SSBRD81045T4G

## MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G 

## Switch-mode Schottky Power Rectifier **Surface Mount Power Package** 

This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes. 

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## **SCHOTTKY BARRIER RECTIFIER 10 AMPERES, 45 VOLTS** 

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## **Features** 

- Guardring for Stress Protection 

- Low Forward Voltage 

- 175°C Operating Junction Temperature 

- Epoxy Meets UL 94 V−0 @ 0.125 in 

- Short Heat Sink Tab Manufactured − Not Sheared! 

- SBRB and SBRD8 Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **Mechanical Characteristics:** 

- Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 

- Weight: 1.7 grams for D[2] PAK (approximately) 

      - 0.4 grams for DPAK (approximately) 

- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 

- Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 

- Device Meets MSL1 Requirements 

- ESD Ratings: 

   - ♦ Machine Model = C (> 400 V) 

   - ♦ Human Body Model = 3B (> 8000 V) 

**MARKING DIAGRAM** 4 AY   WW MBRB1045G 1 AKA 3 **D[2] PAK CASE 418B** a ~~s~~ A = Assembly Location Y = Year WW = Work Week MBRB1045 = Device Code G = Pb−Free Package AKA = Diode Polarity 

**MARKING DIAGRAM** 4 YWW 1[2] B10 3 45G **DPAK** 7 ~~-7~~ **CASE 369C** Y = Year WW = Work Week B1045 = Device Code G = Pb−Free Package 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2016 **November, 2016 − Rev. 9** 

**MBRB1045/D** 

**MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|45|V|
|Average Rectified Forward Current (Rated VR) TC= 135°C|IF(AV)|10|A|
|Peak Repetitive Forward Current<br>(Rated VR, Square Wave, 20 kHz) TC= 135°C|IFRM|20|A|
|Nonrepetitive Peak Surge Current<br>(Surge applied at rated load conditions halfwave, single phase, 60 Hz)|IFSM|150<br>(MBRB/SBRB)<br>70<br>(MBRD/SBRD)|A|
|Operating Junction and Storage Temperature Range (Note 1)|TJ, Tstg|−65 to +175|°C|
|Voltage Rate of Change(Rated VR)|dv/dt|10000|V/�s|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R � JA. 

## **THERMAL CHARACTERISTICS** 

|**Characteristic**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|
|Thermal Resistance,<br>(MBRB1045G)<br>Junction−to−Case (Note 2)<br>Junction−to−Ambient (Note 2)<br>(MBRD1045G)<br>Junction−to−Case (Note 2)<br>Junction−to−Ambient (Note 2)|R�JC<br>R�JA<br>R�JC<br>R�JA|1.0<br>50<br>2.43<br>68|°C/W|



2. When mounted using minimum recommended pad size on FR−4 board. 

## **ELECTRICAL CHARACTERISTICS** 

|**ELECTRICAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Maximum Instantaneous Forward Voltage (Note 3)<br>(IF= 10 Amps, TJ= 125°C)<br>(IF= 20 Amps, TJ= 125°C)<br>(IF= 20 Amps, TJ= 25°C)|VF|0.57<br>0.72<br>0.84|V|
|Maximum Instantaneous Reverse Current (Note 3)<br>(Rated dc Voltage, TJ= 125°C)<br>(Rated dc Voltage, TJ= 25°C)|IR|15<br>0.1|mA|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0% 

## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|MBRB1045G|D2PAK<br>(Pb−Free)|50 Units / Rail|
|SBRB1045G||50 Units / Rail|
|MBRB1045T4G||800 Units / Tape & Reel|
|SBRB1045T4G||800 Units / Tape & Reel|
|MBRD1045G|DPAK<br>(Pb−Free)|50 Units / Rail|
|MBRD1045T4G||2,500 Units / Tape & Reel|
|SBRD81045T4G||2,500 Units / Tape & Reel|
|SSBRD81045T4G||2,500 Units / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

**www.onsemi.com** 

**2** 

## **MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G** 

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100 100<br>70 TJ = 150°C 100°C 70 TJ = 150°C 25°C<br>50 25°C 50 100°C<br>30 30<br>20 20<br>10 10<br>7.0 7.0<br>5.0 5.0<br>3.0 3.0<br>2.0 2.0<br>1.0 1.0<br>0.7 0.7<br>0.5 0.5<br>0.3 0.3<br>0.2 0.2<br>0.1 0.1<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>vF, INSTANTANEOUS VOLTAGE (VOLTS) vF, INSTANTANEOUS VOLTAGE (VOLTS)<br>Figure 1. Maximum Forward Voltage Figure 2. Typical Forward Voltage<br>100 100<br>TJ = 150°C 150°C<br>10 125°C 10<br>100°C 125°C<br>1.0 75°C 1.0 100°C<br>75°C<br>0.1 0.1<br>25°C<br>0.01 0.01<br>25°C<br>0.001 0.001<br>0 5.0 10 15 20 25 30 35 40 45 50 0 5.0 10 15 20 25 30 35 40 45 50<br>VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>iF, INSTANTANEOUS FORWARD CURRENT (AMPS) iF, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>, REVERSE CURRENT (mA) IR, REVERSE CURRENT (mA)<br>IR<br>**----- End of picture text -----**<br>


**Figure 3. Maximum Reverse Current** 

**Figure 4. Typical Reverse Current** 

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**3** 

**MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G** 

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200<br>100<br>70<br>50<br>30<br>20<br>1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100<br>NUMBER OF CYCLES AT 60 Hz<br>Figure 8. Maximum Surge Capability<br>18<br>16 RATED VOLTAGE APPLIED<br>14<br>dc<br>12<br>10 SQUARE<br>WAVE<br>8.0<br>6.0<br>4.0<br>2.0<br>0<br>130 135 140 145 150 155<br>TC, CASE TEMPERATURE ( ° C)<br>IFSM, PEAK HALF-WAVE CURRENT (AMPS)<br>, AVERAGE FORWARD CURRENT (AMPS)<br>IF(AV)<br>**----- End of picture text -----**<br>


**Figure 6. Current Derating, Case, R � JC = 1.0** ° **C/W** 

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1400<br>1200<br>1000<br>800<br>600<br>400<br>200<br>0<br>0 10 20 30 40 50<br>VR, REVERSE VOLTAGE (VOLTS)<br>Figure 5. Typical Capacitance<br>10<br>9.0<br>dc<br>8.0<br>7.0<br>SQUARE<br>6.0 WAVE<br>5.0<br>4.0<br>3.0<br>2.0<br>1.0<br>0<br>0 2.0 4.0 6.0 8.0 10 12 14 16 18<br>IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>C, CAPACITANCE (pF)<br>, AVERAGE FORWARD POWER DISSIPATION (WATTS)<br>PF(AV)<br>**----- End of picture text -----**<br>


**Figure 7. Forward Power Dissipation** 

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**4** 

**MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G** 

## **PACKAGE DIMENSIONS** 

**D[2] PAK 3** CASE 418B−04 ISSUE L 

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C<br>E<br>V<br>−B−<br>W<br>4<br>A<br>S<br>1 2 3<br>−T−<br>K<br>SEATING W<br>PLANE G J<br>H<br>D 3 PL<br>0.13 (0.005) M T B M<br>**----- End of picture text -----**<br>


|NO<br>1. <br>2. <br>3.|TES:<br> DIMENSIONING AND TOLERANCING<br>PER ANSI Y14.5M, 1982.<br> CONTROLLING DIMENSION: INCH.<br> 418B−01 THRU 418B−03 OBSOLETE,<br>NEW STANDARD 418B−04.|TES:<br> DIMENSIONING AND TOLERANCING<br>PER ANSI Y14.5M, 1982.<br> CONTROLLING DIMENSION: INCH.<br> 418B−01 THRU 418B−03 OBSOLETE,<br>NEW STANDARD 418B−04.|TES:<br> DIMENSIONING AND TOLERANCING<br>PER ANSI Y14.5M, 1982.<br> CONTROLLING DIMENSION: INCH.<br> 418B−01 THRU 418B−03 OBSOLETE,<br>NEW STANDARD 418B−04.|TES:<br> DIMENSIONING AND TOLERANCING<br>PER ANSI Y14.5M, 1982.<br> CONTROLLING DIMENSION: INCH.<br> 418B−01 THRU 418B−03 OBSOLETE,<br>NEW STANDARD 418B−04.|TES:<br> DIMENSIONING AND TOLERANCING<br>PER ANSI Y14.5M, 1982.<br> CONTROLLING DIMENSION: INCH.<br> 418B−01 THRU 418B−03 OBSOLETE,<br>NEW STANDARD 418B−04.|
|---|---|---|---|---|---|
||**DIM**|**INCHES**||**MILLIMETERS**||
|||**MIN**|**MAX**|**MIN**|**MAX**|
||**A**|0.340|0.380|8.64|9.65|
||**B**|0.380|0.405|9.65|10.29|
||**C**|0.160|0.190|4.06|4.83|
||**D**|0.020|0.035|0.51|0.89|
||**E**|0.045|0.055|1.14|1.40|
||**F**|0.310|0.350|7.87|8.89|
||**G**<br>|0.100 BSC<br><br>||2.54 BSC<br><br>||
||**H**|0.080|0.110|2.03|2.79|
||**J**|0.018|0.025|0.46|0.64|
||**K**|0.090|0.110|2.29|2.79|
||**L**|0.052|0.072|1.32|1.83|
||**M**|0.280|0.320|7.11|8.13|
||**N**|0.197 REF||5.00 REF||
||**P**|0.079 REF||2.00 REF||
||**R**|0.039 REF||0.99 REF||
||**S**|0.575|0.625|14.60|15.88|
||**V**|0.045|0.055|1.14|1.40|



## **SOLDERING FOOTPRINT*** 

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10.49<br>8.38<br>16.155<br>2X<br>3.504<br>2X<br>1.016<br>5.080<br>PITCH<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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**5** 

**MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G** 

## **PACKAGE DIMENSIONS** 

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DPAK (SINGLE GAUGE)<br>CASE 369C<br>ISSUE F<br>**----- End of picture text -----**<br>


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NOTES:<br>A 1. DIMENSIONING AND TOLERANCING PER ASME<br>Y14.5M, 1994.<br>E C 2. CONTROLLING DIMENSION: INCHES.<br>A 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-<br>b3 B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLDMENSIONS b3, L3 and Z.<br>FLASH, PROTRUSIONS, OR BURRS. MOLD<br>FLASH, PROTRUSIONS, OR GATE BURRS SHALL<br>4 NOT EXCEED 0.006 INCHES PER SIDE.<br>L3 ae Z 5. DIMENSIONS D AND E ARE DETERMINED AT THE<br>D DETAIL A H 6. DATUMS A AND B ARE DETERMINED AT DATUMOUTERMOST EXTREMES OF THE PLASTIC BODY.<br>1 2 3 PLANE H.<br>7. OPTIONAL MOLD FEATURE.<br>L4 NOTE 7 DIM MININCHESMAX MILLIMETERSMIN MAX<br>b2 c BOTTOM VIEW A 0.086 0.094 2.18 2.38<br>e SIDE VIEW A1 0.000 0.005 0.00 0.13<br>b b 0.025 0.035 0.63 0.89<br>TOP VIEW 0.005 (0.13) M C b2b3 0.0280.180 0.0450.215 0.724.57 1.145.46<br>c 0.018 0.024 0.46 0.61<br>c2 0.018 0.024 0.46 0.61<br>H Z Z D 0.235 0.245 5.97 6.22<br>E 0.250 0.265 6.35 6.73<br>e 0.090 BSC 2.29 BSC<br>L2 [GAUGE] PLANE C SEATINGPLANE H 0.370 0.410 9.40 10.41<br>L 0.055 0.070 1.40 1.78<br>L1 0.114 REF 2.90 REF<br>L2 0.020 BSC 0.51 BSC<br>L L3 0.035 0.050 0.89 1.27<br>A1 BOTTOM VIEW L4 −−− 0.040 −−− 1.01<br>pet L1 s Sa CONSTRUCTIONS t ALTERNATE Z 0.155 −−− 3.93 −−−<br>DETAIL A<br>ROTATED 9  CW<br>SOLDERING FOOTPRINT*<br>6.20 3.00<br>0.244 0.118<br>2.58<br>0.102<br>5.80<br>1.60 6.17<br>0.228<br>0.063 0.243<br>Ts.<br>SCALE 3:1 mm<br>inches<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br>


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