SURA8120T3G.
Fast / Ultrafast Diode, 200 V, 2 A, Single, 875 mV, 35 ns, 40 A
- Manufacturer: ONSEMI
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 0.21 € |
| Current stock | 10+ |
| Lead time | 30 days |
## MURA115, MURA120, NRVUA120V, SURA8120 **www.onsemi.com ULTRAFAST RECTIFIERS 1 AMPERE, 100−200 VOLTS SMA CASE 403D MARKING DIAGRAM** U4x AYWW ~~:~~ U4x = Device Code x = C for MURA115 = D for MURA120 A = Assembly Location Y = Year WW = Work Week = Pb−Free Package ## Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. ## **Features** - Small Compact Surface Mountable Package with J−Bend Leads - Rectangular Package for Automated Handling - High Temperature Glass Passivated Junction - Low Forward Voltage Drop (0.71 V Max @ 1.0 A, TJ = 150°C) - NRVUA and SURA8 Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable **SMA CASE 403D** - These Devices are Pb−Free and are RoHS Compliant* ## **Mechanical Characteristics:** - Case: Epoxy, Molded - Weight: 70 mg (Approximately) - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds - Polarity: Polarity Band Indicates Cathode Lead - ESD Protection: - ♦ Human Body Model > 4000 V (Class 3) - ♦ Machine Model > 400 V (Class C) ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**†| |---|---|---| |MURA115T3G|SMA<br>(Pb−Free)|5,000/Tape & Reel| |MURA120T3G|SMA<br>(Pb−Free)|5,000/Tape & Reel| |NRVUA120VT3G|SMA<br>(Pb−Free)|5,000/Tape & Reel| |SURA8120T3G|SMA<br>(Pb−Free)|5,000/Tape & Reel| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. - *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: **MURA115T3/D** **1** © Semiconductor Components Industries, LLC, 2017 **February, 2017 − Rev. 10** **MURA115, MURA120, NRVUA120V, SURA8120** ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage<br>MURA115T3G<br>MURA120T3G/SURA8120T3G/NRVUA120VT3G|VRRM<br>VRWM<br>VR|150<br>200|V| |Average Rectified Forward Current<br>@ TL= 155°C<br>@ TL= 135°C|IF(AV)|1.0<br>2.0|A| |Non-Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|40|A| |Operating Junction Temperature Range|TJ|−65 to +175|°C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Max**|**Unit**| |Thermal Resistance, Junction−to−Lead (TL= 25°C) (Note 1)<br>Thermal Resistance, Junction−to−Ambient (Note 1)|PsiJL<br>(Note 2)<br>R�JA|24<br>216|°C/W| 1. Rating applies when surface mounted on the minimum pad size recommended, PC Board FR−4. 2. In compliance with JEDEC 51, these values (historically represented by R � JL) are now referenced as PsiJL. ## **ELECTRICAL CHARACTERISTICS** |**ELECTRICAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Max**|**Unit**| |Maximum Instantaneous Forward Voltage (Note 3)<br>(iF= 1.0 A, TJ= 25°C)<br>(iF= 1.0 A, TJ= 150°C)|vF|0.875<br>0.71|V| |Maximum Instantaneous Reverse Current (Note 3)<br>(Rated DC Voltage, TJ= 25°C)<br>(Rated DC Voltage, TJ= 150°C)|iR|2.0<br>50|�A| |Maximum Reverse Recovery Time<br>(iF= 1.0 A, di/dt = 50 A/�s)|trr|35|ns| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. **www.onsemi.com** **2** **MURA115, MURA120, NRVUA120V, SURA8120** ## **TYPICAL CHARACTERISTICS** **==> picture [243 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>TJ = 175 ° C<br>10<br>TJ = 150 ° C<br>1<br>TJ = 100 ° C<br>0.1<br>0.01<br>TJ = 25 ° C<br>0.001<br>0 20 40 60 80 100 120 140 160 180 200<br>VR, REVERSE VOLTAGE (VOLTS)<br>A)<br>�<br>, REVERSE CURRENT (<br>IR<br>**----- End of picture text -----**<br> **Figure 1. Typical Reverse Current** **==> picture [242 x 181] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>TC = 175 ° C<br>1<br>0.1<br>150 ° C 100 ° C 25 ° C −65 ° C<br>0.01<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1<br>VF, INSTANTANEOUS VOLTAGE (VOLTS)<br>, INSTANTANEOUS FORWARD CURRENT (A)<br>IF<br>**----- End of picture text -----**<br> **Figure 3. Typical Forward Voltage** **==> picture [241 x 408] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>TJ = 175 ° C<br>TJ = 150 ° C<br>10<br>1 TJ = 100 ° C<br>0.1<br>TJ = 25 ° C<br>0.01<br>0 20 40 60 80 100 120 140 160 180 200<br>VR, REVERSE VOLTAGE (VOLTS)<br>Figure 2. Maximum Reverse Current<br>10<br>TC = 175 ° C<br>1<br>0.1<br>150 ° C 100 ° C 25 ° C −65 ° C<br>0.01<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1<br>VF, INSTANTANEOUS VOLTAGE (VOLTS)<br>A)<br>�<br>, REVERSE CURRENT (<br>IR<br>, INSTANTANEOUS FORWARD CURRENT (A)<br>IF<br>**----- End of picture text -----**<br> **Figure 4. Maximum Forward Voltage** **www.onsemi.com** **3** **MURA115, MURA120, NRVUA120V, SURA8120** ## **TYPICAL CHARACTERISTICS** **==> picture [490 x 391] intentionally omitted <==** **----- Start of picture text -----**<br> 50 50<br>NOTE: TYPICAL NOTE: MAXIMUM<br>45 45<br>CAPACITANCE AT CAPACITANCE AT<br>40 0 V = 45 pF 40 0 V = 47 pF<br>35 35<br>30 30<br>25 25<br>20 20<br>15 15<br>10 10<br>5 5<br>0 0<br>0 4 8 12 16 20 24 28 32 36 40 0 4 8 12 16 20 24 28 32 36 40<br>VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>Figure 5. Typical Capacitance Figure 6. Maximum Capacitance<br>5 1.5<br>1.25<br>4<br>dc<br>dc 1<br>3<br>SQUARE WAVE 0.75 SQUARE WAVE<br>2<br>0.5<br>1<br>0.25<br>0 0<br>80 90 100 110 120 130 140 150 160 170 180 0 20 40 60 80 100 120 140 160 180<br>TL, LEAD TEMPERATURE ( ° C) TA, AMBIENT TEMPERATURE ( ° C)<br>C, CAPACITANCE (pF) C, CAPACITANCE (pF)<br>, AVERAGE FORWARD CURRENT (A) , AVERAGE FORWARD CURRENT (A)<br>IF(AV) IF(AV)<br>**----- End of picture text -----**<br> **Figure 7. Current Derating, Lead** **Figure 8. Current Derating, Ambient** (FR−4 Board with Minimum Pad) **==> picture [239 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 3<br>2.5<br>dc<br>2<br>SQUARE WAVE<br>1.5<br>1<br>0.5<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5<br>IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>, AVERAGE POWER DISSIPATION (W)<br>F<br>P<br>**----- End of picture text -----**<br> **Figure 9. Power Dissipation** **www.onsemi.com** **4** **MURA115, MURA120, NRVUA120V, SURA8120** ## **PACKAGE DIMENSIONS** **SMA** CASE 403D ISSUE H **==> picture [133 x 114] intentionally omitted <==** **----- Start of picture text -----**<br> HE<br>E<br>=<br>b D<br>Le POLARITY INDICATOR by<br>OPTIONAL AS NEEDED<br>(SEE STYLES)<br>**----- End of picture text -----**<br> **==> picture [124 x 58] intentionally omitted <==** **----- Start of picture text -----**<br> =], L c<br>**----- End of picture text -----**<br> **==> picture [98 x 36] intentionally omitted <==** **----- Start of picture text -----**<br> A<br>A1<br>**----- End of picture text -----**<br> **==> picture [199 x 132] intentionally omitted <==** **----- Start of picture text -----**<br> NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: INCH.<br>3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L.<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>A 1.97 2.10 2.20 0.078 0.083 0.087<br>A1 0.05 0.10 0.20 0.002 0.004 0.008<br>b 1.27 1.45 1.63 0.050 0.057 0.064<br>c 0.15 0.28 0.41 0.006 0.011 0.016<br>S=SSa== D 2.29 2.60 2.92 0.090 0.103 0.115<br>E 4.06 4.32 4.57 0.160 0.170 0.180<br>H E 4.83 5.21 5.59 0.190 0.205 0.220<br>L 0.76 1.14 1.52 0.030 0.045 0.060<br>STYLE 1:<br>PIN 1. CATHODE (POLARITY BAND)<br>2. ANODE<br>**----- End of picture text -----**<br> ## **SOLDERING FOOTPRINT*** **==> picture [126 x 131] intentionally omitted <==** **----- Start of picture text -----**<br> 4.000<br>0.157<br>2.000<br>0.079<br>oy<br>oe<br>2.000<br>Lo<br>0.079<br>SCALE 8:1 mm<br>(—) inches<br>**----- End of picture text -----**<br> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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Updated at February 9, 2023
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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