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STB8NM60T4

Power MOSFET, N Channel, 650 V, 8 A, 0.9 ohm, TO-263 (D2PAK), Surface Mount

  • Manufacturer: STMICROELECTRONICS
  • Product type: Single MOSFETs
  • Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.9ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dis
  • MSL: -
  • SVHC: No SVHC (25-Jun-2025)
  • No. of Pins: 3Pins
  • Channel Type: N Channel
  • Product Range: -
  • Qualification: -
  • Power Dissipation: 100W
  • Transistor Mounting: Surface Mount
  • Rds(on) Test Voltage: 10V
  • Transistor Case Style: TO-263 (D2PAK)
  • Drain Source Voltage Vds: 650V
  • Operating Temperature Max: 150°C
  • Continuous Drain Current Id: 8A
  • Drain Source On State Resistance: 0.9ohm
  • Gate Source Threshold Voltage Max: 4V
Delivery and price
Units per pack 5000
Price 1.2 €
Current stock 10+
Lead time 7 days

Updated at March 19, 2026