- End of picture text -----**<br> **Figure 9. Current Derating, Case** **Figure 10. Typical Capacitance** **www.onsemi.com** **4** **MURS320T3G, SURS8320T3G, SURS8320T3G−VF01, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G, SURS8360T3G−VF01 MURS320T3G, SURS8320T3G, SURS8320T3G−VF01, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G, SURS8360T3G−VF01** **==> picture [272 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>1000<br>100<br>10<br>10 100 1,000 10,000<br>tp, SQUARE WAVE PULSE DURATION ( � s)<br>CURRENT (A)<br>, NON−REPETITIVE SURGE<br>IFSM<br>**----- End of picture text -----**<br> **Figure 11. Typical Non−Repetitive Surge Current** *Typical performance based on a limited sample size. **onsemi** does not guarantee ratings not listed in the Maximum Ratings table. **www.onsemi.com** **5** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **SMC 2−LEAD** CASE 403AC ISSUE B ## **SCALE 1:1** DATE 27 JUL 2017 **==> picture [264 x 308] intentionally omitted <==** **----- Start of picture text -----**<br> HE<br>E<br>=<br>_ D<br>HD<br>A1 _ c<br>— a DETAIL A<br>TOP VIEW<br>DETAIL A<br>|<br>A2 A<br>L no s Todt b<br>SIDE VIEW END VIEW<br>RECOMMENDED<br>SOLDERING FOOTPRINT*<br>8.750<br>0.344<br>oe<br>3.790<br>2X<br>7 0.149<br>2X 2.250 mm SCALE 4:1<br>ot 0.089 inches<br>**----- End of picture text -----**<br> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NOTES: 1. DIMENSIONING AND TOLERANCING PER ANME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.254mm PER SIDE. 4. DIMENSIONS D AND E TO BE DETERMINED AT DATUM H. **==> picture [141 x 123] intentionally omitted <==** **----- Start of picture text -----**<br> 5. DIMENSION b SHALL BE MEASURED WITHIN THE AREA<br>DETERMINED BY DIMENSION L.<br>MILLIMETERS INCHES<br>DIM MIN MAX MIN MAX<br>A 1.95 2.61 0.077 0.103<br>A1 0.05 0.20 0.002 0.008<br>——— A2 1.90 2.41 0.075 0.095<br>b 2.90 3.20 0.114 0.126<br>c 0.15 0.41 0.006 0.016<br>D 5.55 6.25 0.219 0.246<br>EE. E 6.60 7.15 0.260 0.281<br>H E 7.75 8.15 0.305 0.321<br>L 0.75 1.60 0.030 0.063<br>GENERIC<br>MARKING DIAGRAM*<br>**----- End of picture text -----**<br> **==> picture [159 x 143] intentionally omitted <==** **----- Start of picture text -----**<br> AYWW<br>XXXX<br>XXXX = Specific Device Code<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>(Note: Microdot may be in either location) , = Pb−Free Package<br>*This information is generic. Please refer to<br>device data sheet for actual part marking.<br>Pb−Free indicator, “G” or microdot “ ”, |<br>may or may not be present.<br>**----- End of picture text -----**<br> |**DOCUMENT NUMBER:**|**98AON97675F**| |---|---| |**DESCRIPTION:**|**SMC 2−LEAD**| Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 1** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative ◊ **==> picture [232 x 43] intentionally omitted <==**
Updated at June 8, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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