SQJ868EP-T1_GE3

Power MOSFET, N Channel, 40 V, 58 A, 7350 µohm, PowerPAK SO, Surface Mount

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Manufacturer: VISHAY
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:58A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0062ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 8Pins
Channel Type: N Channel
Product Range: TrenchFET
Qualification: AEC-Q101
Power Dissipation: 48W
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Transistor Case Style: PowerPAK SO
Drain Source Voltage Vds: 40V
Operating Temperature Max: 175°C
Continuous Drain Current Id: 58A
Drain Source On State Resistance: 7350µohm
Gate Source Threshold Voltage Max: 3V

Delivery and price
Units per pack	1000
Price	0.35 €
Current stock	1000+
Lead time	7 days

Datasheet

Updated at March 27, 2026