SR1204

Ss SEMICONDUCTOR **SR1202 – SR1204** 

Taiwan Semiconductor 

## **12A, 20V - 40V Schottky Barrier Rectifier** 

## FEATURES 

- AEC-Q101 qualified available 

- Low forward voltage drop 

- Low power loss, high efficiency 

- Guard ring for overvoltage protection 

- High surge current capability 

- RoHS Compliant 

- Halogen-free according to IEC 61249-2-21 

## APPLICATIONS 

- Switching mode power supply (SMPS) 

- Adapters 

- DC to DC converter 

|KEY PARAMETERS|KEY PARAMETERS|KEY PARAMETERS|
|---|---|---|
|PARAMETER|VALUE|UNIT|
|IF|12|A|
|VRRM|20 - 40|V|
|IFSM|320|A|
|TJ MAX|150|°C|
|Package|DO-201AD||
|Configuration|Single die||



## Pd) ROHS HALOGEN — compuant FREE 

## MECHANICAL DATA 

- Case: DO-201AD 

- Molding compound meets UL 94V-0 flammability rating 

- Terminal: Pure tin plated leads, solderable per J-STD-002 

- Meet JESD 201 class 2 whisker test 

- Polarity: Indicated by cathode band 

- Weight: 1.10g (approximately) 

## **DO-201AD** 

Cathode —_\q— Anode 

|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~a~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~a~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~a~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~a~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~a~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~a~~|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)<br>~~a~~|
|---|---|---|---|---|---|---|
|PARAMETER<br>~~a~~||SYMBOL SR1202<br>~~a~~|SYMBOL SR1202<br>~~a~~|SR1203<br>~~a~~|SR1204 UNIT<br>~~a~~|SR1204 UNIT<br>~~a~~|
|Marking code on the device<br>~~a~~||~~a~~|SR1202<br>~~a~~|SR1203<br>~~a~~|SR1204<br>~~a~~|~~a~~|
|Repetitive peak reverse voltage<br>~~ee~~||VRRM<br>~~ee~~|20<br>~~ee~~|30<br>~~ee~~|40<br>~~ee~~|V<br>~~ee~~|
|Reverse voltage, total rms value<br>~~I~~||VR(RMS)<br>~~I~~|14<br>~~I~~|21<br>~~I~~|28<br>~~I~~|V<br>~~I~~|
|Forward current<br>~~I~~<br>~~ee~~<br>~~|~~||IF<br>~~I~~<br>~~ee~~|12<br>~~I~~<br>~~eee~~|||A<br>~~I~~<br>~~eee~~|
|Surge peak forward current, single half<br>sine wave superimposed on rated load<br>~~a~~<br>~~|~~|t = 8.3ms<br>~~a~~<br>~~ee~~<br>~~|~~|IFSM<br>~~a~~<br>~~ee~~|320<br>~~a~~<br>~~eee~~|||A<br>~~a~~<br>~~eee~~|
||t = 10ms<br>~~a~~<br>~~ee~~<br>~~|~~||280<br>~~a~~<br>~~eee~~<br>~~po~~|||A<br>~~a~~<br>~~eee~~<br>~~po~~|
|Peak repetitive forward current, f > 15Hz<br>~~ee~~<br>~~|~~||IFRM<br>~~ee ~~<br>~~ee~~|55<br> ~~eee~~|||A<br>~~eee~~|
|Junction temperature<br>in DC forward mode<br>~~ee~~||TJ<br>~~ee~~<br>~~ee~~|-55 to +150<br>≤200<br>~~ee~~|||°C<br>~~ee~~|
|Storage temperature<br>~~es~~||TSTG<br>~~ee~~<br>~~es~~|-55 to +150<br>~~es~~|||°C<br>~~es~~|



1 Version: G2105 

## **SR1202 – SR1204** TAIWANSEMICONDUCTOR(i Taiwan Semiconductor 

**==> picture [499 x 62] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||
|---|---|---|---|
|THERMAL PERFORMANCE|
|PARAMETER|SYMBOL|TYP|UNIT|
|Junction-to-lead thermal resistance|RӨJL|3|°C/W|
|Junction-to-ambient thermal resistance|RӨJA|24|°C/W|

**----- End of picture text -----**<br>


ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) 

**==> picture [499 x 79] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||||
|---|---|---|---|---|---|
|PARAMETER|CONDITIONS|SYMBOL|TYP|MAX|UNIT|
|IF = 5A, TJ = 25°C|-|0.45|V|
|Forward voltage|[(1)]|VF|
|IF = 12A, TJ = 25°C|-|0.55|V|
|Reverse current @ rated VR(2)|TJ = 25°C|IR|-|500|µA|
|TJ = 100°C|-|20|mA|

**----- End of picture text -----**<br>


## **Notes:** 

1. Pulse test with PW = 0.3ms 

2. Pulse test with PW = 30ms 

## ORDERING INFORMATION 

**==> picture [444 x 79] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||
|---|---|---|---|
|ORDERING CODE|[(1)(2)]|PACKAGE|PACKING|
|SR12x|DO-201AD|1,250 / Tape & Reel|
|SR12x A0G|DO-201AD|500 / Ammo box|
|SR12xH|DO-201AD|1,250 / Tape & Reel|
|SR12xHA0G|DO-201AD|500 / Ammo box|

**----- End of picture text -----**<br>


## **Notes:** 

1. "x" defines voltage from 20V (SR1202) to 40V (SR1204) 

2. “H” means AEC-Q101 qualified 

2 Version: G2105 

56__._._______ **SR1202 – SR1204** Taiwan Semiconductor 

## CHARACTERISTICS CURVES 

(TA = 25°C unless otherwise noted) 

## **Fig.1 Forward Current Derating Curve** 

## **Fig.2 Typical Junction Capacitance** 

**==> picture [224 x 178] intentionally omitted <==**

**----- Start of picture text -----**<br>
10000<br>1000<br>SSSeeee<br>Pe<br>100<br>f=1.0MHz<br>Vsig=50mVp-p<br>10 A<br>0.1 1 10 100<br>REVERSE VOLTAGE (V)<br>CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**==> picture [478 x 637] intentionally omitted <==**

**----- Start of picture text -----**<br>
14 10000<br>12<br>10 DC forward<br>1000<br>8 N SSSeeee<br>NY Pe<br>6<br>100<br>4<br>2 f=1.0MHz<br>Vsig=50mVp-p<br>0 SaaNeN 10 A<br>25 50 75 100 125 150 175 200 0.1 1 10<br>AMBIENT TEMPERATURE (°C)  REVERSE VOLTAGE (V)<br>          Fig.3 Typical Reverse Characteristics       Fig.4 Typical Forward Characteristics<br>10 100<br>TJ=100 ° C<br>1 10<br>Zt Sea<br>0.1 1<br>ooo aap 4eeen<br>TJ=25 ° C Pulse width 300μs  1% duty cycle 1% duty cycle<br>0.01 fo 0.1 SAREE<br>10 20 30 40 50 60 70 80 90 100 0.2 0.3 0.4 0.5 0.6 0.7<br>PERCENT OF RATED PEAK REVERSE VOLTAGE (%)   FORWARD VOLTAGE (V)<br>      Fig.5 Maximum Non-Repetitive Forward Surge Current<br>360320280 PMFT EE| TEEETLTELT<br>240<br>PIN t = 8.3ms<br>200<br>Ne yoit | | |EEL<br>160 a<br>120 t = 10.0ms<br>80 | ee Bh. e eee ena<br>40 e e<br>0 a ee ee ee<br>1 10 100<br>NUMBER OF CYCLES<br>CAPACITANCE (pF)<br>AVERAGE FORWARD CURRENT (A)<br>INSTANTANEOUS REVERSE CURRENT (mA)  INSTANTANEOUS FORWARD CURRENT (A)<br>PEAK FORWARD SURGE CURRENT (A)<br>**----- End of picture text -----**<br>


3 Version: G2105 

s SEMICONDUCTOR[ypu **SR1202 – SR1204** Taiwan Semiconductor 

## CHARACTERISTICS CURVES 

(TA = 25°C unless otherwise noted) 

## **Fig.6 Typical Transient Thermal Characteristics** 

**==> picture [384 x 201] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>YT | TP<br>10 TT<br>a ee<br>1<br>Pee ni nn CT<br>a aee<br>0.1 PT [TUE] |ET ee ee ee<br>0.01 0.1 1 10 100<br>PULSE DURATION (s)<br>TRANSIENT THERMAL IMPEDANCE (°C/W)<br>**----- End of picture text -----**<br>


4 Version: G2105 

**SR1202 – SR1204** Taiwan Semiconductor $5 Eee} A @i @i@iaiai ii 

Taiwan Semiconductor 

## PACKAGE OUTLINE DIMENSIONS 

## **DO-201AD** 

D—| 

## MARKING DIAGRAM 

P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code 

5 Version: G2105 

**SR1202 – SR1204** TAIWANSEMICONDUCTOR(i Taiwan Semiconductor 

## Notice 

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. 

Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. 

Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. 

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 

6 Version: G2105