SS16MH

**SS13M - SS16M** 

& SEMICONDUCTOR —_—_——————— 

Taiwan Semiconductor 

## **1A, 30V - 60V Surface Mount Schottky Barrier Rectifier** 

## FEATURES 

- AEC-Q101 qualified 

- Very low profile - typical height of 0.68mm 

- Low power loss, high efficiency 

- Ideal for automated placement 

- Moisture sensitivity level: level 1, per J-STD-020 

- Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC 

- Halogen-free according to IEC 61249-2-21 

## KEY PARAMETERS 

|KEY PARAMETERS|KEY PARAMETERS|KEY PARAMETERS|
|---|---|---|
|PARAMETER|VALUE|UNIT|
|IF(AV)|1|A|
|VRRM|30 - 60|V|
|IFSM|25|A|
|TJ MAX|150|°C|
|Package|Micro SMA||



## APPLICATIONS 

- Converter 

- Free wheeling 

- LED lighting 

- Adapters 

**==> picture [62 x 56] intentionally omitted <==**

**----- Start of picture text -----**<br>
¢<br>**----- End of picture text -----**<br>


## MECHANICAL DATA 

- Case: Micro SMA 

- Molding compound meets  UL 94V-0 flammability rating 

- Terminal: Matte tin plated leads, solderable per J-STD-002 

- Meet JESD 201 class 2 whisker test 

- Polarity: As marked 

## **Micro SMA** 

- Weight: 0.006 g (approximately) 

|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|
|---|---|---|---|---|---|
|PARAMETER|SYMBOL|SS13M|SS14M|SS16M|UNIT|
|Markingcode on the device||A|B|C||
|Repetitivepeak reverse voltage|VRRM|30|40|60|V|
|Forward current|IF(AV)|1|||A|
|Surge peak forward current, 8.3 ms<br>single half sine-wave superimposed on<br>ratedload perdiode|IFSM|25|||A|
|Junction temperature|TJ|- 55 to +150|||°C|
|Storage temperature|TSTG|- 55 to +150|||°C|



1 Version: N1810 

% SEMICONDUCTOR(yg **SS13M - SS16M** Taiwan Semiconductor 

|THERMAL PERFORMANCE|THERMAL PERFORMANCE|THERMAL PERFORMANCE|THERMAL PERFORMANCE|
|---|---|---|---|
|PARAMETER|SYMBOL|TYP.|UNIT|
|Junction-to-lead Thermal Resistance|RӨJL|30|°C/W|
|Junction-to-ambient thermal resistance|RӨJA|125|°C/W|
|Junction-to-case thermal resistance|RӨJC|40|°C/W|



|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)<br>~~a~~|
|---|---|---|---|---|---|---|
|PARAMETER<br>~~a~~||CONDITIONS<br>~~a~~|SYMBOL<br>~~a~~|TYP.<br>~~a~~|MAX.<br>~~a~~|UNIT<br>~~a~~|
|Forward voltage per diode(1)|SS13M<br>SS14M|IF= 0.5A,TJ= 25°C<br>~~a~~|VF<br>~~a~~<br>~~a~~|0.45<br>~~a~~<br>~~ee~~|-<br>~~a~~<br>~~ee~~|V<br>~~a~~<br>~~ee~~|
|||IF= 1.0A,TJ= 25°C<br>~~——F~~||0.52|0.55|V|
|||IF= 0.5A,TJ= 125°C<br>~~——F~~<br>~~—F~~<br>~~ee~~||0.35|-|V|
|||IF= 1.0A,TJ= 125°C<br>~~ee~~<br>~~——F~~||0.46|0.50<br>~~en~~|V|
||SS16M|IF= 0.5A,TJ= 25°C<br>~~ee ~~<br>~~re~~<br>~~——F~~|VF<br> ~~a~~<br>~~a~~|0.51<br>~~ee~~|-<br>~~ee~~<br>~~en~~|V<br>~~ee~~|
|||IF= 1.0A,TJ= 25°C<br>~~——F~~||0.64|0.68<br>~~en~~|V|
|||IF= 0.5A,TJ= 125°C<br>~~——F~~<br>~~—F~~<br>~~ee~~||0.46|-<br>~~en~~|V|
|||IF= 1.0A,TJ= 125°C<br>~~ee~~||0.57|0.60|V|
|Reverse current @ rated VR<br>per diode(2)|SS13M<br>SS14M|TJ= 25°C<br>~~ee ~~<br>~~a~~|IR<br> ~~a~~|5|50|µA|
|||TJ= 125°C<br>~~a~~<br>~~SO~~||3|10|mA|
|||TJ= 150°C<br>~~a~~||5.3|-|mA|
||SS16M|TJ= 25°C<br>~~a~~|IR<br>~~pe~~|5|50|µA|
|||TJ= 125°C<br>~~pe~~||3<br>~~pe~~|10<br>~~pe~~|mA|
|||TJ= 150°C||6|-|mA|
|Junction capacitance<br>~~eo~~|SS13M<br>SS14M<br>~~_~~<br>~~eo~~|1 MHz, VR=4.0V<br>~~eo~~|CJ<br>~~eo~~|50<br>~~|~~<br>~~eo~~|-<br>~~ft~~<br>~~eo~~|pF<br>~~ft~~<br>~~eo~~|
||SS16M<br>~~eo~~|||40<br>~~eo~~|-<br>~~eo~~|pF<br>~~eo~~|



- **Notes:** 1. Pulse test with PW=0.3 ms 

2. Pulse test with PW=30 ms 

|ORDERING INFORMATION|ORDERING INFORMATION|ORDERING INFORMATION|
|---|---|---|
|ORDERING CODE|PACKAGE|PACKING|
|SS13MHRSG|Micro SMA|3000 / 7" Plastic reel|
|SS14MHRSG|Micro SMA|3000 / 7" Plastic reel|
|SS16MHRSG|Micro SMA|3000 / 7" Plastic reel|
|SS13M RSG|Micro SMA|3000 / 7" Plastic reel|
|SS14M RSG|Micro SMA|3000 / 7" Plastic reel|
|SS16M RSG|Micro SMA|3000 / 7" Plastic reel|



**Note:** “H” means AEC-Q101 qualified 

2 Version: N1810 

**SS13M - SS16M** Taiwan Semiconductor 

## CHARACTERISTICS CURVES 

(TA = 25°C unless otherwise noted) 

## **Fig.1 Forward Current Derating Curve** 

**Fig.2 Typical Junction Capacitance** 

**==> picture [509 x 462] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.2 1000<br>1<br>0.8 100 SS16M<br>0.6<br>0.4 10 SS13M - SS14M<br>0.2 RESISTIVE OR<br>INDUCTIVE LOAD<br>0 SSreeH 1 ler<br>0 25 50 75 100 125 150 0.1 1 10 100<br>LEAD TEMPERATURE ( [o] C)  REVERSE VOLTAGE (V)<br>        Fig.3 Typical Reverse Characteristics          Fig.4 Typical Forward Characteristics<br>100 100<br>10 TJ=150 ° C<br>===58====—8=ssssassee 10<br>1 SSS =<br>TJ=125 ° C TJ=150 ° C<br>0.1 1<br>TJ=125 ° C Va<br>0.01<br>0.001 TJ=25 ° C 0.1 TJ=25 ° C<br>0.0001 peSs 0.01 Pf oY =<br>10 20 30 40 50 60 70 80 90 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1<br>PERCENT OF RATED PEAK REVERSE VOLTAGE (%)   FORWARD VOLTAGE (V)<br>CAPACITANCE (pF)<br>AVERAGE FORWARD CURRENT (A)<br>INSTANTANEOUS REVERSE CURRENT (mA)  INSTANTANEOUS FORWARD CURRENT (A)<br>**----- End of picture text -----**<br>


3 Version: N1810 

## Som **SS13M - SS16M** Taiwan Semiconductor CHARACTERISTICS CURVES 

(TA = 25°C unless otherwise noted) 

## **Fig.5 Typical Reverse Characteristics** 

## **Fig.6 Typical Forward Characteristics** 

**==> picture [509 x 463] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 100<br>°<br>10 SS TJ=150 C<br>10<br>1<br>Se ° G ec TJ=150 ° C e<br>TJ=125 C<br>0.1 1<br>Ss=ane=—=— ee eselW>-ce<br>0.01 TJ=125 ° C<br>0.1<br>0.001 TJ=25 ° C TJ=25 ° C<br>0.0001 SSS 0.01 LU Ff<br>10 20 30 40 50 60 70 80 90 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1<br>PERCENT OF RATED PEAK REVERSE VOLTAGE (%)   REVERSE VOLTAGE (V)<br>                Fig.7 Maximum Forward Surge Current         Fig.8 Typical Transient Thermal Impedance<br>40 1000<br>8.3ms Single Half Sine-Wave<br>30<br>SS16M<br>100<br>20<br>SS13M - SS14M<br>10<br>10<br>a<br>0 LT 1<br>1 10 100 0.1 1 10 100<br>NUMBER OF CYCLES AT 60 Hz  t-PULSE DURATION(S)<br>INSTANTANEOUS REVERSE CURRENT (mA)  INSTANTANEOUS FORWARD CURRENT (A)<br>PEAK FORWARD SURAGE CURRENT(A)  TRANSIENT THERMAL IMPEDANCE(°C/W)<br>**----- End of picture text -----**<br>


4 Version: N1810 

**SS13M - SS16M** (jap Taiwan Semiconductor 

SEMICONDUCTOR(jap 

## PACKAGE OUTLINE DIMENSIONS 

## **Micro SMA** 

## SUGGESTED PAD LAYOUT 

## MARKING DIAGRAM 

- P/N = Marking Code YW = Date Code 

5 Version: N1810 

**SS13M - SS16M** (i Taiwan Semiconductor 

SEMICONDUCTOR(i 

## **Notice** 

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. 

Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. 

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 

6 Version: N1810