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SQJQ906EL-T1_GE3
Dual MOSFET, N Channel, 40 V, 40 V, 160 A, 160 A, 3600 µohm
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type: Dual MOSFETs
- Transistor Polarity:Dual N Channel; Continuous Drain Current Id:160A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0036ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: TrenchFET Series
- Qualification: AEC-Q101
- Transistor Case Style: PowerPAK
- Operating Temperature Max: 175°C
- Power Dissipation N Channel: 187W
- Power Dissipation P Channel: 187W
- Drain Source Voltage Vds N Channel: 40V
- Drain Source Voltage Vds P Channel: 40V
- Continuous Drain Current Id N Channel: 160A
- Continuous Drain Current Id P Channel: 160A
- Drain Source On State Resistance N Channel: 3600µohm
- Drain Source On State Resistance P Channel: 3600µohm
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.86 € |
| Current stock | 10+ |
| Lead time | 21 days |
Datasheet
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Updated at March 22, 2026