SURD8320T4G

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## Switch-mode Power Rectifier 

## **ULTRAFAST RECTIFIER** 

**3.0 AMPERES, 200 VOLTS** 

## MURD320, NRVUD320 

## **DPAK Surface Mount Package** 

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DPAK<br>CASE 369C<br>1 1<br>4 4<br>3 3<br>STYLE 3 STYLE 8<br>MARKING DIAGRAM<br>AYWW AYWW<br>U U<br>320G 320W1G<br>4) 4)<br>MURD320T4G NRVUD320W1T4G<br>SURD8320T4G<br>NRVUD320VT4G<br>A = Assembly Location**<br>Y = Year<br>WW = Work Week<br>G = Pb−Free Package<br>**----- End of picture text -----**<br>


These state−of−the−art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. 

## **Features** 

- Ultrafast 35 Nanosecond Recovery Time 

- Low Forward Voltage Drop 

- Low Leakage 

- NRVUD, SURD8 Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free and are RoHS Compliant* 

## **Mechanical Characteristics** 

- Case: Epoxy, Molded 

- Weight: 0.4 Gram (Approximately) 

- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 

**The Assembly Location Code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. 

- Lead and Mounting Surface Temperature for Soldering Purposes: 260  C Max. for 10 Seconds 

 ESD Ratings:  Machine Model = C (> 400 V) **ORDERING INFORMATION**  Human Body Model = 3B (> 8 kV) **Device Package Shipping**[†] **MAXIMUM RATINGS** MURD320T4G DPAK 2500 / Tape & (Pb−Free) Reel **Rating Symbol Value Unit** NRVUD320VT4G DPAK 2500 / Tape & Peak Repetitive Reverse Voltage VRRM 200 V (Pb−Free) Reel Working Peak Reverse Voltage VRWM DC Blocking Voltage VR **DISCONTINUED** (Note 1) Average Rectified Forward Current(TC = 158C) IF(AV) 3.0 A NRVUD320W1T4G DPAK 2500 / Tape & (Pb−Free) Reel Peak Repetitive Forward Current(Square Wave, Duty = 0.5, IFRM 6.0 A NRVUD320W1T4G−VF01 DPAK 2500 / Tape & TC = 158C) (Pb−Free) Reel SURD8320T4G DPAK 2500 / Tape & Non−Repetitive Peak Surge Current IFSM A (Pb−Free) Reel (Surge Applied at Rated Load 75 Conditions Halfwave, 60 Hz) †For information on tape and reel specifications, Operating Junction and Storage TJ, Tstg −65 to +175 C including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging Specifications Temperature Range ~~=e~~ Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the 1. **DISCONTINUED:** This device is not device. If any of these limits are exceeded, device functionality should not be recommended for new design. Please contact assumed, damage may occur and reliability may be affected. your **onsemi** representative for information. The most current information on this device may be available on www.onsemi.com. 

Publication Order Number: 

**1** 

 Semiconductor Components Industries, LLC, 2015 **January, 2025 − Rev. 13** 

**MURD320/D** 

**MURD320, NRVUD320** 

**THERMAL CHARACTERISTICS** 

~~I~~ **Characteristics Symbol Value Unit** ~~ET a~~ Thermal Resistance − Junction−to−Case R JC 6 C/W ~~a~~ Thermal Resistance − Junction−to−Ambient (Note 1) ~~TO~~ R JA 80 C/W 1. Rating applies when surface mounted on the minimum pad sizes recommended. 

## **ELECTRICAL CHARACTERISTICS** 

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Characteristics Symbol Value Unit<br>Maximum Instantaneous Forward Voltage Drop (Note 2) vF Volts<br>(iF = 3 Amps, TJ = 25C) 0.95<br>(iF = 3 Amps, TJ = 125C) 0.75<br>eeee ee ee<br>Maximum Instantaneous Reverse Current (Note 2) iR A<br>(TJ = 25C, Rated dc Voltage) 5<br>(TJ = 125C, Rated dc Voltage) 500<br>eeee ee<br>Maximum Reverse Recovery Time trr ns<br>(IF = 1 Amp, di/dt = 50 Amps/ s, VR = 30 V, TJ = 25C) 35<br>ee (IF = 0.5 Amp, iR = 1 Amp, IREC = 0.25 A, VR = 30 V, TJ = 25C) ee ee 25 ee<br>Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product<br>performance may not be indicated by the Electrical Characteristics if operated under different conditions.<br>2. Pulse Test: Pulse Width = 300 s, Duty Cycle  u  2.0%.<br>100<br>80<br>40 TJ = 175  C<br>a<br>70 ee 20 ee <br>PPP 150 C ——<br>ee fy 8.0 a<br>50 4.0<br>FERRE] 2.0 S ES S<br>0.8 100  C<br>See Gee<br>30 0.4<br>0.2<br>20 0.08<br>0.04 25  C<br>PO YG 0.02 e——— e e<br>0.008<br>10 Coy 0.004 e e r<br>0.002<br>7.0 ee a<br>P| [ | [| | [| | SASF] [| | | 0 20 40 60 80 100 120 140 160 180 200<br>5.0 Sees| | | | hd |lhE ULF eee| | Figure 2. Typical Reverse Current* VR, REVERSE VOLTAGE (VOLTS)<br>3.0 SSGe8/// 175  C TJ = 25 eee  C * The curves shown are typical for the highest voltage device in thevoltage grouping. Typical reverse current for lower voltage selections<br>2.0 ppSannee saan Vcan be estimated from these curves if VR. R is sufficiently below rated<br>150  C 100  C 14<br>1.0 PE 13 SINE WAVE Za<br>te ee<br>12 SQUARE WAVE<br>0.7<br>11 5.0<br>eea 10 PEE,4 tT dc<br>0.5 a > SSL<br>9.0 10<br>FCCP EET 8.0 IADA<br>7.0 IPK/IAV = 20<br>0.3<br>PCCP eee<br>6.0<br>5.0<br>0.2 OT) ERAe<br>4.0<br>ee 3.0 eZee T J  = 175  C<br>2.0<br>0.1 PPCEERERLE<br>T E s§§ 1.0 Eegw<br>0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 ee eeee<br>vF, INSTANTANEOUS VOLTAGE (VOLTS) 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10<br>Figure 1. Typical Forward Voltage IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>A)<br>, REVERSE CURRENT (<br>IR<br>, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>iF<br>, AVERAGE POWER DISSIPATION (WATTS)<br>F(AV)<br>P<br>**----- End of picture text -----**<br>


**Figure 1. Typical Forward Voltage** 

**Figure 3. Average Power Dissipation** 

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**MURD320, NRVUD320** 

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8.0<br>RATED VOLTAGE APPLIED<br>7.0 R JC = 6  C/W<br>Seeecne<br>6.0 | | | lt<br>5.0 Pot |ENN<br>SINE WAVE<br>4.0 OR<br>SQUARE WAVE<br>Ne<br>3.0 | | Nw<br>dc<br>2.0 T J  = 175  C<br>1.00 poPt | | | | | TNbt i\ | UN<br>100 110 120 130 140 150 160 170 180<br>TC, CASE TEMPERATURE (  C)<br>, AVERAGE FORWARD CURRENT (AMPS)<br>IF(AV)<br>**----- End of picture text -----**<br>


**Figure 4. Current Derating, Case** 

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4.0<br>RATED VOLTAGE APPLIED<br>3.5 R JA = 80  C/W<br>Pe<br>3.0 F|t |<br>SURFACE MOUNTED ON<br>2.5<br>MIN. PAD SIZE RECOMMENDED<br>AN<br>2.0 ZaNw<br>dc<br>1.5 T J  = 175  C<br>SINE WAVE<br>1.0 See SNe OR<br>SQUARE WAVE<br>OS<br>0.5<br>| | 2 Nae<br>0 Pt | EE EE ESA<br>0 20 40 60 80 100 120 140 160 180 200<br>TA, AMBIENT TEMPERATURE (  C)<br>, AVERAGE FORWARD CURRENT (AMPS)<br>IF(AV)<br>**----- End of picture text -----**<br>


**Figure 5. Current Derating, Ambient** 

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1000<br>500<br>300 rr<br>200 a ee ee ee<br>TJ = 25  C<br>100 ee<br>50<br>=—=======—<br>30 a a eeeee<br>20 ee<br>aeeeee eeeeeee<br>10 a<br>0 10 20 30 40 50 60 70 80 90 100<br>VR, REVERSE VOLTAGE (VOLTS)<br>Figure 6. Typical Capacitance<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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4<br>1 [2]<br>3<br>SCALE 1:1<br>**----- End of picture text -----**<br>


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DPAK−3 6.10x6.54x2.28, 2.29P<br>CASE 369C<br>ISSUE K<br>**----- End of picture text -----**<br>


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DATE 14 MAY 2026<br>**----- End of picture text -----**<br>


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Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON10527D** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: DPAK−3 6.10x6.54x2.28, 2.29P PAGE 1 OF 2** 

**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2011 

DATE 13 MAY 2026 

**DPAK−3 6.10x6.54x2.28, 2.29P** CASE 369C ISSUE K 

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GENERIC<br>MARKING DIAGRAM*<br>XXXXXXG AYWW<br>ALYWW XXX<br>XXXXXG<br>IC Discrete<br>XXXXXX = Device Code<br>A = Assembly Location<br>L = Wafer Lot<br>Y =  Year<br>WW = Work Week<br>G = Pb−Free Package<br>**----- End of picture text -----**<br>


*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. 

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STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5:<br>PIN 1. BASE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE PIN 1. GATE<br>2. COLLECTOR 2. DRAIN 2. CATHODE 2. ANODE 2. ANODE<br>3. EMITTER 3. SOURCE 3. ANODE 3. GATE 3. CATHODE<br>4. COLLECTOR 4. DRAIN 4. CATHODE 4. ANODE 4. ANODE<br>STYLE 6: STYLE 7: STYLE 8: STYLE 9: STYLE 10:<br>PIN 1. MT1 PIN 1. GATE PIN 1. N/C PIN 1. ANODE PIN 1. CATHODE<br>2. MT2 2. COLLECTOR 2. CATHODE 2. CATHODE 2. ANODE<br>3. GATE 3. EMITTER 3. ANODE 3. RESISTOR ADJUST 3. CATHODE<br>4. MT2 4. COLLECTOR 4. CATHODE 4. CATHODE 4. ANODE<br>**----- End of picture text -----**<br>


Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON10527D** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: DPAK−3 6.10x6.54x2.28, 2.29P PAGE 2 OF 2** 

**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

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© Semiconductor Components Industries, LLC, 2011 

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