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STU6N65M2

Power MOSFET, N Channel, 650 V, 4 A, 1.2 ohm, TO-251, Through Hole

  • Manufacturer: STMICROELECTRONICS
  • Product type: Single MOSFETs
  • Product variants: No other variants available. No other names.
  • No. of Pins: 3Pins
  • Channel Type: N Channel
  • Power Dissipation: 60W
  • Transistor Mounting: Through Hole
  • Transistor Polarity: N Channel
  • Power Dissipation Pd: 60W
  • Rds(on) Test Voltage: 10V
  • On Resistance Rds(on): 1.2ohm
  • Transistor Case Style: TO-251
  • Drain Source Voltage Vds: 650V
  • Operating Temperature Max: 150°C
  • Continuous Drain Current Id: 4A
  • Drain Source On State Resistance: 1.2ohm
  • Gate Source Threshold Voltage Max: 3V
Delivery and price
Units per pack 1
Price 0.284 €
Current stock 41
Lead time 7 days