SURHS8160T3G

## MURHS160T3G, NRVUHS160VT3G, SURHS8160T3G 

## Power Rectifier 

## **Features and Benefits** 

- Ultrafast 35 Nanosecond Recovery Times 

- 175°C Operating Junction Temperature 

- High Temperature Glass Passivated Junction 

- High Voltage Capability to 600 V 

- NRVUHS and SURHS8 Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

## **www.onsemi.com** 

**ULTRAFAST RECTIFIER 1.0 AMPERES 600 VOLTS** 

- These Devices are Pb−Free and are RoHS Compliant* 

## **Applications** 

- Power Supplies 

- Inverters 

**SMB CASE 403A PLASTIC** 

- Free Wheeling Diodes 

1 2 

## **Mechanical Characteristics** 

- Case: Epoxy, Molded 

- Epoxy Meets UL 94 V−0 @ 0.125 in 

## **MARKING DIAGRAM** 

- Weight: 95 mg (Approximately) 

- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 

ALYWW Leads are Readily Solderable UH16 • Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds • Cathode Polarity Band UH16 = Specific Device Code AL = Assembly Location **MAXIMUM RATINGS** Y = Year WW = Work Week **Rating Symbol Value Unit** = Pb−Free Package Peak Repetitive Reverse Voltage VRRM 600 V (Note: Microdot may be in either location) Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Average Rectified Forward Current(Rated VR, TL = 145 ° C) IF(AV) 1.0 A **ORDERING INFORMATION** Nonrepetitive Peak Surge Current IFSM A **Device Package Shipping**[†] (Surge Applied at Rated Load Conditions 15 MURHS160T3G SMB 2,500 / Halfwave, Single Phase, 60 Hz) (Pb−Free) Tape & Reel Operating Junction and Storage TJ, Tstg −65 to +175 ° C Temperature Range NRVUHS160VT3G SMB 2,500 / (Pb−Free) Tape & Reel ESD Ratings: V Machine Model = C > 400 SURHS8160T3G SMB 2,500 / Human Body Model = 3B > 8000 (Pb−Free) Tape & Reel ~~===~~ Stresses exceeding those listed in the Maximum Ratings table may damage the †For information on tape and reel specifications, device. If any of these limits are exceeded, device functionality should not be including part orientation and tape sizes, please assumed, damage may occur and reliability may be affected. refer to our Tape and Reel Packaging Specification 

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Publication Order Number: **MURHS160/D** 

**1** 

© Semiconductor Components Industries, LLC, 2016 **October, 2016 − Rev. 4** 

**MURHS160T3G, NRVUHS160VT3G, SURHS8160T3G** 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Maximum Thermal Resistance, Junction−to−Lead (Note 1)|R�JL|24|°C/W|
|Maximum Thermal Resistance, Junction−to−Ambient (Note 2)|R�JA|80|°C/W|



1. Mounted with minimum recommended pad size, PC Board FR4. 

2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. 

## **ELECTRICAL CHARACTERISTICS** 

|**ELECTRICAL CHARACTERISTICS**|||||
|---|---|---|---|---|
|**Rating**|**Symbol**|**Typ**|**Max**|**Unit**|
|Maximum Instantaneous Forward Voltage (Note 3)<br>(IF= 1.0 A, TC= 25°C)<br>(IF= 1.0 A, TC= 125°C)|VF|1.5<br>1.2|2.4<br>1.7|V|
|Maximum Instantaneous Reverse Current (Note 3)<br>(Rated dc Voltage, TC= 25°C)<br>(Rated dc Voltage, TC= 125°C)|IR|0.18<br>5.0|20<br>200|�A|
|Maximum Reverse Recovery Time<br>(IF= 1.0 A, di/dt = 50 A/�s)<br>(IF= 0.5 A, IR= 1.0 A, IREC= 0.25 A)|trr|25<br>16|35<br>30|ns|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. 

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**MURHS160T3G, NRVUHS160VT3G, SURHS8160T3G** 

## **TYPICAL CHARACTERISTICS** 

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10 10<br>TJ = 150 ° C<br>TJ = 150 ° C<br>1 1<br>TJ = 125 ° C TJ = 125 ° C<br>TJ = 25 ° C TJ = 25 ° C<br>0.1 0.1<br>0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 3.5 4<br>VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)<br>Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage<br>(A) (A)<br>, INSTANTANEOUS FORWARD CURRENTIF , INSTANTANEOUS FORWARD CURRENTIF<br>**----- End of picture text -----**<br>


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1.0E−03<br>1.0E−04<br>1.0E−05 TJ = 150 ° C<br>1.0E−06<br>TJ = 125 ° C<br>1.0E−07<br>1.0E−08<br>TJ = 25 ° C<br>1.0E−09<br>1.0E−10<br>0 100 200 300 400 500 600<br>VR, REVERSE VOLTAGE (V)<br>Figure 3. Typical Reverse Current<br>1.0E−03<br>1.0E−04 TJ = 150 ° C<br>1.0E−05<br>TJ = 125 ° C<br>1.0E−06 TJ = 25 ° C<br>1.0E−07<br>1.0E−08<br>1.0E−09<br>1.0E−10<br>0 100 200 300 400 500 600<br>VR, REVERSE VOLTAGE (V)<br>, REVERSE CURRENT (A)<br>IR<br>, MAXIMUM REVERSE CURRENT (A)<br>IR<br>**----- End of picture text -----**<br>


**Figure 4. Maximum Reverse Current** 

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**MURHS160T3G, NRVUHS160VT3G, SURHS8160T3G** 

## **TYPICAL CHARACTERISTICS** 

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2 10<br>9<br>dc<br>8<br>7<br>SQUARE WAVE 6<br>SQUARE<br>1 5<br>4<br>DC<br>3<br>2<br>1<br>0 0<br>50 60 70 80 90 100 110 120 130 140 150 160 170 180 0 1 2 3 4 5<br>TC, CASE TEMPERATURE ( ° C) IO, AVERAGE FORWARD CURRENT (A)<br>Figure 5. Current Derating Figure 7. Forward Power Dissipation<br>100<br>TJ = 25 ° C<br>10<br>1<br>0 20 40 60 80 100<br>VR, REVERSE VOLTAGE (V)<br>Figure 6. Capacitance<br>100<br>D = 0.6<br>D = 0.2<br>10 D = 0.1<br>D = 0.05<br>1<br>D = 0.01<br>P (pk)<br>0.1 SINGLE PULSE t1<br>t2<br>DUTY CYCLE, D = t1/t2<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, TIME (sec)<br>(W)<br>, AVERAGE POWER DISSIPATION<br>, AVERAGE FORWARD CURRENT (A)IF PFO<br>C, CAPACITANCE (pF)<br>R(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


**Figure 8. Thermal Response Junction−to−Ambient** 

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**MURHS160T3G, NRVUHS160VT3G, SURHS8160T3G** 

## **PACKAGE DIMENSIONS** 

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SMB<br>CASE 403A−03<br>ISSUE J<br>HE<br>NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>E 2. CONTROLLING DIMENSION: INCH.<br>3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1.<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>= SS A 1.95 2.30 2.47 0.077 0.091 0.097<br>b D A1 0.05 0.10 0.20 0.002 0.004 0.008<br>b 1.96 2.03 2.20 0.077 0.080 0.087<br>c 0.15 0.23 0.31 0.006 0.009 0.012<br>D 3.30 3.56 3.95 0.130 0.140 0.156<br>E 4.06 4.32 4.60 0.160 0.170 0.181<br>i POLARITY INDICATOROPTIONAL AS NEEDED H E 5.21 5.44 5.60 0.205 0.214 0.220<br>L 0.76 1.02 1.60 0.030 0.040 0.063<br>L1 0.51 REF 0.020 REF<br>A<br>A1<br>eh L L1 c [oo] —  nn<br>SOLDERING FOOTPRINT*<br>2.261<br>0.089<br>Po<br>7 2.743<br>0.108<br>\.<br>2.159<br>0.085 mm<br>SCALE 8:1<br>r— = inches<br>**----- End of picture text -----**<br>


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*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br>


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