STTH1003SB-TR
Fast / Ultrafast Diode, 300 V, 10 A, Single, 1.3 V, 35 ns, 100 A
- Manufacturer: STMICROELECTRONICS
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:300V; Forward Current If(AV):10A; Diode Configuration:Single; Forward Voltage VF Max:1.3V; Reverse Recovery Time trr Max:35ns; Forward Surge Curre
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3 Pin
- Product Range: -
- Qualification: -
- Diode Case Style: TO-252 (DPAK)
- Diode Configuration: Single
- Forward Voltage Max: 1.3V
- Forward Surge Current: 100A
- Reverse Recovery Time: 35ns
- Average Forward Current: 10A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 300V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.167 € |
| Current stock | 1000+ |
| Lead time | 30 days |
## **STTH1003S**
## High efficiency rectifier
**Datasheet** - **production data**
## **Description**
The STTH1003S is an ultrafast recovery power rectifier dedicated to energy recovery in PDP applications.
It is especially designed for clamping function in energy recovery block. The compromise between forward voltage drop and recovery time offers optimized performances.
**Table 1. Device summary**
## **Features**
- Ultrafast recovery
- Low power losses
- High surge capability
|**Symbol**|**Value**|
|---|---|
|IF(AV)|10 A|
|VRRM|300 V|
|trr(typ)|13 ns|
|Tj(max)|175 °C|
|VF(typ)|0.9 V|
- Low leakage current
- High junction temperature
- ECOPACK[®] 2 compliant component for DPAK on demand
November 2016
DocID11604 Rev 6
1/9
This is information on a product in full production.
_www.st.com_
**Characteristics**
**STTH1003S**
## **1 Characteristics**
**Table 2. Absolute ratings (limiting values, at 25 °C, unless otherwise specified)**
|**Symbol**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|
|VRRM|Repetitive peak reverse voltage||300|V|
|IF(RMS)|Forward rms current||20|A|
|IF(AV)|Average forward current<br>= 0.5, square wave|Tc= 150 °C|10|A|
|IFSM|Surge non repetitive forward current|tp= 10 ms sinusoidal|100|A|
|IRSM|Non repetitive peak reverse current|tp= 20 µs square|4|A|
|Tstg|Storage temperature range||-65 to +175|°C|
|Tj|Maximum operating junction temperature||175|°C|
## **Table 3. Thermal resistance**
|**Symbol**|**Parameter**|**Package**|**Package**|**Max. value**|**Max. value**|**Max. value**|**Unit**|**Unit**|
|---|---|---|---|---|---|---|---|---|
|Rth(j-c)|Junction to case|DPAK||4|||°C/W||
|**Table 4. Static electrical characteristics**|||||||||
|**Symbol**|**Parameter**|**Test conditions**||**Min.**|**Typ.**|**Max.**||**Unit**|
|IR<br>(1)|Reverse leakage current|Tj= 25 °C|VR= VRRM|-|-|10||µA|
|||Tj= 125 °C||-|10|100|||
|VF<br>(2)|Forward voltage drop|Tj= 25 °C|IF= 10 A|-|-|1.30||V|
|||Tj= 125 °C||-|0.90|1.10|||
1. Pulse test: tp = 5 ms, < 2%
2. Pulse test: tp = 380 µs, < 2%
To evaluate the conduction losses, use the following equation:
P = 0.86 x IF(AV) + 0.024 x IF[2] (RMS))
2/9
DocID11604 Rev 6
**STTH1003S**
**Characteristics**
**Table 5. Dynamic electrical characteristics**
|**Symbol**|**Parameter**|**Test conditions**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|trr|Reverse recovery time|Tj= 25 °C|IF= 0.5 A<br>Irr= 0.25 A<br>IR= 1 A|-|13|17|ns|
||||IF= 1 A<br>VR= 30 V<br>dIF/dt = -50 A/µs|-|28|35||
|tfr|Forward recovery time||IF= 10 A<br>VFR= 1.1 x VFmax<br>dIF/dt = 100 A/µs|-|-|200|ns|
|VFP|Peak forward voltage||IF= 10 A<br>dIF/dt = 100 A/µs|-|2.5|3.5|V|
|IRM|Reverse recovery current|Tj= 125 °C|IF= 10 A<br>VR= 200 V<br>dIF/dt = 200 A/µs|-|5.7|7.5|A|
|Sfactor|Softness factor|||-|0.3|-|-|
DocID11604 Rev 6
3/9
**Characteristics**
**STTH1003S**
**Figure 1. Forward voltage drop versus forward Figure 2. Peak reverse recovery current versus current (maximum values) dIF/dt (typical values)**
**==> picture [432 x 552] intentionally omitted <==**
**----- Start of picture text -----**<br>
==Se ee ee 1416 I a RM V T =125°C jR=200V (A)<br>=ARE1=78°C ONSA+ E EEE | 12 [CEEEEEEEESEE] GE ee IF = 2xIF(AV) ee<br>PSCCEEPELECL IF = IF(AV)<br>10<br>TR CT) | EREEREREEEE,EERE ES I F = 0.5xI F(AV) SSseer<br>8<br>en [7d] [4] 6 EEC eeese |eerTT tT<br>PEEP) | 4 GEER RB e er<br>aSSFA PS TASS SSSS SS SSS SS SSS NN4e e<br>2<br>aeea 0 MO dIF/dt(A/µs)<br>0 50 100 150 200 250 300 350 400 450 500<br>[LTA] fH TE Ve(V)re [|TT|tT[| | | ft a a<br>0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50<br>Figure 3. Reverse recovery time versus dIF/dt F/dt /dt Figure 4. Softness factor versus dI F /dt<br>(typical values) (typical values)<br>trr(ns)rr(ns)(ns) Sfactor<br>BERRAeaaESSE\AeaaESSE\aaESSE\aESSE\ESSE\ A aODaODaa OOEEEGeEEEGeGe VR=200V=200V T =125 jR=200V °CC ry fp “Or0.50fgg0.50fggfgg ETEEEEEEE--EEEETLTTTT TTTE yeEE TTTETEETTTETEEEEEEE--EEEETLTTTT TTTE yeEE TTTETEETTTETTLTTTT TTTE yeEE TTTETEETTTETTTTT TTTE yeEE TTTETEETTTETTT TTTE yeEE TTTETEETTTET TTTE yeEE TTTETEETTTETTE yeEE TTTETEETTTET yeEE TTTETEETTTETEE TTTETEETTTET TTTETEETTTETETEETTTETEETTTETTTTETET ETTTTEETTTEEEE TTTETE ET HeeT=ETT125°CT=ETT125°CETT125°C |_|[|[|<br>EASNeREENeREEREE IFF = 2xIF(AV)F(AV) Et | OEE EEE EE EE EE TE EE TE EE ET<br>NeHORSESee{|HORSESee{|e282ee{|{| | [|4 I F | = I F(AV) f | Prtftf tT tf ft fyrrftrrftft yf 0.30 aLiL<br>e282ee{|{| 4 LiL tt ?T TT ett tt te eee Tt Ey<br>IFF = 0.5xIF(AV)F(AV) eS<br>See fm fm<br>foSESE[otSESE[ot[ot tT tp te pe te | ol:: TELE<br>dI F /dt(A/µs)<br>SSFeeFee EEEEEETI | ool ||| | 1] | tf | anaes) FEELT} FEELT}LT} ee et ty<br>50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500<br>Figure 5. Relative variations of dynamic Figure 6. Transient peak forward voltage versus<br>parameters versus junction temperature dIF/dt (typical values)F/dt (typical values)/dt (typical values)<br>(reference: Tj = 125 °C)j = 125 °C) = 125 °C)<br>VFP(V)<br>ss 8 OO<br>7 I T =125°C Fj=IF(AV)<br>State Eo GREE<br> |S | fff fp yt tf tt | eet<br>6 fof ft ft tf et ty te eer<br>5<br>—_—_—__ ee<br>4<br> |S ts 3 a<br>ye ee a eG OO OO<br>e a eeeeee ee 2 a24ea2 eeeeOGee<br>a | 1 L<br>———————— ! a re 0 a ee dIF/dt(A/µs) PETtT tT tT tT<br>0 50 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br>
**Figure 3. Reverse recovery time versus dIF/dt F/dt /dt (typical values)**
**==> picture [448 x 131] intentionally omitted <==**
**----- Start of picture text -----**<br>
trr(ns)rr(ns)(ns)<br>100<br>90 VR=200V=200V<br>T =125 jR=200V °CC 125°C<br>80 \ A aODaODaa OOEEEGeEEEGeGe ry fp |_|[|[|<br>70 BERRAeaaESSE\AeaaESSE\aaESSE\aESSE\ESSE\ “Or0.50fgg0.50fggfgg ETEEEEEEE--EEEETLTTTT TTTE yeEE TTTETEETTTETEEEEEEE--EEEETLTTTT TTTE yeEE TTTETEETTTETTLTTTT TTTE yeEE TTTETEETTTETTTTT TTTE yeEE TTTETEETTTETTT TTTE yeEE TTTETEETTTET TTTE yeEE TTTETEETTTETTE yeEE TTTETEETTTET yeEE TTTETEETTTETEE TTTETEETTTET TTTETEETTTETETEETTTETEETTTETTTTETET ETTTTEETTTEEEE TTTETE ET HeeT=ETT125°CT=ETT125°CETT125°C<br>60 EASNeREENeREEREE IFF = 2xIF(AV)F(AV) Et | OEE EEE EE EE EE TE EE TE EE ET<br>5040 NeHORSESee{|HORSESee{|e282ee{|{| | [|4 I F | = I F(AV) f | Prtftf tT tf ft fyrrftrrftft yf 0.30 aLiL tt ?T TT ett tt te eee Tt Ey<br>30 IFF = 0.5xIF(AV)F(AV) eS<br>See fm fm<br>20<br>foSESE[otSESE[ot[ot tT tp te pe te | ol:: TELE<br>10 dI F /dt(A/µs)<br>0 SSFeeFee EEEEEETI | ool ||| | 1] | tf | anaes) FEELT} FEELT}LT} ee et ty<br>0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br>
**Figure 5. Relative variations of dynamic Figure 6. Transient peak forward voltage versus parameters versus junction temperature dIF/dt (typical values)F/dt (typical values)/dt (typical values) (reference: Tj = 125 °C)j = 125 °C) = 125 °C)**
4/9
DocID11604 Rev 6
**STTH1003S**
**Characteristics**
## **Figure 7. Forward recovery time versus dIF/dt (typical values)**
**==> picture [226 x 139] intentionally omitted <==**
**----- Start of picture text -----**<br>
tfr(ns)<br>300<br>IF=IF(AV)<br>250 VFR=1.1 x VT j=125°FCmax.<br>200<br>150<br>100<br>50<br>dIF/dt(A/µs)<br>0<br>0 50 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br>
DocID11604 Rev 6
5/9
**STTH1003S**
**Package Information**
## **2 Package Information**
- Epoxy meets UL94, V0
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark.
## **2.1 DPAK package information**
## **Figure 8. DPAK package outline**
**==> picture [360 x 368] intentionally omitted <==**
**----- Start of picture text -----**<br>
�<br>�<br>��<br>��<br>�����������<br>��<br>��<br>��<br>�<br>� �<br>��<br>��<br>� �<br>�<br>�� �<br>��<br>��<br>�<br>��<br>� ����<br>���� �����<br>**----- End of picture text -----**<br>
_Note: This package drawing may slightly differ from the physical package. However, all the specified dimensions are guaranteed._
6/9
DocID11604 Rev 6
**STTH1003S**
**Package Information**
**Table 6. DPAK package mechanical data**
||**Table 6. DPAK package mechanical datapackage mechanical dataackage mechanical datage mechanical datae mechanical data**|**Table 6. DPAK package mechanical datapackage mechanical dataackage mechanical datage mechanical datae mechanical data**|**Table 6. DPAK package mechanical datapackage mechanical dataackage mechanical datage mechanical datae mechanical data**|**Table 6. DPAK package mechanical datapackage mechanical dataackage mechanical datage mechanical datae mechanical data**|**Table 6. DPAK package mechanical datapackage mechanical dataackage mechanical datage mechanical datae mechanical data**|**Table 6. DPAK package mechanical datapackage mechanical dataackage mechanical datage mechanical datae mechanical data**|
|---|---|---|---|---|---|---|
|**Ref.**<br>~~a~~|**Dimensions**<br>~~a~~||||||
||**Millimeters**<br>~~a~~<br>~~ee~~<br>~~a~~<br>~~eeee~~|||**Inches**<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~eee~~|||
||**Min.**<br>~~a~~|**Typ.**<br>~~ee~~|**Max.**<br>~~ee~~|**Min.**<br>~~ee~~|**Typ.**<br>~~ee~~|**Max.**<br>~~eee~~|
|A<br>~~a~~<br>~~a~~|2.18<br>~~a~~<br>~~es~~<br>|~~ee~~<br>|2.40<br>~~ee~~<br>|0.085<br>~~ee~~<br>|~~ee~~<br>|0.094<br>~~eee~~<br>|
|A1<br>~~a~~<br>~~a~~|0.90<br>~~a~~<br>~~es~~<br>|~~ee ~~<br>|1.10<br> ~~ee~~<br>|0.035<br>~~ee~~<br>|~~ee~~<br>|0.043<br>~~eee~~<br>|
|A2<br>~~es~~|0.03<br>~~es~~|~~es~~|0.23<br>~~es~~|0.001<br>~~es~~|~~es~~|0.009<br>~~es~~|
|b<br>~~a ee~~|0.64<br>~~ee~~|~~ee~~|0.90<br>~~ee~~|0.025<br>~~ee~~|~~ee~~|0.035<br>~~ee~~|
|b4<br>~~a ee~~<br>~~a~~|4.95<br>~~ee~~<br>|~~ee~~<br>|5.46<br>~~ee~~<br>|0.194<br>~~ee~~<br>|~~ee~~<br>|0.214<br>~~ee~~<br>~~ee~~<br>|
|c<br>~~a~~<br>~~a~~|0.46<br>~~ee~~<br>|~~ee~~<br>|0.61<br>~~ee~~<br>|0.018<br>~~ee~~<br>|~~ee~~<br>|0.024<br>~~ee~~<br>~~ee~~<br>|
|c2<br>~~a~~<br>~~a~~|0.46<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~|0.60<br>~~ee~~<br>~~ee~~|0.018<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~|0.023<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|D<br>~~a~~<br>~~a~~|5.97<br>~~ee~~|~~ee~~|6.22<br>~~ee~~|0.235<br>~~ee~~|~~ee~~|0.244<br>~~ee~~<br>~~ee~~|
|D1<br>~~ee~~|4.95<br>~~ee~~||5.60|0.194||0.220|
|E<br>~~es~~|6.35<br>~~es~~|~~es~~|6.73<br>~~es~~|0.250<br>~~es~~|~~es~~|0.264<br>~~es~~|
|E1<br>~~a~~|4.32||5.50|0.170||0.216|
|e<br>~~a~~<br>~~a~~|~~ee~~|2.28<br>~~ee~~|~~ee~~|~~ee~~|0.090<br>~~ee~~|~~ee~~<br>~~ee~~|
|e1<br>~~a~~<br>~~a~~|4.40<br>~~ee~~|~~ee~~|4.70<br>~~ee~~|0.173<br>~~ee~~|~~ee~~|0.185<br>~~ee~~<br>~~ee~~|
|H<br>~~a~~|9.35||10.40|0.368||0.409<br>~~ee~~|
|L<br>~~ee~~|1.00<br>~~ee~~||1.78|0.039||0.070|
|L2<br>~~es~~|~~es~~|~~es~~|1.27<br>~~es~~|~~es~~|~~es~~|0.050<br>~~es~~|
|L4<br>~~a~~|0.60||1.02|0.023||0.040|
|V2<br>~~es~~|-8°<br>~~es ~~|~~ee~~|+8°<br>~~ee~~|-8°<br>~~ee~~||8°|
DocID11604 Rev 6
7/9
**Ordering Information**
**STTH1003S**
## **3 Ordering Information**
**Table 7. Ordering information**
|**Order code**|**Marking**|**Package**|**Weight**|**Base qty.**|**Delivery mode**|
|---|---|---|---|---|---|
|STTH1003SB-TR|STTH1 003S|DPAK|0.32 g|2500|Tape and reel|
## **4 Revision history**
**Table 8. Document revision history**
|**Date**|**Revision**|**Description of changes**|
|---|---|---|
|24-Aug-2005|1|First issue.|
|18-May-2009|2|Reformatted to current standards. Modified configuration<br>diagram on front page.|
|01-Apr-2014|3|Updated dimensions F1 and F2 in TO-220FPAB package<br>dimensions.|
|01-Aug-2014|4|Updated DPAK package information and removed D²PAK and<br>TO-220FPAB package and characteristics.|
|17-Sep-2014|5|Updated_Figure 8_and_Figure 9_.|
|14-Nov-2016|6|Updated DPAK package information and reformatted to<br>current standard.|
8/9
DocID11604 Rev 6
**STTH1003S**
## **IMPORTANT NOTICE – PLEASE READ CAREFULLY**
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2016 STMicroelectronics – All rights reserved
DocID11604 Rev 6
9/9
Updated at June 4, 2026
STMicroelectronics is a global leader in the semiconductor industry, recognized for developing highly integrated, energy-efficient solutions that power modern electronics. With a strong focus on innovation, ST provides a comprehensive portfolio of microelectronics that address the demanding requirements of industrial, automotive, communications, and consumer applications. Our extensive selection of STMicroelectronics components is built around a robust lineup of discrete semiconductors and circuit protection devices. We offer a wide variety of single MOSFETs, Schottky diodes, and fast and ultrafast recovery rectifier diodes, designed to deliver exceptional efficiency and thermal performance in power management and conversion systems. For robust circuit protection, our inventory features hundreds of transient voltage suppressors and TVS diodes that safeguard sensitive electronic components against destructive voltage spikes. In addition to core power discretes like TRIACs, SCRs, bipolar transistors, and single IGBTs, our STMicroelectronics range includes specialized integrated passive filters and MEMS sensors. Furthermore, ST offers advanced integrated passive devices, such as baluns and RF filters, which utilize high-quality monolithic RF IPD processes on glass or high-resistance silicon substrates. These components provide competitive cost structures, reduced power losses, and simplified RFIC-to-antenna matching, ensuring optimal system performance and delivering the reliability required for next-generation wireless and power designs.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →