STTH100W04CW

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## **STTH100W04C** 

## Turbo 2 ultrafast high voltage rectifier 

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Datasheet    production data<br>**----- End of picture text -----**<br>


## **Features** 

- Ultrafast switching 

- Low reverse recovery current 

- Low thermal resistance 

- Reduces switching losses 

- ECOPACK[®] 2 compliant component 

- Ribbon bonding for more robustness 

## **Description** 

The STTH100W04CW, uses ST Turbo 2, 400 V technology. It is especially suited to be used for DC/DC and DC/AC converters in secondary stage of MIG/MMA/TIG welding machine. Housed in ST's TO-247, this device offers high power integration for all welding machines and industrial applications. 

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A2<br>K<br>A1<br>A2<br>K<br>A1<br>TO-247<br>STTH100W04CW<br>**----- End of picture text -----**<br>


## **Table 1. Device summary** 

|**Symbol**|**Value**|
|---|---|
|IF(AV)|2 x 50 A|
|VRRM|400 V|
|trr(typ)|35 ns|
|Tj(max)|175 °C|
|VF(typ)|0.98 V|



October 2012 

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Doc ID 023617 Rev 1 

This is information on a product in full production. 

_www.st.com_ 

**Characteristics** 

**STTH100W04C** 

## **1 Characteristics** 

## **Table 2. Absolute ratings (limiting values, at 25 °C, unless otherwise specified, per diode)** 

||**per diode)**|**per diode)**|**per diode)**|||
|---|---|---|---|---|---|
|**Symbol**|**Parameter**|||**Value**|**Unit**|
|VRRM|Repetitive peak reverse voltage|||400|V|
|IF(RMS)|Forward rms current|||75|A|
|IF(AV)|Average forward current,= 0.5|Tc= 120 °C|Per diode|50|A|
|||Tc= 110°C|Per device|100||
|IFSM|Surge non repetitive forward current|tp= 10 ms sinusoidal||350|A|
|Tstg|Storage temperature range|||-65 to + 175|°C|
|Tj|Maximum operating junction temperature|||+ 175|°C|



**Table 3. Thermal resistance** 

|**Table 3.**|**Thermal resistance**||||
|---|---|---|---|---|
|**Symbol**|**Parameter**||**Value**|**Unit**|
|Rth(j-c)|Junction to case|Per diode|0.7|°C / W|
|||Total|0.4||
|Rth(c)|Coupling||0.1|°C / W|



When diodes 1 and 2 are used simultaneously: 

Tj(diode 1) = P(diode 1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c) 

## **Table 4. Static electrical characteristics (per diode)** 

|**Symbol**|**Parameter**|**Test conditions**|**Test conditions**|**Min.**|**Typ**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|IR (1)|Reverse leakage current|Tj= 25 °C|VR= VRRM|||25|µA|
|||Tj= 125 °C|||25|250||
|VF (2)|Forward voltage drop|Tj= 25 °C|IF= 50A|||1.45|V|
|||Tj= 150 °C|||0.98|1.20||
|||Tj= 25 °C|IF= 100 A|||1.75||
|||Tj= 150 °C|||1.25|1.55||



1. Pulse test: tp = 5 ms,  < 2% 

2. Pulse test: tp = 380 µs,  < 2% 

To evaluate the conduction losses use the following equation: 

P = 0.85 x IF(AV) + 0.007 IF[2] (RMS) 

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**Characteristics** 

**Table 5. Dynamic electrical characteristics (per diode)** 

|**Symbol**<br>**Parameter**|**Parameter**<br>**Test conditions**|**Parameter**<br>**Test conditions**|**Min.**|**Typ**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|IRM<br>Reverse recovery current|Reverse recovery current<br>Tj= 125 °C<br>Reverse recovery charge<br>Softness factor|IF= 50 A, VR= 320 V<br>dIF/dt = -200 A/µs||15|20|A|
|QRR<br>Reverse recovery charge||||850||nC|
|Sfactor<br>Softness factor||||0.3|||
|trr<br>Reverse recovery time|Reverse recovery time<br>Tj= 25 °C|IF= 1 A, VR= 30 V<br>dIF/dt = -100 A/µs||35|50|ns|
|tfr<br>Forward recovery time|Forward recovery time<br>Tj= 25 °C|IF= 50 A, VFR= 1.4 V<br>dIF/dt = 200 A/µs|||500|ns|
|VFP<br>Forward recovery voltage|Forward recovery voltage<br>Tj= 25 °C|||2|3|V|



**Figure 1. Average forward power dissipation Figure 2. Forward voltage drop versus versus average forward current forward current (per diode) (per diode)** 

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9080 P pop F(AV)(W) py δ = 0.5 δ = 1 [| 1000.0 SSS IFM(A) SS SS SS SS<br>70 aESSE δ = 0.2 tS)a ogASeyAFe ———— (Maximum values) Tj=150 ° C<br>100.0<br>δ = 0.1<br>60 [| | δ = 0.05 AEA Ae a Tj=150  ° C ————<br>50 CP2 yAAAee Aa (Typical values) S aa ee ee Tj=25  ° C<br>(Maximum values)<br>10.0<br>40<br>30<br>SOT Lae ee ae<br>20 SALLI NA T AI 1.0 | | 7 | ff | | |<br>10 [HCOAg AD. —— IF(AV)(A) [aSS SS SS SSSSSS V FM (V)<br>0 e T δ = tp/T tp ee e 0.1 9<br>0 10 20 30 40 50 60 70 0.0 0.4 0.8 1.2 1.6 2.0 2.4<br>Figure 3. Relative variation of thermal  Figure 4. Peak reverse recovery current<br>impedance junction to case versus  versus dI F /dt (typical values, per<br>pulse duration diode)<br>Zth(j-c)/Rth(j-c) IRM(A)<br>1.00.9 CTa a  TTT FT 35 I F =I F(AV) TLLL-LELLELLE_LIELELLil<br>30 VR=320 V<br>0.8 EEE EE = tt P Tj=125 °C SRREEEEE<br>0.7 EEE Et TEYU 25 COPE EEEeeeA<br>a rEEEEEEEELELLEeer<br>0.6 fofa aTTT tT PT AAT 20 PEE eEeeee ele =eertTCeTreel<br>0.5 Cee ee Pity ey et ep pee<br>0.4 aes 15 es ><br>a a oO [ttt tt pet PtP te et<br>0.3 Co eo oo oo 10 reLLP er Peeerereree<br>0.2 Single pulse Ce ee 4 ee<br>CGR ee eel<br>0 5 Piette tT te tet ee er<br>0.10.0 DaaoheeeFC oter et i t p (s) [ | 0 A4ES dIF/dt(A/µs)<br>1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 0 50 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br>


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**STTH100W04C** 

## **Figure 5. Reverse recovery time versus dI** F **/dt Figure 6. Reverse recovery charges versus (typical values, per diode) dI** F **/dt (typical values, per diode)** 

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trr(ns) QRR(nC)<br>180 1600<br>160140 TVIj R =125  F =320 V=I F(AV)° C 1400 VT I j R =125  F =320 V =IF(AV)° C<br>1200<br>120<br>1000<br>100<br>800<br>80<br>600<br>60<br>400<br>40<br>200<br>20 dIF/dt(A/µs)<br>dIF/dt(A/µs)<br>0<br>0<br>0 50 100 150 200 250 300 350 400 450 500<br>0 50 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br>


## **Figure 7. Reverse recovery softness factor versus dI** F **/dt (typical values, per diode)** 

**Figure 8. Relative variation of dynamic parameters versus junction temperature** 

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S factor<br>0.6 2.0<br>0.5 VTI j R=F=320 V=I125 F(AV)°C SFACTOR Reference: TVIRF==I320 VF(AV)j=125 °C<br>1.5<br>0.4<br>1.0<br>0.3<br>0.2 IRM<br>0.5<br>0.1<br>dIF/dt(A/µs) QRR Tj [(°C)]<br>0.0<br>0.0<br>25 50 75 100 125<br>0 50 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br>


## **Figure 9. Transient peak forward voltage versus dI** F **/dt (typical values, per diode)** 

**Figure 10. Forward recovery time versus dI** F **/dt (typical values, per diode)** 

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VFP(V) tfr(ns)<br>5 500<br>4 TIj=125 °CF=IF(AV) 400 VTIFRj=125 °CF=I=1.4 VF(AV)<br>3 300<br>2 200<br>1 100<br>dI F /dt(A/µs) dI F /dt(A/µs)<br>0 0<br>100 150 200 250 300 350 400 450 500 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br>


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**Characteristics** 

**Figure 11. Junction capacitance versus reverse voltage applied (typical values, per diode)** 

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C(pF)<br>1000<br>F=1 MHz<br>V OSC =30 mV RMS<br>T j =25 °C<br>100<br>VR(V)<br>10<br>1 10 100 1000<br>**----- End of picture text -----**<br>


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**Package information** 

## **2 Package information** 

- Epoxy meets UL94, V0 

- Cooling method: by conduction (C) 

- Recommended torque value: 0.55 N·m (1.0 N·m maximum) 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com._ ECOPACK[®] is an ST trademark. 

## **Table 6. TO-247 dimensions** 

|D<br>L|||L2<br>c<br>A1<br>BACK VIEW<br>Heat-sink plane<br>b1<br>b2<br>b<br>A<br>e<br>1<br>2<br>2<br>3<br>3<br>ÆR<br>ÆP|**Ref.**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|
|---|---|---|---|---|---|---|---|---|---|---|
||||||**Millimeters**|||**Inches**|||
||||||**Min.**|**Typ.**|**Max.**|**Min.**|**Typ**|**Max.**|
|||||A|4.85||5.15|0.191||0.203|
|||||A1|2.20||2.60|0.086||0.102|
||S|E|||||||||
|||||b|1.00||1.40|0.039||0.055|
|||||b1|2.00||2.40|0.078||0.094|
|||||b2|3.00||3.40|0.118||0.133|
|||||c<br>D(1)|0.40<br>19.85||0.80<br>20.15|0.015<br> 0.781||0.031<br>0.793|
|||L1<br>1||E|15.45||15.75|0.608||0.620|
|||||e|5.30|5.45|5.60|0.209|0.215|0.220|
|||||L|14.20||14.80|0.559||0.582|
|||||L1|3.70||4.30|0.145||0.169|
||||||||||||
|||||L2|18.50 typ.|||0.728 typ.|||
|||||P(2)|3.55||3.65|0.139||0.143|
|||||R|4.50||5.50|0.177||0.217|
|||||S|5.30|5.50|5.70|0.209|0.216|0.224|



1. Dimension D plus gate protrusion does not exceed 20.5 mm 

2. Resin thickness around the mounting hole is not less than 0.9 mm 

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**Ordering information** 

## **3 Ordering information** 

|**Table 7.**<br>**Ordering information**|**Table 7.**<br>**Ordering information**|**Table 7.**<br>**Ordering information**|**Table 7.**<br>**Ordering information**|**Table 7.**<br>**Ordering information**|**Table 7.**<br>**Ordering information**|
|---|---|---|---|---|---|
|**Ordering type**|**Marking**|**Package**|**Weight**|**Base qty**|**Delivery mode**|
|STTH100W04CW|STTH100W04CW|TO-247|4.46 g|50|Tube|



## **4 Revision history** 

**Table 8. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|05-Oct-2012|1|First issue.|



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