SURHD8560W1T4G

## MURHD560T4G, SURHD8560T4G, MURHD560W1T4G, SURHD8560W1T4G 

## Power Rectifier 

## **www.onsemi.com** 

## **Features and Benefits** 

- Ultrafast 30 Nanosecond Recovery Times 

- 175°C Operating Junction Temperature 

- High Temperature Glass Passivated Junction 

## **ULTRAFAST RECTIFIER 5.0 AMPERES 600 VOLTS** 

- High Voltage Capability to 600 Volts 

- SURHD8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **Applications** 

- Power Supplies 

- Inverters 

- Free Wheeling Diodes 

## **Mechanical Characteristics** 

- Case: Epoxy, Molded 

- Epoxy Meets UL 94 V−0 @ 0.125 in 

- Weight: 0.4 g (approximately) 

- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 

- Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 

- ESD Ratings: 

   - ♦ Machine Model = C (> 400 V) 

**DPAK CASE 369C** ® **STYLES 3, 8** 1 1 4 4 3 3 ~~Te~~ STYLE 3 ~~pte~~ STYLE 8 **MARKING DIAGRAMS** AYWW AYWW UH560G 560W1G STYLE 3 STYLE 8 ~~4) 4)~~ UH560 = MURHD560T4 560W1 = MURHD560W1T4 A = Assembly Location Y =  Year WW = Work Week G = Pb−Free Package 

- ♦ Human Body Model = 3B (> 8000 V) 

## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|MURHD560T4G|DPAK<br>(Pb−Free)|2,500 /<br>Tape & Reel|
|SURHD8560T4G|DPAK<br>(Pb−Free)|2,500 /<br>Tape & Reel|
|MURHD560W1T4G|DPAK<br>(Pb−Free)|2,500 /<br>Tape & Reel|
|SURHD8560W1T4G|DPAK<br>(Pb−Free)|2,500 /<br>Tape & Reel|
|SSURHD8560W1T4G|DPAK<br>(Pb−Free)|2,500 /<br>Tape & Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: **MURHD560/D** 

**1** 

© Semiconductor Components Industries, LLC, 2016 **November, 2016 − Rev. 9** 

**MURHD560T4G, SURHD8560T4G, MURHD560W1T4G, SURHD8560W1T4G** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|600|V|
|Average Rectified Forward Current<br>(Rated VR, TC= 159°C)|IF(AV)|5.0|A|
|Non−Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|50|A|
|Operating Junction and Storage Temperature Range|TJ, Tstg|−65 to +175|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Maximum Thermal Resistance, Junction to Case|R�JC|2.5|°C/W|
|Maximum Thermal Resistance, Junction to Ambient (Note 1)|R�JA|49.5|°C/W|



1. Rating applies when surface mounted on a 1.5 mm FR4 PC board with a 1 oz. thick, 700 mm[2] Cu area. 

## **ELECTRICAL CHARACTERISTICS** 

|**ELECTRICAL CHARACTERISTICS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Maximum Instantaneous Forward Voltage (Note 2)<br>(IF= 5.0 Amps, TC= 25°C)<br>(IF= 5.0 Amps, TC= 125°C)|VF|2.7<br>1.65|V|
|Maximum Instantaneous Reverse Current (Note 2)<br>(Rated dc Voltage, TC= 25°C)<br>(Rated dc Voltage, TC= 125°C)|IR|10<br>70|�A|
|Maximum Reverse Recovery Time<br>(IF= 1.0 Amp, di/dt = 50 Amps/�s, VR= 30 V, TJ= 25°C)|trr|30|ns|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. 

**www.onsemi.com** 

**2** 

**MURHD560T4G, SURHD8560T4G, MURHD560W1T4G, SURHD8560W1T4G** 

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**----- Start of picture text -----**<br>
100 100<br>150 ° C 150 ° C<br>10 10<br>125 ° C 125 ° C<br>100 ° C 100 ° C<br>1 25 ° C 1 25 ° C<br>0.1 0.1<br>0.01 0.01<br>0 0.5 1.0 1.5 2.0 2.5 3.0 0 1.0 2.0 3.0 4.0 5.0 6.0<br>VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM FORWARD VOLTAGE (VOLTS)<br>Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage<br>1.0E−4 1.0E−3<br>150 ° C 150 ° C<br>1.0E−5 125 ° C 1.0E−4 125 ° C<br>100 ° C 100 ° C<br>1.0E−6 1.0E−5<br>1.0E−7 1.0E−6<br>1.0E−8 25 ° C 1.0E−7 25 ° C<br>1.0E−9 1.0E−8<br>0 100 200 300 400 500 600 0 100 200 300 400 500 600<br>VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>, FORWARD CURRENT (AMPS) , FORWARD CURRENT (AMPS)<br>IF IF<br>, REVERSE CURRENT (AMPS)<br>IR<br>, MAXIMUM REVERSE CURRENT (AMPS)<br>IR<br>**----- End of picture text -----**<br>


**Figure 3. Typical Reverse Current** 

**Figure 4. Maximum Reverse Current** 

**==> picture [483 x 174] intentionally omitted <==**

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100 20<br>90 TJ = 175 ° C<br>80<br>15<br>70<br>SQUARE<br>60<br>WAVE<br>50 10<br>40<br>dc<br>30<br>5<br>20<br>10<br>0 0<br>0 25 50 75 100 125 150 175 200 0 1 2 3 4 5 6 7 8<br>VR, REVERSE VOLTAGE (VOLTS) IO, AVERAGE FORWARD CURRENT (AMPS)<br>(WATTS)<br>C, CAPACITANCE (pF)<br>, AVERAGE POWER DISSIPATION<br>FO<br>P<br>**----- End of picture text -----**<br>


**Figure 5. Typical Capacitance** 

**Figure 6. Forward Power Dissipation** 

**www.onsemi.com** 

**3** 

**MURHD560T4G, SURHD8560T4G, MURHD560W1T4G, SURHD8560W1T4G** 

**==> picture [489 x 177] intentionally omitted <==**

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9 10,000<br>8 dc R � TJCJ = 175 = 2.5 °° C/WC<br>7<br>6 SQUARE WAVE 1,000<br>5<br>4<br>3 100<br>2<br>1<br>0 10<br>100 110 120 130 140 150 160 170 180 10 100 1,000 10,000<br>TC, CASE TEMPERATURE ( ° C) tp, SQUARE WAVE PULSE DURATION (�s)<br>, NON-REPETITIVE SURGE CURRENT (A)<br>IFSM<br>, AVERAGE FORWARD CURRENT (AMPS)<br>IF<br>**----- End of picture text -----**<br>


**Figure 7. Current Derating** 

**Figure 8. Typical Non−Repetitive Surge Current** 

* Typical performance based on a limited sample size. ON Semiconductor does not guarantee ratings not listed in the Maximum Ratings table. 

**==> picture [489 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>0.5<br>1<br>0.2<br>0.1<br>0.05<br>0.01 P(pk)<br>0.1<br>t1<br>Single Pulse t2<br>DUTY CYCLE, D = t 1 /t 2<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>t, TIME (s)<br>, TRANSIENT THERMAL RESISTANCE<br>(t)<br>R<br>**----- End of picture text -----**<br>


**Figure 9. Thermal Response, Junction to Case** 

**==> picture [489 x 174] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>0.5<br>10<br>0.2<br>0.1<br>0.05<br>1<br>0.01 P(pk)<br>0.1 t1<br>t2<br>Single Pulse DUTY CYCLE, D = t1/t2<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>t, TIME (s)<br>, TRANSIENT THERMAL RESISTANCE<br>(t)<br>R<br>**----- End of picture text -----**<br>


**Figure 10. Thermal Response, Junction to Ambient** 

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**4** 

**MURHD560T4G, SURHD8560T4G, MURHD560W1T4G, SURHD8560W1T4G** 

## **PACKAGE DIMENSIONS** 

**==> picture [481 x 407] intentionally omitted <==**

**----- Start of picture text -----**<br>
DPAK (SINGLE GAUGE)<br>CASE 369C<br>ISSUE F<br>NOTES:<br>A 1. DIMENSIONING AND TOLERANCING PER ASME<br>Y14.5M, 1994.<br>E C 2. CONTROLLING DIMENSION: INCHES.<br>A 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-<br>b3 B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLDMENSIONS b3, L3 and Z.<br>FLASH, PROTRUSIONS, OR BURRS. MOLD<br>FLASH, PROTRUSIONS, OR GATE BURRS SHALL<br>4 NOT EXCEED 0.006 INCHES PER SIDE.<br>L3 fale HE, Z 5. DIMENSIONS D AND E ARE DETERMINED AT THE<br>D DETAIL A H 6. DATUMS A AND B ARE DETERMINED AT DATUMOUTERMOST EXTREMES OF THE PLASTIC BODY.<br>1 2 3 PLANE H.<br>7. OPTIONAL MOLD FEATURE.<br>L4 NOTE 7 DIM MININCHESMAX MILLIMETERSMIN MAX<br>b2 c BOTTOM VIEW A 0.086 0.094 2.18 2.38<br>e SIDE VIEW A1 0.000 0.005 0.00 0.13<br>b b 0.025 0.035 0.63 0.89<br>TOP VIEW 0.005 (0.13) M C b2b3 0.0280.180 0.0450.215 0.724.57 1.145.46<br>c 0.018 0.024 0.46 0.61<br>c2 0.018 0.024 0.46 0.61<br>H Z Z D 0.235 0.245 5.97 6.22<br>E 0.250 0.265 6.35 6.73<br>e 0.090 BSC 2.29 BSC<br>L2 [GAUGE] PLANE C SEATINGPLANE H 0.370 0.410 9.40 10.41<br>L 0.055 0.070 1.40 1.78<br>L1 0.114 REF 2.90 REF<br>L2 0.020 BSC 0.51 BSC<br>L L3 0.035 0.050 0.89 1.27<br>A1 BOTTOM VIEW L4 −−− 0.040 −−− 1.01<br>pof L1 ta ba CONSTRUCTIONS h ALTERNATE Ooh Z 0.155 −−− 3.93 −−−<br>DETAIL A<br>ROTATED 9  CW SOLDERING FOOTPRINT* STYLE 3:<br>PIN 1. ANODE<br>2. CATHODE<br>6.20 3.00 3. ANODE<br>0.244 0.118 4. CATHODE<br>2.58<br>STYLE 8:<br>0.102 PIN 1. N/C<br>2. CATHODE<br>3. ANODE<br>5.80 4. CATHODE<br>1.60 6.17<br>0.228<br>0.063 0.243<br>Te<br>SCALE 3:1 mm<br>inches<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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