SUG90090E-GE3

Power MOSFET, N Channel, 200 V, 100 A, 9500 µohm, TO-247, Through Hole

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Manufacturer: VISHAY
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.0079ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; P
MSL: MSL 1 - Unlimited
SVHC: Lead (21-Jan-2025)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: ThunderFET
Qualification: -
Power Dissipation: 395W
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Transistor Case Style: TO-247
Drain Source Voltage Vds: 200V
Operating Temperature Max: 175°C
Continuous Drain Current Id: 100A
Drain Source On State Resistance: 9500µohm
Gate Source Threshold Voltage Max: 4V

Delivery and price
Units per pack	1000
Price	1.78 €
Current stock	500+
Lead time	7 days

Datasheet

Updated at March 22, 2026