SURA8205T3G
Fast / Ultrafast Diode, 50 V, 2 A, Single, 940 mV, 30 ns, 50 A
- Manufacturer: ONSEMI
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- SVHC: No SVHC (19-Jan-2021)
- No. of Pins: 2 Pin
- Product Range: -
- Qualification: AEC-Q101
- Diode Case Style: DO-214AC (SMA)
- Diode Configuration: Single
- Forward Voltage Max: 940mV
- Forward Surge Current: 50A
- Reverse Recovery Time: 30ns
- Average Forward Current: 2A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 50V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.088 € |
| Current stock | 10+ |
| Lead time | 30 days |
**DATA SHEET www.onsemi.com** **SMA CASE 403D** ## Power Rectifier, Ultra-Fast Recovery, 2 A, 50 V ## MURA205, SURA8205, MURA210, NRVUA210V, SURA8210 Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. ## **Features** - Small Compact Surface Mountable Package with J−Bend Leads - Rectangular Package for Automated Handling - High Temperature Glass Passivated Junction - Low Forward Voltage Drop (0.74 V Max @ 2.0 A, TJ = 150°C) - NRVUA and SURA8 Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **Mechanical Characteristics:** - Case: Epoxy, Molded - Weight: 70 mg (Approximately) - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds - Polarity: Polarity Band Indicates Cathode Lead - ESD Protection: - ♦ Human Body Model > 4000 V (Class 3) - ♦ Charged Device Model > 1000 V ## **MARKING DIAGRAM** **==> picture [106 x 123] intentionally omitted <==** **----- Start of picture text -----**<br> U5x<br>AYWW �<br>U5x = Device Code<br>x = A for MURA205<br>= B for MURA210<br>A = Assembly Location**<br>Y = Year<br>WW = Work Week<br>� = Pb−Free Package<br>**----- End of picture text -----**<br> ** The Assembly Location Code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**†| |---|---|---| |MURA205T3G|SMA<br>(Pb−Free)|5,000/<br>Tape & Reel| |SURA8205T3G*||| |SURA8205T3G−GA01*||| |MURA210T3G||| |NRVUA210VT3G*||| |NRVUA210VT3G−GA01*||| |SURA8210T3G*||| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: **MURA205T3/D** **1** © Semiconductor Components Industries, LLC, 2016 **May, 2023 − Rev. 9** **MURA205, SURA8205, MURA210, NRVUA210V, SURA8210** ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage<br>MURA205T3G/SURA8205T3G<br>MURA210T3G/SURA8210T3G/NRVUA210VT3G/NRVUA210VT3G−GA01|VRRM<br>VRWM<br>VR|50<br>100|V| |Average Rectified Forward Current<br>@ TL= 155°C<br>@ TL= 135°C|IF(AV)|1.0<br>2.0|A| |Non-Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|50|A| |Operating Junction Temperature Range|TJ|−65 to +175|°C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Max**|**Unit**| |Thermal Resistance, Junction−to−Lead (TL= 25°C) (Note 1)<br>Thermal Resistance, Junction−to−Ambient (Note 1)|PsiJL<br>(Note 2)<br>R�JA|24<br>216|°C/W| 1. Rating applies when surface mounted on the minimum pad size recommended, PC Board FR−4. 2. In compliance with JEDEC 51, these values (historically represented by R � JL) are now referenced as PsiJL. ## **ELECTRICAL CHARACTERISTICS** |**ELECTRICAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Max**|**Unit**| |Maximum Instantaneous Forward Voltage (Note 3)<br>(iF= 2.0 A, TJ= 25°C)<br>(iF= 2.0 A, TJ= 150°C)|vF|0.94<br>0.74|V| |Maximum Instantaneous Reverse Current (Note 3)<br>(Rated DC Voltage, TJ= 25°C)<br>(Rated DC Voltage, TJ= 150°C)|iR|2.0<br>50|�A| |Maximum Reverse Recovery Time<br>(iF= 1.0 A, di/dt = 50 A/�s)|trr|30|ns| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. **www.onsemi.com** **2** **MURA205, SURA8205, MURA210, NRVUA210V, SURA8210** ## **TYPICAL CHARACTERISTICS** **==> picture [241 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10 TJ = 175 ° C<br>1<br>TJ = 100 ° C<br>0.1<br>0.01<br>TJ = 25 ° C<br>0.001<br>0 20 40 60 80 100<br>VR, REVERSE VOLTAGE (VOLTS)<br>A)<br>�<br>, REVERSE CURRENT (<br>IR<br>**----- End of picture text -----**<br> **Figure 1. Typical Reverse Current** **==> picture [235 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>TJ = 175 ° C<br>10<br>TJ = 100 ° C<br>1 TJ = 25 ° C<br>0.1<br>0 20 40 60 80 100<br>VR, REVERSE VOLTAGE (VOLTS)<br>A)<br>�<br>, REVERSE CURRENT (<br>IR<br>**----- End of picture text -----**<br> **Figure 2. Maximum Reverse Current** **==> picture [242 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>TC = 175 ° C 100 ° C<br>25 ° C<br>1<br>0.1<br>0.01<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1<br>VF, INSTANTANEOUS VOLTAGE (VOLTS)<br>, INSTANTANEOUS FORWARD CURRENT (A)<br>IF<br>**----- End of picture text -----**<br> **Figure 3. Typical Forward Voltage** **==> picture [242 x 186] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>100 ° C<br>TC = 175 ° C<br>25 ° C<br>1<br>0.1<br>0.01<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1<br>VF, INSTANTANEOUS VOLTAGE (VOLTS)<br>, INSTANTANEOUS FORWARD CURRENT (A)<br>IF<br>**----- End of picture text -----**<br> **Figure 4. Maximum Forward Voltage** **www.onsemi.com** **3** **MURA205, SURA8205, MURA210, NRVUA210V, SURA8210** ## **TYPICAL CHARACTERISTICS** **==> picture [488 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 50 60<br>45 NOTE: MAXIMUM<br>NOTE: TYPICAL 50 CAPACITANCE AT<br>40<br>CAPACITANCE AT 0 V = 48 pF<br>35 0 V = 45 pF 40<br>30<br>25 30<br>20<br>20<br>15<br>10<br>10<br>5<br>0 0<br>0 4 8 12 16 20 24 28 32 36 40 0 4 8 12 16 20 24 28 32 36 40<br>VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF) C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 5. Typical Capacitance** **Figure 6. Maximum Capacitance** **==> picture [484 x 402] intentionally omitted <==** **----- Start of picture text -----**<br> 4 1.5<br>3.5 dc RTJ � = 175 JL = 24 ° C ° C/W dc RTJ � = 175 JA = 216 ° C ° C/W<br>3<br>1<br>2.5 SQUARE WAVE SQUARE<br>2 WAVE<br>1.5<br>0.5<br>1<br>0.5<br>0 0<br>100 110 120 130 140 150 160 170 180 0 20 40 60 80 100 120 140 160<br>TL, LEAD TEMPERATURE ( ° C) TA, AMBIENT TEMPERATURE ( ° C)<br>Figure 7. Current Derating, Lead Figure 8. Current Derating, Ambient<br>(FR−4 Board with Minimum Pad)<br>2.5<br>TJ = 175 ° C<br>2<br>dc<br>SQUARE WAVE<br>1.5<br>1<br>0.5<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5<br>IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>, AVERAGE FORWARD CURRENT (A)<br>, AVERAGE FORWARD CURRENT (A)<br>IF<br>IF(AV)<br>, AVERAGE POWER DISSIPATION (W)<br>F<br>P<br>**----- End of picture text -----**<br> **Figure 9. Power Dissipation** **www.onsemi.com** **4** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** ## **SMA** **==> picture [81 x 20] intentionally omitted <==** **----- Start of picture text -----**<br> STYLE 1 STYLE 2<br>SCALE 1:1<br>**----- End of picture text -----**<br> CASE 403D ISSUE J DATE 22 OCT 2021 **==> picture [161 x 18] intentionally omitted <==** **----- Start of picture text -----**<br> STYLE 1: STYLE 2:<br>PIN 1. CATHODE (POLARITY BAND) NO POLARITY<br>2. ANODE<br>**----- End of picture text -----**<br> ## **GENERIC** ## **MARKING DIAGRAM*** XXXX XXXX AYWW � AYWW � STYLE 1 STYLE 2 XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week � = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. ## **DOCUMENT NUMBER: 98AON04079D DESCRIPTION: SMA** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 1** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **ADDITIONAL INFORMATION** **TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales **==> picture [232 x 43] intentionally omitted <==**
Updated at June 8, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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