STPS30SM100SG-TR

Small Signal Schottky Diode, Single, 100 V, 30 A, 870 mV, 530 A, 150 °C

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Manufacturer: STMICROELECTRONICS
Product type:
Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):30A; Forward Voltage VF Max:870mV; Forward Surge Current Ifsm Max:530A; Operating Temperatur
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 3Pins
Product Range: STPS3
Qualification: -
Diode Mounting: Surface Mount
Diode Case Style: TO-263 (D2PAK)
Diode Configuration: Single
Forward Voltage Max: 870mV
Forward Surge Current: 530A
Reverse Recovery Time: -
Average Forward Current: 30A
Operating Temperature Max: 150°C
Repetitive Peak Reverse Voltage: 100V

Delivery and price
Units per pack	5000
Price	0.526 €
Current stock	500+
Lead time	30 days

Datasheet

Power Schottk rectifier y 

**==> picture [61 x 39] intentionally omitted <==**

## **Features** 

- High current capability 

- Avalanche rated 

- Low forward voltage drop current 

- High frequency operation 

- Insulated package: 

   - Insulation voltage 2000 V rms 

   - Package capacitance = 12 pF 

## **Description** 

This single Schottky rectifier is suited for high frequency switch mode power supply. 

Packaged in TO-220AB, TO-220AB narrow leads, TO-220FPAB, D[2] PAK and I[2] PAK, this device is intended to be used in notebook, game station and desktop adaptors, providing in these applications a good efficiency at both low and high load. 

## **Figure 1. Electrical characteristics[(a)]** 

**==> picture [172 x 165] intentionally omitted <==**

**----- Start of picture text -----**<br>
I<br>V<br>"Forward"<br>I<br>2 x IO X<br>IF<br>IO X<br>VRRM<br>VAR VR<br>V<br>IR<br>VTo VF(Io) VF VF(2xIo)<br>"Reverse"<br>IAR<br>**----- End of picture text -----**<br>


## **STPS30SM100S** 

**==> picture [190 x 344] intentionally omitted <==**

**----- Start of picture text -----**<br>
A(1)<br>K(2)<br>A(3)<br>K<br>A<br>A<br>A<br>A K K<br>TO-220AB I [2] PAK<br>STPS30SM100ST STPS30SM100SR<br>K<br>A<br>A<br>A K<br>A<br>TO-220FPAB D [2] PAK<br>STPS30SM100SFP STPS30SM100SG-TR<br>K<br>A<br>A K<br>TO-220AB narrow leads<br>STPS30SM100STN<br>**----- End of picture text -----**<br>


## **Table 1. Device summary** 

|IF(AV)|30 A|
|---|---|
|VRRM|100 V|
|Tj (max)|150 °C|
|VF(typ)|0.420 V|



- a. VARM and IARM must respect the reverse safe operating area defined in _Figure 13._ VAR and IAR are pulse measurements (tp < 1 µs). VR, IR, VRRM and VF, are static characteristics 

September 2011 

1/11 

Doc ID 15517 Rev 4 

_www.st.com_ 

**Characteristics** 

**STPS30SM100S** 

## **1 Characteristics** 

**Table 2. Absolute ratings (limiting values with terminals 1 and 3 short circuited)** 

|**Symbol**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|
|VRRM|Repetitive peak reverse voltage||100|V|
|IF(RMS)|Forward current rms||60|A|
|IF(AV)|Average forward currentδ= 0.5|TO-220AB, TO-220AB narrow leads,<br>D2PAK, I2PAK, Tc= 125 °C|30|A|
|||TO-220FPAB, Tc= 80 °C|||
|IFSM|Surge non repetitive forward current|tp= 10 ms sinusoidal,<br>terminals 1 and 3 short circuited|530|A|
|PARM<br>(1)|Repetitive peak avalanche power|tp= 1 µs   Tj= 25 °C|21500|W|
|VARM<br>(2)|Maximum repetitive peak avalanche<br>voltage|tp< 1 µs   Tj< 150 °C<br>IAR< 53.8 A|120|V|
|VASM<br>(2)|Maximum single pulse peak<br>avalanche voltage|tp< 1 µs   Tj< 150 °C<br>IAR< 53.8 A|120|V|
|Tstg|Storage temperature range||-65 to + 175|°C|
|Tj|Maximum operating junction temperature(3)||150|°C|



1. For temperature or pulse time duration deratings, refer to _Figure 4._ and _Figure 5._ . More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025. 

2. Refer to _Figure 13._ 

3. 

dPtot 1 < condition to avoid thermal runaway for a diode on its own heatsink dTj Rth(j-a) 

## **Table 3. Thermal resistance** 

|**Table 3.**|**Thermal resistance**||||
|---|---|---|---|---|
|**Symbol**||**Parameter**|**Value**|**Unit**|
|Rth(j-c)|Junction to case|TO-220AB, TO-220AB narrow leads,<br>D2PAK, I2PAK|1|°C/W|
|||TO-220FPAB|4||



## **Table 4. Static electrical characteristics (terminals 1 and 3 short circuited)** 

|**Symbol**|**Parameter**|**Test conditions**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|IR<br>(1)|Reverse leakage current|Tj= 25 °C|VR= VRRM|||45|µA|
|||Tj= 125 °C|||15|45|mA|
|VF<br>(2)|Forward voltage drop|Tj= 25 °C|IF= 5 A||500||mV|
|||Tj= 125 °C|||420|||
|||Tj= 25 °C|IF= 10A||600|670||
|||Tj= 125 °C|||505|560||
|||Tj= 25 °C|IF= 30 A||780|870||
|||Tj= 125 °C|||630|690||



1. Pulse test: tp = 5 ms, δ < 2% 

2. Pulse test: tp = 380 µs, δ < 2% 

To evaluate the conduction losses use the following equation: P = 0.580 x IF(AV) + 0.0033 x IF2(RMS) 

2/11 

Doc ID 15517 Rev 4 

**STPS30SM100S** 

**Characteristics** 

**Figure 2. Average forward power dissipation Figure 3. Average forward current versus versus average forward current ambient temperature (** δ **= 0.5)** 

**==> picture [438 x 520] intentionally omitted <==**

**----- Start of picture text -----**<br>
PF(av)(W) IF(av)(A)<br>30 35<br>25 Pit tet et δ=0.1 Pe δ=0.2 pt ee δ=0.5 tt δ=1 30 Pi foe TEE Rth(j-a)=Rth(j-c) TO-220AB, TO-220AB narrow leads, I TT [2] PAK, D [2] PAK |<br>PP pip pt = a a Se ee<br>20 Fit tt δ=0.05 Ao 25 ee<br>SEP e ee 20 Se TO-220FPAB S e<br>15 Lt | | iAyYe eel tt [ f [ t INE<br>15<br>||] | VV iat tt | tt ee<br>10 enLt | AAA77 anestT tt T 10 pt T | S | | Rth(j-a)=15°C/W PPSPKNee<br>5<br>Br 5 Aq O K<br>( A F | IF(av)(A) | || δ [=tp/T] tp δ [=tp/T] tp Tamb(°C) mS<br>0 Lf i i i i | | 0 a mo SSNSEAN<br>0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150<br>Figure 4. Normalized avalanche power  Figure 5. Normalized avalanche power<br>derating versus pulse duration derating versus junction<br>temperature<br>1 PPARMARM(1µs)(t p) 1.2 PARMPARM(25 °C)(Tj)<br>|a ~ 1 E+++++++++Ne+ + ++ + + + ++ ++ + + +<br>0.1 eeEI eeIE TINETEPTT 0.8 aERSEERE EEE EEE EEE EEE EEE EE<br>=e ee<br>eh 0.6 Pa<br>0.01 Rast 0.4 ee<br>AIEEE) | ESEEEGE FERRERS SESSESE<br>REE 0.2 REEREE<br>0.001 ee t p(µs) 0 0 TPE EEE EER T (°C)j eee TT Ep]<br>0.01 PLEA 0.1 ETTT 1 1 10 100 1000 25 SEL 50 75 a 100  a 125 150<br>Figure 6. Non repetitive surge peak forward  Figure 7. Non repetitive surge peak forward<br>current versus overload  current versus overload duration,<br>duration, maximum values maximum values (TO-220FPAB)(TO-220FPAB)TO-220FPAB))<br>440 IM(A) 200 IM(A)<br>400 co TO-220AB, TO-220AB narrow leads, I [2] PAK, D [2] PAK 180 a TO-220FPAB 1<br>oe  et eer Ee<br>360 PSHee ee it 160 SoR S<br>320280 PoPSCDS== PENTASPSSS 140120 PSSATTa oP OSNS St<br>240200 esESSEPSBa a a; SrS d TC=25°C 10080 SEteSSeSe es HHS S  EH TC=25°C<br>160 P t SAE S TC=75°C 60 aSEa tn EE TC=75°C<br>120 s ime PT<br>80 IM TC=125°C 40 IM TC=125°C<br>40 δ =0.5 t t(s) 20 δ =0.5 t t(s)<br>0 AULA TA H= EHH} a HHH 0 iha<br>1.E-03 1.E-02 1.E-01 1.E+00 1.E-03 1.E-02 1.E-01 1.E+00<br>**----- End of picture text -----**<br>


## **Figure 4. Normalized avalanche power derating versus pulse duration** 

## **Figure 6. Non repetitive surge peak forward current versus overload duration, maximum values** 

**Figure 7. Non repetitive surge peak forward current versus overload duration, maximum values (TO-220FPAB)(TO-220FPAB)TO-220FPAB))** 

3/11 

Doc ID 15517 Rev 4 

**Characteristics** 

**STPS30SM100S** 

## **Figure 8. Relative variation of thermal impedance junction to case versus pulse duration** 

## **Figure 9. Relative variation of thermal impedance junction to case versus pulse duration (TO-220FPAB)** 

**==> picture [434 x 134] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.0 Zth(j-c)/Rth(j-c) 1.0 Zth(j-c)/Rth(j-c)<br>0.9 FO TO-220AB, TO-220AB narrow leads, I [2] PAK, D [2] PAK ee 0.9 TO-220FPAB a<br>0.8 fota oT TU TTY TT ETTA eeTTT) 0.8 EE a EET<br>a a a 0<br>0.7 fota TEOGPT TTT > 0.7 aa aa O2 Y<br>0.6 a O OOO 2 0.6 a a2<br>0.5 aeeeOOO,eee Serer 0.5 CeEHH FHA<br>0.4 a 0.4 A<br>a OeOe 0a aa aa a 28<br>0.3 Single pulse 0.3<br>0.2 PE l= J RE T 0.2 er Single pulse eeea zeit ae eeaaa T<br>0.1 tp(s) δ [=tp/T] tp 0.1 tp(s) δ [=tp/T] tp<br>es ee TT rere nn eS ur ea<br>0.0 a OG OG 0.0 L | TPT [ TT TT TT<br>1.E-03 1.E-02 1.E-01 1.E+00 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01<br>**----- End of picture text -----**<br>


## **Figure 10. Reverse leakage current versus reverse voltage applied  (typical values)** 

**Figure 11. Junction capacitance versus reverse voltage applied (typical values)** 

**==> picture [434 x 131] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.E+02 IR(mA) 10000 C(pF)<br>Tj=150°C F=1MHz<br>VOSC=30mVRMS<br>1.E+01 Tj=125°C Tj=25°C<br>ry Eee SERSimentl<br>eaaSa=SgeSS==—=—Le Tj=100°C a<br>1.E+00<br>e e Tj=75°C e 1000 PEATE ETT<br>1.E-01 SSS eee eee _——ne<br>Tj=50°C<br>1.E-02 S55s5=s290Eee T | j=25°C ===ealBoa ESSnn RST<br>=== = SS a hN<br>VR(V) VR(V)<br>1.E-03 MPT TF 100<br>SaeEeeSSSSEESeeNES= en<br>0 10 20 30 40 50 60 70 80 90 100 1 10 100<br>**----- End of picture text -----**<br>


## **Figure 12. Forward voltage drop versus forward current (terminals 1 and 3 short circuited)** 

**Figure 13. Reverse safe operating area (tp < 1 µs and Tj < 150 °C)** 

**==> picture [432 x 131] intentionally omitted <==**

**----- Start of picture text -----**<br>
IFM(A) Iarm (A)<br>60 65<br>[| [| | | [| | tf Yet ft fey 63<br>50 (Maximum values)Tj=125°C 61<br>|eeft ft ioe eeeee 59 Forbidden area<br>4030 eeeeee (TypicalTj=125°Cvalues) ree (Maximum values)Tj=25°C 57555351 Operating area<br>20 49<br>a ee r<br>47<br>10 PotetT TEee [Ye] VFM(V) 4543 Varm (V)<br>0 | of err eTSe eeeoT 100 110 120 130 140 150<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>**----- End of picture text -----**<br>


4/11 

Doc ID 15517 Rev 4 

**STPS30SM100S** 

**Package information** 

## **2 Package information** 

- Epoxy meets UL94, V0 

- Cooling method: by conduction (C) 

- Recommended torque value: 0.4 to 0.6 N·m 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK[®] is an ST trademark. 

**Table 5. TO-220AB dimensions** 

|**L2**|||||**A**<br>**C**<br>**D**<br>**L7**<br>**E**<br>**M**|**Ref.**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|
|---|---|---|---|---|---|---|---|---|---|---|
||||||||**Millimeters**||**Inches**||
||||||||**Min.**|**Max.**|**Min.**|**Max.**|
|||||||A|4.40|4.60|0.173|0.181|
|||||||C|1.23|1.32|0.048|0.051|
||||**H2**|**L5**<br>**L6**<br>**L9**<br>**L4**|||||||
|||||||D|2.40|2.72|0.094|0.107|
|||**D**|**ia**||||||||
|||||||E|0.49|0.70|0.019|0.027|
|||||**L5**||F<br>|0.61|0.88|0.024|0.034|
||**F2**<br>**F1**||||||||||
|||||||F1|1.14|1.70|0.044|0.066|
||||||||||||
|||||||F2|1.14|1.70|0.044|0.066|
|||||||G|4.95|5.15|0.194|0.202|
||||**G**|||G1|2.40|2.70|0.094|0.106|
||**F**<br>**G1**|||||H2|10|10.40|0.393|0.409|
|||||||L2|16.4 typ.||0.645 typ.||
|||||||L4|13|14|0.511|0.551|
|||||||L5|2.65|2.95|0.104|0.116|
|||||||L6|15.25|15.75|0.600|0.620|
||||||||||||
|||||||L7|6.20|6.60|0.244|0.259|
|||||||L9|3.50|3.93|0.137|0.154|
|||||||M|2.6 typ.||0.102 typ.||
|||||||Diam.|3.75|3.85|0.147|0.151|



5/11 

Doc ID 15517 Rev 4 

**STPS30SM100S** 

**Package information** 

**Table 6. TO-220AB narrow leads dimensions** 

|L20<br>b1(x3)<br>e<br><br>1<br>2|||||||F<br>D1<br>1<br>A<br><br>C|F<br>D1<br>1<br>A<br><br>C|**Ref.**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||||||**Millimeters**|||**Inches**|||
|||||||||||**Min.**|**Typ.**|**Max.**|**Min.**|**Typ.**|**Max.**|
||||||||||A|4.40||4.60|0.17||0.18|
||||||||||b|0.61||0.88|0.024||0.034|
|||E||||||||||||||
||||||||||b1|0.95||1.20|0.037||0.047|
|||||||||||||||||
||||||||||c|0.48||0.70|0.019||0.027|
||||Q|||D<br>H|1|||||||||
||||||||||D|15.25||15.75|0.60||0.62|
||||L1|||||||||||||
||||||||||D1|1.27|||0.05|||
||||||||D1|||||||||
|||||||||||||||||
||||||||||E|10.00||10.40|0.39||0.41|
||||||||||e|2.40||2.70|0.094||0.106|
|||e1<br><br>3||||J1||||||||||
||||||||||e1|4.95||5.15|0.19||0.20|
||||||||||F|1.23||1.32|0.048||0.052|
||||||||||H1|6.20||6.60|0.24||0.26|
||||||||||J1|2.40||2.72|0.095||0.107|
||||||||||L|13.00||14.00|0.51||0.55|
||||||||||L1|2.60||2.90|0.102||0.114|
|||||||||||||||||
||||||||||L20|15.40|||0.61|||
||||||||||L30|28.90|||1.14|||
||||||||||∅P|3.75||3.85|0.147||0.151|
||||||||||Q|2.65||2.95|0.104||0.116|



6/11 

Doc ID 15517 Rev 4 

**STPS30SM100S** 

**Package information** 

**Table 7. TO-220FPAB dimensions** 

|**L3**|||||**L7**<br>**E**|**Ref.**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|
|---|---|---|---|---|---|---|---|---|---|---|
||||||||**Millimeters**||**Inches**||
||||||||**Min.**|**Max.**|**Min.**|**Max.**|
|||||||A|4.4|4.6|0.173|0.181|
|||||**A**<br>**B**<br>**Dia**<br>**L6**<br>**L5**<br>**F1**<br>**F2**<br>**F**<br>**D**|||||||
|||||||B|2.5|2.7|0.098|0.106|
||||**H**|||D|2.5|2.75|0.098|0.108|
||||||||||||
|||||||E|0.45|0.70|0.018|0.027|
||**L4**<br>**L2**||||||||||
|||||||F|0.75|1|0.030|0.039|
|||||||F1|1.15|1.70|0.045|0.067|
||||||||||||
|||||||F2|1.15|1.70|0.045|0.067|
|||||||G|4.95|5.20|0.195|0.205|
||||**G1**<br>**G**|||G1|2.4|2.7|0.094|0.106|
|||||||H|10|10.4|0.393|0.409|
|||||||L2|16 Typ.||0.63 Typ.||
|||||||L3|28.6|30.6|1.126|1.205|
|||||||L4|9.8|10.6|0.386|0.417|
|||||||L5|2.9|3.6|0.114|0.142|
||||||||||||
|||||||L6|15.9|16.4|0.626|0.646|
|||||||L7|9.00|9.30|0.354|0.366|
|||||||Dia.|3.00|3.20|0.118|0.126|



7/11 

Doc ID 15517 Rev 4 

**STPS30SM100S** 

**Package information** 

Devices in I[2] PAK with nickel-plated back frame must NOT be mounted by frame soldering like SMDs. Such devices are intended to be through-hole mounted ONLY and in no circumstances shall ST be held liable for any lack of performance or damage arising out of soldering of nickel-plated back frames. 

**Table 8. I[2] PAK dimensions** 

|**L2**<br>**L**|**L2**<br>**L**|||||**A1**<br>**c**<br>**c2**<br>**A**|**Ref.**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|
|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||||**Millimeters**||**Inches**||
|||||||||**Min.**|**Max.**|**Min.**|**Max.**|
|||||**E**||||||||
||||||||A|4.40|4.60|0.173|0.181|
||||||||A1|2.40|2.72|0.094|0.107|
||||||||b|0.61|0.88|0.024|0.035|
||||||||b1|1.14|1.70|0.044|0.067|
||||||||c|0.49|0.70|0.019|0.028|
|||||||||||||
|||**L1**||**e**|||c2|1.23|1.32|0.048|0.052|
||||||||D|8.95|9.35|0.352|0.368|
||||||||e|2.40|2.70|0.094|0.106|
||||||||e1|4.95|5.15|0.195|0.203|
||||||||E|10|10.40|0.394|0.409|
||||||||L|13|14|0.512|0.551|
|||||||||||||
||||||||L1|3.50|3.93|0.138|0.155|
||||||||L2|1.27|1.40|0.050|0.055|



8/11 

Doc ID 15517 Rev 4 

**STPS30SM100S** 

**Package information** 

**==> picture [148 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Table 9. D [2] PAK dimensions<br>**----- End of picture text -----**<br>


|**L**||||||**ESS THAN 2mm**<br>**A**<br>**D**<br>**R**<br>**V2**|**Ref.**|**Ref.**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||||||**Millimeters**||**Inches**||
||||||||||**Min.**|**Max.**|**Min.**|**Max.**|
||**L2**||||||||||||
||||||||A||4.40|4.60|0.173|0.181|
||||||||||||||
||||||||A1||2.49|2.69|0.098|0.106|
||||||||A2||0.03|0.23|0.001|0.009|
||**L3**||||||B||0.70|0.93|0.027|0.037|
||||||||B2<br>||1.14<br>|1.70<br>|0.045<br>|0.067<br>|
||||||||C||0.45|0.60|0.017|0.024|
||||||||C2||1.23|1.36|0.048|0.054|
||||||||||||||
||||||||D||8.95|9.35|0.352|0.368|
||||||||E||10.00|10.40|0.393|0.409|
||||||||G||4.88|5.28|0.192|0.208|
||||||||L||15.00|15.85|0.590|0.624|
||||||||L2||1.27|1.40|0.050|0.055|
||||||||L3||1.40|1.75|0.055|0.069|
||||||||M||2.40|3.20|0.094|0.126|
||||||||||||||
||||||||R||0.40 typ.||0.016 typ.||
||||||||V2||0°|8°|0°|8°|
|**Figure 14.**<br>**D2PAK footprint(di**||||||**mensions in mm)**|||||||
|**10.30**|||||||||||||
|||||||**16.90**|||||||
||||||||||||||
||||||||||||||
||||||||||||||
||||||||||||||
||||||||||||||
||||||||||||||
|||||||**8.90**|||||||
||||||||||||||
||||||||||||||
||||||||||||||
||||||||||||||



9/11 

Doc ID 15517 Rev 4 

**Ordering information** 

**STPS30SM100S** 

## **3 Ordering information** 

## **Table 10. Ordering information** 

|**Order code**|**Marking**|**Package**|**Weight**|**Base qty**|**Delivery mode**|
|---|---|---|---|---|---|
|STPS30SM100ST|PS30SM100ST|TO-220AB|2.2 g|50|Tube|
|STPS30SM100SFP|PS30SM100SFP|TO-220FPAB|1.70 g|50|Tube|
|STPS30SM100SR|PS30SM100SR|I2PAK|1.49 g|50|Tube|
|STPS30SM100SG-TR|PS30SM100SG|D2PAK|1.48 g|1000|Tape and reel|
|STPS30SM100STN|PS30SM100STN|TO-220AB<br>narrow leads|1.9 g|50|Tube|



## **4 Revision history** 

## **Table 11. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|25-Mar-2009|1|First issue|
|16-Apr-2010|2|Updated package graphic for TO-220AB on front page and in<br>_Table 5_.|
|28-Jan-2011|3|Added warning paragraph above_Table 8_.|
|15-Sep-2011|4|Added TO-220AB narrow leads package.|



10/11 

Doc ID 15517 Rev 4 

**STPS30SM100S** 

## **Please Read Carefully:** 

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Updated at April 29, 2026

STMicroelectronics is a global leader in the semiconductor industry, recognized for developing highly integrated, energy-efficient solutions that power modern electronics. With a strong focus on innovation, ST provides a comprehensive portfolio of microelectronics that address the demanding requirements of industrial, automotive, communications, and consumer applications. Our extensive selection of STMicroelectronics components is built around a robust lineup of discrete semiconductors and circuit protection devices. We offer a wide variety of single MOSFETs, Schottky diodes, and fast and ultrafast recovery rectifier diodes, designed to deliver exceptional efficiency and thermal performance in power management and conversion systems. For robust circuit protection, our inventory features hundreds of transient voltage suppressors and TVS diodes that safeguard sensitive electronic components against destructive voltage spikes. In addition to core power discretes like TRIACs, SCRs, bipolar transistors, and single IGBTs, our STMicroelectronics range includes specialized integrated passive filters and MEMS sensors. Furthermore, ST offers advanced integrated passive devices, such as baluns and RF filters, which utilize high-quality monolithic RF IPD processes on glass or high-resistance silicon substrates. These components provide competitive cost structures, reduced power losses, and simplified RFIC-to-antenna matching, ensuring optimal system performance and delivering the reliability required for next-generation wireless and power designs.

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