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STPS40M80CG-TR
Small Signal Schottky Diode, Dual Common Cathode, 80 V, 40 A, 920 mV, 200 A, 175 °C
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- Manufacturer: STMICROELECTRONICS
- Product type:
- Diode Configuration:Dual Common Cathode; Repetitive Reverse Voltage Vrrm Max:80V; Forward Current If(AV):40A; Forward Voltage VF Max:920mV; Forward Surge Current Ifsm Max:200A; Operati
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: STPS4
- Qualification: -
- Diode Mounting: Surface Mount
- Diode Case Style: TO-263 (D2PAK)
- Diode Configuration: Dual Common Cathode
- Forward Voltage Max: 920mV
- Forward Surge Current: 200A
- Reverse Recovery Time: -
- Average Forward Current: 40A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 80V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.739 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**==> picture [62 x 39] intentionally omitted <==** ## **STPS40M80C** ## Power Schottk rectifier y ## **Features** - High junction temperature capability - Optimized trade-off between leakage current and forward voltage drop - Low leakage current - Avalanche capability specified ## **Description** This dual diode Schottky rectifier is suited for high frequency switch mode power supply. Packaged in TO-220AB, I[2] PAK and D[2] PAK, this device is particularly suited for use in notebook, game station, LCD TV and desktop adapters, providing these applications with a good efficiency at both low and high load. ## **Table 1. Device summary** |**Symbol**|**Value**| |---|---| |IF(AV)|2 x 20 A| |VRRM|80 V| |Tj (max)|175 °C| |VF(typ)|475 mV| **==> picture [188 x 233] intentionally omitted <==** **----- Start of picture text -----**<br> A1<br>K<br>A2<br>K K<br>A2<br>A2<br>K<br>A1 A1<br>I [2] PAK D [2] PAK<br>STPS40M80CR STPS40M80CG-TR<br>K<br>A2<br>K<br>A1<br>TO-220AB<br>STPS40M80CT<br>**----- End of picture text -----**<br> ## **Figure 1. Electrical characteristics[(a)]** **==> picture [170 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> I<br>V<br>"Forward"<br>I<br>2 x IO X<br>IF<br>IO X<br>VRRM<br>VAR VR<br>V<br>IR<br>VTo VF(Io) VF VF(2xIo)<br>"Reverse"<br>IAR<br>**----- End of picture text -----**<br> - a. VARM and IARM must respect the reverse safe operating area defined in _Figure 11_ . VAR and IAR are pulse measurements (tp < 1 µs). VR, IR, VRRM and VF, are static characteristics 1/10 April 2011 Doc ID 018718 Rev 1 _www.st.com_ **Characteristics** **STPS40M80C** ## **1 Characteristics** ## **Table 2. Absolute ratings (limiting values, per diode, at Tamb = 25 °C unless otherwise specified)** ||**otherwise specified)**|**otherwise specified)**|**otherwise specified)**|**otherwise specified)**||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**||||**Value**|**Unit**| |VRRM|Repetitive peak reverse voltage||||80|V| |IF(RMS)|Forward rms current||||30|A| |IF(AV)|Average forward current,δ= 0.5||Tc= 150 °C<br>Tc= 150 °C|Per diode<br>Per device|20<br>40|A| |IFSM|Surge non repetitive<br>forward current|tp= 10 ms sinusoidal||Tc= 25 °C|200|A| |PARM<br>(1)|Repetitive peak avalanche power||Tj= 25 °C, tp= 1 µs||10000|W| |VARM<br>(2)|Maximum repetitive peak<br>avalanche voltage|tp< 1 µs, Tj< 150 °C, IAR< 30 A|||100|V| |VASM<br>(2)|Maximum single pulse<br>peak avalanche voltage|tp< 1 µs, Tj< 150 °C, IAR< 30 A|||100|V| |Tstg|Storage temperature range||||-65 to +175|°C| |Tj|Maximum operating junction temperature(3)||||175|°C| 1. For temperature or pulse time duration deratings, please refer to figure 3 and 4. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025. 2. See _Figure 11_ dPtot 1 3. < condition to avoid thermal runaway for a diode on its own heatsink dTj Rth(j-a) ## **Table 3. Thermal parameters** |**Table 3.**|**Thermalparameters**|||| |---|---|---|---|---| |**Symbol**|**Parameter**||**Value**|**Unit**| |Rth(j-c)|Junction to case|per diode|1.30|°C/W| |||total|0.75|| |Rth(c)|Coupling||0.20|°C/W| When the two diodes 1 and 2 are used simultaneously: Δ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) 2/10 Doc ID 018718 Rev 1 **STPS40M80C** **Characteristics** **Table 4. Static electrical characteristics (per diode)** |**Symbol**|**Parameter**|**Test conditions**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---|---| |IR<br>(1)<br>Reverse leakage current|Reverse leakage current|Reverse leakage current<br>Tj= 25 °C<br>Tj= 125 °C|VR= VRRM|-|15|65|µA| |||||-|15|40|mA| |VF<br>(2)<br>Forward voltage drop|Forward voltage drop|Tj= 25 °C<br>Tj= 125 °C<br>Tj= 25 °C<br>Tj= 125 °C<br>Tj= 25 °C<br>Tj= 125 °C|IF= 10 A|-|0.550|0.600<br>0.510<br>0.735<br>0.635<br>0.920<br>0.795|V| |||||-|0.475||| ||||IF= 20 A|-|0.655||| |||||-|0.570||| ||||IF= 40 A|-|0.800||| |||||-|0.680||| 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % To evaluate the conduction losses use the following equation: P = 0.475 x IF(AV) + 0.008 x IF2(RMS) **==> picture [458 x 369] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 2. Average forward power dissipation Figure 3. Average forward current versus<br>versus average forward current ambient temperature<br>(per diode) ( δ = 0.5, per diode)<br>22 PF(AV)(W) T TTTTTTTITITTTIITTTITITtTy 24 a IF(AV)(A)<br>201816 δ = t A p n. / T 2 tp P [a] SeEELEreeELEELELELL | δ = 0.5 aCLL | δ = 1 | 222018 aaeea a Rth(j-a) = Rth(j-c) a re<br>rit m a a a<br>14 e+ptt dyt ye d pe e ryy eeop δ = 0.2 EEEEKAA EHEe 16 a a aCVa a<br>12 PP Py Pepe yr δ = 0.1 ry [| TAT eet tT tt Tt 14 a |<br>δ = 0.05 12<br>10<br>8 a Z| 10 poa a a<br>ttt YI ALA TEE EELELLL LLL 8 po<br>6 POCAJ | VA ieeeEe fo 6 eeea a a<br>4 |Be| | Veet6227 4tee Peeee eee eee 4 aa|a a CC<br>20 EAE EEEE EE EEE EF EEEEF IF(AV)(A) 20 ee Tamb(°C) [—}—| ++}<br>0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 0 25 50 75 100 125 150 175<br>Figure 4. Normalized avalanche power Figure 5. Normalized avalanche power<br>derating versus pulse duration derating versus junction<br>temperature<br>PARM(tp) PARM(T )j<br>1 a PARM(1µs) 5 OS OD 1.2 P BO ARM(25 °C)<br>0.1 TTaPTA aTTITIPENI 0.81 Kopai |<br>a TIT) | SESS<br>eet E+} A HF |] [|]<br>aSEH | 0.6 EeeReeeee<br>SSS | See EERE SaaS eS eee<br>0.01 ETIETI)SS 0.4 eeEES<br>Fes es<br>aes ee ee a<br>0.2<br>0.001 FETEeEe e Ee) tp(µs) | 0 PEReeEEE EEE EEE EERE EEE EEE EEE]E EEE Tj(°C)<br>0.01 0.1 1 10 100 1000 25 50 75 100 125 150<br>**----- End of picture text -----**<br> 3/10 Doc ID 018718 Rev 1 **Characteristics** **STPS40M80C** ## **Figure 6. Non repetitive surge peak forward Figure 7. Relative thermal impedance current versus overload duration junction to case versus pulse (maximum values, per diode) duration** **==> picture [445 x 332] intentionally omitted <==** **----- Start of picture text -----**<br> 260 re IM(A) | 1.0 Zth(j-c)/Rth(j-c) ami<br>240220 ee a a a | 0.9 re a ee<br>200 a—— = a 0.8 a LeeA<br>180 = 0.7 ee<br>160 =SSS e Tc = 25 °C 0.6 PotEe Pi<br>140 SS S et ee<br>120 aee eri Tc = 75 °C 0.5 |LeeTT TT eeAet<br>10080 PSaee a T et c = 125 °C 1 0.40.3 Peete(| [itt fTeeTt iteTTTT<br>60 Fe =e ee Eeeeee<br>4020 IM yeee [ee] t Ba [a] a O 0.20.1 beet e ee Single pulse — ceWtee|eaeTe<br>0 ; δ = 0.5 - a t(s) 0.0 SeLT ATiti | TE TTT TTT TTT TT tp(s) lJ<br>1.E-03 1.E-02 1.E-01 1.E+00 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00<br>Figure 8. Reverse leakage current versus Figure 9. Junction capacitance versus<br>reverse voltage applied reverse voltage applied<br>(typical values, per diode)typical values, per diode)ypical values, per diode)ical values, per diode)per diode)er diode)) (typical values, per diode)<br>1.E+05 IR(µA) 10000 C(pF)<br>Tj = 150 °C F = 1 MHz<br>1.E+04 Ro ) Tj = 125 °C Le re VoscTj= 30 mV= 25 °CRMS<br>SS SSS SSS SS a<br>Tj = 100 °C<br>1.E+03 e e ee<br>Tj = 75 °C 1000<br>—— ——ee<br>1.E+02<br>== eee ee ee eeee<br>———————————_—————————— Tj = 50 °C ee oe ee<br>Pa po RR<br>1.E+01 e Tj = 25 °C e P RSTRET<br>1.E+00 ee VR(V) 100 VR(V)<br>0 S 10 EE 20 30 40 P 50 60 S 70 80 | 1 (Co 10 m 100<br>**----- End of picture text -----**<br> **Figure 8. Reverse leakage current versus reverse voltage applied (typical values, per diode)typical values, per diode)ypical values, per diode)ical values, per diode)per diode)er diode))** **Figure 10. Forward voltage drop versus forward current (per diode)** **Figure 11. Reverse safe operating area (tp < 1 µs and Tj < 150 °C)** **==> picture [430 x 138] intentionally omitted <==** **----- Start of picture text -----**<br> 40 IFM(A) 30.0 Iarm (A)<br>35 eee | | | | | | | | Tj = 125 °C Yioei tA 29.0 \ To 2 Iarm (Varm) 150 °C, 1 µs<br>FEE (Maximum values) Eff 28.0 PROEPPrrrrer<br>30 | | | | | [ty] [|_| x | | N<br>A A 27.0 P[TN | | | te ft tf<br>25 FREER| | | | | [| Tj = 125 °C [7 Vi IALAEtt 26.0 TENSE<br>2015 Poeee 2 CoC eeeer (Typical values) iwPYLEa a 25.024.023.0 NeTTSNae<br>10 PEREZaEE AA (Maximum values)Tj = 25 °C |FA| | 22.0 OS~<br>5<br>0 PEEHE EB a Z| A VFM(V) | | 21.020.0 TT Pt | Varm (V) eae\<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 100 105 110 115 120 125 130 135 140 145 150<br>**----- End of picture text -----**<br> 4/10 Doc ID 018718 Rev 1 **STPS40M80C** **Characteristics** ## **Figure 12. Thermal resistance junction to ambient versus copper surface under tab for D[2] PAK** **==> picture [210 x 137] intentionally omitted <==** **----- Start of picture text -----**<br> Rth(j-a)(°C/W)<br>80<br>epoxy printed board copper thickness = 35 µm<br>70<br>60 D2PAK<br>50<br>40<br>30<br>20<br>10<br>0 SCu(cm2)<br>0 5 10 15 20 25 30 35 40<br>**----- End of picture text -----**<br> 5/10 Doc ID 018718 Rev 1 **STPS40M80C** **Package information** ## **2 Package information** - Epoxy meets UL94, V0 - Cooling method: by conduction (C) - Recommended torque value: 0.4 to 0.6 N·m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK[®] is an ST trademark. **Table 5. TO-220AB dimensions** |**L2**|||||**A**<br>**C**<br>**D**<br>**L7**<br>**E**<br>**M**|**Ref.**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**| |---|---|---|---|---|---|---|---|---|---|---| ||||||||**Millimeters**||**Inches**|| ||||||||**Min.**|**Max.**|**Min.**|**Max.**| |||||||A|4.40|4.60|0.173|0.181| |||||||C|1.23|1.32|0.048|0.051| ||||**H2**|**L5**<br>**L6**<br>**L9**<br>**L4**||||||| |||||||D|2.40|2.72|0.094|0.107| |||**D**|**ia**|||||||| |||||||E|0.49|0.70|0.019|0.027| |||||**L5**||F|0.61|0.88|0.024|0.034| ||**F2**<br>**F1**|||||||||| |||||||F1|1.14|1.70|0.044|0.066| |||||||||||| |||||||||||| |||||||F2|1.14|1.70|0.044|0.066| |||||||G|4.95|5.15|0.194|0.202| ||||**G**|||G1|2.40|2.70|0.094|0.106| ||**F**<br>**G1**|||||H2|10|10.40|0.393|0.409| |||||||L2|16.4 Typ.||0.645 Typ.|| |||||||L4|13|14|0.511|0.551| |||||||L5|2.65|2.95|0.104|0.116| |||||||L6|15.25|15.75|0.600|0.620| |||||||||||| |||||||L7|6.20|6.60|0.244|0.259| |||||||L9|3.50|3.93|0.137|0.154| |||||||M|2.6 Typ.||0.102 Typ.|| |||||||Dia.|3.75|3.85|0.147|0.151| 6/10 Doc ID 018718 Rev 1 **STPS40M80C** **Package information** |**Table 6.**|**Table 6.**|**Table 6.**|**D2PAK dimensions**|**D2PAK dimensions**||||||| |---|---|---|---|---|---|---|---|---|---|---| |**L**|||||**SS THAN 2mm**<br>**A**<br>**D**<br>**R**<br>**V2**|**Ref.**|**Dimensions**|||| ||||||||**Millimeters**||**Inches**|| ||||||||**Min.**|**Max.**|**Min.**|**Max.**| ||**L2**|||**E NO LE**<br>**C2**<br>**A2**<br>**M**<br>**C**<br>*||||||| |||||||A|4.40|4.60|0.173|0.181| |||||||||||| |||||||A1|2.49|2.69|0.098|0.106| |||||||A2|0.03|0.23|0.001|0.009| ||**L3**|||||B|0.70|0.93|0.027|0.037| |||||||B2<br>|1.14<br>|1.70<br>|0.045<br>|0.067<br>| |||||||C|0.45|0.60|0.017|0.024| |||||||C2|1.23|1.36|0.048|0.054| |||||||||||| |||||||D|8.95|9.35|0.352|0.368| |||||||E|10.00|10.40|0.393|0.409| |||||||G|4.88|5.28|0.192|0.208| |||||||L|15.00|15.85|0.590|0.624| |||||||L2|1.27|1.40|0.050|0.055| |||||||L3|1.40|1.75|0.055|0.069| |||||||M|2.40|3.20|0.094|0.126| |||||||||||| |||||||R|0.40 typ.||0.016 typ.|| |||||||V2|0°|8°|0°|8°| **==> picture [405 x 154] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 13. D [2] PAK footprint (dimensions in mm)<br>16.90<br>10.30 5.08<br>1.30<br>3.70<br>8.90<br>**----- End of picture text -----**<br> 7/10 Doc ID 018718 Rev 1 **STPS40M80C** **Package information** |**Table 7.**|**Table 7.**||**I2PAK d**|**I2PAK d**|**imensions**|**imensions**|||||| |---|---|---|---|---|---|---|---|---|---|---|---| |**L2**<br>**L**||||||**A1**<br>**c**<br>**c2**<br>**A**|**Ref.**|**Dimensions**|||| |||||||||**Millimeters**||**Inches**|| |||||||||**Min.**|**Max.**|**Min.**|**Max.**| |||||**E**|||||||| ||||||||A|4.40|4.60|0.173|0.181| ||||||||A1|2.40|2.72|0.094|0.107| ||||||||b|0.61|0.88|0.024|0.035| ||||||||b1|1.14|1.70|0.044|0.067| ||||||||c|0.49|0.70|0.019|0.028| ||||||||||||| |||**L1**||**e**|||c2|1.23|1.32|0.048|0.052| ||||||||D|8.95|9.35|0.352|0.368| ||||||||e|2.40|2.70|0.094|0.106| ||||||||e1|4.95|5.15|0.195|0.203| ||||||||E|10|10.40|0.394|0.409| ||||||||L|13|14|0.512|0.551| ||||||||||||| ||||||||L1|3.50|3.93|0.138|0.155| ||||||||L2|1.27|1.40|0.050|0.055| 8/10 Doc ID 018718 Rev 1 **STPS40M80C** **Ordering information** ## **3 Ordering information** ## **Table 8. Ordering information** |**Order code**|**Marking**|**Package**|**Weight**|**Base qty **|**Delivery mode**| |---|---|---|---|---|---| |STPS40M80CT|STPS40M80CT|TO-220AB|1.9 g|50|Tube| |STPS40M80CR|STPS40M80CR|I2PAK|1.49 g|50|Tube| |STPS40M80CG-TR|STPS40M80CG|D2PAK|1.48 g|1000|Tape and reel| ## **4 Revision history** **Table 9. Revision history** |**Date**|**Revision**|**Changes**| |---|---|---| |11-Apr-2011|1|First issue.| 9/10 Doc ID 018718 Rev 1 **STPS40M80C** ## **Please Read Carefully:** Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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All other names are the property of their respective owners. © 2011 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America **www.st.com** 10/10 Doc ID 018718 Rev 1
Updated at April 29, 2026
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