SS39
Schottky Rectifier, 90 V, 3 A, Single, DO-214AB (SMC), 2 Pins, 850 mV
- Manufacturer: ONSEMI
- Product type: Schottky Rectifier Diodes
- SVHC: Lead (25-Jun-2025)
- No. of Pins: 2Pins
- Product Range: -
- Qualification: -
- Diode Mounting: Surface Mount
- Diode Case Style: DO-214AB (SMC)
- Diode Configuration: Single
- Forward Voltage Max: 850mV
- Forward Surge Current: 100A
- Average Forward Current: 3A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 90V
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.223 € |
| Current stock | 10+ |
| Lead time | 30 days |
**DATA SHEET www.onsemi.com** ## Schottky Rectifier ## SS32 - S310 ## **Description** The SS32−S310 series includes a high−efficiency, low power loss, general−propose Schottky rectifiers. The clipbonded leg structure provides high thermal performance and low electrical resistance. These rectifiers are suited for free wheeling, secondary rectification, and reverse polarity protection applications. **==> picture [192 x 106] intentionally omitted <==** **----- Start of picture text -----**<br> 1 2<br>Cathode Anode<br>SMC<br>CASE 403AG<br>**----- End of picture text -----**<br> ## **Features** - Metal to Silicon Rectifiers, Majority Carrier Conduction - Low−Forward Voltage Drop ## **MARKING DIAGRAM** - Easy Pick and Place - High−Surge Current Capability - This Device is Pb−Free and Halide Free $Y&Z&3 Sxyz � $Y = Logo &Z = Assembly Plant Code &3 = Date Code Sxyz = Specific Device Code x = S or 3 y = 1 or 3 z = 0 or 2−9 ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**†| |---|---|---| |SS32<br>SS33<br>SS34<br>SS35<br>SS36<br>SS38<br>SS39<br>S310|SMC<br>(Pb−Free,<br>Halide−Free)|3000 /<br>Tape & Reel| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: **SS39/D** **1** © Semiconductor Components Industries, LLC, 1999 **August, 2021 − Rev. 5** **SS32 − S310** **ABSOLUTE MAXIMUM RATINGS** Values are at TA = 25 ° C unless otherwise noted. |**ABSOLU**|**TE MAXIMUM RATINGS**Values are at TA= 25°C|unless otherwise noted.|unless otherwise noted.|unless otherwise noted.|unless otherwise noted.|unless otherwise noted.|unless otherwise noted.|unless otherwise noted.|unless otherwise noted.|| |---|---|---|---|---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Value**||||||||**Units**| |||**SS32**|**SS33**|**SS34**|**SS35**|**SS36**|**SS38**|**SS39**|**S310**|| |VRRM|Maximum Repetitive Reverse Voltage|20|30|40|50|60|80|90|100|V| |IF(AV)|Maximum Average Forward Current<br>at TA= 75°C|3.0||||||||A| |IFSM|Non−Repetitive Peak Forward Surge Current:<br>8.3 ms Single Half−Sine Wave|100||||||||A| |dV/dt|Maximum Voltage Rate of Change|10000||||||||V/�S| |TSTG|Storage Temperature Range|−55 to +150||||||||°C| |TJ|Operating Junction Temperature|−55 to +150||||||||°C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **THERMAL CHARACTERISTICS** |**Symbol**|**Parameter**|**Value**|**Unit**| |---|---|---|---| |PD|Power Dissipation|2.27|W| |RθJA|Thermal Resistance, Junction to Ambient (Note 1)|55|°C/W| |RθJL|Thermal Resistance, Junction to Lead|17|°C/W| 1. Device mounted on FE−4 PCB 0.55 x 0.55 inch (14 x 14 mm). ## **ELECTRICAL CHARACTERISTICS** Values are at TA = 25 ° C unless otherwise noted. |**Symbol**|**Parameter**|**Test Conditions**||||**Value**|**Value**|**Value**|**Value**|**Value**|**Units**| |---|---|---|---|---|---|---|---|---|---|---|---| ||||**SS32**|**SS33**|**SS34**|**SS35**|**SS36**|**SS38**|**SS39**|**S310**|| |VF|Forwarded Voltage|IF= 3.0 A|500|||750||850|||mV| |IR|Reverse Current at Rated VR|TA= 25°C||||0.5|||||mA| |||TA= 100°C|20|||10|||||| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ## **TYPICAL CHARACTERISTICS** **==> picture [484 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 3 100<br>80<br>2<br>60<br>40<br>1 Resistive or Inductive<br>Load P.C.B. Mounted<br>on 0.55 x 0.55’’<br>20<br>(14 x 14) mm<br>Copper Pad Areas<br>0 0<br>0 25 50 75 100 125 150 175 1 2 5 10 20 50 100<br>Ambient Temperature ( � C) Number of Cycles at 60 Hz<br>Current (A) Current (A)<br>, Peak Forward Surge<br>, Average Rectified Forward IFSM<br>IF<br>**----- End of picture text -----**<br> **Figure 1. Forward Current Derating Curve** **Figure 2. Non−Repetitive Surge Current** **www.onsemi.com** **2** **SS32 − S310** ## **TYPICAL CHARACTERISTICS** **==> picture [483 x 381] intentionally omitted <==** **----- Start of picture text -----**<br> 50 20<br>TA = 125 ° C 10<br>TA = 25 ° C SS32−SS34<br>10 SS32−SS34<br>TA = 125 ° C<br>1 SS35−S310<br>SS35−S310<br>1<br>0.1<br>TA = 75 ° C<br>TA = 150 ° C SS32−SS34<br>0.1<br>0.01<br>Pulse Width = 300 2% Duty Cycle � s SS35−S310 TA = 25 ° C<br>0.01 0.001<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 20 40 60 80 100 120 140<br>VF, Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%)<br>Figure 3. Forward Voltage Characteristics Figure 4. Reverse Current vs. Reverse Voltage<br>1000 100<br>SS32−SS34<br>10<br>SS35−S310<br>100<br>1<br>10 0.1<br>0.1 1 10 100 0.01 0.1 1 10 100<br>VR, Reverse Voltage (V) Pulse Duration (s)<br>, Forward Current (A)IF , Reverse Current (mA)IR<br>C/W)<br>, Total Capacitance (pF) �<br>T<br>C<br>Transient Thermal Impedance (<br>**----- End of picture text -----**<br> **Figure 5. Total Capacitance** **Figure 6. Thermal Impedance Characteristics** **www.onsemi.com** **3** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **SMC** CASE 403AG ISSUE O DATE 31 AUG 2016 **==> picture [483 x 352] intentionally omitted <==** **----- Start of picture text -----**<br> 8.15<br>B<br>7.75<br>1.96<br>6.25 3.27<br>5.55 2.75 B 3.39<br> 6.81<br>A 7.15 0.13 M C B A LAND PATTERN RECOMMENDATION<br>6.60<br>TOP VIEW °<br>8<br>R0.15 0 °<br>2.45<br>A 2.65 MAX 4X<br>1.90<br>GAGE<br>C PLANE 0.41<br>0.15<br>SEATING<br>PLANE<br>0.203<br>0.30<br>0.05 4.70 0.050 B 8 °<br>4.40 0.13 M C B A 0.45 1.60 0 °<br>0.75<br>SIDE VIEW<br>DETAIL A<br>NOTES: SCALE 2:1<br>**----- End of picture text -----**<br> - A. EXCEPT WHERE NOTED, CONFORMS TO JEDEC DO−214, VARIATION AB - B DOES NOT COMPLY TO JEDEC STD. VALUE - C. ALL DIMENSIONS ARE IN MILLIMETERS - D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR PROTRUSIONS. - E. DIMENSIONS AND TOLERANCING AS PER ASME Y14.5−2009 - F. LAND PATTERN STANDARD: DIOM7957X241M Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DOCUMENT NUMBER: 98AON13442G** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: SMC PAGE 1 OF 1** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2016 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **ADDITIONAL INFORMATION** **TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales **==> picture [232 x 43] intentionally omitted <==**
Updated at June 4, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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