STPS30M60DJF-TR

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## **STPS30M60DJF** 

## High efficiency power Schottky diode 

**Datasheet** − **production data** 

## **Features** 

- Very low conduction losses 

- Low forward voltage drop 

- Low thermal resistance 

- High specified avalanche capability 

- High integration 

- ECOPACK[®] 2 compliant component 

## **Description** 

The STPS30M60DJF is a power Schottky rectifier, suited for high frequency switch mode power supply and DC to DC converters. 

Packaged in PowerFLAT™, this device is intended to be used in notebook, game station and desktop adapters, providing in these applications a good efficiency at both low and high load. Its low profile was especially designed to be used in applications with space-saving constraints. 

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A<br>K<br>A<br>K K<br>A A<br>PowerFLAT 5x6<br>STPS30M60DJF<br>**----- End of picture text -----**<br>


## **Table 1. Device summary** 

|**Symbol**|**Value**|
|---|---|
|IF(AV)|30 A|
|VRRM|60 V|
|VF(typ)|0.46 V|
|Tj(max)|150 °C|



TM: PowerFLAT is a trademark of STMicroelectronics 

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April 2012 

Doc ID 023120 Rev 1 

This is information on a product in full production. 

_www.st.com_ 

**Characteristics** 

**STPS30M60DJF** 

## **1 Characteristics** 

**Table 2. Absolute ratings (limiting values, anode terminals 1 and 3 short circuited)** 

|**Symbol**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|
|VRRM|Repetitive peak reverse voltage||60|V|
|IF(RMS)|Forward rms current||45|A|
|IF(AV)|Average forward currentδ= 0.5|Tc= 100 °C|30|A|
|IFSM|Surge non repetitive forward current|tp= 10 ms sinusoidal|250|A|
|PARM<br>(1)|Repetitive peak avalanche power||3500|W|
|VARM|Maximum repetitive peak avalanche<br>voltage|tp< 1 µs, Tj< 150 °C<br>IAR< 13 A|80|V|
|Tstg|Storage temperature range||-65 to +175|°C|
|Tj|Maximum operating junction temperature(2)||150|°C|



1. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the STMicroelectronics’ application notes AN1768 and AN2025. 

dPtot 1 2. < condition to avoid thermal runaway for a diode on its own heatsink dTj Rth(j-a) 

## **Table 3. Thermal resistance** 

|**Table 3.**|**Thermal resistance**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|Rth(j-c)|Junction to case|2.0|°C/W|



## **Table 4. Static electrical characteristics (anode terminals short circuited)** 

|**Symbol**|**Parameter**|**Test conditions**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|IR<br>(1)|Reverse leakage<br>current|Tj= 25 °C|VR= VRRM|-|-|90|µA|
|||Tj= 125 °C||-|20|50|mA|
|VF<br>(2)|Forward voltage drop|Tj= 25 °C|IF= 15 A|-|-|0.59|V|
|||Tj= 125 °C||-|0.46|0.52||
|||Tj= 25 °C|IF= 30 A|-|-|0.72||
|||Tj= 125 °C||-|0.57|0.67||



1. Pulse test: tp = 5 ms, δ < 2% 

2. Pulse test: tp = 380 µs, δ < 2% 

To evaluate the conduction losses use the following equation: P = 0.55 x IF(AV) + 0.004 x IF2(RMS) 

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**Characteristics** 

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Figure 1. Average forward power dissipation  Figure 2. Average forward current versus<br>versus average forward current ambient temperature ( δ  = 0.5)<br>30 PF(AV)(W) 35 IF(AV)(A)<br>Rth(j-a) = Rth(j-c)<br>25 SEEEEEEEEE δ = 0.5 EEE 30 | | [| | | | | [| | [<br>Se e e δ = 1 |. EES a a a<br>25<br>20 ptt tt te et δ = 0.2 tt ree27 ee 2 ee OOee<br>20<br>δ = 0.1<br>15 Jo δ = 0.05 Of ee T a a<br>15<br>10 Oh δ = t a p / T tp  || 10  EERE<br>T<br>— Sf fi a<br>5 5<br>| | yer Tt ag oeeee<br>IF(AV)(A) δ = tp / T tp Tamb(°C)<br>0 fi; i tii ttt tf 0 ee VY<br>0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150<br>Figure 3. Normalized avalanche power  Figure 4. Normalized avalanche power<br>derating versus pulse duration derating versus junction<br>temperature<br>PARM(tp) PARM(Tj)<br>PARM(1 µs) PARM(25 °C)<br>1 se ee ee ee eee 1.2 a<br>a | O C<br>1<br>SS ein meee man meta meen GC EE EEESEEEEEETEEESEEEE<br>0.1 UEC SEE | 0.8 BSS EEE EERE E ESSE<br>a 0 | ~ 0.6 a a a<br>0.01 NR 0.4 EP<br>0.001 ee re tp(µs) 0.20 Poy T (°C)j<br>Ten Connie ME Pec I a<br>0.01 0.1 1 10 100 1000 25 50 75 100 125 150<br>Figure 5. Non repetitive surge peak forward  Figure 6. Relative variation of thermal<br>current versus overload duration  impedance junction to case versus<br>(maximum values) pulse durationulse duration<br>280 IM(A) 1.0 Zth(j-c)/Rth(j-c)<br>240 So ——— a $|>  See 0.9<br>a 0.8 |<br>200 ot 0.7 eeea 2<br>a ee Ee<br>SS Corn oi<br>160 0.6<br>120 SCORSESESSL ~ SE S Tc = 25 °C | 0.50.4 ASeSE|<br>80 eS Tc = 75 °C nt | 0.3 ERSTE EES Er<br>SS S TY<br>40 IM 227 [2] TR E Tc = 125 °C | 0.2 S Single pulse ERS<br>t 0.1<br>0 SS δ = 0.5 PEa a a rt t(s) 0.0 Pocee eeot th tp(s)<br>1.E-03 1.E-02 1.E-01 1.E+00 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00<br>**----- End of picture text -----**<br>


**Figure 6. Relative variation of thermal impedance junction to case versus pulse durationulse duration** 

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**Characteristics** 

**STPS30M60DJF** 

## **Figure 7. Reverse leakage current versus reverse voltage applied (typical values)** 

## **Figure 8. Junction capacitance versus reverse voltage applied (typical values)** 

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1.E+03 IR(mA) 10000 C(pF)<br>F = 1 MHz<br>Vosc = 30 mVRMS<br>1.E+02 T = 25 °C<br>j<br>1.E+01 Tj = 150 °C<br>Tj = 125 °C<br>1.E+00 Tj = 100 °C 1000<br>1.E-01 Tj = 75 °C<br>Tj = 50 °C<br>1.E-02<br>Tj = 25 °C<br>VR(V) VR(V)<br>1.E-03 100<br>0 5 10 15 20 25 30 35 40 45 50 55 60 1 10 100<br>**----- End of picture text -----**<br>


## **Figure 9. Forward voltage drop versus forward current** 

## **Figure 10. Thermal resistance junction to ambient versus copper surface under tab** 

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100.0 IFM(A) 250 Rth(j-a)(°C/W)<br>epoxy printed board FR4,<br>Tj = 125 °C copper thickness = 35 µm<br>(Maximum values) 200<br>10.0 Tj = 125 °C<br>(Typical values) 150<br>100<br>1.0 Tj = 25 °C<br>(Maximum values)<br>50<br>VFM(V) Scu(cm²)<br>0.1 0<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1 2 3 4 5 6 7 8 9 10<br>**----- End of picture text -----**<br>


## **Figure 11. Reverse safe operating area (tp < 1 µs and Tj < 150 °C)** 

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Iarm (A)<br>20<br>15<br>10<br>Varm<br>5<br>60 65 70 75 80 85 90 95 100 105 110<br>**----- End of picture text -----**<br>


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**Package information** 

## **2 Package information** 

- Epoxy meets UL94,V0 

- Lead-free package 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK[®] is an ST trademark. 

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Table 5. PowerFLAT 5x6 dimensions<br>**----- End of picture text -----**<br>


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Dimensions<br>Ref. Millimeters Inches<br>D2 Min. Typ. Max. Min. Typ. Max.<br>E2 A 0.80 1.00 0.031 0.039<br>A1 0.02 0.05 0.001 0.002<br>K<br>A2 0.25 0.010<br>e b L b 0.30 0.50 0.012 0.020<br>A<br>D 5.20 0.205<br>A1 D A2<br>D2 4.11 4.31 0.162 0.170<br>e 1.27 0.050<br>E E 6.15 0.242<br>E2 3.50 3.70 0.138 0.146<br>L 0.50 0.80 0.020 0.031<br>K 1.275 1.575 0.050 0.062<br>**----- End of picture text -----**<br>


## **Figure 12. Footprint (dimensions in mm)** 

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5.35<br>4.41<br>0.98<br>0.95<br>0.62<br>1.27<br>3.86 4.33 6.29<br>**----- End of picture text -----**<br>


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**Package information** 

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Figure 13. Tape and reel specifications<br>Dot identifying Pin A1 location Ø 1.55<br>2.0 4.0<br>0.30<br>0.20<br>Ø 1.5<br>R 0.50<br>6.30<br>8.0<br>1.20<br>All dimensions are typical values in mm User direction of unreeling<br>1.75<br>5.5<br>12.0<br>5.30<br>**----- End of picture text -----**<br>


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**Ordering information** 

## **3** 

## **Ordering information** 

|**Table 6.**<br>**Ordering information**|**Table 6.**<br>**Ordering information**|**Table 6.**<br>**Ordering information**|**Table 6.**<br>**Ordering information**|**Table 6.**<br>**Ordering information**|**Table 6.**<br>**Ordering information**|
|---|---|---|---|---|---|
|**Order code**|**Marking**|**Package**|**Weight**|**Base qty**|**Delivery mode**|
|STPS30M60DJF-TR|PS30 M60|PowerFLAT 5x6|95 mg|3000|Tape and reel|



## **4 Revision history** 

**Table 7. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|18-Apr-2012|1|First issue.|



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