SQJB60EP-T1_GE3

Dual MOSFET, N Channel, 60 V, 60 V, 30 A, 30 A, 0.01 ohm

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Manufacturer: VISHAY
Product type: Dual MOSFETs
Transistor Polarity:Dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage V
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 6Pins
Channel Type: N Channel
Product Range: TrenchFET Series
Qualification: AEC-Q101
Transistor Case Style: PowerPAK SO
Operating Temperature Max: 175°C
Power Dissipation N Channel: 48W
Power Dissipation P Channel: 48W
Drain Source Voltage Vds N Channel: 60V
Drain Source Voltage Vds P Channel: 60V
Continuous Drain Current Id N Channel: 30A
Continuous Drain Current Id P Channel: 30A
Drain Source On State Resistance N Channel: 0.01ohm
Drain Source On State Resistance P Channel: 0.01ohm

Delivery and price
Units per pack	1500
Price	0.731 €
Current stock	10+
Lead time	21 days

Datasheet

Updated at March 22, 2026