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SQS966ENW-T1_GE3
Dual MOSFET, N Channel, 60 V, 60 V, 6 A, 6 A, 0.028 ohm
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type:
- Transistor Polarity:Dual N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (07-Nov-2024)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: TrenchFET Series
- Qualification: AEC-Q101
- Transistor Case Style: PowerPAK 1212
- Operating Temperature Max: 175°C
- Power Dissipation N Channel: 27.8W
- Power Dissipation P Channel: 27.8W
- Drain Source Voltage Vds N Channel: 60V
- Drain Source Voltage Vds P Channel: 60V
- Continuous Drain Current Id N Channel: 6A
- Continuous Drain Current Id P Channel: 6A
- Drain Source On State Resistance N Channel: 0.028ohm
- Drain Source On State Resistance P Channel: 0.028ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.299 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
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Updated at March 30, 2026