SURS8160T3G

## MURS120T3G Series, SURS8120T3G Series 

## Surface Mount Ultrafast Power Rectifiers 

## **MURS105T3G, MURS110T3G, MURS115T3G, MURS120T3G, MURS140T3G, MURS160T3G, SURS8105T3G, SURS8110T3G, SURS8115T3G, SURS8120T3G, SURS8140T3G, SURS8160T3G** 

## **http://onsemi.com** 

**ULTRAFAST RECTIFIERS 1.0 AMPERE, 50−600 VOLTS** 

Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. 

## **Features** 

- Small Compact Surface Mountable Package with J−Bend Leads 

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SMB<br>CASE 403A<br>**----- End of picture text -----**<br>


- Rectangular Package for Automated Handling 

- High Temperature Glass Passivated Junction 

- Low Forward Voltage Drop (0.71 to 1.05 V Max @ 1.0 A, TJ = 150°C) 

- AEC−Q101 Qualified and PPAP Capable 

- SURS8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements 

- These are Pb−Free Packages 

## **Mechanical Characteristics:** 

- Case: Epoxy, Molded 

- Weight: 95 mg (Approximately) 

- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 

- Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 

- Polarity: Polarity Band Indicates Cathode Lead 

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MARKING DIAGRAM<br>AYWW<br>U1x<br>(| I<br>A = Assembly Location*<br>Y = Year<br>WW = Work Week<br>U1 = Device Code<br>x = A, B, C, D, G, or J<br>= Pb−Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


* The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. 

- ESD Rating: 

   - ♦ Human Body Model = 3B (> 8 kV) 

   - ♦ Machine Model = C (> 400 V) 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information in the table on page 2 of this data sheet. 

## **DEVICE MARKING INFORMATION** 

See general marking information in the device marking table on page 2 of this data sheet. 

Publication Order Number: **MURS120T3/D** 

**1** 

© Semiconductor Components Industries, LLC, 2013 **May, 2013 − Rev. 12** 

**MURS120T3G Series, SURS8120T3G Series** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**|||||||||
|---|---|---|---|---|---|---|---|---|
|**Rating**|**Symbol**|**MURS/SURS8**||||||**Unit**|
|||**105T3**|**110T3**|**115T3**|**120T3**|**140T3**|**160T3**||
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|50|100|150|200|400|600|V|
|Average Rectified Forward Current|IF(AV)|1.0 @ TL= 155°C<br>2.0 @ TL= 145°C||||1.0 @ TL= 150°C<br>2.0 @ TL= 125°C||A|
|Non−Repetitive Peak Surge Current,  (Surge applied<br>at rated load conditions halfwave, single phase, 60 Hz)|IFSM|40||||35||A|
|Operating Junction Temperature|TJ|�65 to +175||||||°C|



Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

## **THERMAL CHARACTERISTICS** 

|**Rating**|**Symbol**|**MURS/SURS8**|**MURS/SURS8**|**MURS/SURS8**|**MURS/SURS8**|||**Unit**|
|---|---|---|---|---|---|---|---|---|
|||**105T3**|**110T3**|**115T3**|**120T3**|**140T3**|**160T3**||
|Thermal Resistance<br>Junction−to−Lead (TL= 25°C)|R�JL|13||||||°C/W|
|**ELECTRICAL CHARACTERISTICS**|||||||||
|Maximum Instantaneous Forward Voltage (Note 1)<br>(iF= 1.0 A, TJ= 25°C)<br>(iF= 1.0 A, TJ= 150°C)|vF|0.875<br>0.71||||1.25<br>1.05||V|
|Maximum Instantaneous Reverse Current (Note 1)<br>(Rated DC Voltage, TJ= 25°C)<br>(Rated DC Voltage, TJ= 150°C)|iR|2.0<br>50||||5.0<br>150||�A|
|Maximum Reverse Recovery Time<br>(iF= 1.0 A, di/dt = 50 A/�s)<br>(iF= 0.5 A, iR= 1.0 A, IRto 0.25 A)|trr|35<br>25||||75<br>50||ns|
|Maximum Forward Recovery Time<br>(iF= 1.0 A, di/dt = 100 A/�s, Rec. to 1.0 V)|tfr|25||||50||ns|
|Typical Peak Reverse Recovery Current<br>(IF= 1.0 A, di/dt = 50 A/�s)|IRM|0.75||||1.60||A|



1. Pulse Test: Pulse Width = 300 � s, Duty Cycle � 2.0%. 

## **DEVICE MARKING AND ORDERING INFORMATION** 

|**Device**|**Marking**|**Package**|**Shipping**†|
|---|---|---|---|
|MURS105T3G,<br>SURS8105T3G|U1A|SMB<br>(Pb−Free)|2,500 Units / Tape & Reel|
|MURS110T3G,<br>SURS8110T3G|U1B|SMB<br>(Pb−Free)|2,500 Units / Tape & Reel|
|MURS115T3G,<br>SURS8115T3G|U1C|SMB<br>(Pb−Free)|2,500 Units / Tape & Reel|
|MURS120T3G,<br>SURS8120T3G|U1D|SMB<br>(Pb−Free)|2,500 Units / Tape & Reel|
|MURS140T3G,<br>SURS8140T3G|U1G|SMB<br>(Pb−Free)|2,500 Units / Tape & Reel|
|MURS160T3G,<br>SURS8160T3G|U1J|SMB<br>(Pb−Free)|2,500 Units / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

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**2** 

**MURS120T3G Series, SURS8120T3G Series** 

## **MURS105T3G, MURS110T3G, MURS115T3G, MURS120T3G, SURS8105T3G, SURS8110T3G, SURS8115T3G, SURS8120T3G** 

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10<br>80<br>7.0 4020 TJ = 175°C<br>8.0<br>5.0 4.0<br>2.0<br>0.8 TJ = 100°C<br>3.0 0.4<br>175°C 100°C 0.2<br>2.0 0.08<br>TC = 25°C 0.040.02 TJ = 25°C<br>0.008<br>1.0<br>0.004<br>0.002<br>0.7<br>0 20 40 60 80 100 120 140 160 180 200<br>0.5 VR, REVERSE VOLTAGE (VOLTS)<br>Figure 2. Typical Reverse Current*<br>0.3 *The curves shown are typical for the highest voltage device in the<br>voltage grouping. Typical reverse current for lower voltage selections<br>0.2 can be estimated from these same curves if applied VR is sufficiently<br>below rated VR.<br>50<br>0.1<br>45<br>0.07 40 NOTE: TYPICAL<br>CAPACITANCE AT<br>0.05 35 0 V = 45 pF<br>30<br>25<br>0.03<br>20<br>0.02<br>15<br>10<br>0.01 5.0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3<br>0<br>vF, INSTANTANEOUS VOLTAGE (VOLTS) 0 10 20 30 40 50 60 70 80 90 100<br>Figure 1. Typical Forward Voltage VR, REVERSE VOLTAGE (VOLTS)<br>Figure 3. Typical Capacitance<br>10 5.0<br>9.0 RATED VOLTAGE APPLIEDR�JC = 13°C/W T J  = 175°C<br>8.0 TJ = 175 ° C 4.0 5.0<br>7.0 I<br>6.0 3.0 (CAPACITANCE�LOAD) I PK � 20 10<br>AV<br>5.0<br>4.0 2.0 DC<br>DC<br>3.0<br>SQUARE WAVE<br>2.0 1.0<br>1.0 SQUARE WAVE<br>0 0<br>80 90 100 110 120 130 140 150 160 170 180 0 0.5 1.0 1.5 2.0 2.5<br>TC, CASE TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>�<br>, REVERSE CURRENT (   A)<br>IR<br>, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>iF<br>C, CAPACITANCE (pF)<br>, AVERAGE FORWARD CURRENT (AMPS) , AVERAGE POWER DISSIPATION (WATTS)<br>IF(AV) PF(AV)<br>**----- End of picture text -----**<br>


**Figure 4. Current Derating, Case** 

**Figure 5. Power Dissipation** 

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**3** 

**MURS120T3G Series, SURS8120T3G Series** 

## **MURS140T3G, MURS160T3G, SURS8140T3G, SURS8160T3G** 

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10 400<br>200<br>7.0 80 TJ = 175°C<br>175°C 40<br>20<br>5.0<br>100°C 8.0<br>4.02.0 TJ = 100°C<br>3.0<br>TC = 25°C 0.8<br>2.0 0.4<br>0.2<br>0.08 TJ = 25°C<br>0.04<br>1.0 0.02<br>0.008<br>0.7 0.004<br>0 100 200 300 400 500 600 700<br>0.5 VR, REVERSE VOLTAGE (VOLTS)<br>Figure 7. Typical Reverse Current*<br>0.3 *The curves shown are typical for the highest voltage device in the<br>voltage grouping. Typical reverse current for lower voltage selections<br>0.2 can be estimated from these same curves if applied VR is sufficiently<br>below rated VR.<br>25<br>0.1<br>0.07 20 NOTE: TYPICAL<br>CAPACITANCE AT<br>0.05 0 V = 24 pF<br>15<br>0.03<br>10<br>0.02<br>5.0<br>0.01<br>0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3<br>0<br>vF, INSTANTANEOUS VOLTAGE (VOLTS) 0 4.0 8.0 12 16 20 24 28 32 36 40<br>Figure 6. Typical Forward Voltage VR, REVERSE VOLTAGE (VOLTS)<br>Figure 8. Typical Capacitance<br>10 5.0<br>RATED VOLTAGE APPLIED (CAPACITANCE LOAD) 10 5.0<br>9.0<br>8.0 R�TJCJ = 175 = 13° ° C/WC 4.0 IIPKAV � 20 SQUARE WAVE<br>7.0<br>6.0 3.0<br>DC<br>5.0 T J  = 175°C<br>4.0 2.0<br>DC<br>3.0<br>2.0 1.0<br>1.0 SQUARE WAVE<br>0 0<br>0 20 40 60 80 100 120 140 160 180 200 0 0.5 1.0 1.5 2.0 2.5<br>TC, CASE TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>�<br>, REVERSE CURRENT (   A)<br>IR<br>i   , INSTANTANEOUS FORWARD CURRENT (AMPS)F<br>C, CAPACITANCE (pF)<br>, AVERAGE FORWARD CURRENT (AMPS) , AVERAGE POWER DISSIPATION (WATTS)<br>IF(AV) PF(AV)<br>**----- End of picture text -----**<br>


**Figure 9. Current Derating, Case** 

**Figure 10. Power Dissipation** 

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**4** 

**MURS120T3G Series, SURS8120T3G Series** 

## **PACKAGE DIMENSIONS** 

**SMB** CASE 403A−03 ISSUE J 

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HE<br>NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>E 2. CONTROLLING DIMENSION: INCH.<br>3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1.<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>= = eS A 1.95 2.30 2.47 0.077 0.091 0.097<br>b D A1 0.05 0.10 0.20 0.002 0.004 0.008<br>b 1.96 2.03 2.20 0.077 0.080 0.087<br>c 0.15 0.23 0.31 0.006 0.009 0.012<br>D 3.30 3.56 3.95 0.130 0.140 0.156<br>E 4.06 4.32 4.60 0.160 0.170 0.181<br>U. POLARITY INDICATOROPTIONAL AS NEEDED H E 5.21 5.44 5.60 0.205 0.214 0.220<br>L 0.76 1.02 1.60 0.030 0.040 0.063<br>L1 0.51 REF 0.020 REF<br>A<br>A1<br>ie L L1 c [oo] S SS<br>SOLDERING FOOTPRINT*<br>2.261<br>0.089<br>PT<br>L 2.743<br>0.108<br>Lo<br>2.159<br>0.085 mm<br>SCALE 8:1<br>c— (—) inches<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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