STPS30M120SR

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## **STPS30M120S** 

## Power Schottky rectifier 

**Datasheet** − **production data** 

## **Features** 

- High current capability 

- Avalanche rated 

- Low forward voltage drop 

- High frequency operation 

## **Description** 

This Schottky diode is suited for high frequency switch mode power supply. 

Packaged in TO-220AB narrow leads and I[2] PAK, this device is intended to be used in notebook, game station and desktop adapters, providing in these applications a good efficiency at both low and high load. 

## **Figure 1. Electrical characteristics[(a)]** 

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I<br>V<br>"Forward"<br>I<br>2 x IO X<br>IF<br>IO X<br>VRRM<br>VAR VR<br>V<br>IR<br>VTo VF(Io) VF VF(2xIo)<br>"Reverse"<br>IAR<br>**----- End of picture text -----**<br>


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A<br>K<br>A<br>K<br>K<br>A A<br>A K A<br>K<br>TO-220AB narrow leads I [2] PAK<br>STPS30M120STN STPS30M120SR<br>**----- End of picture text -----**<br>


## **Table 1. Device summary** 

|**Symbol**|**Value**|
|---|---|
|IF(AV)|30 A|
|VRRM|120 V|
|VF(typ)|0.45 V|
|Tj (max)|150 °C|



- a. VARM and IARM must respect the reverse safe operating area defined in _Figure 9_ . VAR and IAR are pulse measurements (tp < 10 µs). VR, IR, VRRM and VF, are static characteristics 

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This is information on a product in full production. 

_www.st.com_ 

**Characteristics** 

**STPS30M120S** 

## **1 Characteristics** 

**Table 2. Absolute ratings (limiting values with terminals 1 and 3 short circuited at Tamb = 25 °C, unless otherwise specified)** 

||**Tamb = 25 °C, unless otherwise specified)**|**Tamb = 25 °C, unless otherwise specified)**|**Tamb = 25 °C, unless otherwise specified)**|||
|---|---|---|---|---|---|
|**Symbol**|**Parameter**|||**Value**|**Unit**|
|VRRM|Repetitive peak reverse voltage|||120|V|
|IF(RMS)|Forward rms current|||50|A|
|IF(AV)|Average forward current,δ= 0.5||Tc= 110 °C|30|A|
|IFSM|Surge non repetitive forward current||tp= 10 ms sine-wave|260|A|
|PARM<br>(1)|Repetitive peak avalanche power||Tj= 125 °C, tp= 10 µs|1450|W|
|VARM<br>(2)|Maximum repetitive peak<br>avalanche voltage|tp< 10 µs, Tj< 125 °C, IAR< 9.7 A||150|V|
|VASM<br>(2)|Maximum single-pulse<br>peak avalanche voltage|tp< 10 µs, Tj< 125 °C, IAR< 9.7 A||150|V|
|Tstg|Storage temperature range|||-65 to +175|°C|
|Tj|Maximum operating junction temperature(3)|||150|°C|



1. For pulse time duration deratings, please refer to _Figure 4_ . More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the STMicroelectronics Application notes AN1768, “Admissible avalanche power of schottky diodes” and AN2025, “Converter improvement using Schottky rectifier avalanche specification”. 

2. See _Figure 9_ 

dPtot 1 3. < condition to avoid thermal runaway for a diode on its own heatsink dTj Rth(j-a) 

## **Table 3. Thermal resistance** 

|**Table 3.**|**Thermal resistance**|**Thermal resistance**|**Thermal resistance**|**Thermal resistance**|**Thermal resistance**||||
|---|---|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|||||**Value**||**Unit**|
|Rth(j-c)|Junction to case|||||1.3||°C/W|
|**Table 4.**<br>**Static electrical characteristics(terminals 1 and 3 short circuited)**|||||||||
|**Symbol**|**Parameter**|**Test conditions**||**Min.**|**Typ.**||**Max.**|**Unit**|
|IR<br>(1)|Reverse leakage<br>current|Tj= 25 °C|VR= VRM|-|70||345|µA|
|||Tj= 125 °C||-|25||65|mA|
|VF<br>(2)|Forward voltage drop|Tj= 125 °C|IF= 5 A|-|0.45||0.50|V|
|||Tj= 125 °C|IF= 10 A|-|0.52||0.57||
|||Tj= 25 °C|IF= 15 A|-|||0.75||
|||Tj= 125 °C||-|0.57||0.62||
|||Tj= 25 °C|IF= 30 A|-|||0.90||
|||Tj= 125 °C||-|0.66||0.73||



1. Pulse test: tp = 5 ms, δ < 2% 

2. Pulse test: tp = 380 µs, δ < 2% 

To evaluate the conduction losses use the following equation: P = 0.53 x IF(AV) + 0.0067 x IF[2] (RMS) 

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**Characteristics** 

**Figure 2. Average forward power dissipation Figure 3. Average forward current versus versus average forward current ambient temperature (** δ **= 0.5)** 

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35 PF(AV)(W) 35 IF(AV)(A)<br>δ = 0.5 δ = 1 Rth(j-a) = Rth(j-c)<br>30 eeeeeeeeee δ = 0.2 ee ee | ft . 30 (|a ee | | hl fF |tlt<br>25 e e δ = 0.1 25 es ee Oe<br>e e δ = 0.05 A Ge ee es e e e ee es<br>20 e e eA ee eee 20 a se ee eses ee<br>15 i 15<br>10 Pewee Zan eee 10 A ee ee ee es ee<br>BmewweeAe T P| | ft as Ge ee ee ee es ee<br>5 5<br>Bw Za2ee AR. a cr | | fl lt<br>δ = tp / T tp IF(AV)(A) Tamb(°C)<br>0 | | | ft | | ft 0 a ee|<br>0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150<br>Figure 4. Normalized avalanche power  Figure 5. Relative variation of thermal<br>derating versus pulse duration impedance junction to case versus<br>pulse durationulse duration<br>PARM(tp)<br>1 PARM(10 µs) SS =FEFF == === 1.0 AO Zth(j-c) Oc /Rth(j-c)<br>0.9 aaaa eeOc<br>0.8 aaa4<br>0.1 MBeEal 0.70.6 aaaa eeAaen 7Yc2<br>0.5 jt TT<br>a a<br>0.4 (ot TTT PA<br>LT TTTOF<br>0.01 0.3 Single pulse<br>pe A<br>0.2 eeeec eee<br>t p(µs) 0.10.0 yr—CT| HHTTTTTT oTTTrT)TTTHHH TTT tp(s) I]<br>0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00<br>1 10 100 1000<br>**----- End of picture text -----**<br>


**Figure 5. Relative variation of thermal impedance junction to case versus pulse durationulse duration** 

**Figure 4. Normalized avalanche power derating versus pulse duration** 

**Figure 6. Reverse leakage current versus reverse voltage applied (typical values)** 

**Figure 7. Junction capacitance versus reverse voltage applied (typical values)** 

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1.E+03 IR(mA) 10000 C(pF)<br>F=1MHz<br>Vosc =30mVRMS<br>1.E+02 Tj=25°C<br>Tj=150°C<br>e e e a<br>1.E+01 Tj=125°C<br>OSS er |<br>Tj=100°C<br>1.E+00 pee eee | 1000 ONITITIM TT Tl<br>Tj=75°C<br>SS == SSS. SSS ee<br>1.E-01 pe s e Tj=50°C e ESSE<br>1.E-02 =RRR Tj=25°C aDE|SEt<br>1.E-03 See eee sSsaasaeaeselanal VR(V) 100 ee VR(V)<br>0 10 20 30 40 50 60 70 80 90 100 110 120 1 10 100 1000<br>**----- End of picture text -----**<br>


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**Characteristics** 

**STPS30M120S** 

**Figure 9. Reverse safe operating area (tp < 10 µs and Tj < 125 °C)** 

## **Figure 8. Forward voltage drop versus forward current** 

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1000.0 IFM(A)<br>12.5 Iarm (A)<br>100.0 (Maximum values)Tj=125°C 12.011.5<br>11.0<br>(Typical values)Tj=125°C 10.5<br>10.0 Tj=25°C 10.0<br>(Maximum values)<br>9.5<br>9.0<br>1.0 8.58.0 Varm (V)<br>VFM(V) 120 130 140 150 160 170<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>**----- End of picture text -----**<br>


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**Package information** 

## **2 Package information** 

- Epoxy meets UL94, V0 

- Cooling method: by conduction (C) 

- Recommended torque value: 0.4 to 0.6 N·m 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK[®] is an ST trademark. 

## **Table 5. TO-220AB narrow leads dimensions** 

|L20<br>b1(x3)<br>e<br><br>1<br>2||||||F<br>D1<br>1<br>A<br><br>C|F<br>D1<br>1<br>A<br><br>C|**Ref.**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||||||**Millimeters**|||**Inches**|||
||||||||||**Min.**|**Typ.**|**Max.**|**Min.**|**Typ.**|**Max.**|
|||||||||A|4.40||4.60|0.17||0.18|
|||||||||b|0.61||0.88|0.024||0.034|
|||||||||b1|0.95||1.20|0.037||0.047|
|||E||||F|A||||||||
|||||||||c|0.48||0.70|0.019||0.027|
||||||||||||||||
|||||||||D|15.25||15.75|0.60||0.62|
||||Q||D<br>H|1|||||||||
||||L1||||||||||||
|||||||||D1|1.27|||0.05|||
|||||||D1|||||||||
|||||||||E|10.00||10.40|0.39||0.41|
|||||||||e|2.40||2.70|0.094||0.106|
||||||J1||||||||||
|||||||||e1|4.95||5.15|0.19||0.20|
|||||||||F|1.23||1.32|0.048||0.052|
|||||||||H1|6.20||6.60|0.24||0.26|
|||||||||J1|2.40||2.72|0.095||0.107|
|||||||||L|13.00||14.00|0.51||0.55|
||||||||||||||||
|||||||||L1|2.60||2.90|0.102||0.114|
|||||||||L20|15.40|||0.61|||
|||||||||L30|28.90|||1.14|||
|||||||||∅P|3.75||3.85|0.147||0.151|
|||||||||Q|2.65||2.95|0.104||0.116|



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**Package information** 

Devices in I[2] PAK with nickel-plated back frame must NOT be mounted by frame soldering like SMDs. Such devices are intended to be through-hole mounted ONLY and in no circumstances shall ST be held liable for any lack of performance or damage arising out of soldering of nickel-plated back frames. 

**Table 6. I[2] PAK dimensions** 

|**L2**<br>**L**|**L2**<br>**L**|||||**A1**<br>**c**<br>**c2**<br>**A**|**Ref.**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|
|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||||**Millimeters**||**Inches**||
|||||||||**Min.**|**Max.**|**Min.**|**Max.**|
|||||**E**||||||||
||||||||A|4.40|4.60|0.173|0.181|
||||||||A1|2.40|2.72|0.094|0.107|
||||||||b|0.61|0.88|0.024|0.035|
||||||||b1|1.14|1.70|0.044|0.067|
||||||||c|0.49|0.70|0.019|0.028|
|||||||||||||
|||**L1**||**e**|||c2|1.23|1.32|0.048|0.052|
||||||||D|8.95|9.35|0.352|0.368|
||||||||e|2.40|2.70|0.094|0.106|
||||||||e1|4.95|5.15|0.195|0.203|
||||||||E|10|10.40|0.394|0.409|
||||||||L|13|14|0.512|0.551|
|||||||||||||
||||||||L1|3.50|3.93|0.138|0.155|
||||||||L2|1.27|1.40|0.050|0.055|



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**Ordering information** 

## **3 Ordering information** 

**Table 7. Ordering information** 

|**Order code**|**Marking**|**Package**|**Weight**|**Base qty **|**Delivery mode**|
|---|---|---|---|---|---|
|STPS30M120SR|PS30M120SR|I2PAK|1.49 g|50|Tube|
|STPS30M120STN|PS30M120STN|TO-220AB<br>narrow leads|1.9 g|50|Tube|



## **4 Revision history** 

|**Table 8.**<br>**Document revision history**|**Table 8.**<br>**Document revision history**|**Table 8.**<br>**Document revision history**|
|---|---|---|
|**Date**|**Revision**|**Changes**|
|02-Apr-2012|1|First issue.|



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