STTH1003SBY-TR
Fast / Ultrafast Diode, 300 V, 10 A, Single, 1.3 V, 35 ns, 100 A
- Manufacturer: STMICROELECTRONICS
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:300V; Forward Current If(AV):10A; Diode Configuration:Single; Forward Voltage VF Max:1.3V; Reverse Recovery Time trr Max:35ns; Forward Surge Curre
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3 Pin
- Product Range: -
- Qualification: AEC-Q101
- Diode Case Style: TO-252 (DPAK)
- Diode Configuration: Single
- Forward Voltage Max: 1.3V
- Forward Surge Current: 100A
- Reverse Recovery Time: 35ns
- Average Forward Current: 10A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 300V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.303 € |
| Current stock | 1000+ |
| Lead time | 30 days |
**STTH1003S-Y** Datasheet Automotive 300 V, 10 A high efficiency ultrafast diode **==> picture [48 x 98] intentionally omitted <==** **----- Start of picture text -----**<br> A<br>K<br>A he<br>K<br>K<br>A<br>A<br>D²PAK<br>**----- End of picture text -----**<br> ## **Features** - AEC-Q101 qualified - Ultrafast recovery - Low power losses - High surge capability - Low leakage current - High junction temperature - ECOPACK[®] 2 compliant ## **Applications** - DC/DC converter - Reverse battery protection - Battery management system - Audio amplification ## **Description** This STTH1003S-Y is an ultrafast recovery power rectifier dedicated to energy recovery in automotive applications. |**Product summary**<br>~~Lo~~|**Product summary**<br>~~Lo~~| |---|---| |**IF(AV)**|10 A| |**VRRM**|300 V| |**Tj(max.)**|175 °C| |**VF(typ.)**|0.9 V| |**Trr(max.)**|13 ns| This STTH1003S-Y is also intended for the clamping function in an energy recovery block. The compromise between forward voltage drop and recovery time offers optimized performances. **DS8767** - **Rev 2** - **January 2019** For further information contact your local STMicroelectronics sales office. www.st.com **STTH1003S-Y Characteristics** **1** ## **Characteristics** **Table 1. Absolute ratings (limiting values, at 25 °C, unless otherwise specified)** |**Symbol**|**Parameter**|**Parameter**|**Value**|**Unit**| |---|---|---|---|---| |VRRM|Repetitive peak reverse voltage, Tj= -40 °C to +175 °C||300|V| |IF(RMS)|Forward rms current||20|A| |IF(AV)|Average forward current, δ = 0.5, square wave|TC= 150 °C|10|A| |IFSM|Surge non repetitive forward current|tp= 10 ms sinusoidal|100|A| |Tstg|Storage temperature range||-65 to +175|°C| |Tj|Operating junction temperature range||-40 to +175|°C| **Table 2. Thermal parameters** |**Symbol**|**Parameter**|**Maximum value**|**Unit**| |---|---|---|---| |Rth(j-c)|Junction to case|4|°C/W| For more information, please refer to the following application note : - AN5088 : Rectifiers thermal management, handling and mounting recommendations **Table 3. Static electrical characteristics** |**Symbol**|**Parameter**|**Test conditions**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---|---| |IR (1)|Reverse leakage current|Tj= 25 °C|VR= VRRM|-||10|µA| |||Tj= 125 °C||-|10|100|| |VF (2)|Forward voltage drop|Tj= 25 °C|IF= 10 A|-||1.30|V| |||Tj= 125 °C||-|0.90|1.10|| _1. Pulse test: tp = 5 ms, δ < 2%_ _2. Pulse test: tp =380 µs, δ < 2%_ To evaluate the conduction losses, use the following equation: P = 0.86 x IF(AV) + 0.024 x IF[2] (RMS) For more information, please refer to the following application notes related to the power losses: - AN604: Calculation of conduction losses in a power rectifier - AN5028: Calculation of turn-off power losses generated by an ultrafast diode **DS8767** - **Rev 2** **page 2/10** **STTH1003S-Y Characteristics** **Table 4. Dynamic electrical characteristics** |**Symbol**|**Parameter**||**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---|---| |trr|Reverse recovery time|Tj= 25 °C|IF= 0.5 A, Irr= 0.25 A, IR= 1 A|-|13|17|ns| ||||IF= 1 A, VR= 30 V, dIF/dt = -50 A/µs|-|28|35|| |IRM|Reverse recovery current||IF= 10 A, VR= 200 V, dlF/dt = 200 A/µs|-|5.7|7.5|A| |Sfactor|Softness factor|||-|0.3||-| |tfr|Forward recovery time||IF= 10 A, VFR= 1.1 x VFmax, dlF/dt = 100 A/µs|||200|ns| |VFP|Forward recovery voltage||IF= 10 A, dlF/dt = 100 A/µs||2.5|3.5|V| **DS8767** - **Rev 2** **page 3/10** **STTH1003S-Y Characteristics (curves)** ## **1.1 Characteristics (curves)** **Figure 1. Forward voltage drop versus current (maximum Figure 2. Peak reverse recovery current versus dIF/dt values) (90% confidence)** **==> picture [220 x 140] intentionally omitted <==** **----- Start of picture text -----**<br> I (A)F<br>100. 0<br>T =125°Cj<br>T =75°Cj<br>10. 0<br>T =25°Cj<br>1. 0<br>V (V)F<br>0.1<br>0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50<br>**----- End of picture text -----**<br> **==> picture [226 x 143] intentionally omitted <==** **----- Start of picture text -----**<br> IR M(A)<br>16<br>14 VT =125°CjR=200V<br>IF = 2xI F(AV)<br>12<br>IF = IF(AV)<br>10<br>IF = 0.5xIF(AV)<br>8<br>6<br>4<br>2<br>dIF/dt(A/µs)<br>0<br>0 50 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br> **==> picture [513 x 207] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 3. Reverse recovery time versus dIF/dt (90 % Figure 4. Softness factor versus dIF/dt (typical values)<br>confidence)<br>S factor<br>trr(ns) 0.60<br>100 VR=200V<br>90 VR=200V 0.50 T =125°Cj<br>T =125°Cj<br>80<br>70 0.40<br>IF = 2xIF(AV)<br>60<br>IF = IF(AV) 0.30<br>50<br>40 0.20<br>30 IF = 0.5xIF(AV)<br>20 0.10<br>10 dIF/dt(A/µs) dIF/dt(A/µs)<br>0 0.00<br>0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br> **DS8767** - **Rev 2** **page 4/10** **STTH1003S-Y Characteristics (curves)** **Figure 6. Transient peak forward voltage versus dIF/dt Figure 5. Relative variations of dynamic parameters versus junction temperature (reference: Tj = 125 °C) (90% confidence)** **==> picture [214 x 130] intentionally omitted <==** **----- Start of picture text -----**<br> 2.6<br>2.4<br>2.2<br>2.0 S factor<br>1.8<br>1.6<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6 IRM<br>0.4<br>0.2 T (°C)j<br>0.0<br>25 50 75 100 125<br>**----- End of picture text -----**<br> **==> picture [224 x 139] intentionally omitted <==** **----- Start of picture text -----**<br> VFP(V)<br>8<br>7 IT =125°CFj=IF(AV)<br>6<br>5<br>4<br>3<br>2<br>1<br>dIF/dt(A/µs)<br>0<br>0 50 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br> **==> picture [513 x 206] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 7. Forward recovery versus dIF/dt (90% Figure 8. Thermal resistance junction to ambient versus<br>confidence) copper surface under tab (typical values)<br>tfr( ns)<br>300 100 Rth(j-a) (°C/W)<br>IF=IF(AV) DPAK<br>250 VFR=1.1 x VT =125°Cj F max. 90 Epoxy printed circuit board, copper thickness: 35 µm<br>80<br>200 70<br>60<br>150 50<br>40<br>100<br>30<br>50 20<br>dIF/dt(A/µs) 10<br>0 S Cu (cm²)<br>0<br>0 50 100 150 200 250 300 350 400 450 500 0 5 10 15 20 25 30 35 40<br>**----- End of picture text -----**<br> **DS8767** - **Rev 2** **page 5/10** **STTH1003S-Y Package information** **2 Package information** In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK[®] is an ST trademark. ## **2.1 DPAK package information** - Epoxy meets UL94, V0 - Lead-free packages **Figure 9. DPAK package outline** **==> picture [254 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> A<br>E<br>c2<br>b4<br>E1<br>L2<br>D1<br>D<br>H<br>L4<br>A1<br>b (2x)<br>e R<br>e1<br>c<br>Seating plane<br>A2<br>(L1)<br>L<br>V2<br>Gauge<br>0.25<br> plane<br>**----- End of picture text -----**<br> **DS8767** - **Rev 2** **page 6/10** **STTH1003S-Y DPAK package information** ## **Table 5. DPAK mechanical data** ||**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**| |---|---|---|---|---|---|---| |**Dim.**|**Millimeters**|||**Inches(1)**||| ||**Min.**|**Typ.**|**Max.**|**Min.**|**Typ.**|**Max.**| |A|2.20||2.40|0.087||0.094| |A1|0.90||1.10|0.035||0.043| |A2|0.03||0.23|0.001||0.009| |b|0.64||0.90|0.025||0.035| |b4|5.20||5.40|0.205||0.213| |c|0.45||0.60|0.018||0.024| |c2|0.48||0.60|0.019||0.024| |D|6.00||6.20|0.236||0.244| |D1|4.95|5.10|5.25|0.195|0.201|0.207| |E|6.40||6.60|0.252||0.260| |E1|4.60|4.70|4.80|0.181|0.185|0.189| |e|2.159|2.286|2.413|0.085|0.090|0.095| |e1|4.445|4.572|4.699|0.175|0.180|0.185| |H|9.35||10.10|0.368||0.398| |L|1.00||1.50|0.039||0.059| |(L1)|2.60|2.80|3.00|0.102|0.110|0.118| |L2|0.65|0.80|0.95|0.026|0.031|0.037| |L4|0.60||1.00|0.024||0.039| |R||0.20|||0.008|| |V2|0°||8°|0°||8°| _1. Inches dimensions given for reference only_ **Figure 10. DPAK recommended footprint (dimensions are in mm)** **==> picture [160 x 197] intentionally omitted <==** **----- Start of picture text -----**<br> 6.3<br>10.7<br>6.1<br>B<br>1.5<br>4.572<br>A<br>The device must be positioned within<br>1.8 min.<br>2.8<br>**----- End of picture text -----**<br> **DS8767** - **Rev 2** **page 7/10** **STTH1003S-Y Ordering information** **3 Ordering information** ## **Table 6. Order code** |**Order code**|**Marking**|**Package**|**Weight**|**Base qty.**|**Delivery mode**| |---|---|---|---|---|---| |STTH1003SBY-TR|TH10 03SBY|DPAK|0.32 g|2500|Tape and reel| **DS8767** - **Rev 2** **page 8/10** **STTH1003S-Y** ## **Revision history** **Table 7. Document revision history** |**Date**|**Revision**|**Changes**| |---|---|---| |24-Oct-2012|1|Initial release.| |28-Jan-2019|2|AddedSection Applications. UpdatedTable 6. AddedFigure 8.| **DS8767** - **Rev 2** **page 9/10** **STTH1003S-Y** ## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved **DS8767** - **Rev 2** **page 10/10**
Updated at June 4, 2026
STMicroelectronics is a global leader in the semiconductor industry, recognized for developing highly integrated, energy-efficient solutions that power modern electronics. With a strong focus on innovation, ST provides a comprehensive portfolio of microelectronics that address the demanding requirements of industrial, automotive, communications, and consumer applications. Our extensive selection of STMicroelectronics components is built around a robust lineup of discrete semiconductors and circuit protection devices. We offer a wide variety of single MOSFETs, Schottky diodes, and fast and ultrafast recovery rectifier diodes, designed to deliver exceptional efficiency and thermal performance in power management and conversion systems. For robust circuit protection, our inventory features hundreds of transient voltage suppressors and TVS diodes that safeguard sensitive electronic components against destructive voltage spikes. In addition to core power discretes like TRIACs, SCRs, bipolar transistors, and single IGBTs, our STMicroelectronics range includes specialized integrated passive filters and MEMS sensors. Furthermore, ST offers advanced integrated passive devices, such as baluns and RF filters, which utilize high-quality monolithic RF IPD processes on glass or high-resistance silicon substrates. These components provide competitive cost structures, reduced power losses, and simplified RFIC-to-antenna matching, ensuring optimal system performance and delivering the reliability required for next-generation wireless and power designs.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →