SURS8105T3G

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## **-** Power Rectifier, Ultra Fast Recovery, 1 A, 50-600 V 

## MURS105, MURS110, MURS120, MURS140, MURS160, NRVUS110V, NRVUS120V, NRVUS160V 

Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. 

## **Features** 

- Small Compact Surface Mountable Package with J-Bend Leads 

- Rectangular Package for Automated Handling 

- High Temperature Glass Passivated Junction 

- Low Forward Voltage Drop (0.71 to 1.05 V Max @ 1.0 A, TJ = 150 °C) 

- NRVUS and SURS8 Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 

- These Devices are Pb-Free and are RoHS Compliant 

## **Mechanical Characteristics:** 

## **ULTRAFAST RECTIFIERS 1.0 AMPERE, 50−600 VOLTS** 

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SMB<br>CASE 403A<br>**----- End of picture text -----**<br>


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MARKING DIAGRAM<br>**----- End of picture text -----**<br>


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AYWW<br>U1x<br>(| I<br>A = Assembly Location*<br>Y = Year<br>WW = Work Week<br>U1 = Device Code<br>x = A, B, C, D, G, or J<br>= Pb-Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


* The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. 

- Case: Epoxy, Molded 

- Weight: 95 mg (Approximately) 

- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 

- Lead and Mounting Surface Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds 

- Polarity: Polarity Band Indicates Cathode Lead 

- ESD Rating: 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information in the table on page 3 of this data sheet. 

## **DEVICE MARKING INFORMATION** 

See general marking information in the device marking table on page 3 of this data sheet. 

- ♦ Human Body Model = 3B (> 8 kV) 

- ♦ Charged Device Model > 1000 V 

Publication Order Number: **MURS120T3/D** 

**1** 

© Semiconductor Components Industries, LLC, 20217 **September, 2025 − Rev. 21** 

## **MURS105, MURS110, MURS120, MURS140, MURS160, NRVUS110V, NRVUS120V, NRVUS160V** 

## **MAXIMUM RATINGS** 

|**Symbol**|**Rating**|**MURS/SURS8/NRVUS**|**MURS/SURS8/NRVUS**|**MURS/SURS8/NRVUS**|**MURS/SURS8/NRVUS**|**MURS/SURS8/NRVUS**|**MURS/SURS8/NRVUS**|**Unit**|
|---|---|---|---|---|---|---|---|---|
|||**105T3**|**110T3**|**115T3**|**120T3**|**140T3**|**160T3**||
|VRRM<br>VRWM<br>VR|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|50|100|150|200|400|600|V|
|IF(DC)|Continuous Forward Current|1.0 @ TL= 159°C<br>2.0 @ TL= 139°C||||1.0 @ TL= 159°C<br>2.0 @ TL= 139°C||A|
|IFSM|Non-Repetitive Peak Surge Current, (Surge applied<br>at rated load conditions halfwave, single phase, 60 Hz)|35||||35||A|
|TJ|Operating Junction Temperature|65 to +175||||||°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **THERMAL CHARACTERISTICS** 

|**ELECTRICAL CHARACTERISTICS**|**ELECTRICAL CHARACTERISTICS**(TA= 25°C, Unless otherwise noted)|C, Unless otherwise noted)|||
|---|---|---|---|---|
|vF|Maximum Instantaneous Forward Voltage (Note 1)<br>(iF= 1.0 A, TJ= 25°C)<br>(iF= 1.0 A, TJ= 150°C)|0.875<br>0.71|1.25<br>1.05|V|
|iR|Maximum Instantaneous Reverse Current (Note 1)<br>(Rated DC Voltage, TJ= 25°C)<br>(Rated DC Voltage, TJ= 150°C)|2.0<br>50|5.0<br>150|A|
|trr|Maximum Reverse Recovery Time<br>(iF= 1.0 A, di/dt = 50 A/ s, VR= 30 V)<br>(iF= 0.5 A, iR= 1.0 A, IRto 0.25 A)|35<br>25|75<br>50|ns|
|tfr|Maximum Forward Recovery Time<br>(iF= 1.0 A, di/dt = 100 A/ s, Rec. to 1.0 V)|25|50|ns|
|IRM|Typical Peak Reverse Recovery Current<br>(IF= 1.0 A, di/dt = 50 A/ s)|0.75|1.60|A|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle u <s 2.0%. 

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**MURS105, MURS110, MURS120, MURS140, MURS160, NRVUS110V, NRVUS120V, NRVUS160V DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping**[†] MURS105T3G U1A SMB 2,500 Units / Tape & Reel (Pb-Free) MURS110T3G, NRVUS110VT3G*, U1B SMB 2,500 Units / Tape & Reel NRVUS110VT3G-GA01* (Pb-Free) MURS120T3G, NRVUS120VT3G*, U1D SMB 2,500 Units / Tape & Reel NRVUS120VT3G-GA01* (Pb-Free) MURS140T3G U1G SMB 2,500 Units / Tape & Reel (Pb-Free) MURS160T3G, NRVUS160VT3G*, U1J SMB 2,500 Units / Tape & Reel NRVUS160VT3G-GA01* (Pb-Free) ~~====~~ † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. * NRVUS and SURS8 Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 

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**MURS105, MURS110, MURS120, MURS140, MURS160, NRVUS110V, NRVUS120V, NRVUS160V** 

**MURS105T3G, MURS110T3G, MURS120T3G, NRVUS110VT3G, NRVUS120VT3G, NRVUS110VT3G-GA01, NRVUS120VT3G-GA01** 

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10<br>80<br>7.0 2 4020 ——— e TJ = 175°C e<br>a YA Ay a<br>ee ee  eee 2) 8.0 a a es a<br>5.0 4.0<br>2.0<br>PTI ‘ 0.8 a eel TJ = 100°C<br>3.0 0.4<br>175°C 100°C 0.2<br>ART SSS SESS<br>2.0 PMA 0.08 ee<br>TC = 25°C 0.040.02 === TJ = 25°C _-==<br>1.0 ee 0.008 E e<br>0.004<br>0.002<br>0.7 eee 2s eee FF<br>ee ee ee 0 20 40 60 80 100 120 140 160 180 200<br>0.5 eeAee eeeeee VR, REVERSE VOLTAGE (VOLTS)<br>Figure 2. Typical Reverse Current*<br>*The curves shown are typical for the highest voltage device in the<br>0.3<br>ee) eae voltage grouping. Typical reverse current for lower voltage selections<br>can be estimated from these same curves if applied VR is sufficiently<br>0.2 P| [Lepper] below rated VR.<br>50<br>0.1 LEE) 45 Geet<br>Fre NOTE: TYPICAL —<br>40<br>0.07 RS4fS=——== CAPACITANCE AT ee<br>35 0 V = 45 pF<br>0.05 30<br>SEHR EEE<br>25<br>0.03 | | Fey | | | | dt 20 ee<br>0.02 Pt Fee Tf tf 15 PVE | ye yt tT Tt<br>10<br>5.0 ERSEEEEEEE<br>0.01 CCT PN | | | | ft | Tt<br>0 PF | | | tT | cE Tt<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 10 20 30 40 50 60 70 80 90 100<br>vF, INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>Figure 1. Typical Forward Voltage Figure 3. Typical Capacitance<br>12 5.0<br>11 Os a R TJLJ = 175 = 13°°C/WC T J  = 175°C<br>10 SS<br>4.0<br>9 5.0<br>8 TNE IPK 10<br>7 Prt SQUARE WAVE 3.0 (capacitanceLoa)— I = 20 _| | |)~<br>(Duty = 0.5) AV<br>6<br>5 | ~~ . 2.0 oA DC<br>4 HERS EEN SSoe<br>3 DC SQUARE WAVE<br>2 HSIN 1.0 IG<br>SOS ONT LEELET rg<br>01 PSON SN 0 |gga|<br>as a<br>25 40 55 70 85 100 115 130 145 160 175 0 0.5 1.0 1.5 2.0 2.5<br>TL, LEAD TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>Figure 4. Forward Current Derating of Lead Figure 5. Power Dissipation<br>Temperature<br>A)<br>, REVERSE CURRENT (<br>IR<br>, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>iF<br>C, CAPACITANCE (pF)<br>, PEAK FORWARD CURRENT (A)<br>IF(PK) , AVERAGE POWER DISSIPATION (WATTS)<br>PF(AV)<br>**----- End of picture text -----**<br>


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**MURS105, MURS110, MURS120, MURS140, MURS160, NRVUS110V, NRVUS120V, NRVUS160V MURS140T3G, MURS160T3G, SURS8140T3G, NRVUS160VT3G, NRVUS160VT3G-GA01** 

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10 400<br>200<br>7.0 80 TJ = 175°C<br>SESE 175°C = 40  GEES ee<br>5.0 pop A 20 a<br>100°C 8.0<br>3.0 2/7 ae 4.02.0 20Sa TJ = 100 eeeeeeee ° a C<br>TC = 25°C 0.8<br>2.0 0.4<br>HH, 0.2 es  e<br>0.08 TJ = 25°C<br>0.04<br>1.0 || 0.02 SSS St<br>ee a 0.008 ee ee eee<br>0.7 a ee | ee ee ee ee 0.004 en<br>Yr [| YvAp | [| | [ [| [| 0 100 200 300 400 500 600 700<br>0.5 foes | | ey Je ny | | | yt VR, REVERSE VOLTAGE (VOLTS)<br>Figure 7. Typical Reverse Current*<br>0.3 *The curves shown are typical for the highest voltage device in the<br>voltage grouping. Typical reverse current for lower voltage selections<br>0.2 Pee can be estimated from these same curves if applied VR is sufficiently<br>below rated VR.<br>25<br>0.1<br>0.07 ee 20 fr | | Tt NOTE: TYPICAL Z<br>CAPACITANCE AT<br>0.05 TAI EE ff ot yt 0 V = 24 pF =<br>15<br>SE Cae<br>0.03<br>10<br>TH Vi tf tf |<br>0.02<br>5.0 TAREE PPree ey<br>0.01 ime PN | | | ff |<br>PF | WET | PE<br>0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3<br>0 | | | Poete<br>vF, INSTANTANEOUS VOLTAGE (VOLTS) 0 4.0 8.0 12 16 20 24 28 32 36 40<br>Figure 6. Typical Forward Voltage VR, REVERSE VOLTAGE (VOLTS)<br>Figure 8. Typical Capacitance<br>12 5.0<br>1011 aP| ft tl R TJLJ = 175 = 13°°C/WC 4.0 (CAPACITANCE LOAD)IIPK 20 t—ohAA 10 5.0 SQUARE WAVE<br>98 Pot TR Et AV d Z| J<br>7 SQUARE WAVE 3.0<br>6 (Duty = 0.5) T J  = 175°C DC<br>5 2.0<br>4 i i ee ae | ITV ALT TT<br>3 DC<br>2 ee 1.0<br>ee ee “En TEE<br>1 Pot | ft tl hE OR LOAAA<br>0 0<br>25 40 55 70 85 100 115 130 145 160 175 0 0.5 1.0 1.5 2.0 2.5<br>TL, LEAD TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>A)<br>, REVERSE CURRENT (<br>IR<br>i   , INSTANTANEOUS FORWARD CURRENT (AMPS)F<br>C, CAPACITANCE (pF)<br>, PEAK FORWARD CURRENT (A)<br>IF(PK) , AVERAGE POWER DISSIPATION (WATTS)<br>PF(AV)<br>**----- End of picture text -----**<br>


**Figure 9. Forward Current Derating of Lead Temperature** 

**Figure 10. Power Dissipation** 

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**MURS105, MURS110, MURS120, MURS140, MURS160, NRVUS110V, NRVUS120V, NRVUS160V** 

## **REVISION HISTORY** 

|**Revision**|**Description of Changes**|**Date**|
|---|---|---|
|21|Removal of MURS115, SURS8105, SURS8110, SURS8120, SURS8140 and SURS8160<br>devices from the front page title and Device Marking and Ordering Information table (p.3)|9/8/2025|



This document has undergone updates prior to the inclusion of this revision history table. The changes tracked here only reflect updates made on the noted approval dates. 

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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**SMB** CASE 403A−03 ISSUE J 

**SCALE 1:1 SCALE 1:1 Polarity Band Non−Polarity Band** 

DATE 19 JUL 2012 

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HE<br>E<br>b D<br>POLARITY INDICATOR<br>OPTIONAL AS NEEDED<br>A<br>A1<br>L L1 c<br>**----- End of picture text -----**<br>


## **SOLDERING FOOTPRINT*** 

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2.261<br>0.089<br>2.743<br>0.108<br>2.159<br>0.085<br>SCALE 8:1<br>� inches [mm] �<br>**----- End of picture text -----**<br>


NOTES: 

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 

2. CONTROLLING DIMENSION: INCH. 

3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1. 

|**DIM**|**MILLIMETERS**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**INCHES**|
|---|---|---|---|---|---|---|
||**MIN**|**NOM**|**MAX**|**MIN**|**NOM**|**MAX**|
|**A**|1.95|2.30|2.47|0.077|0.091|0.097|
|**A1**|0.05|0.10|0.20|0.002|0.004|0.008|
|**b**|1.96|2.03|2.20|0.077|0.080|0.087|
|**c**|015|023|031|0006|0009|0012|
|**D**|.<br>3.30|.<br>3.56|.<br>3.95|.<br>0.130|.<br>0.140|.<br>0.156|
|**E**|4.06|4.32|4.60|0.160|0.170|0.181|
|**HE**|5.21|5.44|5.60|0.205|0.214|0.220|
|**L**|0.76|1.02|1.60|0.030|0.040|0.063|
|**L1**|0.51 REF|||0.020 REF|||



## **GENERIC MARKING DIAGRAM*** 

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AYWW AYWW<br>XXXXX � XXXXX �<br>� �<br>Polarity Band Non−Polarity Band<br>XXXXX = Specific Device Code<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>� = Pb−Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


   - *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. 

- *For additional information on our Pb−Free strategy and soldering details, please download the **onsemi** Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

|**DOCUMENT NUMBER:**|**98ASB42669B**|
|---|---|
|**DESCRIPTION:**|**SMB**|



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