STB13N60M2

Power MOSFET, N Channel, 600 V, 11 A, 0.35 ohm, TO-263 (D2PAK), Surface Mount

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Manufacturer: STMICROELECTRONICS
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.35ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V;
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: MDmesh M2
Qualification: -
Power Dissipation: 110W
Transistor Mounting: Surface Mount
Transistor Polarity: N Channel
Power Dissipation Pd: 110W
Rds(on) Test Voltage: 10V
On Resistance Rds(on): 0.35ohm
Transistor Case Style: TO-263 (D2PAK)
Drain Source Voltage Vds: 600V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 11A
Drain Source On State Resistance: 0.35ohm
Automotive Qualification Standard: -
Gate Source Threshold Voltage Max: 3V

Delivery and price
Units per pack	500
Price	0.884 €
Current stock	50+
Lead time	7 days

Datasheet

Updated at March 19, 2026