SQJ912BEP-T1_GE3

Dual MOSFET, N Channel, 40 V, 40 V, 30 A, 30 A, 9000 µohm

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Manufacturer: VISHAY
Product type: Dual MOSFETs
Transistor Polarity:Dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.009ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vg
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 8Pins
Channel Type: N Channel
Product Range: TrenchFET Series
Qualification: AEC-Q101
Transistor Case Style: PowerPAK SO
Operating Temperature Max: 175°C
Power Dissipation N Channel: 48W
Power Dissipation P Channel: 48W
Drain Source Voltage Vds N Channel: 40V
Drain Source Voltage Vds P Channel: 40V
Continuous Drain Current Id N Channel: 30A
Continuous Drain Current Id P Channel: 30A
Drain Source On State Resistance N Channel: 9000µohm
Drain Source On State Resistance P Channel: 9000µohm

Delivery and price
Units per pack	1500
Price	0.469 €
Current stock	1000+
Lead time	7 days

Datasheet

Updated at March 22, 2026